Patents by Inventor Ta Lin

Ta Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 9210331
    Abstract: A camera device is provided. The camera device includes a flash unit, an image capture module, and a controller. The flash unit generates a preset flash with a predetermined Correlated Color Temperature value to illuminate an object, and the image capture module captures a test image from the object when the preset flash illuminates the object. The controller determines an adjusted CCT value according to a color difference between the test image and a predetermined color. When the controller has determined the adjusted CCT value, the flash unit generates an adjusted flash with the adjusted CCT value to illuminate the object. When the adjusted flash illuminates the object, the image capture module captures an adjusted image.
    Type: Grant
    Filed: July 10, 2013
    Date of Patent: December 8, 2015
    Assignee: HTC CORPORATION
    Inventors: Fu-Cheng Fan, Chih-Jen Hu, Ming-Tien Lin, Chun-Ta Lin
  • Patent number: 9204238
    Abstract: A method for reproducing a surround audio signal using an electronic device. The electronic device first establishes connections between the electronic device and other N?1 electronic devices, once the electronic device sets each of the N electronic devices to output one of the N channel signals according to one-to-one relationships, the electronic device controls a speaker of each of the N electronic devices to output the corresponding channel signal, to reproduce the surround audio signal.
    Type: Grant
    Filed: October 28, 2013
    Date of Patent: December 1, 2015
    Assignee: Chiun Mai Communication Systems, Inc.
    Inventor: Chih-Ta Lin
  • Publication number: 20150340473
    Abstract: A device includes insulation regions over portions of a semiconductor substrate, and a III-V compound semiconductor region over top surfaces of the insulation regions, wherein the III-V compound semiconductor region overlaps a region between opposite sidewalls of the insulation regions. The III-V compound semiconductor region includes a first and a second III-V compound semiconductor layer formed of a first III-V compound semiconductor material having a first band gap, and a third III-V compound semiconductor layer formed of a second III-V compound semiconductor material between the first and the second III-V compound semiconductor layers. The second III-V compound semiconductor material has a second band gap lower than the first band gap. A gate dielectric is formed on a sidewall and a top surface of the III-V compound semiconductor region. A gate electrode is formed over the gate dielectric.
    Type: Application
    Filed: July 31, 2015
    Publication date: November 26, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Hung-Ta Lin, Chun-Feng Nieh, Chung-Yi Yu, Chi-Ming Chen
  • Publication number: 20150341538
    Abstract: Methods and systems for generating long shutter frames are provided. First, frames are captured or obtained from a video file. A weight is assigned to the respective frame. The frames are composed according to the corresponding weights to generate a long shutter frame.
    Type: Application
    Filed: May 23, 2014
    Publication date: November 26, 2015
    Applicant: HTC Corporation
    Inventor: Chun-Ta LIN
  • Publication number: 20150333129
    Abstract: A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate.
    Type: Application
    Filed: July 27, 2015
    Publication date: November 19, 2015
    Inventors: Meng-Ku Chen, Hung-Ta Lin
  • Patent number: 9182645
    Abstract: A portable electronic device is provided, including a housing, a display module, an optical element and a switchable layer. The housing has a first surface and an opaque layer disposed under the first surface, the opaque layer having a first aperture and a second aperture. The display module is disposed under the first surface and overlapped with the first aperture. The optical element is disposed under the opaque layer. The switchable layer is disposed between the optical element and the second aperture and overlapping the second aperture, wherein the switchable layer is capable of being switched between a substantially opaque state and a substantially transparent state. The substantially opaque state prevents viewing of the optical element through the switchable layer and the substantially transparent state allows viewing of the optical element through the switchable layer.
    Type: Grant
    Filed: September 18, 2013
    Date of Patent: November 10, 2015
    Assignee: HTC CORPORATION
    Inventors: Ming-Tien Lin, Chun-Ta Lin, Chih-Jen Hu
  • Patent number: 9184289
    Abstract: A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.
    Type: Grant
    Filed: November 8, 2013
    Date of Patent: November 10, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Mao-Lin Huang, Chien-Hsun Wang, Chun-Hsiung Lin, Meng-Ku Chen, Li-Ting Wang, Hung-Ta Lin
  • Publication number: 20150318213
    Abstract: A tunnel field-effect transistor and method fabricating the same are provided. The tunnel field-effect transistor includes a drain region, a source region with opposite conductive type to the drain region, a channel region disposed between the drain region and the source region, a metal gate layer disposed around the channel region, and a high-k dielectric layer disposed between the metal gate layer and the channel region.
