Abstract: A memory system is provided. The memory system includes a memory controller and a first memory block. The first memory block is configured to store a first data from a top of the first memory block in a top-down fashion. The first memory block is configured to store a first metadata corresponding to the first data from a bottom of the first memory block in a bottom-up fashion. The first data forms a first data area. The first metadata forms a first metadata area. And a first continuous space is formed between a bottom of the first data area and a top of the first metadata area.

Abstract: A method for forming a double step surface on a semiconductor substrate includes, with an etching process used in a Metal-Organic Chemical Vapor Deposition (MOCVD) process, forming a rough surface on a region of a semiconductor substrate. The method further includes, with an annealing process used in the MOCVD process, forming double stepped surface on the region of the semiconductor substrate.

Abstract: A semiconductor package is provided, which includes: a first semiconductor device having a first top surface and a first bottom surface opposite to the first top surface; a plurality of conductive balls formed on the first top surface of the first semiconductor device; a second semiconductor device having a second top surface and a second bottom surface opposite to the second top surface; and a plurality of conductive posts formed on the second bottom surface of the second semiconductor device and correspondingly bonded to the conductive balls for electrically connecting the first semiconductor device and the second semiconductor device, wherein the conductive posts have a height less than 300 um. Therefore, the present invention can easily control the height of the semiconductor package and is applicable to semiconductor packages having fine-pitch conductive balls.

Abstract: An electronic system, an electronic apparatus, and an access authentication method thereof are provided. The electronic system includes a master apparatus and a slave apparatus. The slave apparatus is coupled to the master apparatus through a serial transmission interface. The slave apparatus includes a data storage unit protected by the slave apparatus with a predetermined key. The master apparatus sends an access request to the data storage unit through the serial transmission interface. The slave apparatus determines whether the master apparatus is allowed to access the data storage unit according to the predetermined key and a key inputted by the master apparatus for authentication.

Abstract: An embodiment of the invention provides a 3D camera module. The 3D camera module comprise a first lens, a second lens, a shutter control device, a first mirror, a second mirror and an image sensor. The first lens receives a first light beam. The second lens receives a second light beam. The shutter control device to control the first lens and the second camera and only one of the first shutter and the second shutter is turned on in one time period. The first mirror reflects the first light beam to the image sensor. The second mirror reflects the second light beam to the image sensor. The image sensor receives the first light beam and the second light beam to capture a first image and a second image and a 3D image is generated according to the first image and the second image.

Abstract: A light emitting device driving circuit and a method thereof are provided. The light emitting device driving circuit includes a frequency detection circuit and a frequency adjustment circuit. The frequency detection circuit is configured to detect a light source frequency of a light emitting device to provide at least one detection frequency signal. The frequency adjustment circuit adjusts the light source frequency of the light emitting device according to the detection frequency signal and a plurality of preset flicker frequencies.

Abstract: A docking station for a portable electronic device is provided. The docking station includes a main body, a supporting structure and a pivot. The pivot includes a first fixing portion, a second fixing portion and a pivot portion. The first fixing portion is disposed at the supporting structure, the second fixing portion is disposed at the main body. The pivot portion is connected to the first fixing portion and the second fixing portion. When the portable electronic device is disposed at the supporting structure, the portable electronic device and the supporting structure can rotate relative to the main body via the pivot. The docking station allows the portable electronic device disposing at the docking station drives the supporting structure to rotate relatively to the main body alone the axis of the pivot to stand in vertical, and then the horizontal space of the portable electronic device is saved.

Abstract: A light-emitting diode (LED) driving circuit is configured for driving at least one group of LEDs. The LED driving circuit includes a constant current source, a pulse width modulation (PWM) element, and at least one pulse frequency modulation (PFM) element. The constant current source is configured for generating a current signal with a constant current value; the PWM element is electrically connected to the constant current source and configured for modulating the current signal to generate a PWM signal corresponding to the current signal; the PFM element is electrically connected between the PWM element and the LED and configured for modulating a frequency width of the PWM signal to generate at least one PFM signal for driving the LED.

Abstract: Methods and systems for generating HDR (High Dynamic Range) images are provided. First, frames are continuously captured, wherein the respective frames are captured with a same exposure time. At least one intermediary frame is then generated according to at least one of the frames. The at least one intermediary frame is composed using a HDR composition algorithm to generate a HDR image.

Abstract: A mobile terminal includes: a peripheral interface having four terminals; an I2C interface; a first detection unit adapted to detect if an I2C device is inserted into the peripheral interface; and a first control unit adapted to, when the first detection unit detects there is an I2C device inserted into the peripheral interface, connect the I2C interface with the peripheral interface, such that the I2C interface is connected with the detected I2C device plugged in the peripheral interface. Accordingly, information exchange between mobile terminals and I2C devices can be achieved, thus adaptability of the mobile terminals can be expanded.

