Abstract: A three-dimensional chip stack includes a first chip bonded to a second chip to form a bonded interconnection therebetween. The bonded interconnection includes a first conductive pillar overlying a first substrate of the first chip, a second conductive pillar overlying a second substrate of the second chip, and a joint structure between the first conductive pillar and the second conductive pillar. The joint structure includes a first IMC region adjacent to the first conductive pillar, a second IMC region adjacent to the second conductive pillar, and a metallization layer between the first IMC region and the second IMC region.

Abstract: A method of forming a semiconductor structure includes forming a through-substrate-via (TSV) structure in a substrate. The method includes forming a first etch stop layer over the TSV structure. The method further includes forming a first dielectric layer in contact with the first etch stop layer. The method still further includes forming a second etch stop layer in contact with the first dielectric layer. The method also includes forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer. The method further includes forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure.

Abstract: A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A metal-insulator-metal (MIM) capacitor structure is disposed over the substrate. A dual damascene structure disposed over and electrically coupled with the TSV structure, wherein the dual damascene structure includes a via portion and a trench portion A first dielectric layer is disposed around the via portion of the dual damascene structure. A second dielectric layer disposed around the trench portion of the dual damascene, wherein the second dielectric layer is disposed over the MIM capacitor structure.

Abstract: A transistor structure comprises a patterned N-type transparent oxide semiconductor formed over a substrate as a base, and a patterned p-type organic polymer semiconductor formed on the patterned N-type transparent oxide semiconductor comprising a first portion and a second portion so that the patterned N-type transparent oxide semiconductor and the first portion and the second portion of the patterned p-type organic polymer semiconductor form heterojunctions therebetween respectively, wherein the first portion of the patterned p-type organic polymer semiconductor is used as an emitter, and the second portion of the patterned p-type organic polymer semiconductor is used as a collector.

Abstract: A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.

Abstract: An exemplary driving member and an exemplary array module formed by a plurality of the driving members are disclosed in the invention. The driving member includes a first suspending beam module, a second suspending beam module and a conductive suspending beam module. When a voltage is provided between the first suspending beam module and the second suspending beam module, or the first suspending beam module and the second suspending beam module are provided with two homopolar voltages, when the electric field force is larger than the deforming force threshold of the first suspending beam, the first suspending beam moves to contact with the conductive suspending beam module, so that the first suspending beam has a voltage same with the conductive suspending beam module. When the electric field force is smaller than the deforming force threshold of the first suspending beam, the first suspending beam module rebounds to an original state.

Abstract: A pixel driving circuit, a pixel driving method and a light emitting display device are provided in the present invention. The pixel driving circuit includes first through fifth transistors and a capacitor and is for driving a light emitting diode. The third transistor forms a diode connection to make information of the threshold voltages of both the third transistor and the light emitting diode be stored in the capacitor in a data writing period. In a light emitting period, the second transistor compensates drift variation of the threshold voltages of the third transistor and the light emitting diode according to the information stored in the capacitor to provide a stable driving current for driving the light emitting diode.

Abstract: An electronic paper structure is disclosed, which includes a hard substrate, a flexible substrate, at least one magnetic device for fastening the flexible substrate on the hard substrate temporally, a drive substrate formed on the flexible substrate, an electronic paper display layer formed on the drive substrate, and a protect layer formed on the electronic paper display layer. An electronic paper fabricating method using the same is also disclosed.

Abstract: An organic light emitting display device includes a substrate, a transparent electrode layer, a source/drain layer, an IGZO semiconductor layer, a first insulating layer, a gate layer, a second insulating layer and an organic light emitting diode. The organic light-emitting display device can have a simplified manufacturing process. In addition, the present invention also provides a method for manufacturing the organic light-emitting display device.

Abstract: A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A metal-insulator-metal (MIM) capacitor structure is disposed over the substrate. A dual damascene structure disposed over and electrically coupled with the TSV structure, wherein the dual damascene structure includes a via portion and a trench portion A first dielectric layer is disposed around the via portion of the dual damascene structure. A second dielectric layer disposed around the trench portion of the dual damascene, wherein the second dielectric layer is disposed over the MIM capacitor structure.

Abstract: A method of forming a semiconductor structure includes forming a through-substrate-via (TSV) structure in a substrate. The method includes forming a first etch stop layer over the TSV structure. The method further includes forming a first dielectric layer in contact with the first etch stop layer. The method still further includes forming a second etch stop layer in contact with the first dielectric layer. The method also includes forming a metal-insulator-metal (MIM) capacitor structure in contact with the second etch stop layer. The method further includes forming a first conductive structure through the first etch stop layer and the first dielectric layer, wherein the first conductive structure is electrically coupled with the TSV structure and the TSV structure is substantially wider than the first conductive structure.

