Patents by Inventor Steven Howard

Steven Howard has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20120148682
    Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: June 14, 2012
    Applicant: DOW AGROSCIENCES LLC
    Inventors: David H. Young, Steven Howard Shaber, Gerald Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Publication number: 20120141597
    Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: June 7, 2012
    Applicant: Dow Agrosciences LLC
    Inventors: David H. Young, Steven Howard Shaber, Gerald Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Patent number: 8193563
    Abstract: A structure and method of fabricating the structure. The structure including: a dielectric isolation in a semiconductor substrate, the dielectric isolation extending in a direction perpendicular to a top surface of the substrate into the substrate a first distance, the dielectric isolation surrounding a first region and a second region of the substrate, a top surface of the dielectric isolation coplanar with the top surface of the substrate; a dielectric region in the second region of the substrate; the dielectric region extending in the perpendicular direction into the substrate a second distance, the first distance greater than the second distance; and a first device in the first region and a second device in the second region, the first device different from the second device, the dielectric region isolating a first element of the second device from a second element of the second device.
    Type: Grant
    Filed: April 28, 2010
    Date of Patent: June 5, 2012
    Assignee: International Business Machines Corporation
    Inventors: Jeffrey Peter Gambino, Steven Howard Voldman, Michael Joseph Zierak
  • Patent number: 8178925
    Abstract: A semiconductor structure operation method. The method includes providing a semiconductor structure. The semiconductor structure includes first, second, third, and fourth doped semiconductor regions. The second doped semiconductor region is in direct physical contact with the first and third doped semiconductor regions. The fourth doped semiconductor region is in direct physical contact with the third doped semiconductor region. The first and second doped semiconductor regions are doped with a first doping polarity. The third and fourth doped semiconductor regions are doped with a second doping polarity. The method further includes (i) electrically coupling the first and fourth doped semiconductor regions to a first node and a second node of the semiconductor structure, respectively, and (ii) electrically charging the first and second nodes to first and second electric potentials, respectively. The first electric potential is different from the second electric potential.
    Type: Grant
    Filed: April 23, 2010
    Date of Patent: May 15, 2012
    Assignee: International Business Machines Corporation
    Inventor: Steven Howard Voldman
  • Publication number: 20120107416
    Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: May 3, 2012
    Applicant: DOW AGROSCIENCES LLC
    Inventors: David H. Young, Steven Howard Shaber, Gerald Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Publication number: 20120101064
    Abstract: The invention provides compounds of the formula (I): and salts, tautomers, solvates and N-oxides thereof; wherein Q is CH or N; X is N, N+—O? or CR3; Y is N, N+—O? or CR3a; R1 and R2 are independently selected from hydrogen and various substituents as defined in the claims; or R1 and R2 together with the atoms to which they are attached, link to form an optionally substituted carbocyclic or heterocyclic aromatic or non-aromatic ring of 4 to 7 members; R3 is selected from hydrogen and various substituents; and R3a is selected from hydrogen and various substituents as defined in the claims. Also provided are pharmaceutical compositions containing the compounds of formula (I), processes for making the compounds and the medical uses of the compounds. The compounds of formula (I) have activity as inhibitors of CDK kinases and are useful in the treatment of inter alia proliferative diseases such as cancers.
    Type: Application
    Filed: April 30, 2010
    Publication date: April 26, 2012
    Applicants: Astex Therapeutics Limited, Novartis AG
    Inventors: Steven Howard, Paul Neil Mortenson, Steven Douglas Hiscock, Alison Jo-Anne Woolford, Andrew James Woodhead, Gianni Chessari, Marc O'reilly, Miles Stuart Congreve, Claudio Dagostin, Young Shin Cho, Fan Yang, Christine Hiu-Tung Chen, Christopher Thomas Brain, Bharat Lagu, Yaping Wang, Sunkyu Kim, John Grialdes, Michael Joseph Luzzio, Lawrence Blas Perez
  • Patent number: 8143671
    Abstract: A semiconductor structure and associated method of formation. The semiconductor structure includes a semiconductor substrate, a first doped transistor region of a first transistor and a first doped Source/Drain portion of a second transistor on the semiconductor substrate, a second gate dielectric layer and a second gate electrode region of the second transistor on the semiconductor substrate, a first gate dielectric layer and a first gate electrode region of the first transistor on the semiconductor substrate, and a second doped transistor region of the first transistor and a second doped Source/Drain portion of the second transistor on the semiconductor substrate. The first and second gate dielectric layers are sandwiched between and electrically insulate the semiconductor substrate from the first and second gate electrode regions, respectively. The first and second gate electrode regions are totally above and totally below, respectively, the top substrate surface.
