Abstract: The invention provides a cyclin dependent kinase (e.g. cdk-4 kinase) inhibitor of the formula (I) or a salt, tautomer, solvate or N-oxide thereof; wherein R1 is an optionally substituted monocyclic or bicyclic aryl or heteroaryl group containing 0-2 heteroatoms selected from O, N and S wherein the optional substituents are selected from halogen, C1-4 alkyl, C1-4 alkoxy, C3-4 cycloalkyl and cyano, and wherein the C1-4 alkyl and C1-4 alkoxy groups are each optionally further substituted by C1-2 alkoxy or one or more halogen atoms; and E is a group E1, E2, E3 or E4: formulae E1, E2, E3, E4 wherein n, q, A5 B, T, U, V, W, Z, R2, R5, R6 and R7 are as defined in the claims.

Abstract: A semiconductor structure. The semiconductor structure includes a semiconductor substrate, a first transistor on the semiconductor substrate, and a guard ring on the semiconductor substrate. The semiconductor substrate includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface. The guard ring includes a semiconductor material doped with a doping polarity. A first doping profile of a first doped transistor region of the first transistor in the reference direction and a second doping profile of a first doped guard-ring region of the guard ring in the reference direction are essentially a same doping profile. The guard ring forms a closed loop around the first transistor.

Abstract: A semiconductor structure and a method for forming the same. The method includes providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate. The method further includes simultaneously forming a first doped transistor region of a first transistor and a first doped guard-ring region of a guard ring on the semiconductor substrate. The first doped transistor region and the first doped guard-ring region comprise dopants of a first doping polarity. The method further includes simultaneously forming a second doped transistor region of the first transistor and a second doped guard-ring region of the guard ring on the semiconductor substrate. The second doped transistor region and the second doped guard-ring region comprise dopants of the first doping polarity. The second doped guard-ring region is in direct physical contact with the first doped guard-ring region. The guard ring forms a closed loop around the first and second doped transistor regions.

Abstract: An electrical structure and method of forming. The electrical structure includes a semiconductor substrate comprising a deep trench, an oxide liner layer is formed over an exterior surface of the deep trench, and a field effect transistor (FET) formed within the semiconductor substrate. The first FET includes a source structure, a drain structure, and a gate structure. The gate structure includes a gate contact connected to a polysilicon fill structure. The polysilicon fill structure is formed over the oxide liner layer and within the deep trench. The polysilicon fill structure is configured to flow current laterally across the polysilicon fill structure such that the current will flow parallel to a top surface of the semiconductor substrate.

Abstract: A semiconductor structure and a method forming the same. The method includes providing a semiconductor structure which includes a semiconductor substrate. The semiconductor substrate includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface. The method further includes simultaneously forming a first doped transistor region of a first transistor and a first doped Source/Drain portion of a second transistor on the semiconductor substrate. The first doped transistor region is not a portion of a Source/Drain region of the first transistor. The first doped transistor region and the first doped Source/Drain portion comprise dopants of a first doping polarity. The method further includes forming a second gate dielectric layer and a second gate electrode region of the second transistor on the semiconductor substrate. The second gate dielectric layer is sandwiched between and electrically insulates the second gate electrode region and the semiconductor substrate.

Abstract: A semiconductor structure and a method for forming the same. The method includes providing a semiconductor structure. The semiconductor structure includes a semiconductor substrate. The method further includes simultaneously forming a first doped transistor region of a first transistor and a first doped guard-ring region of a guard ring on the semiconductor substrate. The first doped transistor region and the first doped guard-ring region comprise dopants of a first doping polarity. The method further includes simultaneously forming a second doped transistor region of the first transistor and a second doped guard-ring region of the guard ring on the semiconductor substrate. The second doped transistor region and the second doped guard-ring region comprise dopants of the first doping polarity. The second doped guard-ring region is in direct physical contact with the first doped guard-ring region. The guard ring forms a closed loop around the first and second doped transistor regions.

