Combined dolan bridge and quantum dot josephson junction in series
A method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate with ions, and removing the mask, thereby providing a nanowire. The method further includes forming a first lead and a second lead, the first lead and the second lead each partially overlapping the nanowire. In operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead, one of the third and fourth leads partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.
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The present invention relates to Josephson junctions, and more specifically, to a Dolan bridge Josephson junction and a quantum dot Josephson junction connected in series.
Quantum computers require large numbers of qubits, and combining different types of qubits in a single quantum processor may be advantageous. For example, the ability to combine different types of qubits may have applications in frequency tuning, quantum memory, sensing of qubit states, error correction, and redundancy.
SUMMARYAccording to an embodiment of the present invention, a method of producing a quantum circuit includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate not covered by the mask with ions, and removing the mask, thereby providing a nanowire comprising the first portion of the substrate. The method further includes forming a first lead and a second lead on top of the substrate, the first lead being spaced apart from the second lead, the first lead and the second lead each partially overlapping the nanowire, wherein, in operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The method further includes forming a third lead and a fourth lead on top of the substrate, one of the third lead and the fourth lead partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.
According to an embodiment of the present invention, a quantum circuit includes a substrate, the substrate including a first portion forming a nanowire and a second portion surrounding the first portion. The quantum circuit includes a first lead and a second lead formed on top of the substrate, the first lead being spaced apart from the second lead, the first lead and the second lead each partially overlapping the nanowire, wherein, in operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The quantum circuit includes a third lead and a fourth lead formed on top of the substrate, one of the third lead and the fourth lead partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.
According to an embodiment of the present invention, a quantum computer includes a refrigeration system under vacuum comprising a containment vessel, and a qubit chip contained within a refrigerated vacuum environment defined by the containment vessel, wherein the qubit chip includes a quantum circuit. The quantum computer includes an electromagnetic waveguide arranged within the refrigerated vacuum environment so as to direct electromagnetic energy to and receive electromagnetic energy from the quantum circuit. The quantum circuit includes a substrate, the substrate including a first portion forming a nanowire and a second portion surrounding the first portion. The quantum circuit includes a first lead and a second lead formed on top of the substrate, the first lead being spaced apart from the second lead, the first lead and the second lead each partially overlapping the nanowire, wherein, in operation, a portion of the nanowire between the first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction. The quantum circuit includes a third lead and a fourth lead formed on top of the substrate, one of the third lead and the fourth lead partially overlapping the nanowire, wherein the third lead is separated from the fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction. The nanowire is configured to connect the quantum dot Josephson junction and the Dolan bridge Josephson junction in series.
According to an embodiment of the present invention, forming the first lead and the second lead may include forming the first lead and the second lead to be substantially perpendicular to the nanowire.
According to an embodiment of the present invention, forming the third lead and the fourth lead includes forming the third lead on the substrate such that the third lead partially overlaps the nanowire, oxidizing the third lead to form the dielectric layer, and forming the fourth lead in contact with the dielectric layer.
The third lead may extend substantially perpendicular to the fourth lead, and to the nanowire. However, the embodiments of the invention are not limited to this configuration.
According to an embodiment of the present invention, the method 100 further includes forming a nanowire source lead and a nanowire drain lead on the substrate. The nanowire source lead may be formed to overlap the nanowire at a first end of the nanowire, and the nanowire drain lead may be formed to overlap the nanowire at a second end of the nanowire opposing the first end.
According to an embodiment of the present invention, at least one of the forming the first and second leads and the forming the third and fourth leads includes lift off processing.
According to an embodiment of the present invention, the first and second leads 210, 212 of the quantum dot Josephson junction 208 extend substantially perpendicular to the nanowire 204. However, embodiments of the invention are not limited to this configuration. The first and second leads 210, 212 of the quantum dot Josephson junction 208 may have other orientations with respect to each other, and to the nanowire 204.
