Abstract: Provided are a composition for a photo-reactive organic polymeric gate insulating layer and an organic thin film transistor using the same. The composition for the photo-reactive organic polymeric gate insulating layer comprises poly (vinyl) phenol and a photo-reactive material, and the organic thin film transistor has a photo-reactive organic polymeric gate insulating layer formed of the composition. The composition for the photo-reactive organic polymeric gate insulating layer can add the photo patterning characteristics to an organic polymer and can form the layer with the enhanced electrical characteristics.

Abstract: Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.

Abstract: Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Abstract: Provided are a nonvolatile memory device and a method of fabricating the same, in which a phase-change layer is formed using a solid-state reaction to reduce a programmable volume, thereby lessening power consumption. The device includes a first reactant layer, a second reactant layer formed on the first reactant layer, and a phase-change layer formed between the first and second reactant layers due to a solid-state reaction between a material forming the first reactant layer and a material forming the second reactant layer. The phase-change memory device consumes low power and operates at high speed.

Abstract: Provided is a display panel comprised of a white color organic luminescent element and a color filter for full color implementation, wherein a substrate in which an organic luminescent element is formed and a color filter are assembled and fixed to face each other with an adhesive pattern therebetween, and liquid oil is filled between the color filter and the substrate inside of the adhesive pattern so as to block external moisture or oxygen, so that deterioration of luminous characteristics due to the external moisture or oxygen may be prevented by encapsulating the organic luminescent element and the color filter with the liquid oil, which leads to enhance reliability and stability of the element, and also allows the encapsulation process to be performed with relatively simple steps and low cost.

Abstract: Provided are a composition for thermosetting organic polymeric gate insulating layer and an organic thin film transistor using the same. The composition for thermosetting organic polymeric gate insulating layer contains a thermosetting material in polyvinyl phenol as an organic polymeric gate insulating layer material, to improve a chemical resistance and an insulating property, and an organic thin film transistor includes a thermosetting organic polymeric gate insulating layer formed of the composition. The composition for thermosetting organic polymeric gate insulating layer endows an organic polymer with a thermosetting property, thereby being capable of improving the chemical resistance and the insulating property as well as of forming a layer having a device property improved.

Abstract: Provided are a phase-change nonvolatile memory device and a manufacturing method thereof. The device includes: a substrate; and a stack structure disposed on the substrate and including a phase-change material layer. The phase-change material layer is formed of an alloy of antimony (Sb) and zinc (Zn), so that the phase-change memory device can stably operate at high speed and reduce power consumption.

Abstract: A method of a display apparatus managing a plurality of virtual workspaces of including generating a first data structure as a reference of at least a window; generating a second data structure as a reference of windows respectively linked to the virtual workspaces on the basis of the first data structure; generating a third data structure as a reference of a shared window linked to all of the virtual workspaces; selecting one of the plurality of virtual workspaces; and displaying the shared window and/or the window linked to the selected virtual workspace on the basis of the first data structure, the second data structure, and the third data structure.

Abstract: A method of controlling a computer system including a remote controller having a plurality of selection buttons and producing different remote signals according to selection of a user, and a system controller controlling the system in response to the remote signal produced by the remote controller. The method includes setting up a mouse function according to the remote signals corresponding to the selection buttons of the remote controller; receiving the remote signals from the remote controller; determining whether the mode of the remote controller is selected for a mouse mode; and changing the received remote signal into a mouse message for performing the preset mouse function and providing the mouse message to the system controller, when it is determined that the remote controller is employed in the mouse mode.

Abstract: Provided are a phase-change memory device using a phase-change material having a low melting point and a high crystallization speed, and a method of fabricating the same. The phase-change memory device includes an antimony (Sb)-selenium (Se) chalcogenide SbxSe100-x phase-change material layer contacting a heat-generating electrode layer exposed through a pore and filling the pore. Due to the use of SbxSe100-x in the phase-change material layer, a higher-speed, lower-power consumption phase-change memory device than a GST memory device can be manufactured.

Abstract: Provided are an apparatus and method for writing data to a phase-change random access memory (PRAM) by using writing power calculation and data inversion functions, and more particularly, an apparatus and method for writing data which can minimize power consumption by calculating the power consumed while input original data or inverted data is written to a PRAM and storing the data consuming less power. A PRAM consumes a significant amount of power in order to store data in a memory cell since a large electric current is required to flow for a long period of time.

