Patents by Inventor Ta Lin

Ta Lin has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20130137238
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a buffer layer over a surface of a silicon substrate. The method further includes forming openings that extend into the buffer layer. The method includes forming a shallow trench isolation (STI) structures in each of the openings. The method includes removing a predetermined amount of a top surface of the buffer layer relative to a top surface of the STI structures. The method includes forming an insulator layer over the top surface of the buffer layer and forming a channel layer over the insulator layer.
    Type: Application
    Filed: February 28, 2012
    Publication date: May 30, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Feng NIEH, Huicheng CHANG, Hung-Ta LIN
  • Patent number: 8440517
    Abstract: The disclosure relates to a fin field effect transistor (FinFET). An exemplary structure for a FinFET comprises a substrate comprising a top surface; a first insulation region and a second insulation region over the substrate top surface comprising tapered top surfaces; a fin of the substrate extending above the substrate top surface between the first and second insulation regions, wherein the fin comprises a recessed portion having a top surface lower than the tapered top surfaces of the first and second insulation regions, wherein the fin comprises a non-recessed portion having a top surface higher than the tapered top surfaces; and a gate stack over the non-recessed portion of the fin.
    Type: Grant
    Filed: October 13, 2010
    Date of Patent: May 14, 2013
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Ta Lin, Chu-Yun Fu, Shin-Yeh Huang, Shu-Tine Yang, Hung-Ming Chen
  • Publication number: 20130112939
    Abstract: A circuit structure includes a substrate and a patterned dielectric layer over the substrate. The patterned dielectric layer includes a plurality of vias; and a number of group-III group-V (III-V) compound semiconductor layer. The III-V compound semiconductor layers include a first layer in the vias, a second layer over the first layer and the dielectric layer, and a bulk layer over the second layer.
    Type: Application
    Filed: November 7, 2011
    Publication date: May 9, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Ming CHEN, Po-Chun LIU, Hung-Ta LIN, Chin-Cheng CHANG, Chung-Yi YU, Chia-Shiung TSAI, Ho-Yung David HWANG
  • Publication number: 20130099243
    Abstract: A circuit structure includes a substrate, a nucleation layer of undoped aluminum nitride, a graded buffer layer comprising aluminum, gallium, nitrogen, one of silicon and oxygen, and a p-type conductivity dopant, a ungraded buffer layer comprising gallium, nitrogen, one of silicon and oxygen, and a p-type conductivity dopant without aluminum, and a bulk layer of undoped gallium nitride over the ungraded buffer layer. The various dopants in the graded buffer layer and the ungraded buffer layer increases resistivity and results in layers having an intrinsically balanced conductivity.
    Type: Application
    Filed: October 20, 2011
    Publication date: April 25, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Ming CHEN, Po-Chun LIU, Hung-Ta LIN, Chin-Cheng CHANG, Chung-Yi YU, Chia-Shiung TSAI, Ho-Yung David HWANG
  • Publication number: 20130099283
    Abstract: A device includes insulation regions over portions of a semiconductor substrate, and a III-V compound semiconductor region over top surfaces of the insulation regions, wherein the III-V compound semiconductor region overlaps a region between opposite sidewalls of the insulation regions. The III-V compound semiconductor region includes a first and a second III-V compound semiconductor layer formed of a first III-V compound semiconductor material having a first band gap, and a third III-V compound semiconductor layer formed of a second III-V compound semiconductor material between the first and the second III-V compound semiconductor layers. The second III-V compound semiconductor material has a second band gap lower than the first band gap. A gate dielectric is formed on a sidewall and a top surface of the III-V compound semiconductor region. A gate electrode is formed over the gate dielectric.
    Type: Application
    Filed: October 21, 2011
    Publication date: April 25, 2013
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Hung-Ta Lin, Chun-Feng Nieh, Chung-Yi Yu, Chi-Ming Chen
  • Publication number: 20130095642
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first III-V family layer over a substrate. The first III-V family layer includes a surface having a first surface morphology. The method includes performing an ion implantation process to the first III-V family layer through the surface. The ion implantation process changes the first surface morphology into a second surface morphology. After the ion implantation process is performed, the method includes forming a second III-V family layer over the first III-V family layer. The second III-V family layer has a material composition different from that of the first III-V family layer.
    Type: Application
    Filed: October 14, 2011
    Publication date: April 18, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Feng Nieh, Chung-Yi Yu, Hung-Ta Lin
  • Publication number: 20130078783
    Abstract: Provided is a method of fabricating a semiconductor device. The method includes forming a first dielectric layer over a first surface and a second surface of a silicon substrate. the first and second surfaces being opposite surfaces. A first portion of the first dielectric layer covers the first surface of the substrate, and a second portion of the first dielectric layer covers the second surface of the substrate. The method includes forming openings that extend into the substrate from the first surface. The method includes filling the openings with a second dielectric layer. The method includes removing the first portion of the first dielectric layer without removing the second portion of the first dielectric layer.
