Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.

Abstract: Disclosed herein is a method for forming a semiconductor package. The method includes providing a first releasable chip carrier attached to a conductive layer. A circuit layer is formed on a surface of the conductive layer and a dielectric layer is applied over a surface of the circuit layer. A second releasable chip carrier is attached to a surface of the dielectric layer and the first releasable chip carrier is released from the conductive layer via facilitation of a first activating source. The circuitry of the circuit layer is operationally tested.

Abstract: Disclosed herein is a method for forming a semiconductor package. The method includes providing a first releasable chip carrier attached to a conductive layer. A circuit layer is formed on a surface of the conductive layer and a dielectric layer is applied over a surface of the circuit layer. A second releasable chip carrier is attached to a surface of the dielectric layer and the first releasable chip carrier is released from the conductive layer via facilitation of a first activating source. The circuitry of the circuit layer is operationally tested.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method of semiconductor packaging includes providing a plurality of substrate units including at least one good known substrate unit on a first adhesive layer of a first carrier. The method includes applying a first activating source to the first adhesive layer in situ such that the first adhesive layer releases from the at least one good known substrate unit without physical contact by an outside source to the at least one good known substrate unit. The method includes transferring the at least one good known substrate unit onto a second adhesive layer of a second carrier, attaching at least one die to the at least one good known substrate unit, and applying a second activating source to the second adhesive layer such that the second adhesive layer releases from the at least one good known substrate unit.

Abstract: A method of manufacturing a semiconductor package includes mounting and electrically connecting a semiconductor die to a substrate. The semiconductor die and the substrate are encapsulated to form an encapsulation. Via holes are laser-ablated through the encapsulation and conductive material is deposited within the via holes to form vias. A first buildup dielectric layer is formed on the encapsulation. Laser-ablated artifacts are laser-ablated in the first buildup layer. The laser-ablated artifacts in the first buildup layer are filled with a first metal layer to form a first electrically conductive pattern in the first build up layer. The operations of forming a buildup layer, forming laser-ablated artifacts in the buildup layer, and filling the laser-ablated artifacts with an electrically conductive material to form an electrically conductive pattern can be performed any one of a number of times to achieve the desired redistribution.

Abstract: A method for making a semiconductor device includes providing a releasable carrier attached to a conductive layer, patterning a conductive circuit on a surface of the conductive layer, applying an insulative material at least partially covering the conductive circuit, releasing the releasable carrier from the conductive layer, and facilitating the releasing with an activating source. A method of fabricating a releasable carrier includes providing a supporting carrier, attaching a releasable tape to the supporting carrier, providing a first conductive layer and a second conductive layer attached to the first conductive layer, and attaching the first conductive layer to the releasable tape, where the releasable tape is configured to release the supporting carrier from the first conductive layer after being exposed to an activating source.

Abstract: Disclosed herein is a releasable carrier that includes a supporting carrier, a carrier conductive layer, and a releasable tape located between the supporting carrier and the carrier conductive layer. The releasable tape attaches the supporting carrier to the carrier conductive layer. The releasable tape is configured to release the supporting carrier from the carrier conductive layer after being exposed to an activating source. The releasable carrier further includes a thin conductive layer attached to the carrier conductive layer, the thin conductive layer creating a surface configured to receive a conductive circuit. Further disclosed is a method for fabricating the releasable carrier and a method for making a semiconductor device using the releasable carrier.

Abstract: A semiconductor device includes a semiconductor die and a substrate having a first surface and a second surface. The semiconductor die is attached to the second surface. The substrate includes a layer of insulative material and an embedded conductive circuit in the layer of insulative material. The embedded conductive circuit includes an etched layer of a conductive material. The etched layer of the conductive material is located on the first surface of the substrate. The etched layer of the conductive material is made of a first metallic material and the embedded conductive circuit is made of a second metallic material that is different than the first metallic material.

Abstract: A method for making a semiconductor device includes providing a releasable carrier attached to a conductive layer, patterning a conductive circuit on a surface of the conductive layer, applying an insulative material at least partially covering the conductive circuit, releasing the releasable carrier from the conductive layer, and facilitating the releasing with an activating source. A method of fabricating a releasable carrier includes providing a supporting carrier, attaching a releasable tape to the supporting carrier, providing a first conductive layer and a second conductive layer attached to the first conductive layer, and attaching the first conductive layer to the releasable tape, where the releasable tape is configured to release the supporting carrier from the first conductive layer after being exposed to an activating source.

Abstract: Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate having a first surface and a second surface. The semiconductor die is attached to the second surface. The substrate includes a layer of insulative material and at least a portion of an embedded conductive circuit in the layer of insulative material. The substrate includes an etched layer of a conductive material attached to the portion of the conductive circuit, the etched layer of the conductive material located on the first surface of the substrate.

Abstract: Disclosed herein is a semiconductor device that includes a semiconductor die and a substrate including a first surface and a second surface. The substrate includes a conductive circuit and an insulative material over the conductive circuit. The semiconductor die is attached to the second surface. The semiconductor device further includes a metal barrier layer plated onto a functional copper layer etched to form the conductive circuit. The conductive circuit has a thickness of less than or equal to 3 ?m. Further disclosed is a method of making a semiconductor device.

Abstract: Disclosed herein is a method for forming a semiconductor package. The method includes providing a first releasable chip carrier attached to a conductive layer. A circuit layer is formed on a surface of the conductive layer and a dielectric layer is applied over a surface of the circuit layer. A second releasable chip carrier is attached to a surface of the dielectric layer and the first releasable chip carrier is released from the conductive layer via facilitation of a first activating source. The circuitry of the circuit layer is operationally tested.

Abstract: A method of forming an electronic component package includes coupling a first surface of an electronic component to a first surface of a first dielectric strip, the electronic component comprising bond pads on the first surface; forming first via apertures through the first dielectric strip to expose the bond pads; and filling the first via apertures with an electrically conductive material to form first vias electrically coupled to the bond pads. The bond pads are directly connected to the corresponding first vias without the use of a solder and without the need to form a solder wetting layer on the bond pads.