Abstract: The present disclosure describes a container for placing an object therein. The container includes a container body and a lid over the container body, a collision-preventing portion attached to one or more of the container body and the lid and configured to buffer an impact force, a pairing recognition mechanism configured to detect an object placed in the container body, and a liquid-detecting sensor configured to detect a leakage from the object.

Abstract: A method for monitoring gas in a wafer processing system is provided. The method includes producing an exhaust flow in an exhausting conduit from a processing chamber. The method further includes placing a gas sensor in fluid communication with a detection point located in the exhausting conduit via a sampling tube that passes through a through hole formed on the exhausting conduit. The detection point is located away from the through hole. The method also includes detecting a gas condition at the detection point with the gas sensor. In addition, the method also includes analyzing the gas condition detected by the gas sensor to determine if the gas condition in the exhausting conduit is in a range of values.

Abstract: A method is provided and includes the following steps. A first wafer is coupled to a first support of a bonding tool and a second wafer is coupled to a second support of the bonding tool. The second wafer is bonded to the first wafer with the first wafer coupled to the first support. Whether a bubble is between the bonded first and second wafers in the bonding tool is detected.

Abstract: A method of manufacturing a semiconductor device and a semiconductor processing system are provided. The method includes the following steps. A photoresist layer is formed on a substrate in a lithography tool. The photoresist layer is exposed in the lithography tool to form an exposed photoresist layer. The exposed photoresist layer is developed to form a patterned photoresist layer in the lithography tool by using a developer. An ammonia gas by-product of the developer is removed from the lithography tool.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a dielectric layer is provided. Then, trenches are formed in the dielectric layer. Thereafter, the trenches are filled with spacer material to form a spacer structure in the dielectric layer for defining pixel regions. Then, lens structures are formed on the pixel regions. Each of the lens structures includes a first curved lens layer, a second curved lens layer and a curved color filter layer. The curved color filter layer is disposed on the second curved lens layer or between the first curved lens layer and the second curved lens layer.

Abstract: A semiconductor device and a method for fabricating the semiconductor device are provided. In the method for fabricating the semiconductor device, at first, a dielectric layer is provided. Then, trenches are formed in the dielectric layer. Thereafter, the trenches are filled with spacer material to form a spacer structure in the dielectric layer for defining pixel regions. Then, lens structures are formed on the pixel regions. Each of the lens structures includes a first curved lens layer, a second curved lens layer and a curved color filter layer. The curved color filter layer is disposed on the second curved lens layer or between the first curved lens layer and the second curved lens layer.

Abstract: A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (H3PO4), nitric acid (HNO3), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.

Abstract: A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.

Abstract: A method for forming salicides with lower sheet resistance and increased sheet resistance uniformity over a semiconductor process wafer including providing a semiconductor process wafer having exposed silicon containing areas at a process surface; depositing a metal layer including at least one of cobalt and titanium over the process surface; carrying out at least one thermal annealing process to react the metal layer and silicon to form a metal silicide over the silicon containing areas; and, wet etching unsilicided areas of the metal layer with a wet etching solution including phosphoric acid (H3PO4), nitric acid (HNO3), and a carboxylic acid to leave salicides covering silicon containing areas at the process surface.

Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.

Abstract: A method for reducing a dinitrogen (N2) ion concentration in an ion implanter including providing an ion implanter having an ion source chamber for producing source ions said ion source chamber surrounded by a plurality of source magnets having a current supply for altering a position of said source ions; providing a gaseous source of material to the ion source chamber for ionization thereby creating a supply of source ions for implantation; creating a supply of source ions to include dinitrogen (N2) ions and nitrogen (N) ions supplied for implantation; and, increasing a current supply to at least one of the plurality of source magnets such that a ratio of dinitrogen (N2) ions to nitrogen (N) ions supplied for implantation is reduced.

Abstract: A method for eliminating wafer breakage during a wafer transfer process in a grinding apparatus by a wafer transfer pad and an apparatus for conducting such method are disclosed. In the method, a surface of the vacuum pad, or the wafer transfer pad, that is formed of sintered ceramic is first cleaned by contacting a rotating brush and a spray of cleaning solvent. The invention further discloses an apparatus for eliminating wafer breakage during the wafer transfer process by a vacuum pad by incorporating a pressure regulating valve situated in the vacuum conduit such that a vacuum pressure applied can be regulated at a rate not higher than 30 psi/sec. to the surface of the wafer transfer pad.

Abstract: A method for eliminating wafer breakage during a wafer transfer process in a grinding apparatus by a wafer transfer pad and an apparatus for conducting such method are disclosed. In the method, a surface of the vacuum pad, or the wafer transfer pad, that is formed of sintered ceramic is first cleaned by contacting a rotating brush and a spray of cleaning solvent. The invention further discloses an apparatus for eliminating wafer breakage during the wafer transfer process by a vacuum pad by incorporating a pressure regulating valve situated in the vacuum conduit such that a vacuum pressure applied can be regulated at a rate not higher than 30 psi/sec. to the surface of the wafer transfer pad.

Abstract: A wafer chuck for use in a semiconductor process chamber capable of producing an inert gas blanket positioned on the chuck from residual chemical vapor in the chamber is disclosed. A plurality of mounting pins for supporting a wafer is further provided in the upper surface for forming an inert gas into a cavity formed between the wafer and the upper surface of the chuck. A plurality of apertures in a sidewall of the body portion for flowing an inert gas into the lower chamber forming an inert gas blanket blocking a passageway between the upper and lower chambers, thus preventing the wafer from damage by residual chemical vapor in the lower chamber.

Abstract: A method for forming lining oxide in an opening for a shallow trench isolation and a method for forming a shallow trench isolation incorporating a lining oxide layer are described. In the method for forming lining oxide, a silicon substrate is first provided, followed by a process of forming a pad oxide layer and a silicon nitride mask sequentially on top of the silicon substrate. A trench opening is then patterned and formed in the silicon substrate for the shallow trench isolation. The silicon substrate is then annealed at a temperature of at least 1,000° C. in a furnace in an environment that contains not more than 10 vol. % oxygen. A lining oxide layer is formed in the same furnace used for annealing the structure of the trench opening in the silicon substrate.

Abstract: A method for forming silicon oxide layers on silicon wafers by a wet oxidation process that utilizes a dual-stage pyrolysis is described. The process can be carried out by flowing a first H2/O2 mixture that has a first H2/O2 gas mixture ratio into a torch and then feeding water vapor generated into the wet oxidation chamber to form a first layer of silicon oxide, and then flowing a second H2/O2 mixture that has a second H2/O2 gas mixture ratio into the torch and feeding water vapor generated into the wet oxidation chamber for forming a second thickness of the silicon oxide layer. The second H2/O2 ratio is smaller than the first H2/O2 ratio by at least ⅓ of the value of the first H2/O2 ratio. For instance, when the first H2/O2 ratio used is large than 1.5, the second H2/O2 ratio used is less than 1.2. In one example, the first H2/O2 gas mixture ratio utilized is 1.8, while the second H2/O2 gas mixture ratio utilized is 1.0. It has been found that by reducing the hydrogen content, i.e.