Abstract: The invention provides an adapter card for use with a computing apparatus executing in a multitasking environment program elements that implement call-related functional units requiring DSP (Digital Signal Processor) resources. In a specific example, the call-related functional units provide voice recognition services, IP (Internet Protocol) telephony and voice message, among others. The adapter card includes a switch that receives voice signals from one or more telephone lines physically connected to the adapter card. A digital signal processor is provided on the adapter card and can receive an audio signal from the switch for processing. When anyone of the call-related functional units needs access to the resources of the DSP, it issues a control signal to the switch that responds by directing the audio signal that is to be processed by the call-related functional unit to the digital signal processor.

Abstract: Stable compositions containing biotinylated molecules, such as enzymes, are provided. The compositions include a biotinylated biomolecule, a biomolecule protectant, a buffer, a bulking agent selected from one or more water soluble, nonionic polymers and preferably a terminal sterilization protectant. The compositions can be utilized either as aqueous solutions or preferably in dried form, e.g., as a lyophilized, powder cake. They have applicability in any case where avidin/biotin technology is used and are particularly important as compositions containing a thrombin-like enzyme, e.g., for preparation of a fibrin monomer and fibrin monomer-based fibrin sealants.

Abstract: A method of tucking a pair of refastenable side seams into a body portion of a pant-like garment in which the fold locations can be controlled and the likelihood of creases occurring in the fastening components is reduced or eliminated. The garment is positioned either on one vacuum conveyor or between an upper vacuum conveyor and a lower vacuum conveyor. Vacuum zones from the conveyors hold the garment in place. While the garment is held by the vacuum zones, the refastenable side seams are pushed between the front and back regions toward one another with the fastening components being placed in a flat configuration.

Abstract: A breakaway coupling for a support structure having a first post and a second post, where the breakaway coupling has a first plate coupled to the first post, a second plate coupled to the second post and breakably coupled to the first plate, and a bearing positioned between the first plate and the second plate having a bearing member located in an opening of the bearing housing and contacting at least one of the first and second plates.

Abstract: A method and apparatus for determining the velocity of a rotating device is described herein. The apparatus includes a magnet assembly affixed to a rotating shaft of a rotating device and a circuit assembly. The circuit assembly includes a circuit interconnection having a sense coil and sensors affixed thereto.

Abstract: An apparatus for a hand-held pneumatic impact tool for use in fine hand working operations includes a handpiece, a foot-operated flow control valve with exhaust and two hand operated flow control valves. The handpiece includes a housing having a cavity and annular shoulder accommodating a stepped piston dividing the cavity into three chambers. The control apparatus provides control for a hand-held pneumatic impact tool that will return an impacting handpiece to a fine oscillation idling state quickly when the user releases the foot-operated flow control valve. The apparatus also provides ease of control for adjusting the idling ready state of the handpiece to a faint oscillation idle.

Abstract: An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.

Abstract: An apparatus for a hand-held pneumatic impact tool for use in fine hand working operations includes a handpiece, a foot-operated flow control valve with exhaust and two hand operated flow control valves. The handpiece includes a housing having a cavity and annular shoulder accommodating a stepped piston dividing the cavity into three chambers. The control apparatus provides control for a hand-held pneumatic impact tool that will return an impacting handpiece to a fine oscillation idling state quickly when the user releases the foot-operated flow control valve. The apparatus also provides ease of control for adjusting the idling ready state of the handpiece to a faint oscillation idle.

Abstract: An method and system that allows a patient to access stored preset patient therapy programs, that are resident in a medical device such an implantable pump or a combination medical device having an implantable pump and a implantable neural stimulator, and to create personalized therapy programs or automatic timing therapy programs from preset therapy programs to accommodate the patient's particular activity. Alternatively, the patient can select and access stored preset patient therapy programs and combine at least two modified or unmodified preset therapy programs to create personalized therapy programs.

