Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

Abstract: A high speed, wide-range, high-accuracy positioning stage device for eliminating errors due to deterministic elements such as variation of surface machining accuracy of a bar mirror and for preventing error accumulation due to indeterminate elements such as air fluctuations when switching between laser interferometers. When an X1 laser interferometer as a first position measurement device and an X2 laser interferometer as a second position measurement device are switched, at a place at which at least two position measurement devices are activated, when a value is handed over from the X1 laser interferometer, which was activated, to the X2 laser interferometer, which is to be activated, errors due to the effect of X-bar mirror flatness and air fluctuations are found by a correction function for the X-bar mirror and/or a table and the average of the measured values, and the value of the X2 laser interferometer is corrected by a correction device such as a calculation device.

Abstract: An alignment stage includes a first plane mirror (2A, 2B) which extends in two directions substantially perpendicular to each other in order to measure the position of a stage in the translation direction and the tilt of the stage in the direction of height, a first measurement unit (3A-1) which irradiates the plane mirror with a laser beam and measures the position of the stage in the translation direction by using reflection of the laser beam, a second measurement unit (3A-2) which irradiates the first plane mirror with a laser beam and measures the position by using reflection of the laser beam at a position vertically spaced apart from the first measurement unit in order to measure the tilt of the stage, a third measurement unit (14-1, 14-2, 14-3) which measures the tilt of the stage with respect to the surface of the surface plate in the direction of height, an arithmetic unit which calculates the error of the first plane mirror corresponding to each position of the stage on the basis of the difference b

Abstract: A polysilicon film evaluation apparatus is provided which enables objective automatic evaluation of the status of a polysilicon film, as formed to a high accuracy in a contact-free fashion.

Abstract: A second display panel having a lower luminance is combined with a first display panel having a higher luminance, forming a combined display panel. The entire surface of the combined display panel is covered with a dimming filter for ornamental purpose. Transparency of the dimming filter is enhanced in a wave-length region of the light emitted from the second panel to alleviate a brightness imbalance between the first and second panels. The transparency is enhanced also in another wave-length region corresponding to light complementary to the light emitted from the second panel, so that a color shift of the display of the first panel is avoided. Preferably, an electroluminescent display panel which emits light having a sharp peak in a specific wave-length region is used as the second panel.

Abstract: The state of a polysilicon film formed by excimer laser annealing an amorphous silicon film is to be evaluated. When the amorphous silicon film is annealed to form a polysilicon film, linearity or periodicity presents itself in the spatial structure of the film surface of the polysilicon film formed depending on the energy applied to the amorphous silicon during annealing. This linearity or periodicity is processed as an image and represented numerically from the image by exploiting the linearity or periodicity. The state of the polysilicon film is checked based on the numerical results.

Abstract: An end seal structure for a cable closure capable of ensuring insertion of cables different in diameter into a receiving casing for a cable connection without any sealing tape and substantially facilitating both assembling and disassembling thereof. A split cable spacer which is made of a vulcanized rubber composition of 0 to 10 in hardness or 40 to 90 (10−1 mm) in penetration, and of 500 to 2000% in elongation and 10 to 60 kgf/cm2 in tensile strength is arranged so as to be pressedly contacted with outer peripheries of cables. The split cable spacer is integrally provided with a plurality of seal ribs, which are arranged along the cable insertion passages in a manner to be opposite to each other and spaced from each other at predetermined intervals. A split end seal base is is provided with a hinge which permits the split end seal base to be pivotally split into two halves.

Abstract: A thin-film EL display panel which has excellent packageability, high reliability and stable performance characteristics, and which can prevent nonuniformity of brightness and color from occurring and a fabrication method thereof are provided. In the above thin-film EL display panel, two thin-film EL elements 1 and 2 formed by sequentially laminating first electrodes 12 and 22, first insulating layers, luminescent layers, second insulating layers and second electrodes 16 and 26 respectively on glass substrates 11 and 21 are laminated into position and connecting terminal portions 12a, 22a, 16a and 26a for connecting the first electrodes 12 and 22 and second electrodes 16 and 26 are formed on the edge portions of the substrates 11 and 21 of the thin-film EL elements 1 and 2.

Abstract: Disclosed is a method of producing an electroluminescent (EL) device having a CaGa2S4:Ce luminescent layer. The ratio of the X-ray diffraction peak intensity I2 for the (200) reflection of CaS to the X-ray diffraction peak intensity I1 for the (400) reflection of CaGa2S4 as appearing in the X-ray diffraction spectrum for the luminescent layer, I2/I1, is 0.1 or less. The amount of the impurity CaS in the luminescent layer is reduced. The EL device produces blue emission with high purity.

Abstract: A closure for cable connection which is capable of preventing deformation thereof, facilitating incorporation and setting of a cable therein, exhibiting increased safety and airtightness, and attaining sleeve assembling and cable connection with improved workability. A sleeve is provided therein with a cable connection mechanism including a cable clamp, a tension member holder, and a fiber cable storage casing in which a fiber connection section of cable fibers and an excessive fiber are received. The sleeve is provided on upper and lower portions of an inner surface thereof with connection fitment mounting sections, on which a frame-like connection fitment for mounting the cable connection mechanism thereon is detachably fittedly fixed.

Abstract: A transparent display panel such as an electroluminescent panel is overlapped on a part of a conventional instrument panel for use in an automobile. The overlapped display panel displays additional information such as navigation maps when required and is turned off under a normal driving condition. When the overlapped transparent display panel is turned off, the conventional instrument panel displays information such as a vehicle speed, an engine speed and so forth. In this situation, overall luminance on the combined display panel is made uniform throughout a whole surface including the area where the transparent display panel is overlapped. To realize the uniformity of luminance, brightness of back lamps for illuminating the instrument panel is adjusted or a filter having an adequate transparency is used. The combined display panel may be also made by combining a non-transparent display panel with a conventional instrument panel.