    Type: Grant
    Filed: December 17, 2009
    Date of Patent: March 27, 2012
    Assignee: International Business Machines Corporation
    Inventor: Steven Howard Voldman
  • Publication number: 20120045521
    Abstract: The present invention relates to the use of mixtures containing 2-hydroxyphenylaldehyde and 2-hydroxyphenylketone heterocycloylhydrazone compounds and copper for controlling the growth of fungi and algae.
    Type: Application
    Filed: August 18, 2011
    Publication date: February 23, 2012
    Applicant: DOW AGROSCIENCES LLC
    Inventors: Steven Howard Shaber, Jeffery D. Webster, David H. Young, Gerald Shaber
  • Publication number: 20120044732
    Abstract: An isolated epitaxial modulation device comprises a substrate; a barrier structure formed on the substrate; an isolated epitaxial region formed above the substrate and electrically isolated from the substrate by the barrier structure; a semiconductor device, the semiconductor device located in the isolated epitaxial region; and a modulation network formed on the substrate and electrically coupled to the semiconductor device. The device also comprises a bond pad and a ground pad. The isolated epitaxial region is electrically coupled to at least one of the bond pad and the ground pad. The semiconductor device and the epitaxial modulation network are configured to modulate an input voltage.
    Type: Application
    Filed: March 17, 2011
    Publication date: February 23, 2012
    Applicant: INTERSIL AMERICAS INC.
    Inventors: Yu Li, Steven Howard Voldman
  • Patent number: 8110853
    Abstract: A semiconductor structure. The semiconductor structure includes a semiconductor substrate, a first transistor on the semiconductor substrate, and a guard ring on the semiconductor substrate. The semiconductor substrate includes a top substrate surface which defines a reference direction perpendicular to the top substrate surface. The guard ring includes a semiconductor material doped with a doping polarity. A first doping profile of a first doped transistor region of the first transistor in the reference direction and a second doping profile of a first doped guard-ring region of the guard ring in the reference direction are essentially a same doping profile. The guard ring forms a closed loop around the first transistor.
    Type: Grant
    Filed: June 1, 2009
    Date of Patent: February 7, 2012
    Assignee: International Business Machines Corporation
    Inventor: Steven Howard Voldman
  • Patent number: 8110573
    Abstract: The invention provides a compound of the formula (I): or a salt, solvate, tautomer or N-oxide thereof, wherein M is selected from a group D1 and a group D2: and R?, E, A and X are as defined in the claims. Also provided are pharmaceutical compositions containing the compounds, processes for making the compounds and the use of the compounds in the prophylaxis or treatment of a disease state mediated by a CDK kinase, GSK-3 kinase or Aurora kinase.
    Type: Grant
    Filed: December 30, 2005
    Date of Patent: February 7, 2012
    Assignee: Astex Therapeutics Limited
    Inventors: Valerio Berdini, Maria Grazia Carr, Adrian Liam Gill, Steven Howard, Eva Figueroa Navarro, Gary Trewartha, David Charles Rees, Mladen Vinkovic, Paul Graham Wyatt
  • Patent number: 8110875
    Abstract: A structure for dissipating charge during fabrication of an integrated circuit. The structure includes: a substrate contact in a semiconductor substrate; one or more wiring levels over the substrate; one or more electrically conductive charge dissipation structures extending from a top surface of an uppermost wiring level of the one or more wiring levels through each lower wiring level of the one or more wiring levels to and in electrical contact with the substrate contact; and circuit structures in the substrate and in the one or more wiring layers, the charge dissipation structures not electrically contacting any the circuit structures in any of the one or more wiring levels, the one or more charge dissipation structures dispersed between the circuit structures.
    Type: Grant
    Filed: July 2, 2008
    Date of Patent: February 7, 2012
    Assignee: International Business Machines Corporation
    Inventors: John Joseph Ellis-Monaghan, Jeffrey Peter Gambino, Timothy Dooling Sullivan, Steven Howard Voldman
  • Publication number: 20120021066
    Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: January 26, 2012
    Applicant: Dow Agrosciences LLC
    Inventors: David H. Young, Steven Howard Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Publication number: 20120021065
    Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: January 26, 2012
    Applicant: Dow Agrosciences LLC
    Inventors: David H. Young, Steven Howard Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Publication number: 20120010075
    Abstract: The present invention relates to the use of mixtures containing hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: January 12, 2012
    Applicant: Dow Agrosciences LLC
    Inventors: David H. Young, Steven Howard Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Publication number: 20120009274
    Abstract: The present invention relates to the use of hydrazone compounds and copper for controlling the growth of fungi.
    Type: Application
    Filed: January 14, 2010
    Publication date: January 12, 2012
    Applicant: Dow Agrosciences LLC
    Inventors: David H. Young, Steven Howard Shaber, Cruz Avila-Adame, Nneka T. Breaux, James M. Ruiz, Thomas L. Siddall, Jeffery D. Webster
  • Patent number: 8088656
    Abstract: A method, including; simultaneously forming a first doped region of an electrostatic discharge protection device and a second doped region of a high-power device by performing a first ion implantation into a semiconductor substrate; and simultaneously forming a third doped region of the electrostatic discharge protection device and a fourth doped region of a first low power device by performing a second ion implantation into the semiconductor substrate, the first ion implantation different from the second ion implantation, the electrostatic discharge device being a different device type from the high-power device and the electrostatic discharge device having a different structure from the high-power device.
    Type: Grant
    Filed: August 14, 2009
    Date of Patent: January 3, 2012
    Assignee: International Business Machines Corporation
    Inventor: Steven Howard Voldman
  • Patent number: 8090702
    Abstract: Methods and arrangements to analyze web traffic of a portal are contemplated. Embodiments include transformations, code, state machines or other logic to analyze web traffic of a portal by a portlet receiving a request for web page content from the portal and generating a fragment of a web page. The fragment may include code to collect data from clients on web traffic of the portlet and to transmit the data to a facility for the collection of data on web traffic of the portal and the portlet. Some embodiments may involve a portal requesting web page content from a portlet, and the portal receiving a fragment of a web page from the portlet. The fragment may include code to collect data from clients on web traffic of the portlet and to transmit the data to the data collection facility.
    Type: Grant
    Filed: September 12, 2006
    Date of Patent: January 3, 2012
    Assignee: International Business Machines Corporation
    Inventors: Steven Howard, Robert S. Keller, Michael S. Nichols, Travis M. Woodruff
  • Publication number: 20110319378
    Abstract: The present invention provides MDM2 inhibitor compounds of Formula I, wherein the variables are defined above, which compounds are useful as therapeutic agents, particularly for the treatment of cancers. The present invention also relates to pharmaceutical compositions that contain an MDM2 inhibitor.
    Type: Application
    Filed: June 3, 2011
    Publication date: December 29, 2011
    Applicant: AMGEN INC.
    Inventors: Michael David BARTBERGER, Ana GONZALEZ BUENROSTRO, Hilary Plake BECK, Xiaoqi CHEN, Richard Victor CONNORS, Jeffrey DEIGNAN, Jason DUQUETTE, John EKSTEROWICZ, Benjamin FISHER, Brian Matthew FOX, Jiasheng FU, Zice FU, Felix GONZALEZ LOPEZ DE TURISO, Michael GRIBBLE, JR., Darin James GUSTIN, Julie Anne HEATH, Xin HUANG, Xianyun JIAO, Michael G. JOHNSON, Frank KAYSER, David John KOPECKY, Sujen LAI, Yihong LI, Zhihong LI, Jiwen LIU, Jonathan Dante LOW, Brian Stuart LUCAS, Zhihua MA, Lawrence McGEE, Joel McINTOSH, Dustin McMINN, Julio Cesar MEDINA, Jeffrey Thomas MIHALIC, Steven Howard Olson, Yosup REW, Philip Marley ROVETO, Daqing SUN, Xiaodong WANG, Yingcai WANG, Xuelei YAN, Ming YU, Jiang ZHU
  • Publication number: 20110224203
    Abstract: The invention provides compounds of the formula (I): The compounds have activity against cyclin dependent kinases, glycogen synthase kinase and Aurora kinases and are therefore useful to treat cancer and viral diseases.
    Type: Application
    Filed: May 26, 2011
    Publication date: September 15, 2011
    Applicant: ASTEX THERAPEUTICS LIMITED
    Inventors: Valerio BERDINI, Michael Alistair O'BRIEN, Maria Grazia CARR, Theresa Rachel EARLY, Eva Figueroa NAVARRO, Adrian Liam GILL, Steven HOWARD, Gary TREWARTHA, Alison Jo-Anne WOOLFORD, Andrew James WOODHEAD, Paul Graham WYATT