    Type: Application
    Filed: August 8, 2014
    Publication date: November 5, 2015
    Inventors: Teng-Chun TSAI, Li-Ting WANG, Cheng-Tung LIN, De-Fang CHEN, Chih-Tang PENG, Chien-Hsun WANG, Hung-Ta LIN
  • Publication number: 20150318214
    Abstract: The tunnel field-effect transistor includes a drain layer, a source layer, a channel layer, a metal gate layer, and a high-k dielectric layer. The drain and source layers are of opposite conductive types. The channel layer is disposed between the drain layer and the source layer. At least one of the drain layer, the channel layer, and the source layer has a substantially constant doping concentration. The metal gate layer is disposed around the channel layer. The high-k dielectric layer is disposed between the metal gate layer and the channel layer.
    Type: Application
    Filed: August 14, 2014
    Publication date: November 5, 2015
    Inventors: Teng-Chun TSAI, Cheng-Tung LIN, Li-Ting WANG, Chih-Tang PENG, De-Fang CHEN, Hung-Ta LIN, Chien-Hsun WANG
  • Patent number: 9166035
    Abstract: A transistor includes a gate terminal, a source terminal and a drain terminal. At least one of the source and drain terminals has a layered configuration that includes a terminal layer and an intervening layer. The terminal layer has a top surface and a bottom surface. The intervening layer is located within the terminal layer, between and spaced from the top and bottom surfaces, is oriented to be perpendicular to current flow, and is less than one tenth the thickness of the terminal layer. The terminal layer and the intervening layer include a common semiconductive compound and a common dopant, with a concentration of the dopant in the intervening layer being over ten times an average concentration of the dopant in the terminal layer.
    Type: Grant
    Filed: September 12, 2013
    Date of Patent: October 20, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company Limited
    Inventors: Hung-Ta Lin, Mao-Lin Huang, Li-Ting Wang, Chien-Hsun Wang, Meng-Ku Chen, Chun-Hsiung Lin, Pang-Yen Tsai, Hui-Cheng Chang
  • Patent number: 9160917
    Abstract: A handheld electronic apparatus, an image capturing apparatus and focusing method thereof are provided. The image capturing apparatus includes a main image capturer, an auxiliary image capturer and a controller. The main image capturer performs an image capturing operation on a target object according to a detection focusing distance. The auxiliary image capturer is disposed adjacent to the main image capturer. The auxiliary image capturer performs a plurality of focusing operations on the target object according to a plurality of focusing distances, and generates a plurality of image contrast values. The controller controls the main image capturer and the auxiliary image capturer. The controller selects one of the focusing distances to be the detection focusing distance according to the image contrast values.
    Type: Grant
    Filed: July 9, 2013
    Date of Patent: October 13, 2015
    Assignee: HTC CORPORATION
    Inventors: Ming-Tien Lin, Chun-Ta Lin, Chih-Jen Hu
  • Patent number: 9143704
    Abstract: An image capturing device and a method thereof are provided. The image capturing device includes an image sensor and a processor. The image sensor includes a color filter array and a sensor chip. The color filter array includes a first region permitting visible light and infrared light to pass and a second region permitting the infrared light to pass. The sensor chip obtains a target image through the color filter array, wherein the target image includes a composite image corresponding to the first region and a first group infrared image corresponding to the second region, and the composite image includes a second group infrared image, where the second group infrared image and the first group infrared image are linear correlated. The processor adjusts a proportion of the second group infrared image in the composite image by employing the first group infrared image, so as to generate a processed image.
    Type: Grant
    Filed: November 29, 2012
    Date of Patent: September 22, 2015
    Assignee: HTC Corporation
    Inventor: Chun-Ta Lin
  • Publication number: 20150255575
    Abstract: The present disclosure relates to a semiconductor device having a delta doped sheet layer within a transistor's source/drain region to reduce contact resistance, and an associated method. In some embodiments, a dielectric layer is disposed over the transistor. A trench is disposed through the dielectric layer to the source/drain region and a conductive contact is disposed in the trench. The source/drain region comprises a delta doped sheet layer with a doping concentration that is higher than rest of the source/drain region.
    Type: Application
    Filed: March 6, 2014
    Publication date: September 10, 2015
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Li-Ting Wang, Teng-Chun Tsai, Cheng-Tung Lin, Hung-Ta Lin, Huicheng Chang
  • Patent number: 9130115
    Abstract: A light-emitting diode (LED) device is provided. The LED device has raised semiconductor regions formed on a substrate. LED structures are formed over the raised semiconductor regions such that bottom contact layers and active layers of the LED device are conformal layers. The top contact layer has a planar surface. In an embodiment, the top contact layers are continuous over a plurality of the raised semiconductor regions while the bottom contact layers and the active layers are discontinuous between adjacent raised semiconductor regions.
