Patents by Inventor Sung Kun Park

Sung Kun Park has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20210041601
    Abstract: A cover window includes: a polymer film, a first hard coating layer on the polymer film, a first inorganic layer facing the polymer film with the first hard coating layer therebetween, and a second inorganic layer on the polymer film and defining an outer surface of the cover window.
    Type: Application
    Filed: April 13, 2020
    Publication date: February 11, 2021
    Inventors: Hye-Jin OH, Young Sang PARK, In Seok SEO, Sung Guk AN, Hung Kun AHN, Jang Doo LEE
  • Publication number: 20210020676
    Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
    Type: Application
    Filed: October 6, 2020
    Publication date: January 21, 2021
    Inventors: Sung-Kun Park, Hye-Won Mun
  • Patent number: 10833112
    Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
    Type: Grant
    Filed: October 1, 2018
    Date of Patent: November 10, 2020
    Assignee: SK hynix Inc.
    Inventors: Sung-Kun Park, Hye-Won Mun
  • Publication number: 20200339774
    Abstract: A protective window includes a flexible base film and a hard coating layer disposed on the flexible base film. The hard coating layer includes a silicone leveling agent and an inorganic antistatic agent. The coating layer includes an upper area and a lower area disposed between the upper area and the flexible base film, and a density of the inorganic antistatic agent in the lower area is greater than a density of the inorganic antistatic agent in the upper area.
    Type: Application
    Filed: March 4, 2020
    Publication date: October 29, 2020
    Inventors: Young-Sang PARK, Young Moon KIM, Kicheol SONG, Hung Kun AHN, Kyou Jong PARK, Sung Guk AN, Jang Doo LEE, Jeong Chul HO
  • Publication number: 20200317031
    Abstract: Disclosed herein is an air vent device, the air vent device including a garnish including an opening in which an air vent hole is located, a grille unit located between an outer surface of the air vent hole and an inner surface of the garnish, a first wing located at an outer side of the air vent hole in a lateral direction and configured to be pivoted based on one end of the grille unit, a deco part located on an outer surface of the garnish, and a knob configured to control a direction of a wind discharged from the air vent hole, wherein the knob is located to surround a portion of the deco part and configured to be capable of controlling a direction of a wind in a vertical direction by operating the first wing.
    Type: Application
    Filed: April 3, 2020
    Publication date: October 8, 2020
    Inventors: Tae Kun Kim, Young Su Nam, Dong Won Yeon, Ie Seob Park, Sung Kwon Kim
  • Patent number: 10741570
    Abstract: A nonvolatile memory device includes an active region extending in a first direction and including a source region and a drain region that are respectively disposed at both ends of the active region, a gate electrode pattern extending in a second direction and disposed between the source region and the drain region, wherein the second direction extends across the first direction, a gate insulation pattern disposed between the gate electrode pattern and the active region, a source contact plug and a drain contact plug respectively coupled to the source region and the drain region, and a coupling contact plug disposed over the gate electrode pattern and insulated from the gate electrode pattern.
    Type: Grant
    Filed: January 5, 2017
    Date of Patent: August 11, 2020
    Assignee: SK hynix Inc.
    Inventor: Sung Kun Park
  • Publication number: 20200212092
    Abstract: An image sensing device is provided to include a pixel region and a peripheral region located outside of the pixel region. The peripheral region includes logic circuits located to receive a pixel signals from the pixel region and configured to process the pixel signals and a capacitor located adjacent to the logic circuits. The capacitor includes an active region, a recessed structure, and a first junction. The active region includes a first impurity region and a second impurity region formed over the first impurity region. The recessed structure is at least partly disposed in the active region and including a first portion disposed in the active region and including a conductive material and a second portion surrounding the first portion and including an insulation material. The first junction is formed in the active region and spaced apart from the recessed structure by a predetermined distance.
