Patents by Inventor Sudha Rathi
Sudha Rathi has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20120285481Abstract: Embodiments of the invention generally relate to methods of removing and/or cleaning a substrate surface having different material layers disposed thereon using water vapor plasma treatment. In one embodiment, a method for cleaning a surface of a substrate includes positioning a substrate into a processing chamber, the substrate having a dielectric layer disposed thereon forming openings on the substrate, exposing the dielectric layer disposed on the substrate to water vapor supplied into the chamber to form a plasma in the water vapor, maintaining a process pressure in the chamber at between about 1 Torr and about 120 Torr, and cleaning the contact structure formed on the substrate.Type: ApplicationFiled: November 8, 2011Publication date: November 15, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Kwangduk Douglas Lee, Sudha Rathi, Chiu Chan, Martin J. Seamons, Bok Heon Kim
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Publication number: 20120285492Abstract: Embodiments of the invention generally relate to methods of dry stripping boron-carbon films. In one embodiment, alternating plasmas of hydrogen and oxygen are used to remove a boron-carbon film. In another embodiment, co-flowed oxygen and hydrogen plasma is used to remove a boron-carbon containing film. A nitrous oxide plasma may be used in addition to or as an alternative to either of the above oxygen plasmas. In another embodiment, a plasma generated from water vapor is used to remove a boron-carbon film. The boron-carbon removal processes may also include an optional polymer removal process prior to removal of the boron-carbon films. The polymer removal process includes exposing the boron-carbon film to NF3 to remove from the surface of the boron-carbon film any carbon-based polymers generated during a substrate etching process.Type: ApplicationFiled: April 26, 2012Publication date: November 15, 2012Applicant: Applied Materials, Inc.Inventors: Kwangduk Douglas Lee, Sudha Rathi, Ramprakash Sankarakrishnan, Martin Jay Seamons, Irfan Jamil, Bok Hoen Kim
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Patent number: 8282734Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.Type: GrantFiled: October 21, 2008Date of Patent: October 9, 2012Assignee: Applied Materials, Inc.Inventors: Deenesh Padhi, Chiu Chan, Sudha Rathi, Ganesh Balasubramanian, Jianhua Zhou, Karthik Janakiraman, Martin J. Seamons, Visweswaren Sivaramakrishnan, Derek R. Witty, Hichem M'Saad
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Publication number: 20120208373Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.Type: ApplicationFiled: April 25, 2012Publication date: August 16, 2012Applicant: Applied Materials, Inc.Inventors: DEENESH PADHI, Hyoung-Chan Ha, Sudha Rathi, Derek R. Witty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
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Publication number: 20120204795Abstract: An article having a protective coating for use in semiconductor applications and methods for making the same are provided. In certain embodiments, a method of coating an aluminum surface of an article utilized in a semiconductor processing chamber is provided. The method comprises providing a processing chamber; placing the article into the processing chamber; flowing a first gas comprising a carbon source into the processing chamber; flowing a second gas comprising a nitrogen source into the processing chamber; forming a plasma in the chamber; and depositing a coating material on the aluminum surface. In certain embodiments, the coating material comprises an amorphous carbon nitrogen containing layer. In certain embodiments, the article comprises a showerhead configured to deliver a gas to the processing chamber.Type: ApplicationFiled: April 26, 2012Publication date: August 16, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Deenesh Padhi, Chiu Chan, Sudha Rathi, Ganesh Balasubramanian, Jianhua Zhou, Karthik Janakiraman, Martin J. Seamons, Visweswaren Sivaramakrishnan, Derek R. Witty, Hichem M'Saad
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Patent number: 8211626Abstract: We have determined that it is necessary to remove hydroxyl groups from the surface of a DARC over which a CAR photoresist is applied, to reduce poisoning of the photoresist during imaging. The poisoning is reduced by treating the surface of the DARC film with a hydrogen or helium-containing plasma which is capable of removing the hydroxyl groups.Type: GrantFiled: December 13, 2006Date of Patent: July 3, 2012Assignee: Applied Materials, Inc.Inventors: Sang H. Ahn, Sudha Rathi, Heraldo L. Bothelho
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Patent number: 8183150Abstract: The present invention provides semiconductor device formed by an in situ plasma reducing process to reduce oxides or other contaminants, using a compound of nitrogen and hydrogen, typically ammonia, at relatively low temperatures prior to depositing a subsequent layer thereon. The adhesion characteristics of the layers are improved and oxygen presence is reduced compared to the typical physical sputter cleaning process of an oxide layer. This process may be particularly useful for the complex requirements of a dual damascene structure, especially with copper applications.Type: GrantFiled: October 24, 2008Date of Patent: May 22, 2012Assignee: Applied Materials, Inc.Inventors: Judy H. Huang, Christopher Dennis Bencher, Sudha Rathi, Christopher S. Ngai, Bok Hoen Kim