Abstract: A method of fabricating a fin field effect transistor (FinFET) including forming a first insulation region and a second insulation region and fin there between. The method further includes forming a gate stack over a portion of the fin and over a portion of the first and second insulation regions. The method further includes tapering the top surfaces of the first and second insulation regions not covered by the gate stack.

Abstract: A method includes epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type. The first III-V compound semiconductor is grown using precursors including a first precursor comprising Cp2Mg, and a second precursor comprising a donor impurity. A second III-V compound semiconductor is grown overlying and contacting the first III-V compound semiconductor. The second III-V compound semiconductor is of n-type.

Abstract: A semiconductor devices and method of formation are provided herein. A semiconductor device includes a gate structure over a channel and an active region adjacent the channel. The active region includes a repaired doped region and a growth region over the repaired doped region. The repaired doped region includes a first dopant and a second dopant, where the second dopant is from the growth region. A method of forming a semiconductor device includes increasing a temperature during exposure to at least one of dopant(s) or agent(s) to form an active region adjacent a channel, where the active region includes a repaired doped region and a growth region over the repaired doped region.

Abstract: A modularized server includes a main housing, a first block unit, a second block unit, and a removable module. The main housing has a first inserting groove and a second inserting groove, and the removable module has a guide channel. When the removable module is disposed in the first inserting groove along a sliding direction, the first block unit is located in the guide channel. Moreover, the second block unit blocks the removable module from being installed to the second inserting groove.

Abstract: A hand-held electronic apparatus, an image capturing apparatus and a method for obtaining depth information are provided. The image capturing apparatus includes a time of fly (TOF) image capturer, a TOF controller, a main and sub image capturers, and a controller. The TOF image capturer calculates a TOF depth map according to a TOF image, defines an effective region and an un-effective region according to the TOF depth map, and obtains a first depth information set of the effective region. The main and sub image capturers captures a first and second images, respectively. The controller obtains a second depth information set of the un-effectively region by comparing the first and second images, and generates an overall depth map by combining the first depth information set and the second depth information set.

Abstract: Systems, methods, and other embodiments associated with unified control of timing recovery and packet processing are described. According to one embodiment, a method for performing unified control of timing recovery and packet processing is provided. The method includes sampling a received signal according to an ADC timing signal to produce a sequence of samples. The received signal corresponds to a packet and was transmitted according to a transmit timing signal. The method includes determining a phase offset between the ADC timing signal and the transmit timing signal and identifying, based, at least in part, on the phase offset, a data portion of the sequence of samples that contains data encoded in the received signal. A re-generated sample sequence that adjusts the data portion based on the phase offset is calculated.

Abstract: A semiconductor package is provided, which includes: a first semiconductor device having a first top surface and a first bottom surface opposite to the first top surface; a plurality of conductive balls formed on the first top surface of the first semiconductor device; a second semiconductor device having a second top surface and a second bottom surface opposite to the second top surface; and a plurality of conductive posts formed on the second bottom surface of the second semiconductor device and correspondingly bonded to the conductive balls for electrically connecting the first semiconductor device and the second semiconductor device, wherein the conductive posts have a height less than 300 um. Therefore, the present invention can easily control the height of the semiconductor package and is applicable to semiconductor packages having fine-pitch conductive balls.

Abstract: A method includes epitaxially growing a first III-V compound semiconductor, wherein the first III-V compound semiconductor is of p-type. The first III-V compound semiconductor is grown using precursors including a first precursor comprising Cp2Mg, and a second precursor comprising a donor impurity. A second III-V compound semiconductor is grown overlying and contacting the first III-V compound semiconductor. The second III-V compound semiconductor is of n-type.

Abstract: Structures and methods are provided for forming bottom source/drain contact regions for nanowire devices. A nanowire is formed on a substrate. The nanowire extends substantially vertically relative to the substrate and is disposed between a top source/drain region and a bottom source/drain region. A first dielectric material is formed on the bottom source/drain region. A second dielectric material is formed on the first dielectric material. A first etching process is performed to remove part of the first dielectric material and part of the second dielectric material to expose part of the bottom source/drain region. A second etching process is performed to remove part of the first dielectric material under the second dielectric material to further expose the bottom source/drain region. A first metal-containing material is formed on the exposed bottom source/drain region. Annealing is performed to form a bottom contact region.

Abstract: A fin field effect transistor including a first insulation region and a second insulation region over a top surface of a substrate. The first insulation region includes tapered top surfaces, and the second insulation region includes tapered top surfaces. The fin field effect transistor further includes a fin extending above the top surface between the first insulation region and the second insulation region. The fin includes a first portion having a top surface below the tapered top surfaces of the first insulation region. The fin includes a second portion having a top surface above the tapered top surfaces of the first insulation region.