According to an embodiment of the present invention, the first portion of the substrate 202 forming the nanowire 204 includes indium arsenide (InAs), and the second portion 206 of the substrate 202 includes InAs implanted with ions. The substrate may include other materials besides or in addition to InAs, for example, 3-5 materials, gallium arsenide (GaAs), or indium gallium arsenide (InGaAs). The ions may be, for example, hydrogen, oxygen, helium, or argon. The nanowire 204 according to an embodiment of the present invention has a width less than 50 nm, and a length between 100 nm and 1000 nm. The nanowire 204 according to an embodiment of the present invention has a length between 500 nm and 1000 nm.
According to an embodiment of the present invention, the third lead 216 of the Dolan bridge Josephson junction 214 extends substantially perpendicular to the fourth lead 218. The third lead 216 of the Dolan bridge Josephson junction 214 may also extend substantially perpendicular to the nanowire 204. However, embodiments of the invention are not limited to these orientations of the third lead 216 with respect to the fourth lead 218 and the nanowire 204.
According to an embodiment of the present invention, the quantum circuit 200 includes a nanowire source lead 222 and a nanowire drain lead 224 formed on the substrate 202. The nanowire source lead 222 overlaps the nanowire 204 at a first end of the nanowire 204, and the nanowire drain lead 224 overlaps the nanowire 204 at a second end of the nanowire 204. The nanowire source lead 222 and nanowire drain lead 224 can be run out to pads, and can contact the pads directly with wire bonding or other methods. The pads can be used to control the current through the nanowire to connect the quantum dot Josephson junction 208 and the Dolan bridge Josephson junction 214 in series.
The process of forming a quantum circuit includes forming a quantum dot Josephson junction on the substrate.
The process of forming a quantum circuit may include forming a nanowire source lead 722 and a nanowire drain lead 724 on the substrate 700. The nanowire source 722 lead may be formed to overlap the nanowire 708 at a first end, and the nanowire drain lead 724 may be formed to overlap the nanowire 708 at a second end opposing the first end.
The process of forming a quantum circuit includes forming a Dolan bridge Josephson junction on top of the substrate.
The quantum circuit includes a first lead 1114 and a second lead 1116 formed on top of the substrate. The first lead 1114 is spaced apart from the second lead 1116. The first lead and the second lead each partially overlap the nanowire 1108. In operation, a portion of the nanowire 1108 between the first and second leads 1114, 1116 forms a quantum dot, thereby providing a quantum dot Josephson junction 1112.
The quantum circuit includes a third lead 1120 and a fourth lead 1122 formed on top of the substrate. One of the third lead 1120 and the fourth lead 1122 partially overlaps the nanowire 1108. The third lead 1120 is separated from the fourth lead 1122 by a dielectric layer, thereby providing a Dolan bridge Josephson junction 1118. The nanowire 1108 is configured to connect the quantum dot Josephson junction 1112 and the Dolan bridge Josephson junction 1118 in series.
According to an embodiment of the present invention, the first and second leads 1114, 1116 of the quantum dot Josephson junction 1112 extend substantially perpendicular to the nanowire 1108. However, embodiments of the invention are not limited to this configuration. The first and second leads 1114, 1116 of the quantum dot Josephson junction 1112 may have other orientations with respect to each other, and to the nanowire 1108.
According to an embodiment of the present invention, the first portion of the substrate forming the nanowire 1108 includes indium arsenide (InAs), and the second portion of the substrate includes InAs implanted with ions. The ions may include, for example, helium ions or hydrogen ions. The nanowire 1108 according to an embodiment of the present invention has a width less than 50 nm, and a length between 100 nm and 1000 nm. The nanowire 1108 according to an embodiment of the present invention has a length between 500 nm and 1000 nm.
According to an embodiment of the present invention, the third lead 1120 of the Dolan bridge Josephson junction 1118 extends substantially perpendicular to the fourth lead 1122. The third lead 1120 of the Dolan bridge Josephson junction 1118 may also extend substantially perpendicular to the nanowire 1108. However, embodiments of the invention are not limited to these orientations of the third lead 1120 with respect to the fourth lead 1122 and the nanowire 1108.