    Type: Application
    Filed: September 24, 2011
    Publication date: March 28, 2013
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chun-Feng Nieh, Chung-Yi Yu, Hung-Ta Lin
  • Patent number: 8406719
    Abstract: A receiver is provided and includes a first amplifier configured to amplify, based on a first gain, a radio frequency signal to generate a first amplified signal. The radio frequency signal is received by the receiver on a first channel. A second amplifier generates, based on the first amplified signal and a second gain, a second amplified signal. An output circuit generates a baseband signal based on the second amplified signal. A first detection circuit compares the baseband signal to (i) a first threshold in response to the first gain being at a first level, and (ii) a second threshold in response to the first gain being at a second level. The first detection circuit generates a first detection signal in response to the comparison. A controller, in response to the first detection signal, (i) adjusts the second gain, or (ii) changes the receiver from the first channel.
    Type: Grant
    Filed: May 15, 2012
    Date of Patent: March 26, 2013
    Assignee: Marvell International Ltd
    Inventors: Sek Kin Neng, Yungping Hsu, Tsunglun Yu, Ming Ta Lin, Naveen-Kumar Arani
  • Publication number: 20130057655
    Abstract: The invention provides an image processing system. In one embodiment, the image processing system comprises a first camera, a second camera, a depth map generator, and an automatic focusing module. The first camera generates a first image. The second camera generates a second image. The depth map generator generates a depth map comprising information about visual shift between the first image and the second image. The automatic focusing module estimates a distance between a target object and a center position between the first camera and the second camera, and adjusts the focusing lengths of the first camera and the second camera according to the estimated distance.
    Type: Application
    Filed: September 2, 2011
    Publication date: March 7, 2013
    Inventors: Wen-Yueh SU, Chun-Ta LIN
  • Patent number: 8368652
    Abstract: The invention provides an optical touch device, including a main body, a keyboard and a light emitting member. The keyboard, placed on the main body and having a first end portion and a second end portion, includes a supporting frame, a keycap and a stopping member. The keycap is connected to the supporting frame and moves between a first position and a second position. The stopping member is connected to the keycap and moves simultaneously with the keycap. The light emitting member generates a light beam to the keyboard. When the keycap is in the first position, the light beam passes through the first end portion to the second end portion, and when the keycap is in the second position, the light beam is terminated by the stopping member, such that the light does not reach the second end portion.
    Type: Grant
    Filed: July 30, 2009
    Date of Patent: February 5, 2013
    Assignee: Quanta Computer Inc.
    Inventors: Chien-Ta Lin, Wen-Ji Tsai, Jung-Wen Chang, Chee-Chun Leung
  • Publication number: 20120298956
    Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
    Type: Application
    Filed: August 6, 2012
    Publication date: November 29, 2012
    Applicant: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Hung-Ta Lin, Chen-Hua Yu, Wen-Chih Chiou
  • Publication number: 20120268645
    Abstract: A portable electronic device and an autofocus control method of a camera of the portable electronic device are disclosed. The portable electronic device provides a G-sensor to detect the orientation of the portable electronic device, and provides a storage unit to store autofocus lookup tables for different orientations of the portable electronic device, respectively. According to orientation information from the G-sensor, the central processing unit of the portable electronic device selects one autofocus lookup table from the storage unit and thereby generates an actuating signal for a focus model. The focus model of the portable electronic device is actuated by the actuating signal to adjust an image distance between a lens module and an image sensor of the camera.
    Type: Application
    Filed: April 20, 2011
    Publication date: October 25, 2012
    Inventors: Li-Yin CHEN, Chun-Ta Lin, Yi-Tsung Cheng
  • Publication number: 20120256557
    Abstract: A multi-lamp driving system includes a power stage circuit, a pulse width modulation (PWM) controller, a plurality of transformer circuits, and an abnormal detection circuit. Each of the transformer circuits includes a first primary winding and a second primary winding connected in series and a first secondary winding and a second secondary winding respectively outputting AC power signals to drive at least one lamp. The abnormal detection circuit is connected to a junction of the first primary winding and the second primary winding of each of the transformer circuits, and determines if voltages of the junction of the first primary winding and the second primary winding of each of the transformer circuits are different to determine if the at least two lamps are normal. The abnormal detection circuit further generate control signals to control the PWM controller upon the condition that one of the at least two lamps are abnormal.
    Type: Application
    Filed: June 24, 2011
    Publication date: October 11, 2012
    Applicant: AMPOWER TECHNOLOGY CO., LTD.
    Inventors: CHIH-CHAN GER, YU-HSIAO CHAO, CHENG-TA LIN
  • Publication number: 20120236482
    Abstract: An electronic apparatus and a display panel module are disclosed. The display panel module includes a frame, a display panel, and a removable element. A first end of the removable element is fixed on the display panel, and a second end of the removable element is removably fixed on an inner wall of the frame to make the display panel not contact with the frame.