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Publication number: 20120080779Abstract: Embodiments of the present invention generally relate to the fabrication of integrated circuits and particularly to the deposition of a boron containing amorphous carbon layer on a semiconductor substrate. In one embodiment, a method of processing a substrate in a processing chamber is provided. The method comprises providing a substrate in a processing volume, flowing a hydrocarbon containing gas mixture into the processing volume, generating a plasma of the hydrocarbon containing gas mixture by applying power from an RF source, flowing a boron containing gas mixture into the processing volume, and depositing a boron containing amorphous carbon film on the substrate in the presence of the plasma, wherein the boron containing amorphous carbon film contains from about 30 to about 60 atomic percentage of boron.Type: ApplicationFiled: September 30, 2011Publication date: April 5, 2012Applicant: APPLIED MATERIALS, INC.Inventors: Martin Jay SEAMONS, Sudha RATHI, Kwangduk Douglas LEE, Deenesh PADHI, Bok Hoen KIM, Chiu CHAN
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Patent number: 8125034Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.Type: GrantFiled: June 9, 2010Date of Patent: February 28, 2012Assignee: Applied Materials, Inc.Inventors: Wendy H. Yeh, Martin J. Seamons, Matthew Spuller, Sum-Yee Betty Tang, Kwangduk Douglas Lee, Sudha Rathi
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Patent number: 8105465Abstract: Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.Type: GrantFiled: October 12, 2009Date of Patent: January 31, 2012Assignee: Applied Materials, Inc.Inventors: Kwangduk Douglas Lee, Takashi Morii, Yoichi Suzuki, Sudha Rathi, Martin Jay Seamons, Deenesh Padhi, Bok Hoen Kim, Cynthia Pagdanganan
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Patent number: 8088563Abstract: We have traced the detachment of photoresist during development of patterned features in the range of about 90 nm and smaller to a combination of the reduced “foot print” of the pattern on the underlying substrate and to the contact angle between the underlying substrate surface and the developing reagent. By maintaining a contact angle of about 30 degrees or greater, the detachment of the photoresist from the underlying substrate can be avoided for photoresists including feature sizes in the range of about 90 nm. We have achieved an increased contact angle between the DARC surface and a water-based CAR photoresist developer while simultaneously reducing CAR poisoning by treating the surface of the DARC after film formation.Type: GrantFiled: November 21, 2006Date of Patent: January 3, 2012Assignee: Applied Materials, Inc.Inventors: Sang H. Ahn, Sudha Rathi, Heraldo L. Bothelho
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Publication number: 20110291243Abstract: Methods for manufacturing a semiconductor device in a processing chamber are provided.Type: ApplicationFiled: May 28, 2010Publication date: December 1, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Martin Jay Seamons, Kwangduk Douglas Lee, Chiu Chan, Patrick Reilly, Sudha Rathi
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Publication number: 20110287633Abstract: A method of forming an amorphous carbon layer on a substrate in a substrate processing chamber, includes introducing a hydrocarbon source into the processing chamber, introducing argon, alone or in combination with helium, hydrogen, nitrogen, and combinations thereof, into the processing chamber, wherein the argon has a volumetric flow rate to hydrocarbon source volumetric flow rate ratio of about 10:1 to about 20:1, generating a plasma in the processing chamber at a substantially lower pressure of about 2 Torr to 10 Torr, and forming a conformal amorphous carbon layer on the substrate.Type: ApplicationFiled: May 20, 2010Publication date: November 24, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Kwangduk Douglas Lee, Martin Jay Seamons, Sudha Rathi, Chiu Chan, Michael H. Lin
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Publication number: 20110151142Abstract: Embodiments of the present invention provide methods for reducing defects during multi-layer deposition. In one embodiment, the method includes exposing the substrate to a first gas mixture and an inert gas in the presence of a plasma to deposit a first material layer on the substrate, terminating the first gas mixture when a desired thickness of the first material is achieved while still maintaining the plasma and flowing the inert gas, and exposing the substrate to the inert gas and a second gas mixture that are compatible with the first gas mixture in the presence of the plasma to deposit a second material layer over the first material layer in the same processing chamber, wherein the first material layer and the second material layer are different from each other.Type: ApplicationFiled: December 15, 2010Publication date: June 23, 2011Applicant: APPLIED MATERIALS, INC.Inventors: Martin Jay Seamons, Sum-Yee Betty Tang, Michael H. Lin, Patrick Reilly, Sudha Rathi