Abstract: Nitrous oxide contained in a gas is directly decomposed by contacting the gas with a catalyst layer composed mainly of tin (IV) oxide at a reaction temperature of not less than 250.degree. C., preferably not less than 300.degree. C. Particularly when a cobalt (II) compound is added to the catalyst layer, nitrous oxide can be effectively removed to a low concentration by contacting the gas with the catalyst layer at the reaction temperature of not less than 200.degree. C., preferably not less than 300.degree. C. By the present process, nitrous oxide which has not conventionally effectively removed can be reliably removed at a low cost. The present process can be applied for the removal of nitrous oxide in exhaust gases discharged from a sludge-incinerating furnace, a boiler fine powder coal combustion furnace, etc.

Abstract: The present invention provides a semiconductor physical-quantity sensor which can perform measurement of high accuracy without occurrence of deformation or displacement of a fixed electrode for vibration use even if voltage applied to the fixed electrode for vibration use is changed, and which can increase a dielectric breakdown voltage between the fixed electrode for vibration use and a substrate without varying a thickness of an insulative sacrificial layer or causing sacrificial-layer etching time to be affected. A semiconductor physical-quantity sensor according to the present invention forms an electrode-anchor portion on a sufficiently thick insulation film and causes dielectric breakdown voltage with a semiconductor substrate to be increased. In particular, the sufficiently thick insulation film is given by a LOCOS oxide film formed during sensor detection-circuit fabrication or separation of a diffusion electrode.

Abstract: In an EL device in which a blue light emitting material obtained by doping Ce as a luminescent center into CaGa.sub.X S.sub.Y host material is used for a luminescent layer, values of X and Y in the CaGa.sub.X S.sub.Y host material are set in ranges of 1.4.ltoreq.X.ltoreq.1.9, 2.9.ltoreq.Y.ltoreq.3.8. The blue light emitting material thus obtained has a new structure defined by the fact that an X-ray diffraction spectrum obtained by using Cu K.alpha. radiation as a X-ray source has at least one peak in diffraction angles of 13.5.+-.0.2 degree, 14.6.+-.0.2 degree and 25.7.+-.0.2 degree. The blue light emitting EL device has a luminance higher than that of a conventional EL device.

Abstract: A transparent display panel such as an electroluminescent panel is overlapped on a part of a conventional instrument panel for use in an automobile. The overlapped display panel displays additional information such as navigation maps when required and is turned off under a normal driving condition. When the overlapped transparent display panel is turned off, the conventional instrument panel displays information such as a vehicle speed, an engine speed so and so forth. In this situation, overall luminance on the combined display panel is made uniform throughout a whole surface including the area where the transparent display panel is overlapped. To realize the uniformity of luminance, brightness of back lamps for illuminating the instrument panel is adjusted or a filter having an adequate transparency is used. The combined display panel may be also made by combining a non-transparent display panel with a conventional instrument panel.

Abstract: In an electroluminescent element in which a first electrode, a first insulating layer, a luminescent layer, a second insulating layer and a second electrode are sequentially laminated on a substrate, the luminescent layer has a first and second luminescent portions which are located apart from each other. A color filter is provided above one of the first and second luminescent portions. The second electrode includes a first part electrode for activating the first luminescent portion and a second part electrode for activating the second luminescent portion. The color filter is formed so that a portion extending from a bottom face of the color filter is inserted into a gap between the first and second luminescent portions to surround an upper face and side faces of the one of the first and second luminescent portions.

Abstract: An electroluminescent device improved in brightness is disclosed. The electroluminescent device comprising sequentially stacked layers having an optically transparent material on at least the viewing side of the structure comprises a luminescent layer based on a Group II-III-VI compound host material with an element acting as a luminescent center added therein, wherein a Group II element having an ion radius differing from that of the Group II element constituting the compound host material is further added in the luminescent layer.

Abstract: A thin-film electroluminescent device includes dielectric layers having improved dielectric characteristics. The device is fabricated by forming a first transparent electrode layer of ITO, a first dielectric layer, a luminescent layer, a second dielectric layer, and a second transparent electrode layer of ITO in this order on an insulating substrate. Each of the two dielectric layers is a film constituted by TaSnON. That is, the film includes tantalum, tin, oxygen, and nitrogen.

Abstract: Fabrication of an electroluminescent device having a high-quality luminescent layer is disclosed. The device emits intense blue light. A first electrode layer, a first dielectric layer, the luminescent layer, a second dielectric layer, and a second electrode layer are successively formed on a glass substrate. At least the exit side of the device is made from an optically transparent material. A first gaseous source material of a group II element belonging to group II of the periodic table, a second gaseous source material of a group VIB element belonging to group VIB, and a third gaseous source material of an element forming the luminescent center of the luminescent layer are supplied into a reaction furnace through first, second, and third gas supply tubes, respectively, and caused to react with each other. Thus, the luminescent layer is formed by chemical vapor deposition. The first material acts as a base material from which the luminescent layer is formed.

Abstract: A nitrogen oxide absorbing material, comprising a hollandite-type complex oxide having main metal elements comprising minimally of aluminum and tin, or zinc and tin, and a method of using that nitrogen oxide absorbing material comprising the steps of contacting the nitrogen oxide absorbing material with a gas containing nitrogen oxides. The method of reducing the adsorbed nitrogen oxides on the nitrogen oxide absorbing material includes the steps of releasing the nitrogen oxides from the nitrogen oxide absorbing material, and of reducing the released nitrogen oxides with a three way catalyst or other nitrogen oxide reducing catalysts.