Abstract: A method of manufacturing a semiconductor crystalline layer comprising the following steps: a step of forming, on a single crystalline substrate composed of a semiconductor having a main face on <001> face and having a diamond-type crystal structure, an orientation flat face in which the direction of the intersection with the main face makes a predetermined angle relative to the direction <110> on the main face and which serves as a reference for defining the direction of arranging semiconductor chips formed on the substrate; a step of forming, on the main face of the substrate, an insulation layer at least a portion of which has an opening reaching the main face and which insulates the substrate at the region other than the opening; a step of forming a semiconductor layer composed of a polycrystalline or amorphous semiconductor on the surface of the opening and the insulation layer; a step of forming a reflectivity varying layer which is in the direction in parallel with or vertical to the inters

Abstract: A vertical MOS transistor having its channel length determined by the thickness of an insulating layer provided over a semiconductor substrate, rather than by the depth of a trench in which the transistor is formed. As a result, the characteristics of the transistor as relatively unaffected by doping and heat-treatment steps which are performed during formation. Also, the transistor may be formed so as to occupy very little surface area, making it suitable for application in high-density DRAMs.

Abstract: Disclosed herein is a process for producing a single crystal layer of a semiconductor device, which comprises the steps of providing an oxide insulator layer separated by an opening part for seeding, on a major surface of a single crystal semiconductor substrate of the cubic system, providing a polycrystalline or amorphous semiconductor layer on the entire surface of the insulator layer inclusive of the opening part, then providing a protective layer comprising at least a reflective or anti-reflection film comprising strips of a predetermined width, in a predetermined direction relative to the opening part and at a predetermined interval, the protective layer capable of controlling the temperature distributions in the semiconductor layer at the parts corresponding to the stripes or the parts not corresponding to the stripes, thereby completing a base for producing a semiconductor device, thereafter the surface of the base is irradiated with an energy beam through the striped reflective or anti-reflection film

Abstract: A thin film semiconductor device is formed by preparing a substrate, forming a pattern of metal thin film on the substrate, forming an insulating layer on the metal thin film, and forming a pattern of a semiconductor thin film active layer, which is self-aligned to the pattern of the metal thin film, by laser CVD.

Abstract: A stacked semiconductor device includes a first integrated circuit formed on the principal surface of a semiconductor layer and containing active elements, and a second integrated circuit formed on the first integrated circuit through an insulation layer and containing active elements. The second integrated circuit is formed on that part of the surface of the first integrated circuit which is exclusive of selected active elements, to establish an open space for heat dissipation.

Abstract: An apparatus for determining crystal orientation comprises: a polarizer for polarizing an incident light beam; a polarization analyzer for selecting light having a selected polarization direction in Raman scattered light; and a synchronizer for enabling synchronous rotations of the polarizer and the polarization analyzer.

Abstract: In a method for determining orientation of a crystal with polarization selective Raman microprobe spectroscopy, polarization angles of both light incident on the crystal and Raman scattered light emitted from the crystal are varied coincidently in ordinary circumstances and only either one of the polarization angles is varied in only case that intensity of the scattered beam does not change substantially in spite of the coincident variation of both the polarization angles.

Abstract: In a method of manufacturing a semiconductor device of a three-dimensional structure having a semiconductor substrate and another single crystal semiconductor layer formed thereon, the another single crystal semiconductor layer is prepared by melting a vapor-deposited amorphous or polycrystalline semiconductor layer by the energy of laser beams then solidifying and converting the layer into single crystals. For initiating the melting at selected regions of the layer, the layer is formed at the surface thereof with a silicon nitride film of a uniform thickness and a silicon nitride film with a thickness at the region corresponding to the selected region different from that of the remaining region. The region thicker or thinner than other region reflects the laser energy at different reflectivity thereby to provide a desired temperature distribution.

Abstract: A zone melting apparatus, in accordance with the present invention for monocrystallizing a semiconductor layer in a layered substance, includes: an upper elongated heater for zone melting of the semiconductor layer, the upper heater being disposed above and parallel to the semiconductor layer; a plurality of lower elongated heaters for heating the whole layered substance, the lower heaters being disposed in a plane below and parallel to the layered substance and the axis of each of the lower heaters being substantially perpendicular to the axis of the upper heater; a plurality of power suppliers for supplying electric power to the lower heaters; one or more temperature sensors for estimating the temperature of the layered substance; and a controller for controlling the power suppliers in response to the output of the temperature sensor(s), the controller making control so that the temperature of the central portion of the layered substance is slightly lower than that of the outer portions thereof.

Abstract: A method for manufacturing a semiconductor device, which comprises: a first process for producing a semiconductor layer of polycrystalline silicon or amorphous silicon on the surface of a substrate of insulator or a substrate made up by forming an insulating layer on a basic semiconductor; a second process for producing an island of semiconductor layer surrounded by dielectric materials from the semiconductor layer; a third process for producing a film of Si.sub.3 N.sub.4 on the island of semiconductor layer, or on a film of SiO.sub.2 formed on the island; a fourth process for removing the film of Si.sub.3 N.sub.4 at a predetermined region on the island; and a fifth process for irradiating with scanning an energy beam to the island of semiconductor layer so as to melt and recrystallize the island, thereby monocrystallizing or increasing the size of crystal grains at at least a partial region thereof.

