Patents by Inventor Suvi P. Haukka
Suvi P. Haukka has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20210358745Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: ApplicationFiled: July 30, 2021Publication date: November 18, 2021Inventors: Jan Willem Maes, Michael Eugene Givens, Suvi P. Haukka, Vamsi Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie, Charles Dezelah, Marko Tuominen
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Patent number: 11174550Abstract: Methods are provided for selectively depositing a material on a first metal or metallic surface of a substrate relative to a second, dielectric surface of the substrate, or for selectively depositing metal oxides on a first metal oxide surface of a substrate relative to a second silicon oxide surface. The selectively deposited material can be, for example, a metal, metal oxide, metal nitride, metal silicide, metal carbide and/or dielectric material. In some embodiments a substrate comprising a first metal or metallic surface and a second dielectric surface is alternately and sequentially contacted with a first vapor-phase metal halide reactant and a second reactant. In some embodiments a substrate comprising a first metal oxide surface and a second silicon oxide surface is alternately and sequentially contacted with a first vapor phase metal fluoride or chloride reactant and water.Type: GrantFiled: September 18, 2019Date of Patent: November 16, 2021Assignee: ASM IP HOLDING B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Elina Färm, Tom E. Blomberg
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Publication number: 20210351031Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyurea or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.Type: ApplicationFiled: July 8, 2021Publication date: November 11, 2021Inventors: Elina Färm, Hidemi Suemori, Raija H. Matero, Antti Niskanen, Suvi P. Haukka, Eva Tois
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Patent number: 11145506Abstract: Methods for selective deposition are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. An inhibitor, such as a polyimide layer, is selectively formed from vapor phase reactants on the first surface relative to the second surface. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the first surface. The first surface can be metallic while the second surface is dielectric. Accordingly, material, such as a dielectric transition metal oxides and nitrides, can be selectively deposited on metallic surfaces relative dielectric surfaces using techniques described herein.Type: GrantFiled: September 30, 2019Date of Patent: October 12, 2021Assignee: ASM IP HOLDING B.V.Inventors: Jan Willem Hub Maes, Michael Eugene Givens, Suvi P. Haukka, VamsI Paruchuri, Ivo Johannes Raaijmakers, Shaoren Deng, Andrea Illiberi, Eva E. Tois, Delphine Longrie
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Publication number: 20210285097Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.Type: ApplicationFiled: May 27, 2021Publication date: September 16, 2021Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
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Patent number: 11094535Abstract: Methods for selective deposition, and structures thereof, are provided. Material is selectively deposited on a first surface of a substrate relative to a second surface of a different material composition. A passivation layer is selectively formed from vapor phase reactants on the first surface while leaving the second surface without the passivation layer. A layer of interest is selectively deposited from vapor phase reactants on the second surface relative to the passivation layer. The first surface can be metallic while the second surface is dielectric, or the second surface is dielectric while the second surface is metallic. Accordingly, material, such as a dielectric, can be selectively deposited on either metallic or dielectric surfaces relative to the other type of surface using techniques described herein. Techniques and resultant structures are also disclosed for control of positioning and shape of layer edges relative to boundaries between underlying disparate materials.Type: GrantFiled: February 9, 2018Date of Patent: August 17, 2021Assignee: ASM IP HOLDING B.V.Inventors: Eva E. Tois, Suvi P. Haukka, Raija H. Matero, Elina Färm, Delphine Longrie, Hidemi Suemori, Jan Willem Maes, Marko Tuominen, Shaoren Deng, Ivo Johannes Raaijmakers, Andrea Illiberi
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Patent number: 11081342Abstract: Vapor deposition processes are provided in which a material is selectively deposited on a first surface of a substrate relative to a second organic surface. In some embodiments a substrate comprising a first surface, such as a metal, semi-metal or oxidized metal or semi-metal is contacted with a first vapor phase hydrophobic reactant and a second vapor phase reactant such that the material is deposited selectively on the first surface relative to the second organic surface. The second organic surface may comprise, for example, a self-assembled monolayer, a directed self-assembled layer, or a polymer, such as a polyimide, polyamide, polyuria or polystyrene. The material that is deposited may be, for example, a metal or metallic material. In some embodiments the material is a metal oxide, such as ZrO2 or HfO2. In some embodiments the vapor deposition process is a cyclic chemical vapor deposition (CVD) process or an atomic layer deposition (ALD) process.Type: GrantFiled: April 28, 2017Date of Patent: August 3, 2021Assignee: ASM IP HOLDING B.V.Inventors: Elina Färm, Hidemi Suemori, Raija Matero, Antti Niskanen, Suvi P. Haukka, Eva Tois
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Patent number: 11069522Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).Type: GrantFiled: August 14, 2019Date of Patent: July 20, 2021Assignee: ASM IP HOLDING B.V.Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
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Patent number: 11056385Abstract: Metallic layers can be selectively deposited on one surface of a substrate relative to a second surface of the substrate. In some embodiments, the metallic layers are selectively deposited on copper instead of insulating or dielectric materials. In some embodiments, a first precursor forms a layer on the first surface and is subsequently reacted or converted to form a metallic layer. The deposition temperature may be selected such that a selectivity of above about 50% or even about 90% is achieved.Type: GrantFiled: December 7, 2018Date of Patent: July 6, 2021Assignee: ASM INTERNATIONAL N.V.Inventors: Suvi P. Haukka, Antti Niskanen, Marko Tuominen