Abstract: A semiconductor structure and a method for operating the same. The method includes providing a semiconductor structure. The semiconductor structure includes first, second, third, and fourth doped semiconductor regions. The second doped semiconductor region is in direct physical contact with the first and third doped semiconductor regions. The fourth doped semiconductor region is in direct physical contact with the third doped semiconductor region. The first and second doped semiconductor regions are doped with a first doping polarity. The third and fourth doped semiconductor regions are doped with a second doping polarity. The method further includes (i) electrically coupling the first and fourth doped semiconductor regions to a first node and a second node of the semiconductor structure, respectively, and (ii) electrically charging the first and second nodes to first and second electric potentials, respectively. The first electric potential is different from the second electric potential.

Abstract: This invention relates to substituted dihydrotriazinones, triazinones and related compounds, compositions comprising such compounds and an agronomically acceptable carrier, and the use thereof as broad spectrum fungicides. This invention also teaches methods of preparing these compounds as well as methods of using the compounds as fungicides.

Abstract: Diodes and method of fabricating diodes. A diode includes: an p-type single wall carbon nanotube; an n-type single wall carbon nanotube, the p-type single wall carbon nanotube in physical and electrical contact with the n-type single wall carbon nanotube; and a first metal pad in physical and electrical contact with the p-type single wall carbon nanotube and a second metal pad in physical and electrical contact with the n-type single wall carbon nanotube.

Abstract: A structure for dissipating charge during fabrication of an integrated circuit. The structure includes: a substrate contact in a semiconductor substrate; one or more wiring levels over the substrate; one or more electrically conductive charge dissipation structures extending from a top surface of an uppermost wiring level of the one or more wiring levels through each lower wiring level of the one or more wiring levels to and in electrical contact with the substrate contact; and circuit structures in the substrate and in the one or more wiring layers, the charge dissipation structures not electrically contacting any the circuit structures in any of the one or more wiring levels, the one or more charge dissipation structures dispersed between the circuit structures.

Abstract: A structure and method of fabricating the structure. The structure including: a dielectric isolation in a semiconductor substrate, the dielectric isolation extending in a direction perpendicular to a top surface of the substrate into the substrate a first distance, the dielectric isolation surrounding a first region and a second region of the substrate, a top surface of the dielectric isolation coplanar with the top surface of the substrate; a dielectric region in the second region of the substrate; the dielectric region extending in the perpendicular direction into the substrate a second distance, the first distance greater than the second distance; and a first device in the first region and a second device in the second region, the first device different from the second device, the dielectric region isolating a first element of the second device from a second element of the second device.

Abstract: Invention for transmitting energy in an effective manner for applications comprising cold nuclear fusion, radiosurgery, radiotherapy, non-invasive ophthalmic surgery, imaging, power transmission, communications, energy storage, momentum-based power generation, and data storage and retrieval comprising: Step 1) providing apparatus for producing a beam of electromagnetically neutralized energy comprising electromagnetic wave-particle behaving entities comprising waves which destructively interfere to an extent, and associated electromagnetic fields which cancel to a respective extent; and, Step 2) coherent transmission of the beam of electromagnetically neutralized energy by coherent transmission apparatus to a target.

Abstract: A solid-state composition having the general formula CuxAnLyZ, where: A is CO or an olefin and n=0 or n>0; L is an electrically neutral ligand and O<y<0; and Z is an anion bearing a charge x-. The solid-state composition can advantageously adsorb CO or an olefin in the presence of water.

Abstract: The invention provides a compound of the formula (I): or a salt, solvate, tautomer or N-oxide thereof, wherein M is selected from a group D1 and a group D2: and R?, E, A and X are as defined in the claims. Also provided are pharmaceutical compositions containing the compounds, processes for making the compounds and the use of the compounds in the prophylaxis or treatment of a disease state mediated by a CDK kinase, GSK-3 kinase or Aurora kinase.