Abstract: In a vortex separator for use in at least partially removing suspended solids from a liquid containing suspended solids, the inlet port (8), whereby the liquid is introduced tangentially into a vortex chamber, has a substantially rectangular cross-section at a curved internal wall surface (2) of the chamber and the long axis of the rectangle is preferably aligned substantially parallel with the longitudinal axis of the curved internal wall surface (2). The inlet port (8) preferably has a short side dimension which is not substantially greater than the thickness of the boundary layer of the liquid in the vortex chamber in use, so that the introduced liquid is substantially maintained in the boundary layer of the liquid at the internal wall surface.

Abstract: A semiconductor structure for isolating high frequency circuitry includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, a plurality of high frequency circuits formed in and over the monocrystalline compound semiconductor material, and at least one embedded isolation wall lying within the compound semiconductor material to isolate the high frequency circuits.

Abstract: A semiconductor structure for a high frequency monolithic switch matrix includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and a high frequency semiconductor integrated formed in and over the monocrystalline compound semiconductor material having one or more input ports and one or more output ports. The high frequency semiconductor integrated circuit also includes a high frequency switch circuit that is electrically coupled to a switch driver control circuit that is fabricated on the monocrystalline compound semiconductor material and which provides the DC signals required to control the high frequency circuit.

Abstract: Various semiconductor device structures that include an inductor or balun can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from a silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. In addition, formation of a compliant substrate may include utilizing surfactant enhanced epitaxy, epitaxial growth of single crystal silicon onto single crystal oxide, and epitaxial growth of Zintl phase materials.

Abstract: A semiconductor structure includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material. A composite transistor includes a first transistor having first active regions formed in the monocrystalline silicon substrate, a second transistor having second active regions formed in the monocrystalline compound semiconductor material, and a mode control terminal for controlling the first transistor and the second transistor.

Abstract: Various semiconductor device structures that include one or more capacitors can be formed using a semiconductor structure having a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material; and a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, and/or other types of material such as metals and non-metals.

Abstract: High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. An accommodating buffer layer comprises a layer of monocrystalline oxide spaced apart from the silicon wafer by an amorphous interface layer of silicon oxide. The amorphous interface layer dissipates strain and permits the growth of a high quality monocrystalline oxide accommodating buffer layer. The accommodating buffer layer is lattice matched to both the underlying silicon wafer and the overlying monocrystalline material layer. Any lattice mismatch between the accommodating buffer layer and the underlying silicon substrate is taken care of by the amorphous interface layer. Radio frequency, optical, logic and other circuits in both silicon and compound semiconductor materials may be combined and interconnected in a single semiconductor structure.

Abstract: An integrated circuit for intermediate impedance matching and stabilization of high power devices is disclosed. High quality epitaxial layers of monocrystalline materials grown over monocrystalline substrates enables the formation of impedance matching and stability circuits to be placed on the same substrate as the active device. Additionally, by using the manifolds of the active to form plates of a capacitor, an impedance matching network of series inductance and shunt capacitor can be compactly fabricated for increasing the output impedance to intermediate levels. The manifolds of the active device are also used to form capacitors to provide stability to high power active devices.

Abstract: Microelectromechanical (MEMS) devices are integrated with high frequency devices on a monolithic substrate or wafer. High quality epitaxial layers of monocrystalline materials can be grown overlying monocrystalline substrates such as large silicon wafers by forming a compliant substrate for growing the monocrystalline layers. MEMS devices, such as a switch, a variable capacitance device or a temperature control structure, are formed in the base monocrystalline substrate. High frequency devices, such as transistors or diodes, are formed in the overlaying layer of monocrystalline materials.

Abstract: A semiconductor structure for integrated control of an active subcircuit includes a monocrystalline silicon substrate, an amorphous oxide material overlying the monocrystalline silicon substrate, a monocrystalline perovskite oxide material overlying the amorphous oxide material, a monocrystalline compound semiconductor material overlying the monocrystalline perovskite oxide material, the active subcircuit in the monocrystalline compound semiconductor material, and a bias subcircuit in the monocrystalline silicon substrate and electrically coupled to the active subcircuit to bias the active subcircuit.