Abstract: A micro electro-mechanical system (MEMS) switch includes an active device, an immovable metal layer and a movable metal layer is provided. The immovable metal layer is disposed on the active device and the movable metal layer is disposed above the immovable metal layer. Accordingly, an insulating cavity is formed between the immovable metal layer and the movable metal layer. Further, the active device is capable of driving the movable metal layer. Compare to thin film transistor, since the operation performance of the MEMS switches would not affected by carrier mobility and on-off current ratio, display performance of the display device can be easily improved.

Abstract: Present invention relates to an electronic reading apparatus with data security and anti-theft functions. The electronic reader apparatus has a code input unit for receiving a security code, and a code determining unit for determining an authenticity of the security code. When no security code, no authentic security code or even no operational signal has been received during the predetermined periods of time, a central control unit may stop a power supply unit from outputting power in order to turn off the electronic reader apparatus and clear the image shown on a display unit. As such, a content of sensitive or confidential data stored in the electronic reading apparatus may not be intruded.

Abstract: A thin film transistor array substrate includes a substrate, a gate layer, a gate insulating layer, a source/drain layer, a patterned protective layer, an oxide semiconductor layer, a resin layer and a pixel electrode. The gate layer is disposed on the substrate. The gate insulating layer is disposed on the gate layer and the substrate. The source/drain layer is disposed on the gate insulating layer. The patterned protective layer is disposed on the source/drain layer and exposes a portion of the source/drain layer. The oxide semiconductor layer is disposed on the patterned protective layer and electrically connected to the source/drain layer. The resin layer is disposed on the oxide semiconductor layer and covers the oxide semiconductor layer. The pixel electrode is disposed on the resin layer and connects to the source/drain layer. The present invention also provides a method for making the thin film transistor array substrate. The thin film transistor array substrate can prevent leakage current.

Abstract: An electronic reading apparatus includes a cover, a writing portion and a displaying portion. The cover defines a first side and a second side. The writing portion is arranged at the first side of the cover, and includes a touch input device and a writing unit. The writing unit is configured to create a content of a note by receiving inputs for the content of the note, and the touch input device detects a touch signal for generating an electronic note file in accordance with the touch signal. The displaying portion is arranged at the second side of the cover; and includes a first display unit for displaying a first content.

Abstract: A display panel is provided. The display panel comprises a first substrate, a second substrate, a display control circuit and a force sensing circuit. The display control circuit is disposed on the first substrate between the first substrate and the second substrate for controlling the display panel to display an image through the second substrate. The force sensing circuit is disposed side by side with the display control circuit on the first substrate between the first substrate and second substrate, wherein the force sensing circuit comprises a plurality of force sensing elements for sensing at least one external force and correspondingly generate a plurality of force signals respectively to transform at least one touch signal corresponding to the at least one external force.

Abstract: An oxide thin film transistor includes a substrate, a gate layer, an oxide film and a gate insulating layer. The gate layer is disposed on the substrate. The oxide film is disposed on the substrate, and has a source region, a drain region and a channel region. The channel region is located between the source region and the drain region and corresponds to the gate layer. The electric conductivity of the source region and the drain region is greater than that of the channel region. The gate insulating layer is disposed on the substrate and located between the gate layer and the oxide film.

Abstract: A micro electro-mechanical system (MEMS) array substrate includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of MEMS switches and a plurality of pixel electrodes. The first signal lines are disposed on the substrate in parallel with one another as well as the second signal lines. The second signal lines intersect with the first signal lines, such that a plurality of pixel regions is defined on the substrate. Each MEMS switch is located at corresponding one of the intersections between the first signal lines and the second signal lines. Each pixel electrode is configured in corresponding one of the pixel regions and electrically connected with the corresponding MEMS switch Compare to thin film transistor, since the operation performance of the MEMS switches would not affected by carrier mobility and on-off current ratio, display performance of the display device can be easily improved.

Abstract: The present invention discloses pixel structures and fabrication methods thereof. The pixel includes a thin film transistor forming at a thin film transistor region and a storage capacitor forming at a pixel electrode region. The method includes: forming a gate conduction layer on a substrate; forming a gate insulation layer on the gate conduction layer; forming a source conduction layer and a drain conduction layer on the gate insulation layer, in which the drain conduction layer has an extension section extending to the pixel electrode region; forming a channel layer on the source conduction layer and the drain conduction layer; and forming a protection layer on the channel layer. The extension section and an electrode layer serve as the upper and lower electrode of the storage capacitor, respectively. Wherein the gate conduction layer, the source conduction layer, the drain conduction layer, and the channel layer are made of metallic oxides.

