Abstract: A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.

Abstract: An interface system capable of minimizing an electro magnetic interference.

Abstract: A protective layer of a plasma display panel includes smoky magnesium oxide, the smoky magnesium oxide having single crystal magnesium oxide with a plurality of cavities therein.

Abstract: A switching control circuit for a scan driving unit or a sustain driving unit of a plasma display panel driving device is disclosed. The switching control circuit includes a level shift circuit configured to generate a level-shifted signal by level shifting a control signal to a level referenced to a negative reference voltage, where the control signal was referenced to a ground voltage. The switching control circuit also includes a driver IC configured to amplify the level-shifted signal, and a switching circuit configured to perform a switching operation corresponding to the output signal.

Abstract: A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate, forming a first recess in the substrate and a passivation layer on sidewalls of the first recess using the hard mask pattern as an etch barrier, and forming a second recess by etching a bottom portion of the first recess using the passivation layer as an etch barrier, wherein a width of the second recess is greater than that of the first recess.

Abstract: Provided is an analog-to-digital converter. The analog-to-digital converter includes a resistor string for generating a plurality of reference voltages; a plurality of differential difference amplifiers for detecting zero-crossing points according to interpolation by using the plurality of reference voltages and input signals; and a plurality of comparators for receiving outputs of the plurality of differential difference amplifiers, detecting zero-crossing points according to 4X interpolation, and generating a digital code corresponding to the input signals.

Abstract: A plasma display is disclosed. In one aspect, the display includes a scan driving board that applies a sustain pulse to a scan electrode during a sustain period and a sustain driving board that applies a sustain pulse to a sustain electrode during the sustain period. The scan driving board and the sustain driving board are connected by a harness. Ground wires are disposed at both sides of the harness and main path wires are disposed between the ground wires.

Abstract: Provided are a protective layer made of magnesium oxide containing at least one rare earth element selected from the group consisting of the rare earth elements, in which the content of the at least one rare earth element is from about 5.0×10?5 to about 6.0×10?4 per 1 part by weight of the magnesium oxide, a composite for forming the protective layer, a method of forming the protective layer, and a plasma display panel including the protective layer. The protective layer can reduce a discharge delay time and the temperature dependency of the discharge delay time, and thus, is suitable for single scan and an increase in Xe content.

Abstract: A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.

Abstract: A plasma display device and method of driving the device is disclosed. The device includes a driving circuit for driving reset, address, and sustain periods during a subfield of a frame. The driving circuit includes a single switch which is used to drive a display electrode both during the reset period and during the sustain period. The switch being used for both periods removes the need for a second switch, thereby reducing manufacturing and design costs.

Abstract: A method for fabricating a semiconductor device includes forming an inter-layer insulation layer on a substrate; forming openings in the inter-layer insulation layer; forming a metal barrier layer in the openings and on the inter-layer insulation layer; forming a first conductive layer on the metal barrier layer and filled in the openings; etching the first conductive layer to form interconnection layers in the openings and to expose portions of the metal barrier layer, the interconnection layers being inside the openings and at a depth from a top of the openings; etching the exposed portions of the metal barrier layer to obtain a sloped profile of the metal barrier layer at top lateral portions of the openings; forming a second conductive layer over the inter-layer insulation layer, the interconnection layers and the metal barrier layer with the sloped profile; and patterning the second conductive layer to form metal lines.

Abstract: A display device includes a display panel for displaying an image, a chassis base for supporting the display panel and a heat dissipating plate at one side of the chassis base. The display device further includes a printed circuit board between the heat dissipating plate and the chassis base attached to the heat dissipating plate and electrically connected to the display panel, and a switch electrically connected to the printed circuit board to generate a signal for controlling the display panel, the switch being attached to the heat dissipating plate.

Abstract: A method for fabricating a semiconductor device includes forming a hard mask pattern over a substrate having a field oxide layer, etching the substrate to form a recess by using the hard mask pattern, forming a first conductive layer over the recess and the hard mask pattern, planarizing the first conductive layer, and forming a second conductive layer over the planarized first conductive layer.

Abstract: A protective layer of a plasma display panel includes smoky magnesium oxide, the smoky magnesium oxide having single crystal magnesium oxide with a plurality of cavities therein.

Abstract: Provided are a protecting layer for a plasma display panel (PDP), a method of forming the same, and a PDP including the protecting layer. The protecting layer includes a magnesium oxide-containing layer having a surface to which magnesium oxide-containing particles having a magnesium vacancy-impurity center (VIC) are attached. The protecting layer is resistant to plasma ions and has excellent electron emission effects, and thus, a PDP including the protecting layer can be operated at low voltage with high discharge efficiency.

Abstract: A scan electrode driver includes a scan integrated circuit including first and second control signal input terminals, a data input terminal, first and second voltage terminals and a plurality of output terminals, and a logic element. A voltage of the plurality of output terminals may be a voltage of one the plurality of voltage terminals at least based on a level of a control signal transmitted to the first control signal input terminal. The logic element may be adapted to perform an operation on the control signal to generate a second control signal to be applied to the second control signal input terminal. The scan integrated circuit may establish a voltage of the plurality of output terminals to be a voltage of the first or second voltage terminal based on a level of the control signal.

Abstract: A three electrode plasma display device utilizing an auxiliary reset period and, during a sustain period, sustain pulses of variable widths. In the auxiliary reset period, a voltage at the scan electrode is gradually increased from a first voltage to a second voltage, and then gradually decreased from a third voltage to a fourth voltage. In the sustain period, a plurality of sustain pulses are alternately applied to a scan electrode and a sustain electrode. The sustain pulses include a first sustain pulse group and a second sustain pulse group, where the second sustain pulse group includes at least the last sustain pulse in the sustain period. The width of the sustain pulses included in the second sustain pulse group are wider than a width of the sustain pulses included in the first sustain pulse group.

Abstract: A method for fabricating a semiconductor device with a bulb shaped recess gate pattern includes selectively etching a first portion of a substrate to form a first recess; forming a spacer on sidewalls of the first recess; performing an isotropic etching process on a second portion of the substrate beneath the first recess to form a second recess, the second recess being wider and more rounded than the first recess; removing the spacer; and forming a gate pattern having a first portion buried into the first and second recesses and a second portion projecting over the substrate.

Abstract: A protecting layer is formed of a magnesium oxide layer and electron emission promoting material formed on the magnesium oxide layer. The electron emission promoting material may be patterned on the magnesium oxide layer, or may be sprayed and heat-treated on the surface of the magnesium oxide layer. The protecting layer exhibits excellent electron emission characteristics while not being substantially damaged by plasma ions, thereby improving the reliability of a PDP.

Abstract: A method of driving a plasma display device having a first electrode and a second electrode adjacent to one another in a discharge cell, including applying a first waveform at least once to the first electrode, the first waveform including a gradual increase from a first voltage to a second voltage followed by a gradual decrease from a third voltage to a fourth voltage, and applying a second waveform at least once to the first electrode after the first waveform is applied to the first electrode, the second waveform including a gradual increase from a fifth voltage to a sixth voltage followed by a gradual decrease from a seventh voltage to an eighth voltage. The first and second waveforms may be applied to the first electrode after turning on the plasma display device and before a display operation is performed.