According to an embodiment of the present invention, the quantum circuit 200 includes a nanowire source lead 222 and a nanowire drain lead 224 formed on the substrate 202. The nanowire source lead 222 overlaps the nanowire 204 at a first end of the nanowire 204, and the nanowire drain lead 224 overlaps the nanowire 204 at a second end of the nanowire 204.
According to an embodiment of the present invention, method of producing a nanowire includes forming a mask on a substrate to cover a first portion of the substrate, implanting a second portion of the substrate not covered by the mask with ions, and removing the mask, thereby providing a nanowire comprising the first portion of the substrate. An example of the method of producing a nanowire is schematically illustrated in
The descriptions of the various embodiments of the present invention have been presented for purposes of illustration, but are not intended to be exhaustive or limited to the embodiments disclosed. Many modifications and variations will be apparent to those of ordinary skill in the art without departing from the scope and spirit of the described embodiments. The terminology used herein was chosen to best explain the principles of the embodiments, the practical application or technical improvement over technologies found in the marketplace, or to enable others of ordinary skill in the art to understand the embodiments disclosed herein.
Claims
1. A method of producing a quantum circuit, comprising:
- forming a mask on a substrate to cover a first portion of said substrate;
- implanting a second portion of said substrate not covered by said mask with ions; and
- removing said mask, thereby providing a nanowire comprising said first portion of said substrate;
- forming a first lead and a second lead on top of said substrate, said first lead being spaced apart from said second lead, said first lead and said second lead each partially overlapping said nanowire, wherein, in operation, a portion of said nanowire between said first and second leads forms a quantum dot, thereby providing a quantum dot Josephson junction; and
- forming a third lead and a fourth lead on top of said substrate, one of said third lead and said fourth lead partially overlapping said nanowire, wherein said third lead is separated from said fourth lead by a dielectric layer, thereby providing a Dolan bridge Josephson junction,
- wherein said nanowire is configured to connect said quantum dot Josephson junction and said Dolan bridge Josephson junction in series.
2. The method according to claim 1, wherein forming said first lead and said second lead comprises forming said first lead and said second lead to be substantially perpendicular to said nanowire.
3. The method according to claim 1, wherein forming said third lead and said fourth lead comprises:
- forming said third lead on said substrate such that said third lead partially overlaps said nanowire;
- oxidizing said third lead to form said dielectric layer; and
- forming said fourth lead in contact with said dielectric layer.
4. The method according to claim 1, wherein said third lead extends substantially perpendicular to said fourth lead.
5. The method according to claim 1, wherein said third lead extends substantially perpendicular to said nanowire.
6. The method according to claim 1, further comprising:
- forming a nanowire source lead on said substrate, said nanowire source lead overlapping said nanowire at a first end of said nanowire; and
- forming a nanowire drain lead on said substrate, said nanowire drain lead overlapping said nanowire at a second end of said nanowire, said second end opposing said first end.
7. The method according to claim 1, wherein at least one of said forming said first and second leads and said forming said third and fourth leads comprises lift off processing.
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Type: Grant
Filed: Sep 11, 2019
Date of Patent: Apr 13, 2021
Patent Publication Number: 20210074903
Assignee: INTERNATIONAL BUSINESS MACHINES CORPORATION (Armonk, NY)
Inventors: Steven J. Holmes (Ossining, NY), Devendra K. Sadana (Pleasantville, NY), Ning Li (White Plains, NY), Stephen W. Bedell (Wappingers Falls, NY)
Primary Examiner: Jarrett J Stark
Application Number: 16/567,748
International Classification: H01L 39/02 (20060101); H01L 39/04 (20060101); G06N 10/00 (20190101); H01L 39/24 (20060101); H01L 39/22 (20060101); H01L 21/02 (20060101);