Abstract: An exemplary driving member and an exemplary array module formed by a plurality of the driving members are disclosed in the invention. The driving member includes a first suspending beam module, a second suspending beam module and a conductive suspending beam module. When a voltage is provided between the first suspending beam module and the second suspending beam module, or the first suspending beam module and the second suspending beam module are provided with two homopolar voltages, when the electric field force is larger than the deforming force threshold of the first suspending beam, the first suspending beam moves to contact with the conductive suspending beam module, so that the first suspending beam has a voltage same with the conductive suspending beam module. When the electric field force is smaller than the deforming force threshold of the first suspending beam, the first suspending beam module rebounds to an original state.

Abstract: A front light plate includes a transparent substrate, a first electrode layer disposed on the transparent substrate and including first electrodes arranged in parallel, a second electrode layer disposed opposite to the first electrode layer and including second electrodes arranged in parallel, and light emitting components. The light emitting components arranged in array are disposed between the first electrode layer and the second electrode layer and at overlapping positions of the first electrodes and the second electrodes. Each of the light emitting components has a top surface connected to the corresponding first electrode, a bottom surface connected to the corresponding second electrode and a side surface between the top surface and the bottom surface. The side surface is a light emitting surface. The front light plate has high brightness uniformity and high light utility efficiency.

Abstract: A micro electromechanical system (MEMS) array substrate includes a substrate, a plurality of first signal lines, a plurality of second signal lines, a plurality of MEMS switches and a plurality of pixel electrodes. The first signal lines are disposed on the substrate in parallel with one another as well as the second signal lines. The second signal lines intersect with the first signal lines, such that a plurality of pixel regions is defined on the substrate. Each MEMS switch is located at corresponding one of the intersections between the first signal lines and the second signal lines. Each pixel electrode is configured in corresponding one of the pixel regions and electrically connected with the corresponding MEMS switch Compare to thin film transistor, since the operation performance of the MEMS switches would not affected by carrier mobility and on-off current ratio, display performance of the display device can be easily improved.

Abstract: In order to protect IMD layers, particularly low-k dielectrics, a protection film is formed on the sidewall of an opening in the IMD layers prior to etching a trench in the underlying silicon substrate. After etching the trench, such as through a TMAH wet etch, at least part of the protection film can be removed. The protection film can be removed in an anisotropic etch process such that a portion of the protection film remains as a sidewall spacer on the sidewall of the opening within the IMD layers.

Abstract: A wire stretching device for applying a drag force onto a wire wound around an object is provided. The wire stretching device comprises a primary platform, a first sub-platform, a second sub-platform and a driving device. The primary platform comprises a plate, a fixed stick and a track, wherein the fixed stick and the track are disposed on a surface of the plate, and the fixed stick has a first fixing device for fixing a first end of the wire. The object is fixed on a first stage of the first sub-platform, and a second fixing device is disposed on a second stage of the second sub-platform for fixing the second end of the wire. The second sub-platform is moved by the driving device for adjusting the tension of the wire. The first sub-platform is passively moved along the track corresponding to the tension of the wire.

Abstract: A touch-sensitive display panel including a first substrate, a second substrate, a display layer and at least one touch-sensitive device is provided. The second substrate is disposed opposite to the first substrate. The display layer is disposed between the first substrate and the second substrate. The touch-sensitive device is disposed between the first substrate and the second substrate and located beside the display layer. The displaying brightness of the touch-sensitive display panel is not adversely affected by the touch-sensitive device. In addition, the thickness of the touch-sensitive display panel is relative small.

Abstract: A sensing structure and a displayer comprising the same are provided. The displayer further comprises a substrate and a panel disposed opposite to the substrate. The sensing structure comprises a plurality of sensing elements, a conductive assembly, and a process module. Each of the sensing elements has a position data corresponding to the panel. Every several adjacent ones of the sensing elements form a plurality of sensing areas. The process module is electrically connected to the sensing elements via the conductive assembly. Each of the sensing elements generates a touch voltage in response to a touch on the sensing areas. The process module receives the touch voltages, and calculates a touch position of the one touch corresponding to the panel according to the position data and the touch voltages.

Abstract: The present invention provides an etcher for semiconductor manufacturing. The etcher comprises a chamber for accepting a wafer, having an inlet and outlet through which a gas is pumped into and out of the chamber, first and second electrodes generating an electrical field to ionize the gas for reacting with the wafer, and a plate disposed between the inlet and outlet, deflecting the gas flow therebetween.