Abstract: For data transmission with spatial spreading, a transmitting entity (1) encodes and modulates each data packet to obtain a corresponding data symbol block, (2) multiplexes data symbol blocks onto NS data symbol streams for transmission on NS transmission channels of a MIMO channel, (3) spatially spreads the NS data symbol streams with steering matrices, and (4) spatially processes NS spread symbol streams for full-CSI transmission on NS eigenmodes or partial-CSI transmission on NS spatial channels of the MIMO channel. A receiving entity (1) obtains NR received symbol streams via NR receive antennas, (2) performs receiver spatial processing for full-CSI or partial-CSI transmission to obtain NS detected symbol streams, (3) spatially despreads the NS detected symbol streams with the same steering matrices used by the transmitting entity to obtain NS recovered symbol streams, and (4) demodulates and decodes each recovered symbol block to obtain a corresponding decoded data packet.

Abstract: A method and apparatus for managing a network includes detecting occurrence of a network event associated with a new network condition including unplanned and planned macro-events associated with network elements and communication links of the network. The network event is classified as being associated with at least one of a network element failure, communications link failure, and a security breach. In response to the network event exceeding a network degradation threshold, the network event is identified as a network degradation event, and an alert is sent to a network administrator to normalize the network degradation event.

Abstract: A user terminal supports multiple spatial multiplexing (SM) modes such as a steered mode and a non-steered mode. For data transmission, multiple data streams are coded and modulated in accordance with their selected rates to obtain multiple data symbol streams. These streams are then spatially processed in accordance with a selected SM mode (e.g., with a matrix of steering vectors for the steered mode and with the identity matrix for the non-steered mode) to obtain multiple transmit symbol streams for transmission from multiple antennas. For data reception, multiple received symbol streams are spatially processed in accordance with the selected SM mode (e.g., with a matrix of eigenvectors for the steered mode and with a spatial filter matrix for the non-steered mode) to obtain multiple recovered data symbol streams. These streams are demodulated and decoded in accordance with their selected rates to obtain multiple decoded data streams.

Abstract: Methods and arrangements to analyze web traffic of a portal are contemplated. Embodiments include transformations, code, state machines or other logic to analyze web traffic of a portal by a portlet receiving a request for web page content from the portal and generating a fragment of a web page. The fragment may include code to collect data from clients on web traffic of the portlet and to transmit the data to a facility for the collection of data on web traffic of the portal and the portlet. Some embodiments may involve a portal requesting web page content from a portlet, and the portal receiving a fragment of a web page from the portlet. The fragment may include code to collect data from clients on web traffic of the portlet and to transmit the data to the data collection facility.

Abstract: Techniques for performing phase correction for wireless communication are described. Received pilot symbols and received data symbols may be obtained from an orthogonal frequency division multiplexing (OFDM) and/or multiple-input multiple-output (MIMO) transmission. First phase information is obtained based upon the received pilot symbols. Second phase information is obtained based upon the received data symbols. The phase of the received data symbols is corrected based upon the first and second phase information (directly and/or indirectly). For example, the phase of the received data symbols may be corrected based upon the first phase information, detection may be performed on the phase corrected data symbols to obtain estimated data symbols, the second phase information may be obtained based upon the estimated data symbols, and the phase of the estimated data symbols may be corrected based upon the second phase information. The phase correction may also be performed in other manners.

Abstract: Techniques for quickly sending feedback information for beamforming are described. A transmitter/initiator sends a first frame comprising training symbols. A receiver/responder receives the first frame, determines the amount of time to generate feedback information, and determines the amount of time to send the feedback information. The receiver then determines the length of a second frame carrying the feedback information based on the amounts of time to generate and send the feedback information. The receiver sends the second frame after waiting a short interframe space (SIFS) period from the end of the first frame, without performing channel access. The receiver generates the feedback information based on the training symbols and sends the information in the second frame when ready. The transmitter receives the second frame, derives at least one steering matrix based on the feedback information, and sends a third frame with the at least one steering matrix.