    Type: Application
    Filed: July 12, 2019
    Publication date: July 2, 2020
    Inventors: Pyong Su Kwag, Sung Kun Park
  • Publication number: 20200212088
    Abstract: An image sensing device is provided to include a pixel region including image pixels and a peripheral region located outside of the pixel region. The peripheral region includes logic circuits located to receive the pixel signals from the pixel region and configured to process the pixel signals, and a capacitor located adjacent to the logic circuits. The capacitor includes an active region including a first impurity region and a second impurity region formed over the first impurity region, a recessed structure including a portion formed in the active region, the portion including a conductive layer extending along a direction that the first impurity region and the second impurity region are stacked and an insulation layer formed between the conductive layer and the active region, and a first junction formed in the active region and spaced apart from the recessed structure by a predetermined distance.
    Type: Application
    Filed: July 12, 2019
    Publication date: July 2, 2020
    Inventors: Pyong Su Kwag, Sung Kun Park
  • Publication number: 20200189972
    Abstract: The present invention relates to low-emissivity glass comprising: a glass substrate; a first dielectric layer formed on the glass substrate; a metal layer formed on the first dielectric layer; an absorbent layer formed on the metal layer; a second dielectric layer formed on the absorbent layer; and a coating layer formed on the second dielectric layer and containing Zr, whereby a low-emissivity glass having good and excellent handling and long-term storage properties is provided.
    Type: Application
    Filed: June 19, 2018
    Publication date: June 18, 2020
    Applicant: KCC Corporation
    Inventors: Joon Young PARK, Hyun Min KANG, Jin Yong KIM, Young Hoon OH, Sung Kun YOON, Bo Na YU, Hyoun Joo LEE, Je Hyang LEE, Min Ju KIM
  • Publication number: 20200119082
    Abstract: An image sensor is provided to include an active region which comprises: a floating diffusion region; a transfer transistor gate region; transistor active regions; and a well-tap region. The transfer transistor gate region may have a diagonal bar shape to isolate the floating diffusion region in a first corner of the active region. The well-tap region may be positioned between the transfer transistor gate region and the transistor active regions, and isolate the transfer transistor gate region from the transistor active regions.
    Type: Application
    Filed: July 25, 2019
    Publication date: April 16, 2020
    Inventors: Kyoung-In Lee, Sung-Kun Park, Sun-Ho Oh
  • Patent number: 10608025
    Abstract: An image sensor device includes a photoelectric conversion element configured to receive incident light and generate photocharges in response to the received incident light; a floating diffusion coupled to the photoelectric conversion element to store the photocharges generated by the photoelectric conversion element, the floating diffusion having a first capacitance value; a conductive pattern electrically coupled to the floating diffusion; and a variable electrode located apart from the conductive pattern by a gap, wherein the conductive pattern and the variable electrode form a variable capacitor coupled to the floating diffusion and having a second capacitance value and operable to change an effective capacitance of the floating diffusion in response to a control signal applied to the variable electrode.
    Type: Grant
    Filed: October 16, 2017
    Date of Patent: March 31, 2020
    Assignee: SK hynix Inc.
    Inventors: Sung-Kun Park, Kyoung-In Lee, Kwang Hwangbo
  • Publication number: 20200091212
    Abstract: An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.
    Type: Application
    Filed: July 25, 2019
    Publication date: March 19, 2020
    Inventors: Sung-Kun Park, Sun-Ho Oh, Kyoung-In Lee
  • Patent number: 10410723
    Abstract: A nonvolatile memory (NVM) cell includes a selection transistor configured to have a selection gate terminal coupled to a word line and a source terminal coupled to a source line, a cell transistor configured to have a floating gate electrically isolated, a drain terminal coupled to a bit line and sharing a junction terminal with the selection transistor, a first coupling capacitor disposed in a first connection line coupled between the word line and the floating gate, and a P-N diode and a second coupling capacitor disposed in series in a second connection line coupled between the word line and the floating gate. An anode and a cathode of the P-N diode are coupled to the second coupling capacitor and the word line, respectively. The first and second connection lines are coupled in parallel between the word line and the floating gate.