Abstract: Provided is a phase change memory device including: a phase change memory unit comprising a phase change layer pattern; a laser beam focusing unit locally focusing a laser beam on the phase change layer pattern of the phase change memory unit; and a semiconductor laser unit generating and emitting the laser beam towards the laser beam focusing unit. Thus set or reset operations in the phase change memory device uses laser beams locally applied, thereby reducing the consumption power and preventing destruction or change in information stored in neighboring cell during the operations of unit cell.

Abstract: Provided is a method and apparatus for managing the power of a portable computer system, in which a convenient user interface is provided. The method includes calculating a range of a desired time-of-use based on power consumption of the portable computer system and a remaining battery capacity at a minimum power level of the portable computer system, providing the calculated range of the desired time-of-use and a desired time input box that allows a user to input the desired time-of-use, inputting the desired time-of-use through the desired time input box, and resetting the power level of the portable computer system according to the input desired time-of-use.

Abstract: Provided are a phase-change memory device and a method of fabricating the same. The phase-change memory device includes a transistor disposed on a semiconductor substrate and including a gate electrode and first and second impurity regions disposed on both sides of the gate electrode; a bit line electrically connected to the first impurity region; and a phase-change resistor electrically connected to the second impurity region, wherein the phase-change resistor includes: a lower electrode formed of a doped SiGe layer; a phase-change layer contacting the lower electrode; and an upper electrode connected to the phase-change layer. The lower electrode is formed of the doped SiGe layer, which has a high resistivity and a low thermal conductivity, thereby reducing a reset current and the power consumption of the entire phase-change memory device.

Abstract: Provided are a Phase-change Random Access Memory (PRAM) device and a method of manufacturing the same. In particular, a PRAM device including a heating layer, wherein the heating layer comprises first and second heating layers having different physical properties from each other and a method of manufacturing the same are provided. Since the PRAM device according to the present invention includes a heating layer having optimal heating characteristics, a PRAM device having high reliability and excellent operating characteristics can be manufactured.

Abstract: Provided is an insulating layer in which an inorganic material is added to an organic polymer to thereby improve the insulating properties, an organic thin film transistor using the insulating layer, and a method of fabricating the organic thin film transistor. An insulating layer for an organic thin film transistor including a vinyl polymer and an inorganic material is provided. Here, a weight ratio of the vinyl polymer to the inorganic material may be in the range of 1:0.0001 to 1:0.5. Accordingly, it is possible to fabricate a thin film at low temperature and, further, to fabricate an insulating layer having a high-dielectric constant, not affecting other layers formed in the previous processes during the formation of the insulating layer.

Abstract: An apparatus and method for managing the layout of a window is provided. The apparatus includes a display unit that displays the window on a screen; the screen is divided into a plurality of display areas; a pointer-position-checking unit that checks the coordinate position of a pointer moved by a user and determines the one display area corresponding to the position of the checked pointer; and a window-size-adjusting unit that moves the window to the one display area where the pointer is positioned and adjusts the size of the window in proportion to the size of the one display area.

Abstract: A multibit phase change memory device structured such that a plurality of individual phase change memory devices are aligned in a plan area or vertically, and a method of driving the same are provided. The multibit phase change memory device includes a phase change material layer having a plurality of contact portions being in contact with a heating electrode, and having a plurality of active regions, each active region forming a unit phase change memory device. The phase change material layer may be composed of one material layer in which the plurality of active regions are aligned in plural arrays. Alternatively, the phase change material layer may be composed of a plurality of phase change material layers in which one or plural active regions are respectively aligned in one array. The plurality of phase change material layers may be disposed in a same level of a plan area, or the plurality of phase change material layers may be respectively disposed on different plan areas in a same vertical line.

Abstract: A method and apparatus for reducing power consumption in a display area of an electronic device such as a portable computer are provided. Such a method includes: (a) activating a mode of setting the display area to a white background screen using a first input command of a user; and (b) locating the white background screen over all windows, except for a current task window being displayed in part of the display area. Additionally, the apparatus for reducing power consumption in a display area includes an input unit receiving a first input command from a user; a mode activation unit for activating a mode of setting the display area to a white background screen according to a first input command from a user; and a location setting unit for locating the white background screen over all windows, except for a current task window being displayed in part of the display area.

Abstract: Provided are a low temperature-cured polymer gate insulation layer and an organic thin film transistor having the same. The gate insulation layer includes an acrylate-based compound, an anhydride-based compound, and an epoxy-based compound each by 0.1 weight % or more.