Abstract: A micro electro-mechanical system (MEMS) switch includes an active device, an immovable metal layer and a movable metal layer is provided. The immovable metal layer is disposed on the active device and the movable metal layer is disposed above the immovable metal layer. Accordingly, an insulating cavity is formed between the immovable metal layer and the movable metal layer. Further, the active device is capable of driving the movable metal layer. Compare to thin film transistor, since the operation performance of the MEMS switches would not affected by carrier mobility and on-off current ratio, display performance of the display device can be easily improved.

Abstract: In order to protect IMD layers, particularly low-k dielectrics, a protection film is formed on the sidewall of an opening in the IMD layers prior to etching a trench in the underlying silicon substrate. After etching the trench, such as through a TMAH wet etch, at least part of the protection film can be removed. The protection film can be removed in an anisotropic etch process such that a portion of the protection film remains as a sidewall spacer on the sidewall of the opening within the IMD layers.

Abstract: A semiconductor structure includes a through-substrate-via (TSV) structure disposed in a substrate. A first etch stop layer is disposed over the TSV structure. A first dielectric layer is disposed in contact with the first etch stop layer. A first conductive structure is disposed through the first etch stop layer and the first dielectric layer. The first conductive structure is electrically coupled with the TSV structure. The TSV structure is substantially wider than the first conductive structure. A second etch stop layer is disposed in contact with the first dielectric layer. A metal-insulator-metal (MIM) capacitor structure is disposed in contact with the second etch stop layer.

Abstract: An integrated circuit includes a substrate and a first metal-insulator-metal (MIM) capacitor disposed over the substrate. The MIM capacitor includes a first metallic capacitor plate disposed over the substrate. At least one first insulator layer is disposed over the first metallic capacitor plate. A second metallic capacitor plate is disposed over the at least one first insulator layer. At least one first dielectric layer is disposed over the substrate. At least a portion of the at least one first dielectric layer is disposed between the first metallic capacitor plate and the at least one first insulator layer.

Abstract: A front light plate includes a transparent substrate, a first electrode layer disposed on the transparent substrate and including first electrodes arranged in parallel, a second electrode layer disposed opposite to the first electrode layer and including second electrodes arranged in parallel, and light emitting components. The light emitting components arranged in array are disposed between the first electrode layer and the second electrode layer and at overlapping positions of the first electrodes and the second electrodes. Each of the light emitting components has a top surface connected to the corresponding first electrode, a bottom surface connected to the corresponding second electrode and a side surface between the top surface and the bottom surface. The side surface is a light emitting surface. The front light plate has high brightness uniformity and high light utility efficiency.

Abstract: A touch-sensitive display panel including a first substrate, a second substrate, a display layer and at least one touch-sensitive device is provided. The second substrate is disposed opposite to the first substrate. The display layer is disposed between the first substrate and the second substrate. The touch-sensitive device is disposed between the first substrate and the second substrate and located beside the display layer. The displaying brightness of the touch-sensitive display panel is not adversely affected by the touch-sensitive device. In addition, the thickness of the touch-sensitive display panel is relative small.

Abstract: An electrothermal transfer device includes a substrate, a plurality of electrothermal components and a heating circuit. The electrothermal components are disposed on a surface of the substrate and arranged in a pattern. The heating circuit is electrically connected to the electrothermal components. In an electrothermal transfer method, at first, a transfer substrate is disposed on a workpiece substrate. Then, the electrothermal transfer device is disposed on the transfer substrate so that the electrothermal components contact with the transfer substrate. Thereafter, the heating circuit is used to heat the electrothermal transfer components so that the transfer substrate is heated to be transferred to the workpiece substrate. The electrothermal transfer device and the electrothermal transfer method can reduce cost.

Abstract: A sensing structure and a displayer comprising the same are provided. The displayer further comprises a substrate and a panel disposed opposite to the substrate. The sensing structure comprises a plurality of sensing elements, a conductive assembly, and a process module. Each of the sensing elements has a position data corresponding to the panel. Every several adjacent ones of the sensing elements form a plurality of sensing areas. The process module is electrically connected to the sensing elements via the conductive assembly. Each of the sensing elements generates a touch voltage in response to a touch on the sensing areas. The process module receives the touch voltages, and calculates a touch position of the one touch corresponding to the panel according to the position data and the touch voltages.

Abstract: A photo sensing unit used in a photo sensor includes a photo sensing transistor, a storage capacitor, and a switching transistor. The photo sensing transistor receives a light signal for inducing a photo current correspondingly, and a source and a gate thereof are respectively coupled to the first signal source and the second signal source. The storage capacitor stores electrical charges induced by the light signal, one terminal thereof is coupled to drain of the photo sensing transistor, and another terminal thereof is coupled to a low voltage. The switching transistor is controlled by the second signal source for outputting a readout signal from the storage capacitor to the signal readout line. The threshold voltage of the photo transistor is higher than that of the switching transistor.