Abstract: A computer-implemented method for using a machine-learning trained predictive engine to predict failures includes receiving electronic prior transaction data corresponding to a plurality of prior successful transactions and a plurality of prior unsuccessful transactions, and training a machine learning predictive engine based on the plurality of prior successful transactions and the plurality of prior unsuccessful transactions. Electronic transaction data may be received, the electronic transaction data being associated with a user, an item, and candidate transaction terms, the electronic transaction data being associated with a candidate transaction. The machine learning predictive engine may determine a likelihood of success of the candidate transaction based on the electronic transaction data, and display the likelihood of success of the candidate transaction.

Abstract: Systems and methods for providing a disposal recommendation for an owned vehicle are provided. The method includes generating a profile for the owned vehicle, the profile including age, mileage, and location of the owned vehicle, receiving monitoring data of the owned vehicle, and receiving sales data for non-owned vehicles corresponding to the profile. The method may further include generating predicted depreciation data of the owned vehicle, based on the sales data and the monitoring data, and providing a recommended disposal time for the owned vehicle, based on the predicted depreciation data.

Abstract: A system may have a support structure that separates an exterior region from an interior region. The system may include a lighting system with interior and/or exterior lights with adjustable diffusers. An interior light may be used as a task light, a cabin light, a sensor indicator light, or a trim light. Adjustments to the adjustable diffusers can be used to adjust the angular spread of emitted light for operation in different lighting modes.

Abstract: Antibodies, and antigen-binding fragments thereof, that specifically bind to bone morphogenetic protein-9 (BMP9) are provided. Embodiments include uses, and associated methods of using the antibodies, and antigen-binding fragments thereof.

Abstract: A method for producing a neutrons includes triggering a raising or a lowering of a temperature of a pyroelectric crystal of less than about 40° C. to produce a voltage of negative polarity of at least ?100 keV on a surface of a deuterated or tritiated target coupled thereto. A deuterium ion source is pulsed to produce a deuterium ion beam. The accelerating of the deuterium ion beam is achieved by accelerating voltage of the pyroelectric crystal toward the deuterated or tritiated target to produce neutrons. Furthermore, the pyroelectric crystal, the deuterated or tritiated target, and the deuterium ion source are coupled to a common support. The method also includes throwing the common support housing the pyroelectric crystal, the deuterated or tritiated target, and the deuterium ion source near an unknown threat for identification thereof.

Abstract: One embodiment of a method for controlling a robot includes generating a representation of spatial occupancy within an environment based on a plurality of red, green, blue (RGB) images of the environment, determining one or more actions for the robot based on the representation of spatial occupancy and a goal, and causing the robot to perform at least a portion of a movement based on the one or more actions.

Abstract: Systems and methods for preventing machine learning models from negatively affecting mobile devices are provided. For example, a mobile device including a camera, memory devices, and one or more processors are provided. In some embodiments, the processors may be configured to provide images captured by the camera to a machine learning model at a first rate. The processors may also be configured to determine whether one or more of the images includes an object. If one or more of the images includes the object, the processors may be further configured to adjust the first rate of providing the images to the machine learning model to a second rate, and in some embodiments, determine whether to adjust the second rate of providing the images to the machine learning model to a third rate based on output received from the machine learning model.

Abstract: A device having extended reality capabilities receives a video feed including one or more video frames depicting an object. The device provides the one or more video frames to a first machine learning model that identifies the object and one or more parts of the object that are depicted in the one or more video frames, and obtains positional tracking information that represents a position and an orientation associated with the object depicted in the one or more video frames relative to a coordinate space. The device identifies a plurality of parts from the one or more parts of the object that are depicted in the one or more video frames and determines, using one or more second machine learning models, information regarding the plurality of parts and information regarding one or more replacement parts.

Abstract: Various embodiments are generally directed to techniques to provide specific vehicle recommendations to generic user requests. A method for providing the specific vehicle recommendation includes: receiving a generic automobile request from a user, applying a machine learning model (MLM) trained by a corpus of reviews to the received request, and generating, by the MLM, a recommendation for at least one specific automobile feature based on the generic automobile request.

Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.

Abstract: Disclosed herein is a memory cell. The memory cell may act both as a combined selector device and memory element. The memory cell may be programmed by applying write pulses having different polarities. Different polarities of the write pulses may program different logic states into the memory cell. The memory cell may be read by read pulses all having the same polarity. The logic state of the memory cell may be detected by observing different threshold voltages when the read pulses are applied. The different threshold voltages may be responsive to the different polarities of the write pulses.