Abstract: Organic photovoltaic cells (OPVs) and their compositions are described herein. In one or more embodiments, the acceptor with an active layer of an OPV includes is a non-fullerene acceptor. Such non-fullerene acceptors may provide improved OPV performance characteristics such as improved power conversion efficiency, open circuit voltage, fill factor, short circuit current, and/or external quantum efficiency. One example of a non-fullerene acceptor is (4,4,10,10-tetrakis(4-hexylphenyl)-5,11-(2-ethylhexyloxy)-4,10-dihydro-dithienyl[1,2-b:4,5b?] benzodi-thiophene-2,8-diyl) bis(2-(3-oxo-2,3-dihydroinden-5,6-dichloro-1-ylidene) malononitrile.

Abstract: There is disclosed squaraine compounds of formula I: wherein each of Y1 and Y2 is independently chosen from an optionally substituted amino group and an optionally substituted aryl group. Also described are organic optoelectronic devices comprising a Donor-Acceptor heterojunction that is formed from one or more of the squaraine compounds. A method of making the disclosed device, which may include one or more sublimation step for depositing said squaraine compound, is also disclosed.

Abstract: An organic vapor deposition device comprises a print head, comprising a source channel, in fluid communication with a flow of carrier gas and a quantity of organic source material configured to mix with the carrier gas, a nozzle having a deposition outlet, in fluid communication with the source channel, and a shutter configured at least to open and close the deposition outlet, wherein the print heat is configured to allow the flow of carrier gas and the organic source material exit the deposition outlet when the shutter is in an open position, and to prevent the flow of carrier gas and the organic source material from exiting the deposition outlet when the shutter is in a closed position. A method of manufacturing a device comprising an organic feature on a substrate is also described.

Abstract: An organic photovoltaic cell comprises a first electrode, a second electrode, an active layer comprising at least one donor material and at least one acceptor material, positioned between the first electrode and the second electrode, an outcoupling layer positioned on a surface of the first electrode such that the first electrode is positioned between the outcoupling layer and the active layer, and an anti-reflective coating positioned over a surface of the second electrode such that the second electrode is positioned between the anti-reflective coating and the active layer, wherein the organic photovoltaic cell is at least semi-transparent to at least one wavelength range. A method of fabricating an organic device is also described.

Abstract: A method of fabricating a photovoltaic cell having a microinverter is provided. The method may include fabricating a monolithic microinverter layer through epitaxy and operably connecting the at least one microinverter layer to at least one photovoltaic cell formed on a photovoltaic layer. A photovoltaic device is also provided. The device may have a photovoltaic layer comprising at least one photovoltaic cell and a microinverter layer comprising at least one microinverter, wherein the microinverter layer was fabricated through epitaxy, the at least one microinverter is configured to be operably connected to at least one photovoltaic cell.

Abstract: An organic light emitting device (OLED) is provided that includes a cathode and an anode; a blue emitting layer; and at least two hybrid red/green emitting layers. One of the at least two hybrid red/green emitting layers is a cathode side, red/green emitting layer that is disposed between the cathode and the blue emitting layer. The second of the at least two hybrid red/green emitting layers is an anode side, red/green emitting layer that is disposed between the blue emitting layer and the anode. The OLED emits white light.

Abstract: A top-emitting organic light emitting device (OLED) that comprises: a substrate having an inward side and an outward side; an OLED body that includes a transparent bottom electrode proximate to the inward side of the substrate, an organic emitting layer, and a transparent top electrode in that order; a non-metallic, diffuse reflective layer with a roughened top surface proximate to and facing the bottom transparent electrode; and a high refractive index waveguide layer. The diffuse reflective layer is positioned between the inward side of the substrate and the OLED body, and the waveguide layer is positioned between the diffuse layer and the bottom transparent electrode.

Abstract: The present disclosure relates to organic photosensitive optoelectronic devices grown in an inverted manner. An inverted organic photosensitive optoelectronic device of the present disclosure comprises a reflective electrode, an organic donor-acceptor heterojunction over the reflective electrode, and a transparent electrode on top of the donor-acceptor heterojunction.

Abstract: Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

Abstract: An OLED device comprises an anode and a cathode, and at least one graded emissive layer disposed between the anode and the cathode, the graded emissive layer comprising first and second materials, wherein a concentration of the first material increases continuously from an anode side of the graded emissive layer to a cathode side of the graded emissive layer, and a concentration of the second material decreases continuously from the anode side of the graded emissive layer to the cathode side of the graded emissive layer. An OLED device comprising a graded emissive layer and a hybrid white OLED device are also described.

Abstract: A method of fabricating a light emitting device comprises providing a mold having an unpolished surface with an arithmetic mean roughness Ra in a range from 0.1 ?m to 10 ?m, depositing a thin polymer film over the surface of the mold, wherein the film has a thickness in a range from 1 ?m to 100 ?m, positioning a light emitting body onto the thin polymer film, wherein the light emitting body includes an anode, a cathode, and a light emitting layer positioned between the anode and the cathode, and separating the thin polymer film with the light emitting body from the mold. A light emitting device is also described.

Abstract: The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.

Abstract: A first device is provided. The device includes a print head. The print head further includes a first nozzle hermetically sealed to a first source of gas. The first nozzle has an aperture having a smallest dimension of 0.5 to 500 microns in a direction perpendicular to a flow direction of the first nozzle. At a distance from the aperture into the first nozzle that is 5 times the smallest dimension of the aperture of the first nozzle, the smallest dimension perpendicular to the flow direction is at least twice the smallest dimension of the aperture of the first nozzle.

Abstract: There is disclosed Kirigami-inspired structures for use in solar tracking applications. When coupled with thin-film active materials, the disclosed microstructures can track solar position and maximize solar power generation. In one embodiment, there is disclosed a photovoltaic system comprising a single-axis, or multi-axis solar tracking structure comprising a support structure made of a flexible material having a defined unit cell structure, and a flexible photovoltaic cell disposed on the support structure. There is also disclosed methods of making such structures in which the photovoltaic cell is mounted to the support structure by a direct-attachment bonding processes such as cold-welding.

Abstract: Organic light emitting devices are described wherein the emissive layer comprises a host material containing an emissive molecule, which molecule is adapted to luminesce when a voltage is applied across the heterostructure, and the emissive molecule is selected from the group of phosphorescent organometallic complexes, including cyclometallated platinum, iridium and osmium complexes. The organic light emitting devices optionally contain an exciton blocking layer. Furthermore, improved electroluminescent efficiency in organic light emitting devices is obtained with an emitter layer comprising organometallic complexes of transition metals of formula L2MX, wherein L and X are distinct bidentate ligands. Compounds of this formula can be synthesized more facilely than in previous approaches and synthetic options allow insertion of fluorescent molecules into a phosphorescent complex, ligands to fine tune the color of emission, and ligands to trap carriers.

Abstract: A method is presented for fabricating a substrate comprised of a compound semiconductor. The method includes: growing a sacrificial layer onto a parent substrate; growing an epitaxial template layer on the sacrificial layer; removing the template layer from the parent substrate using an epitaxial lift-off procedure; and bonding the removed template layer to a host substrate using Van der Waals forces and thereby forming a compound semiconductor substrate.

Abstract: Arrangements and techniques for providing organic emissive layers are provided, in which the emissive layer includes a first dopant having a dissociative energy level. A second dopant in the emissive layer provides a solid state sink energy level, to which doubly excited excitons and/or polarons may transition instead of to the dissociative energy level, thereby decreasing the undesirable effects of transitions to the dissociative energy level.

Abstract: Thin-film electronic devices such as LED devices and field effect transistor devices are fabricated using a non-destructive epitaxial lift-off technique that allows indefinite reuse of a growth substrate. The method includes providing an epitaxial protective layer on the growth substrate and a sacrificial release layer between the protective layer and an active device layer. After the device layer is released from the growth substrate, the protective layer is selectively etched to provide a newly exposed surface suitable for epitaxial growth of another device layer. The entire thickness of the growth substrate is preserved, enabling continued reuse. Inorganic thin-film device layers can be transferred to a flexible secondary substrate, enabling formation of curved inorganic optoelectronic devices.

Abstract: A number of new solutions for enhancing the extraction of waveguided mode and suppressing surface plasmon polariton mode in OLEDs are disclosed.

Abstract: Thermophotovoltaic (TPV) systems and devices with improved efficiencies are disclosed herein. In one example, a thermophotovoltaic (TPV) cell includes an active layer; a back-surface reflective (BSR) layer; and a spacer layer positioned between the active layer and back-surface reflective layer.