    Type: Grant
    Filed: June 27, 2017
    Date of Patent: September 10, 2019
    Assignee: SK hynix Inc.
    Inventor: Sung Kun Park
  • Publication number: 20190199951
    Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to t
    Type: Application
    Filed: March 5, 2019
    Publication date: June 27, 2019
    Inventors: Pyong-Su KWAG, Sung-Kun PARK, Dong-Hyun WOO
  • Publication number: 20190165018
    Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.
    Type: Application
    Filed: October 1, 2018
    Publication date: May 30, 2019
    Inventors: Sung-Kun Park, Hye-Won Mun
  • Patent number: 10068937
    Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.
    Type: Grant
    Filed: July 19, 2016
    Date of Patent: September 4, 2018
    Assignee: SK Hynix Inc.
    Inventors: Yun-Hui Yang, Sung-Kun Park, Pyong-Su Kwag, Ho-Ryeong Lee, Young-Jun Kwon
  • Publication number: 20180240826
    Abstract: An image sensor device includes a photoelectric conversion element configured to receive incident light and generate photocharges in response to the received incident light; a floating diffusion coupled to the photoelectric conversion element to store the photocharges generated by the photoelectric conversion element, the floating diffusion having a first capacitance value; a conductive pattern electrically coupled to the floating diffusion; and a variable electrode located apart from the conductive pattern by a gap, wherein the conductive pattern and the variable electrode form a variable capacitor coupled to the floating diffusion and having a second capacitance value and operable to change an effective capacitance of the floating diffusion in response to a control signal applied to the variable electrode.
    Type: Application
    Filed: October 16, 2017
    Publication date: August 23, 2018
    Inventors: Sung-Kun Park, Kyoung-In Lee, Kwang Hwangbo
  • Patent number: 10032852
    Abstract: A single-poly nonvolatile memory cell includes a coupling capacitor, a cell transistor and a selection transistor. The cell transistor has a floating gate, a first source, and a first drain. The floating gate is coupled to an array control gate/source line through the coupling capacitor. The first source is coupled to the array control gate/source line. The selection transistor has a selection gate, a second source, and a second drain. The selection gate is coupled to a word line. The second source is coupled to the first drain. The second drain is coupled to a bit line.
    Type: Grant
    Filed: July 15, 2016
    Date of Patent: July 24, 2018
    Assignee: SK Hynix Inc.
    Inventors: Kwang Il Choi, Sung Kun Park, Nam Yoon Kim
  • Patent number: 10026742
    Abstract: A nonvolatile memory device includes an active region extending in a first direction, a first single-layered gate intersecting the active region and extending in a second direction, a second single-layered gate intersecting the active region and extending in the second direction, and a selection gate intersecting the active region. The selection gate includes a first selection gate main line and a second selection gate main line that intersect the active region to be parallel with the first and second single-layered gates, a selection gate interconnection line that connects a first end of the first selection gate main line to a first end of the second selection gate main line, and a selection gate extension that extends from a portion of the selection gate interconnection line to be disposed between first ends of the first and second single-layered gates.
    Type: Grant
    Filed: September 14, 2016
    Date of Patent: July 17, 2018
    Assignee: SK Hynix Inc.
    Inventors: Jung Hoon Kim, Sung Kun Park, Nam Yoon Kim
  • Patent number: 10008526
    Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.
    Type: Grant
    Filed: August 16, 2016
    Date of Patent: June 26, 2018
    Assignee: SK Hynix Inc.
    Inventors: Sung-Kun Park, Yun-Hui Yang, Pyong-Su Kwag, Dong-Hyun Woo, Young-Jun Kwon, Min-Ki Na, Cha-Young Lee, Ho-Ryeong Lee