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Patent number: 11047040Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.Type: GrantFiled: October 7, 2019Date of Patent: June 29, 2021Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore
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Publication number: 20210175092Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: ApplicationFiled: December 22, 2020Publication date: June 10, 2021Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
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Publication number: 20210151324Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: ApplicationFiled: October 23, 2020Publication date: May 20, 2021Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
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Publication number: 20210082684Abstract: Methods and precursors for depositing silicon nitride films by atomic layer deposition (ALD) are provided. In some embodiments the silicon precursors comprise an iodine ligand. The silicon nitride films may have a relatively uniform etch rate for both vertical and the horizontal portions when deposited onto three-dimensional structures such as FinFETS or other types of multiple gate FETs. In some embodiments, various silicon nitride films of the present disclosure have an etch rate of less than half the thermal oxide removal rate with diluted HF (0.5%).Type: ApplicationFiled: November 23, 2020Publication date: March 18, 2021Inventors: Antti J. Niskanen, Shang Chen, Viljami Pore, Atsuki Fukazawa, Hideaki Fukuda, Suvi P. Haukka
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Patent number: 10923361Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity. Masking applications employing selective organic films are provided. Post-deposition modification of the organic films, such as metallic infiltration and/or carbon removal, is also disclosed.Type: GrantFiled: October 21, 2019Date of Patent: February 16, 2021Assignee: ASM IP Holding B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma, Jan Willem Maes, Delphine Longrie, Krzysztof Kachel
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Patent number: 10867788Abstract: The invention relates to depositing a layer on a substrate in a reactor, by: introducing a first precursor comprising a silicon halide in the reactor; introducing a second precursor in the reactor; providing an energy source to create a plasma from the second precursor so that the second precursor reacts with the first precursor until a primary layer comprising silicon and second precursor of a desired thickness is formed; stop introducing the second precursor; and, subsequently introducing the silicon halide in the reactor at a temperature causing decomposition of the silicon halide precursor to provide a substantially pure amorphous silicon layer on top of the primary layer.Type: GrantFiled: December 15, 2017Date of Patent: December 15, 2020Assignee: ASM IP Holding B.V.Inventors: Timothee Julien Vincent Blanquart, Suvi P. Haukka
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Patent number: 10854460Abstract: Processes are provided herein for deposition of organic films. Organic films can be deposited, including selective deposition on one surface of a substrate relative to a second surface of the substrate. For example, polymer films may be selectively deposited on a first metallic surface relative to a second dielectric surface. Selectivity, as measured by relative thicknesses on the different layers, of above about 50% or even about 90% is achieved. The selectively deposited organic film may be subjected to an etch process to render the process completely selective. Processes are also provided for particular organic film materials, independent of selectivity.Type: GrantFiled: July 8, 2019Date of Patent: December 1, 2020Assignee: ASM IP Holding B.V.Inventors: Eva E. Tois, Hidemi Suemori, Viljami J. Pore, Suvi P. Haukka, Varun Sharma
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Patent number: 10854444Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: GrantFiled: January 27, 2020Date of Patent: December 1, 2020Assignee: ASM IP Holding B.V.Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Publication number: 20200308709Abstract: Thermal atomic layer etching processes are disclosed. In some embodiments, the methods comprise at least one etch cycle in which the substrate is alternately and sequentially exposed to a first vapor phase halide reactant and a second vapor halide reactant. In some embodiments, the first reactant may comprise an organic halide compound. During the thermal ALE cycle, the substrate is not contacted with a plasma reactant.Type: ApplicationFiled: May 22, 2020Publication date: October 1, 2020Inventors: Tom E. Blomberg, Varun Sharma, Suvi P. Haukka, Marko J. Tuominen, Chiyu Zhu
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Publication number: 20200266054Abstract: In some aspects, methods of forming a metal sulfide thin film are provided. According to some methods, a metal sulfide thin film is deposited on a substrate in a reaction space in a cyclical process where at least one cycle includes alternately and sequentially contacting the substrate with a first vapor-phase metal reactant and a second vapor-phase sulfur reactant. In some aspects, methods of forming a three-dimensional architecture on a substrate surface are provided. In some embodiments, the method includes forming a metal sulfide thin film on the substrate surface and forming a capping layer over the metal sulfide thin film. The substrate surface may comprise a high-mobility channel.Type: ApplicationFiled: January 27, 2020Publication date: August 20, 2020Inventors: Suvi P. Haukka, Fu Tang, Michael E. Givens, Jan Willem Maes, Qi Xie
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Publication number: 20200181766Abstract: Methods are provided for dual selective deposition of a first material on a first surface of a substrate and a second material on a second, different surface of the same substrate. The selectively deposited materials may be, for example, metal, metal oxide, or dielectric materials.Type: ApplicationFiled: October 7, 2019Publication date: June 11, 2020Inventors: Suvi P. Haukka, Raija H. Matero, Eva Tois, Antti Niskanen, Marko Tuominen, Hannu Huotari, Viljami J. Pore