Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: A food dispensing system comprises an outer structure and a force-providing mechanism. The outer structure is adapted to enclose at least a portion of a pouch system that contains a food product, the pouch system having a squeezable element that holds the food product and a spout element for dispensing the food product. The outer structure is further adapted to allow a user to access the spout element of the pouch system, and to prevent the user from squeezing the squeezable element. The force-providing mechanism is adapted to exert a force on the squeezable element.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Abstract: Embodiments disclosed herein may relate to electrically conductive vias in cross-point memory array devices. In an embodiment, the vias may be formed using a lithographic operation also utilized to form electrically conductive lines in a first electrode layer of the cross-point memory array device.

Abstract: Example subject matter disclosed herein relates to apparatuses and/or devices, and/or various methods for use therein, in which an application of an electric potential to a circuit may be initiated and subsequently changed in response to a determination that a snapback event has occurred in a circuit. For example, a circuit may comprise a memory cell that may experience a snapback event as a result of an applied electric potential. In certain example implementations, a sense circuit may be provided which is responsive to a snapback event occurring in a memory cell to generate a feed back signal to initiate a change in an electric potential applied to the memory cell.

Abstract: A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.

Abstract: Embodiments disclosed herein may relate to controlling a discharge of a capacitive element coupled to a phase change memory cell to produce a specified state in the phase change memory cell.

Abstract: Embodiments disclosed herein may relate to controlling a discharge of a capacitive element coupled to a phase change memory cell to produce a specified state in the phase change memory cell.

Abstract: A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments.

Abstract: An apparatus and a method for refreshing or toggling a phase-change memory cell are described. The apparatus includes a voltage ramp element coupled to the phase-change memory cell and provided for controlling voltage across the phase-change memory cell. A current control element is coupled to the phase-change memory cell and provided for controlling current through the phase-change memory cell. A current sensor element is coupled to the phase-change memory cell. A write-back timer and control element is coupled to the current sensor element and to the current control element.

Abstract: A phase change memory using an ovonic threshold switch selection device may be programmed from one state to another by first turning on the ovonic threshold switch. After the voltage across the cell has fallen, the cell may then be biased to program the cell to the desired state.

Abstract: Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell.

Abstract: Using the voltage across a threshold switching cell to sense the state of the cell, rather than sensing current through the cell, may result in a faster read. In some embodiments, current consumption during reading of conductive states may be reduced by using a capacitor coupled across the cell.

Abstract: A memory cell exhibiting threshold switch behavior, such as a phase change memory, can be programmed in a way that eliminates the need for a separate post-programming verification cycle. In particular, a circuit can be used to apply the programming pulse to a cell in a way that determines whether the cell has reached the desired threshold voltage. If the cell has not reached the desired threshold voltage, it receives another programming pulse. If it has, it does not receive another programming pulse. Thus, by applying a voltage across the cell that never exceeds the threshold voltage of the cell, the need for a separate verification cycle can be eliminated in some embodiments.

Abstract: A system may include acquisition of a supply voltage information representing past supply voltages supplied to an electrical component, acquisition of a temperature information representing past temperatures of the electrical component, and control of a performance characteristic of the electrical component based on the supply voltage information and the temperature information. Some embodiments may further include determination of a reliability margin based on the supply voltage information, the temperature information, and on a reliability specification of the electrical component, and change of the performance characteristic based on the reliability margin.

Abstract: According to embodiments of the present invention, a one-time programmable (OTP) cell includes an access transistor coupled to an antifuse transistor. In on embodiment, access transistor has a gate oxide thickness that is greater than the gate oxide thickness of the antifuse transistor so that if the antifuse transistor is programmed, the voltage felt across the gate/drain junction of the access transistor is insufficient to cause the gate oxide of the access transistor to break down. The dual gate oxide OTP cell may be used in an array in which only one OTP cell is programmed at a time. The dual gate oxide OTP cell also may be used in an array in which several OTP cells are programmed simultaneously.