Abstract: A method for fabricating a monocrystalline semiconductor layer on an insulating layer in the production of a semiconductor device wherein the location of grain boundaries is accurately controlled, thereby making the crystal orientation of the monocrystalline semiconductor layer uniform over a large area. An antireflection layer is formed above a polycrystalline of amorphous semiconductor layer formed on a main face of a monocrystalline semiconductor substrate which contacts the monocrystalline semiconductor substrate through windows formed in a thick insulating layer. The antireflection layer includes a first portion which covers all of the area of the polycrystalline or amorphous semiconductor layer above the windows, and a second portion, which has the form of a grid composed of parallel lines extending from the first portion in the direction of the crystallographic axis of the monocrystalline semiconductor substrate and partially covering a second area between the first areas.

Abstract: A method of manufacturing MOS field-effect transistors using a wafer (40) having a polycrystal or amorphous semiconductor layer formed on an insulator comprises a step in which an energy beam (44) is applied to the semiconductor layer by scanning the beam intermittently and correlatively to the wafer so as to heat locally the semiconductor layer whereby only a plurality of portions (41) contained in the semiconductor layer and assigned for forming channel regions of MOS field-effect transistors are monocrystallized or the crystalline grains in the above described positions are made large. According to the present invention, a strain occurring in a recrystallized semiconductor can be mitigated by the selective heating.

Abstract: A method for producing an impurity containing semiconductor substrate includes depositing an impurity on selected portions of the substrate by placing a charge on the substrate and converting a gaseous impurity containing atmosphere into a plasma. The impurity may then be diffused into the substrate to a controlled and shallow depth by employing a laser or the like to selectively irradiate the impurity.

Abstract: A cutting and chamfering apparatus for opposite ends of a tubular member including a cutting and chamfering support for holding horizontally the member, two tables provided respectively at opposite ends of the support, and a cutting machine and chamfering machine mounted in combination on each of the tables.

Abstract: A process for producing a semiconductor device includes the step of locally heating and fusing an island of a polycrystalline or amorphous semiconductor layer which is formed on and surrounded by an insulator. In the process, at least one ridge is formed on the underlying insulator before the formation of the semiconductor layer.

Abstract: A cleaning apparatus for use in pickling facilities for tubular members such as zirconium or zirconium alloy tubes. The apparatus includes a travelling crane for conveying and loading the tubular members from one cleaning tank to another, a pair of endless wrapping connectors such as endless chains spacedly and circulatably provided in at least one tank, for example, in a first cleaning tank filled with slightly warm water below the level of its cleaning fluid, and a plurality of feed claws provided with an interval therebetween on each of the endless wrapping connectors along the length of the same so as to prevent the tubular members from contacting one another during cleaning treatment. Thus, development of stain or physical damage such as scratches or dents is eliminated or minimized. It is possible to tentatively stock the tubular members on the endless wrapping connectors so as to perform a smooth and continuous pickling and cleaning operation of such tubular members.

Abstract: An apparatus for continuously pickling the outer surfaces of hermetically plugged tubular members is described. The apparatus includes a plurality of liquid tanks which separately contain different pickling liquids and define through-holes in their respective front and rear walls on at least one common longitudinal line to permit the successive passage of the tubular members therethrough while rotating them around their respective longitudinal axes. The apparatus includes a cleaning tank and cleaning brush unit provided sequentially before the liquid tanks. The cleaning tank includes at least one ultrasonic cleaning oscillator and defines through-holes in the front and rear walls thereof for allowing said tubular members to pass through the cleaning tank and the brush unit. Since any oil, grease or dust can be completely removed by the cleaning tank and brush unit prior to pickling, it is possible to obtain tubular members having excellent outer surface quality.

Abstract: An apparatus for conveying tubular members along a plurality of treatment liquid tanks in pickling facilities. The apparatus includes a pair of guide rails and a travelling car adapted to reciprocate on the guide rails. The travelling car includes at least one pair of tube-supporting hooks which can be reciprocated upwardly and downwardly and turned between positions parallel to the rails and other positions perpendicular to the rails. The tube-supporting hooks can be lowered or raised independently so as to support the tubular members aslant near the treatment liquid level in each of the treatment liquid tanks, thereby allowing immersion of the tubular members into the treatment liquid or retraction of the tubular members out of the treatment liquid without forming considerable air bubbles in the liquid. Since such bubbles are known to develop stains on the tubular members, tubular members of high surface quality can be obtained.

Abstract: A magnetic recording medium comprises a first magnetic layer containing magnetite or a cobalt doped magnetite which is coated on a non-magnetic substrate; and a second magnetic layer coating a cobalt doped .gamma.-Fe.sub.2 O.sub.3 which is coated on said first magnetic layer.The magnetic recording medium has a high recording sensitivity, a high dynamic range, a less output fluctuation and especially superior sensitivity in low frequency band and superior maximum output level without a deterioration of transfer characteristics.