Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: Disclosed is lithium iron phosphate having an olivine crystal structure, wherein the lithium iron phosphate has a composition represented by the following Formula 1 and carbon (C) is coated on the particle surface of the lithium iron phosphate containing a predetermined amount of sulfur (S). Li1+aFe1?xMx(PO4?b)Xb??(1) (wherein M, X, a, x, and b are the same as defined in the specification).

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

Abstract: High energy density lithium secondary batteries are disclosed herein. In some embodiments, a high energy density lithium secondary battery includes a cathode, an anode, and a separator. The cathode includes a first cathode active material having a layered structure and a second cathode active material having a spinel structure, wherein the amount of the first cathode active material is between 40 and 100 wt % based on the total weight of the cathode active materials. The anode includes crystalline graphite and amorphous carbon as anode active materials, wherein the amount of the crystalline graphite is between 40 and 100 wt % based on the total weight of the anode active materials.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract: Disclosed is a high-energy lithium secondary battery including: a cathode including, as cathode active materials, a first cathode active material represented by Formula 1 below and having a layered structure and a second cathode active material represented by Formula 2 below and having a spinel structure, wherein the amount of the first cathode active material is between 40 and 100 wt % based on a total weight of the cathode active materials; an anode including amorphous carbon having a capacity of 300 mAh/g or more; and a separator.

Abstract: An apparatus includes a first substrate having a first land and a second substrate having a second land. A first molding compound is disposed between the first substrate and the second substrate. A first semiconductor chip is disposed on the first substrate and in contact with the first molding portion. A first connector contacts the first land and a second connector contacts the second land. The second connector is disposed on the first connector. A volume of the second connector is greater than a volume of the first connector. A surface of the first semiconductor chip is exposed. The first molding compound is in contact with the second connector, and at least a portion of the second connector is surrounded by the first molding compound.

Abstract: In a method of manufacturing a semiconductor device, a mask layer and a first layer may be sequentially formed on a substrate. The first layer may be patterned by a photolithography process to form a first pattern. A silicon oxide layer may be formed on the first pattern. A coating pattern including silicon may be formed on the silicon oxide layer. The mask layer may be etched using a second pattern as an etching mask to form a mask pattern, and the second pattern may includes the first pattern, the silicon oxide layer and the coating pattern. The mask pattern may have a uniform size.

Abstract: The present invention relates to an automatic driving system for a vehicle, and more specifically, to an automatic driving system for a vehicle which controls a vehicle to be automatically driven to a destination in consideration of traffic signals and peripheral vehicles or objects, when a driver sets the destination in a navigation device. To this end, the system according to the present invention comprises: a mapping module for setting a driving lane by receiving route information set in a navigation device installed in a vehicle and then, converting a distance, direction, and rotation angle to actual measurement data; and a driving control module for having a vehicle be driven along the driving lane set by the mapping module.

Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming an anti-reflection layer on a lower layer, forming photoresist patterns on the anti-reflection layer, forming protection patterns to cover the photoresist patterns, respectively, etching the anti-reflection layer using the photoresist patterns covered with the protection patterns as an etch mask to form anti-reflection patterns, forming spacers to cover sidewalls of the anti-reflection patterns, and removing the anti-reflection patterns.

Abstract: A method of manufacturing a semiconductor device, including forming an etching target film on a substrate; forming an anti-reflection film on the etching target film; forming a photoresist film on the anti-reflection film; exposing the photoresist film; performing heat treatment on the anti-reflection film and the photoresist film to form a covalent bond between the anti-reflection film and the photoresist film; and developing the photoresist film.

Abstract: A high-output lithium secondary battery is provided. In some embodiments, the lithium secondary battery includes a cathode having a first cathode active material having a layered structure and. a second cathode active material having a spinel structure, wherein the-amount of the second cathode active material is between 40 and 100 wt % based on the total weight of the cathode active materials, an anode including crystalline graphite having a specific surface area (with respect to capacity) of 0.005 to 0.013 m2/mAh as an anode active material, and a separator.

Abstract: Packages substrates are provided. The package substrates may include a substrate and a set of leads disposed on the substrate. The set of lead may include a first lead, a second lead and a third lead, which are sequentially disposed along a first direction. Each of the first lead, the second lead and the third lead may extend along a second direction that is different from the first direction. The first lead and the second lead may be spaced apart at a first distance, and the second lead and the third lead may be spaced apart at a second distance that is less than the first distance.

Abstract: Provided are a semiconductor package and a method of fabricating the same. The package substrate includes a hole, which may be used to form a mold layer without any void. The mold layer may be partially removed to expose a lower conductive pattern. Accordingly, it is possible to improve routability of solder balls.

Abstract: Disclosed is a high-output lithium secondary battery including: a cathode that includes, as cathode active materials, a first cathode active material represented by Formula 1 below and having a layered structure and a second cathode active material represented by Formula 2 below and having a spinel structure, wherein the amount of the second cathode active material is between 40 and 100 wt % based on the total weight of the cathode active materials; an anode including crystalline graphite and amorphous carbon as anode active materials, wherein the amount of the amorphous carbon is between 40 and 100 wt % based on the total weight of the anode active materials; and a separator.

Abstract: Provided are a semiconductor package and a method of fabricating the same. The package substrate includes a hole, which may be used to form a mold layer without any void. The mold layer may be partially removed to expose a lower conductive pattern. Accordingly, it is possible to improve routability of solder balls.

Abstract: Provided are a method of forming patterns and a method of manufacturing an integrated circuit device. In the method of forming patterns, a photoresist pattern having a first opening exposing a first region of a target layer is formed. A capping layer is formed at sidewalls of the photoresist pattern defining the first opening. An insoluble region is formed around the first opening by diffusing acid from the capping layer to the inside of the photoresist pattern. A second opening exposing a second region of the target layer is formed by removing a soluble region spaced apart from the first opening, with the insoluble region being interposed therebetween. The target layer is etched using the insoluble region as an etch mask.

Abstract: Disclosed is lithium iron phosphate having an olivine crystal structure, wherein the lithium iron phosphate has a composition represented by the following Formula 1, a sulfur compound with a sulfide bond is contained, as an impurity, in the lithium iron phosphate particles, and carbon (C) is coated on particle surfaces of the lithium iron phosphate: Li1+aFe1-xMx(PO4-b)Xb??(1) (wherein M, X, a, x, and b are the same as defined in the specification).

Abstract: Disclosed is a high-output lithium secondary battery including: a cathode that includes, as cathode active materials, a first cathode active material represented by Formula 1 below and having a layered structure and a second cathode active material represented by Formula 2 below and having a spinel structure, wherein the amount of the second cathode active material is between 40 and 100 wt % based on the total weight of the cathode active materials; an anode including amorphous carbon having a capacity of 300 mAh/g or greater; and a separator.