Patents by Inventor Suvi P. Haukka

Suvi P. Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20200051829
    Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.
    Type: Application
    Filed: October 21, 2019
    Publication date: February 13, 2020
    Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
  • Patent number: 10553440
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD. Nickel thin films can be used directly in silicidation and germanidation processes.
    Type: Grant
    Filed: June 20, 2016
    Date of Patent: February 4, 2020
    Assignee: ASM International N.V.
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Patent number: 10553424
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Grant
    Filed: January 22, 2019
    Date of Patent: February 4, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20200010953
    Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
    Type: Application
    Filed: September 18, 2019
    Publication date: January 9, 2020
    Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
  • Publication number: 20190371594
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: August 14, 2019
    Publication date: December 5, 2019
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Publication number: 20190333761
    Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.
    Type: Application
    Filed: July 8, 2019
    Publication date: October 31, 2019
    Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
  • Patent number: 10456808
    Abstract: Methods are provided for selectively depositing a material on a first surface of a substrate relative to a second, different surface of the substrate. The selectively deposited material can be, for example, a metal, metal oxide, or dielectric material.
    Type: Grant
    Filed: January 23, 2018
    Date of Patent: October 29, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore, Ivo Raaijmakers
  • Patent number: 10453701
    Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.
    Type: Grant
    Filed: April 12, 2017
    Date of Patent: October 22, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
  • Patent number: 10443123
    Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.
    Type: Grant
    Filed: August 10, 2018
    Date of Patent: October 15, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
  • Patent number: 10428421
    Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.
    Type: Grant
    Filed: July 27, 2016
    Date of Patent: October 1, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
  • Patent number: 10395917
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Grant
    Filed: February 22, 2018
    Date of Patent: August 27, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
  • Publication number: 20190259605
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Application
    Filed: January 22, 2019
    Publication date: August 22, 2019
    Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20190249312
    Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 15, 2019
    Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
  • Publication number: 20190244786
    Abstract: Atomic layer etching (ALE) processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase non-metal halide reactant and a second vapor phase halide reactant. In some embodiments both the first and second reactants are chloride reactants. In some embodiments the first reactant is fluorinating gas and the second reactant is a chlorinating gas. In some embodiments a thermal ALE cycle is used in which the substrate is not contacted with a plasma reactant.
    Type: Application
    Filed: April 22, 2019
    Publication date: August 8, 2019
    Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
  • Patent number: 10373820
    Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.
    Type: Grant
    Filed: June 1, 2016
    Date of Patent: August 6, 2019
    Assignee: ASM IP Holding B.V.
    Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
  • Publication number: 20190181034
    Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.
    Type: Application
    Filed: December 7, 2018
    Publication date: June 13, 2019
    Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
  • Publication number: 20190100837
    Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.
    Type: Application
    Filed: August 10, 2018
    Publication date: April 4, 2019
    Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
  • Publication number: 20190081149
    Abstract: In one aspect, methods of silicidation and germanidation are provided. In some embodiments, methods for forming metal silicide can include forming a non-oxide interface, such as germanium or solid antimony, over exposed silicon regions of a substrate. Metal oxide is formed over the interface layer. Annealing and reducing causes metal from the metal oxide to react with the underlying silicon and form metal silicide. Additionally, metal germanide can be formed by reduction of metal oxide over germanium, whether or not any underlying silicon is also silicided. In other embodiments, nickel is deposited directly and an interface layer is not used. In another aspect, methods of depositing nickel thin films by vapor phase deposition processes are provided. In some embodiments, nickel thin films are deposited by ALD.
    Type: Application
    Filed: July 20, 2018
    Publication date: March 14, 2019
    Inventors: Viljami J. Pore, Suvi P. Haukka, Tom E. Blomberg, Eva E. Tois
  • Patent number: 10199213
    Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.
    Type: Grant
    Filed: July 17, 2017
    Date of Patent: February 5, 2019
    Assignee: ASM IP HOLDING B.V.
    Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
  • Publication number: 20180366314
    Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).
    Type: Application
    Filed: February 22, 2018
    Publication date: December 20, 2018
    Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka