Abstract: A substrate processing apparatus includes: a conveyor belt configured to have an outer surface on which a bottom surface of a substrate is seated; and a polishing head unit configured to face an upper surface of the substrate, wherein the polishing head unit includes: a polishing head connected to a driver; a polishing pad configured to face the polishing head; a polishing pad fixing ring disposed between the polishing head and the polishing pad; and a temperature sensor configured to overlap the polishing pad fixing ring and to be spaced apart from the polishing pad fixing ring.

Abstract: The present invention relates to: an M3 mutant peptide; a composition for alleviating, inhibiting, preventing or treating myopathy, obesity or diabetes, comprising same as an active ingredient; a method for alleviating, inhibiting, preventing or treating myopathy, obesity or diabetes by using the M3 mutant peptide; and uses of the M3 mutant peptide for alleviating, inhibiting, preventing or treating myopathy, obesity or diabetes.

Abstract: The present disclosure relates to an exendin-4 analog PEGylated with polyethylene glycol or a derivative thereof, a preparation method, and a pharmaceutical composition for prevention or treatment of diabetes containing the same as an active ingredient. According to the present invention, the yield of an exendin-4 analog can be increased via the selective PEGylation by using exendin-4 in which a cysteine is introduced into #40 site of the C-terminal, and treatment effect of medications can be increased, so that the exendin-4 analog can be usefully applied as a composition for prevention or treatment of diseases caused by insulin hypersecretion.

Abstract: The present invention provides a composition for preventing, improving or treating periodontal diseases comprising extract of mangosteen. The composition of the present invention has excellent anti-bacterial and anti-inflammatory effects against bacteria inducing periodontal diseases as comprising extract of mangosteen, or alpha-mangosteen or gamma-mangosteen derived from thereof, and thereby it can be widely used for medicines and foods for preventing, improving or treating periodontal diseases.

Abstract: The present invention provides a composition for preventing, improving or treating periodontal diseases comprising extract of mangosteen. The composition of the present invention has excellent anti-bacterial and anti-inflammatory effects against bacteria inducing periodontal diseases as comprising extract of mangosteen, or alpha-mangosteen or gamma-mangosteen derived from thereof, and thereby it can be widely used for medicines and foods for preventing, improving or treating periodontal diseases.

Abstract: The present disclosure relates to an exendin-4 analogue PEGylated with polyethylene glycol or a derivative thereof, a preparation method, and a pharmaceutical composition for prevention or treatment of diabetes containing the same as an active ingredient. According to the present invention, the yield of an exendin-4 analogue can be increased via the selective PEGylation by using exendin-4 in which a cysteine is introduced into #40 site of the C-terminal, and treatment effect of medications can be increased, so that the exendin-analogue can be usefully applied as a composition for prevention or treatment of diseases caused by insulin hypersecretion.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, forming a plurality of second hard mask patterns filling the plurality of trenches, forming a plurality of first opening units in the plurality of second hard mask patterns, forming a plurality of second opening units in the plurality of first hard mask patterns and forming a plurality of patterns using the plurality of first opening units and the plurality of second opening units, which are transferred by etching the target layer.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: Disclosed herein are an N-terminal modified PEG-TRAIL conjugate and a preparation method and use thereof. The PEG-TAIL conjugate has pharmaceutical activity identical or similar to that of native TRAIL (TNF-related apoptosis-inducing ligand) with extended in vivo half-life and enhanced stability. Compared to native TRAIL, the PEG-TAIL conjugate exhibits high solubility and solution stability, with highly improved pharmacokinetic profiles. Thus, the PEG-TAIL conjugate may be very useful for preventing and treating proliferative diseases and autoimmune diseases.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: A method for fabricating a semiconductor device includes forming a plurality of first hard mask patterns separated by a plurality of trenches on a target layer, forming a plurality of second hard mask patterns filling the plurality of trenches, forming a plurality of first opening units in the plurality of second hard mask patterns, forming a plurality of second opening units in the plurality of first hard mask patterns and forming a plurality of patterns using the plurality of first opening units and the plurality of second opening units, which are transferred by etching the target layer.

Abstract: A semiconductor device includes a semiconductor substrate having an etch target layer provided on the surface thereof, and a hard mask layer formed over the etch target layer and including silicon, wherein the hard mask layer includes a dual structure including a first area and a second area having a larger etch rate than the first area, in order to increase an etching selectivity of the hard mask layer.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: A semiconductor device that may prevent an unexposed substrate and generation of bowing profile during a process for forming an open region having a high aspect ratio, and a method for fabricating the semiconductor device. The semiconductor device includes a first material layer formed over a substrate, an open region formed in the first material layer that exposes the first material layer, a second material layer formed on sidewalls of the open region, wherein the second material layer is a compound material including an element of the first material layer, and a conductive layer formed inside the open region.

Abstract: A semiconductor device includes a semiconductor substrate having an etch target layer provided on the surface thereof, and a hard mask layer formed over the etch target layer and including silicon, wherein the hard mask layer includes a dual structure including a first area and a second area having a larger etch rate than the first area, in order to increase an etching selectivity of the hard mask layer.

Abstract: A method for fabricating a semiconductor device includes forming an etching target layer over a substrate including a first region and a second region; forming a hard mask layer over the etching target layer; forming a first etch mask over the hard mask layer, wherein the first etch mask includes a plurality of line patterns and a sacrificial spacer layer formed over the line patterns; forming a second etch mask over the first etch mask, wherein the second etch mask includes a mesh type pattern and a blocking pattern covering the second region; removing the sacrificial spacer layer; forming hard mask layer patterns having a plurality of holes by etching the hard mask layer using the second etch mask and the first etch mask; and forming a plurality of hole patterns in the first region by etching the etching target layer using the hard mask layer patterns.

Abstract: The present disclosure relates to an exendin-4 analogue PEGylated with polyethylene glycol or a derivative thereof, a preparation method, and a pharmaceutical composition for prevention or treatment of diabetes containing the same as an active ingredient. According to the present invention, the yield of an exendin-4 analogue can be increased via the selective PEGylation by using exendin-4 in which a cysteine is introduced into #40 site of the C-terminal, and treatment effect of medications can be increased, so that the exendin-4 analogue can be usefully applied as a composition for prevention or treatment of diseases caused by insulin hypersecretion.

Abstract: A semiconductor device that may prevent an unexposed substrate and generation of bowing profile during a process for forming an open region having a high aspect ratio, and a method for fabricating the semiconductor device. The semiconductor device includes a first material layer formed over a substrate, an open region formed in the first material layer that exposes the first material layer, a second material layer formed on sidewalls of the open region, wherein the second material layer is a compound material including an element of the first material layer, and a conductive layer formed inside the open region.

Abstract: A method is used in forming a fine pattern in a semiconductor device. The method includes forming an etch target layer; forming a photoresist pattern over the etch target layer; forming a polymer pattern including silicon-oxygen (Si—O) bonds on sidewalls of the photoresist pattern; removing the photoresist pattern; and etching the etch target layer using the polymer pattern as an etch mask.

Abstract: A method for fabricating a semiconductor device includes sequentially forming an etch stop layer and a mold layer over a substrate, forming an open region by selectively etching the mold layer until the etch stop layer is exposed, transforming a surface of the mold layer into an insulation layer by performing a surface treatment, and forming a conductive layer inside the open region.