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Publication number: 20110104400Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.Type: ApplicationFiled: January 10, 2011Publication date: May 5, 2011Inventors: Deenesh Padhi, Hyoung-Chan Ha, Sudha Rathi, Derek R. Witty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
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Publication number: 20110090613Abstract: The present invention generally provides methods and apparatus for monitoring and maintaining flatness of a substrate in a plasma reactor. Certain embodiments of the present invention provide a method for processing a substrate comprising positioning the substrate on an electrostatic chuck, applying an RF power between the an electrode in the electrostatic chuck and a counter electrode positioned parallel to the electrostatic chuck, applying a DC bias to the electrode in the electrostatic chuck to clamp the substrate on the electrostatic chuck, and measuring an imaginary impedance of the electrostatic chuck.Type: ApplicationFiled: November 19, 2010Publication date: April 21, 2011Inventors: Ganesh Balasubramanian, Amit Bansal, Eller Y. Juco, Mohamad Ayoub, Hyung-Joon Kim, Karthik Janakiraman, Sudha Rathi, Deenesh Padhi, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Amir Al-Bayati, Derek R. Witty, Hichem M'Saad, Anton Baryshnikov, Chiu Chan, Shuang Liu
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Patent number: 7867578Abstract: A method for depositing an amorphous carbon layer on a substrate includes the steps of positioning a substrate in a chamber, introducing a hydrocarbon source into the processing chamber, introducing a heavy noble gas into the processing chamber, and generating a plasma in the processing chamber. The heavy noble gas is selected from the group consisting of argon, krypton, xenon, and combinations thereof and the molar flow rate of the noble gas is greater than the molar flow rate of the hydrocarbon source. A post-deposition termination step may be included, wherein the flow of the hydrocarbon source and the noble gas is stopped and a plasma is maintained in the chamber for a period of time to remove particles therefrom.Type: GrantFiled: June 28, 2006Date of Patent: January 11, 2011Assignee: Applied Materials, Inc.Inventors: Deenesh Padhi, Hyoung-Chan Ha, Sudha Rathi, Derek R. Witty, Chiu Chan, Sohyun Park, Ganesh Balasubramanian, Karthik Janakiraman, Martin Jay Seamons, Visweswaren Sivaramakrishnan, Bok Hoen Kim, Hichem M'Saad
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Publication number: 20100239979Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.Type: ApplicationFiled: June 9, 2010Publication date: September 23, 2010Inventors: Wendy H. Yeh, Martin J. Seamons, Matthew Spuller, Sum-Yee Betty Tang, Kwangduk Douglas Lee, Sudha Rathi
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Patent number: 7776516Abstract: A method of forming a device using a graded anti-reflective coating is provided. One or more amorphous carbon layers are formed on a substrate. An anti-reflective coating (ARC) is formed on the one or more amorphous carbon layers wherein the ARC layer has an absorption coefficient that varies across the thickness of the ARC layer. An energy sensitive resist material is formed on the ARC layer. An image of a pattern is introduced into the layer of energy sensitive resist material by exposing the energy sensitive resist material to patterned radiation. The image of the pattern introduced into the layer of energy sensitive resist material is developed.Type: GrantFiled: July 18, 2006Date of Patent: August 17, 2010Assignee: Applied Materials, Inc.Inventors: Wendy H. Yeh, Martin J. Seamons, Matthew Spuller, Sum-Yee Betty Tang, Kwangduk Douglas Lee, Sudha Rathi
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Publication number: 20100093187Abstract: Methods and apparatus for depositing an amorphous carbon layer on a substrate are provided. In one embodiment, a deposition process includes positioning a substrate in a substrate processing chamber, introducing a hydrocarbon source having a carbon to hydrogen atom ratio of greater than 1:2 into the processing chamber, introducing a plasma initiating gas selected from the group consisting of hydrogen, helium, argon, nitrogen, and combinations thereof into the processing chamber, with the hydrocarbon source having a volumetric flow rate to plasma initiating gas volumetric flow rate ratio of 1:2 or greater, generating a plasma in the processing chamber, and forming a conformal amorphous carbon layer on the substrate.Type: ApplicationFiled: October 12, 2009Publication date: April 15, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Kwangduk Douglas Lee, Takashi Morii, Yoichi Suzuki, Sudha Rathi, Martin Jay Seamons, Deenesh Padhi, Bok Hoen Kim, Cynthia Pagdanganan