    Type: Application
    Filed: March 18, 2012
    Publication date: September 20, 2012
    Applicant: PEGATRON CORPORATION
    Inventors: Hsin-Ta Lin, Po-Shou Chou, Ching-Feng Hsu
  • Patent number: 8247996
    Abstract: A backlight driving system comprises a first inverter circuit, a second inverter circuit, a pulse width modulation (PWM) controller, a frequency regulator and a switch circuit. The pulse width modulation (PWM) controller generates an illumination signal to control the first and second inverter circuits to illuminate first and second backlight units in response to a first enable signal, and generates a maintaining signal to control the first and second inverter circuits to maintain stable lighting of the first and second backlight units in response to a first feedback signal. The frequency regulator controls the PWM controller to generate the illumination signal and the maintaining signal in response to a second enable signal and a second feedback signal, respectively. The switch circuit connects the PWM controller to the second inverter circuit in response to the second enable signal.
    Type: Grant
    Filed: March 26, 2010
    Date of Patent: August 21, 2012
    Assignee: Ampower Technology Co., Ltd.
    Inventors: Wei-Chi Huang, Cheng-Ta Lin, Tsung-Liang Hung
  • Patent number: 8236583
    Abstract: A method of forming a light-emitting diode (LED) device and separating the LED device from a growth substrate is provided. The LED device is formed by forming an LED structure over a growth substrate. The method includes forming and patterning a mask layer on the growth substrate. A first contact layer is formed over the patterned mask layer with an air bridge between the first contact layer and the patterned mask layer. The first contact layer may be a contact layer of the LED structure. After the formation of the LED structure, the growth substrate is detached from the LED structure along the air bridge.
    Type: Grant
    Filed: September 4, 2009
    Date of Patent: August 7, 2012
    Assignee: TSMC Solid State Lighting Ltd.
    Inventors: Ding-Yuan Chen, Hung-Ta Lin, Chen-Hua Yu, Wen-Chih Chiou
  • Patent number: 8203525
    Abstract: A dual-lamp driving circuit includes a first frequency switch control circuit, a second frequency switch control circuit, a pulse-width modulation (PWM) control circuit, a first power stage circuit, a second power stage circuit, a conversion circuit, and a feedback circuit. The first frequency switch control circuit receives a first enable signal, and outputs a first frequency switch signal according to the first enable signal. The second frequency switch control circuit receives a second enable signal, and outputs a second frequency switch signal according to the second enable signal. The PWM control circuit outputs various PWM control signals according to the first frequency switch signal and the second frequency switch signal. The feedback circuit feeds back a first current signal from the first lamp to the frequency switch control circuit, and a second current signal from the second lamp to the frequency switch control circuit.
    Type: Grant
    Filed: October 22, 2009
    Date of Patent: June 19, 2012
    Assignee: Ampower Technology Co., Ltd.
    Inventors: Cheng-Ta Lin, Tsung-Liang Hung, Yi-Hsun Lin
  • Publication number: 20120144749
    Abstract: A structure of the lockable door includes a door cover, a first sliding member, a fastening member, and a second sliding member. The door cover is hinged to a case, and can selectively cover an opening of the case. The first sliding member is inserted through the door cover, and can be slidably mounted on one side surface of the door cover. The fastening member is slidably mounted on the other side surface of the door cover, and has at least one protrusion. The first sliding member is inserted through the fastening member, and the first sliding member and the second sliding member are connected to each other. When the first sliding member is in a retaining position, the second sliding member moves to be on the protrusion, and the first sliding member presses the door cover towards the second sliding member, so as to enhance waterproofness.
    Type: Application
    Filed: September 26, 2011
    Publication date: June 14, 2012
    Applicant: GETAC TECHNOLOGY CORPORATION
    Inventor: Chun-Ta Lin
  • Publication number: 20120119236
    Abstract: A semiconductor device having light-emitting diodes (LEDs) formed on a concave textured substrate is provided. A substrate is patterned and etched to form recesses. A separation layer is formed along the bottom of the recesses. An LED structure is formed along the sidewalls and, optionally, along the surface of the substrate between adjacent recesses. In these embodiments, the surface area of the LED structure is increased as compared to a planar surface. In another embodiment, the LED structure is formed within the recesses such that the bottom contact layer is non-conformal to the topology of the recesses. In these embodiments, the recesses in a silicon substrate result in a cubic structure in the bottom contact layer, such as an n-GaN layer, which has a non-polar characteristic and exhibits higher external quantum efficiency.
    Type: Application
    Filed: January 25, 2012
    Publication date: May 17, 2012
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chen-Hua Yu, Hung-Ta Lin, Wen-Chih Chiou, Ding-Yuan Chen, Chia-Lin Yu
  • Patent number: 8180308
    Abstract: A communication apparatus includes a radio frequency (RF) apparatus. The RF apparatus includes an amplifier, and a signal detection circuit. The amplifier receives RF signals and amplifies those signals. The amplifier has an adjustable gain value. The signal detection circuit detects whether a received signal is an out-of-band radar signal depending on the gain value of the amplifier and a characteristic of the received signal.
    Type: Grant
    Filed: February 18, 2009
    Date of Patent: May 15, 2012
    Assignee: Marvell International Ltd.
    Inventors: Sek Kin Neng, Yungping Hsu, Tsunglun Yu, Ming Ta Lin, Naveen-Kumar Arani