    Type: Grant
    Filed: February 24, 2014
    Date of Patent: September 8, 2015
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chen-Hua Yu, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu, Hung-Ta Lin
  • Patent number: 9099388
    Abstract: A device includes insulation regions over portions of a semiconductor substrate, and a III-V compound semiconductor region over top surfaces of the insulation regions, wherein the III-V compound semiconductor region overlaps a region between opposite sidewalls of the insulation regions. The III-V compound semiconductor region includes a first and a second III-V compound semiconductor layer formed of a first III-V compound semiconductor material having a first band gap, and a third III-V compound semiconductor layer formed of a second III-V compound semiconductor material between the first and the second III-V compound semiconductor layers. The second III-V compound semiconductor material has a second band gap lower than the first band gap. A gate dielectric is formed on a sidewall and a top surface of the III-V compound semiconductor region. A gate electrode is formed over the gate dielectric.
    Type: Grant
    Filed: October 21, 2011
    Date of Patent: August 4, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Ta Lin, Chun-Feng Nieh, Chung-Yi Yu, Chi-Ming Chen
  • Patent number: 9099311
    Abstract: A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate.
    Type: Grant
    Filed: January 31, 2013
    Date of Patent: August 4, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Meng-Ku Chen, Hung-Ta Lin, Huicheng Chang
  • Patent number: 9088708
    Abstract: An image processing apparatus includes a camera module, first and second pixel extraction interfaces, an image processing module, and a focus controller. The camera module includes a lens, a sensor aligned with the lens along a direction, and a focus actuator connected to the lens. The first and the second pixel extraction interfaces are connected to the sensor to acquire a first image at a first frame rate and a second image at a second frame rate, respectively; the second frame rate is greater than the first frame rate. The image processing module determines depth information according to the second image, receives the first image and outputs a corresponding image file. The focus controller is connected between the image processing module and the focus actuator to drive the focus actuator according to the depth information and to adjust a relative distance between the sensor and the lens.
    Type: Grant
    Filed: July 19, 2013
    Date of Patent: July 21, 2015
    Assignee: HTC CORPORATION
    Inventors: Chun-Ta Lin, Ming-Tien Lin, Chih-Jen Hu, Fu-Cheng Fan
  • Publication number: 20150200258
    Abstract: An embodiment is a method. A first III-V compound semiconductor is epitaxially grown in a trench on a substrate, and the epitaxial growth is performed in a chamber. The first III-V compound semiconductor has a first surface comprising a facet. After the epitaxial growth, the first surface of the first III-V compound semiconductor is etched to form an altered surface of the first III-V compound semiconductor. Etching the first surface is performed in the chamber in situ. A second III-V compound semiconductor is epitaxially grown on the altered surface of the first III-V compound semiconductor. The epitaxial growth of the first III-V compound semiconductor may be performed in a MOCVD chamber, and the etch may use an HCl gas. Structures resulting from methods are also disclosed.
    Type: Application
    Filed: March 25, 2015
    Publication date: July 16, 2015
    Inventors: Meng-Ku Chen, Hung-Ta Lin, Pang-Yen Tsai, Huicheng Chang
  • Publication number: 20150194490
    Abstract: A method includes epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type. The first III-V compound semiconductor is grown using precursors including a first precursor comprising Cp2Mg, and a second precursor comprising a donor impurity. A second III-V compound semiconductor is grown overlying and contacting the first III-V compound semiconductor. The second III-V compound semiconductor is of n-type.
    Type: Application
    Filed: January 3, 2014
    Publication date: July 9, 2015
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Ku Chen, Hung-Ta Lin, Pang-Yen Tsai, Huicheng Chang
  • Publication number: 20150194833
    Abstract: A protective case for a mobile device is disclosed. The case includes an additional power source (i.e., a battery) that can supply electric current to the mobile device. A processing device within the protective case may be wirelessly connected to the mobile device, such as with a Bluetooth interface, and thereby control operational aspects of the battery case, including for example control over supplying power to the mobile device. The battery case may be part of a charging system or kit that includes a uniquely designed separate charger. In yet another aspect, the protective case may include unitary bumper flexible bumper co-molded to the body of the case and a male connector extending from a nested portion that is adapted to tilt outward from the case to facilitate insertion of the corresponding female port on the mobile device into the connector and into the case.
    Type: Application
    Filed: January 2, 2015
    Publication date: July 9, 2015
    Applicant: Incipio Technologies, Inc.
    Inventors: Andy Fathollahi, Yu Ta Lin, Jin Woo Choi