Abstract: An image sensor device includes a photoelectric conversion element configured to receive incident light and generate photocharges in response to the received incident light; a floating diffusion coupled to the photoelectric conversion element to store the photocharges generated by the photoelectric conversion element, the floating diffusion having a first capacitance value; a conductive pattern electrically coupled to the floating diffusion; and a variable electrode located apart from the conductive pattern by a gap, wherein the conductive pattern and the variable electrode form a variable capacitor coupled to the floating diffusion and having a second capacitance value and operable to change an effective capacitance of the floating diffusion in response to a control signal applied to the variable electrode.

Abstract: An image sensor includes a first active region including a first floating diffusion region, a first transistor active region, and a first isolation structure for electrically isolating the first floating diffusion region from the first transistor active region, wherein the first isolation structure comprises a first P-type doped region disposed on one corner of the first active region and a second P-type doped region disposed in a center of the first active region, the first P-typed doped region and the second P-type doped region being electrically coupled to each other.

Abstract: A nonvolatile memory (NVM) cell includes a selection transistor configured to have a selection gate terminal coupled to a word line and a source terminal coupled to a source line, a cell transistor configured to have a floating gate electrically isolated, a drain terminal coupled to a bit line and sharing a junction terminal with the selection transistor, a first coupling capacitor disposed in a first connection line coupled between the word line and the floating gate, and a P-N diode and a second coupling capacitor disposed in series in a second connection line coupled between the word line and the floating gate. An anode and a cathode of the P-N diode are coupled to the second coupling capacitor and the word line, respectively. The first and second connection lines are coupled in parallel between the word line and the floating gate.

Abstract: An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to t

Abstract: An image sensor includes a first transfer gate formed over a substrate, and including a first projection; a second transfer gate formed over the substrate, neighboring the first transfer gate, and including a second projection; and a floating diffusion formed in the substrate, and partially overlapping with the first transfer gate and the second transfer gate, wherein the first projection and the second projection face each other.

Abstract: This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

Abstract: An image sensor device includes a photoelectric conversion element configured to receive incident light and generate photocharges in response to the received incident light; a floating diffusion coupled to the photoelectric conversion element to store the photocharges generated by the photoelectric conversion element, the floating diffusion having a first capacitance value; a conductive pattern electrically coupled to the floating diffusion; and a variable electrode located apart from the conductive pattern by a gap, wherein the conductive pattern and the variable electrode form a variable capacitor coupled to the floating diffusion and having a second capacitance value and operable to change an effective capacitance of the floating diffusion in response to a control signal applied to the variable electrode.

Abstract: A single-poly nonvolatile memory cell includes a coupling capacitor, a cell transistor and a selection transistor. The cell transistor has a floating gate, a first source, and a first drain. The floating gate is coupled to an array control gate/source line through the coupling capacitor. The first source is coupled to the array control gate/source line. The selection transistor has a selection gate, a second source, and a second drain. The selection gate is coupled to a word line. The second source is coupled to the first drain. The second drain is coupled to a bit line.

Abstract: A nonvolatile memory device includes an active region extending in a first direction, a first single-layered gate intersecting the active region and extending in a second direction, a second single-layered gate intersecting the active region and extending in the second direction, and a selection gate intersecting the active region. The selection gate includes a first selection gate main line and a second selection gate main line that intersect the active region to be parallel with the first and second single-layered gates, a selection gate interconnection line that connects a first end of the first selection gate main line to a first end of the second selection gate main line, and a selection gate extension that extends from a portion of the selection gate interconnection line to be disposed between first ends of the first and second single-layered gates.

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

Abstract: An image sensing device includes: a floating diffusion node; an initialization block suitable for initializing the floating diffusion node with a first voltage, based on an initialization control signal; a boosting block suitable for boosting the floating diffusion node with a second voltage, based on a boost control signal; a photodiode suitable for generating a photocharge based on incident light; a transmission block suitable for transmitting the photocharge to the floating diffusion node based on a transmission control signal; and a selection block suitable for generating a pixel signal corresponding to a voltage loaded on the floating diffusion node based on a selection control signal.

Abstract: An image sensor includes a substrate including a photoelectric conversion element; a transfer gate formed over the photoelectric conversion element; and a channel layer controlled by the transfer gate, wherein the channel layer includes a first region which is in contacts with the photoelectric conversion element and a second region which is separated from the photoelectric conversion element, and the first region and the second region have different crystalline states from each other.

Abstract: An image sensor is described. The image sensor includes a photodiode that is formed in a substrate, a floating diffusion region that vertically overlaps with a first portion of the photodiode, a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape, and a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.

Abstract: An image sensor includes a photoelectric conversion element including a first impurity region and a second impurity region, wherein the first impurity region contacts a first surface of a substrate, wherein the second impurity region has conductivity complementary to the first impurity region and is formed in the substrate and below the first impurity region; a pillar formed over the photoelectric conversion element; a transfer gate formed over the photoelectric conversion element to surround the pillar; and a channel layer formed between the transfer gate and the pillar and contacting the photoelectric conversion element, wherein the channel layer contacts the first impurity region and has the same conductivity as the second impurity region.

Abstract: An image sensor is described. The image sensor includes a photodiode that is formed in a substrate, a floating diffusion region that vertically overlaps with a first portion of the photodiode, a shallow trench isolation (STI) region that vertically overlaps with a second portion of the photodiode and has an elbow shape, and a transfer gate that is adjacent to at least two sides of the photodiode and has an elbow shape.

Abstract: A lateral double diffused MOS transistor including a substrate, a source region and a drain region disposed in the substrate, a first contact and a second contact connected to the source region and the drain region, respectively, a gate insulation layer and a gate electrode on the substrate, a first field plate extending from the gate electrode toward the drain region, a coupling gate disposed between the second contact and the first field plate on the substrate, the coupling gate having a coupling voltage by coupling operation with the second contact, and a second field plate disposed between the coupling gate and the first field plate on the substrate, the second field plate being electrically connected to the second field plate.

Abstract: A high voltage integrated device includes a source region and a drain region disposed in a semiconductor layer and spaced apart from each other, a drift region disposed in the semiconductor layer and surrounding the drain region, a channel region defined in the semiconductor layer and between the source region and the drift region, a trench insulation field plate disposed in the drift region, a recessed region provided in the trench isolation field plate, a metal field plate disposed over the trench insulation field plate, and filling the recessed region, a gate insulation layer provided over the channel region and extending over the drift region and over the trench insulation field plate, and a gate electrode disposed over the gate insulation layer.

Abstract: A nonvolatile memory device includes a substrate including a device isolation layer defining an active region, a floating gate and a selection gate arranged side by side at intervals of a first gap over the substrate, a coupling plate formed in the device isolation layer and overlapped with the floating gate, and a contact plug suitable for electrically coupling the coupling plate and the selection gate.

Abstract: A method for fabricating an image sensor in accordance with an embodiment of the inventive concepts may include forming first and second photodiodes within a substrate, forming first and second gate electrodes over the substrate, the first gate electrode vertically partially overlapping the first photodiode and the second gate electrode vertically partially overlapping the second photodiode, forming an impurity injection region comprising first and second type impurities between the first and the second gate electrodes, and performing an annealing process to form a floating diffusion region comprising the first type impurities and a channel region comprising the second type impurities. The channel region surrounds lateral surfaces and a bottom surface of the floating diffusion region.

Abstract: An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.