Abstract: Bonding system for bonding a second article to a first article, comprising an activation treatment device that comprises an object supporter that supports objects comprising the second article, and a particle beam source that activates a bonding surface of the second article by irradiating the objects with a particle beam, the objects being set on one treatment surface without being opposed to each other, followed by performing activation treatment by the particle beam source; and a bond device that brings the second article, of which the bonding surface is activated by the activation treatment device, into contact with the first article, to thereby bond the second article to the first article, wherein the object supporter supports the objects in a posture in which a portion formed of a plurality of kinds of materials comprising the bonding surface of the second article in the objects is exposed to the particle beam source.

Abstract: Bonding system that bonds each of a plurality of second articles to a first article, wherein each of the plurality of second articles is a chip comprising an uneven portion on a circumference closer to a bonding surface to be bonded to the first article, the bonding system comprises: a device for supplying a second article that supplies the plurality of second articles; a bond device that bonds the plurality of second articles to the first article by bringing the plurality of second articles into contact with the first article; and a device for transporting a second article that transports, to the bond device, at least one of the plurality of second articles supplied from the device for supplying a second article, and the device for transporting a second article comprises a holder for holding a second article that holds the uneven portion of the at least one second article.

Abstract: A bonding method for bonding two substrates (W1, W2) includes: a heat treatment process of heating a bonding surface to be bonded to each other of each of the two substrates (W1, W2) to a temperature higher than 60° C. in a reduced-pressure atmosphere; an activation treatment process of activating the bonding surface of each of the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the heat treatment process; and a bonding process of bonding the two substrates (W1, W2) in a state of maintaining the reduced-pressure atmosphere after the activation treatment process. In the heat treatment process, the state of heating the bonding surface of each of the two substrates (W1, W2) to a temperature higher than 60° C. may be maintained for 30 seconds or more in a state of maintaining the reduced-pressure atmosphere. The gas pressure in the heat treatment process may be 10?2 Pa or less.

Abstract: A substrate bonding method for bonding two substrates includes an activation treatment step of, by subjecting at least one of bonding surfaces to be bonded to each other of respective ones of the two substrates to at least one of reactive ion etching using nitrogen gas and irradiation of nitrogen radicals, activating the bonding surface, a gas exposure step of, after the activation treatment step, exposing the bonding surfaces of the two substrates to gas containing water within a preset standard time, and a bonding step of bonding the two substrates that have the bonding surfaces activated in the activation treatment step.

Abstract: A joint structure includes a first member, a second member and a metal joint layer. The first member has including a first surface and is made of material having one of copper, copper alloy, aluminum, or aluminum alloy. The second member includes a second surface that faces the first surface of the first material. The metal joint layer includes a gold joint layer made of material having gold or gold alloy and is disposed between the first surface of the first material and the second surface of the second material. A thickness of the metal joint layer is smaller than flatness of the first surface of the first material and flatness of the second surface of the second material. Fluorine is dispersed inside at least the gold joint layer included in the metal joint layer.

Abstract: The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

Abstract: The substrate joining method is a substrate joining method for joying two substrates, including a hydrophilic treatment step of hydrophilizing at least one of respective joint surfaces of the two substrates that are to be joined to each other and a joining step of joining the two substrates after the hydrophilic treatment step. The hydrophilic treatment step includes a step of performing a N2 RIE treatment to perform reactive ion etching using N2 gas on the joint surfaces of the substrates and a step of performing a N2 radical treatment to irradiate the joint surfaces of the substrates with N2 radicals after the step of performing the N2 RIE treatment.

Abstract: A method of bonding transparent substrates is provided, comprising: preparing a pair of transparent substrates; forming a thin film of aluminum oxide by a sputtering method, on a bonding surface of the transparent substrates; contacting the aluminum oxide thin films in the air to bond the pair of transparent substrates; and heating the bonded pair of transparent substrates.

Abstract: A joint structure includes a first member, a second member and a metal joint layer. The first member has including a first surface and is made of material having one of copper, copper alloy, aluminum, or aluminum alloy. The second member includes a second surface that faces the first surface of the first material. The metal joint layer includes a gold joint layer made of material having gold or gold alloy and is disposed between the first surface of the first material and the second surface of the second material. A thickness of the metal joint layer is smaller than flatness of the first surface of the first material and flatness of the second surface of the second material. Fluorine is dispersed inside at least the gold joint layer included in the metal joint layer.

Abstract: A chip bonding system including an activation treatment device including a frame holder and a particle beam source that irradiates a sheet, to which a chip held by the frame holder is stuck, with a particle beam, to thereby activate a bonding surface of the chip; and a bonding device that brings the chip, of which the bonding surface is activated by the activation treatment device, into contact with a substrate, to thereby bond the chip to the substrate. The frame holder supports a holding frame in a posture in which one side, to which the chip is stuck, in the sheet, of the holding frame that holds the sheet TE, which is formed of a resin, and to which the chip is stuck, is exposed to the particle beam source.

Abstract: Methods of bonding substrates are provided, including forming a thin film of a metal oxide on a bonding surface of both or either of a pair of substrates, at least one of which is a transparent substrate, and contacting the bonding surfaces of the pair of substrates with each other via the thin film of the metal oxide.

Abstract: A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

Abstract: [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Abstract: [Problem] To provide a technology that allows a film or glass to be bonded to a transport substrate and to be easily separated during the manufacture of a substrate. [Solution] Provided is a method for manufacturing a substrate having an electronic device formed on a surface, the method comprising a formation step for forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate; a bonding step for pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and a separation step for separating the substrate and the transport substrate.

Abstract: The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

Abstract: A substrate bonding apparatus includes a vacuum chamber, a surface activation part for activating respective bonding surfaces of a first substrate and a second substrate, and stage moving mechanisms for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates. In order to activate the bonding surfaces in the vacuum chamber, the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates.

Abstract: A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).

Abstract: [Problem] To provide a technology that allows a film or glass to be bonded to a transport substrate and to be easily separated during the manufacture of a substrate. [Solution] Provided is a method for manufacturing a substrate having an electronic device formed on a surface, the method comprising a formation step for forming an inorganic material layer on at least one of a bonding surface by which the substrate having an electronic device formed on a surface is to be bonded to a transport substrate, and a bonding surface on the transport substrate for transporting the substrate; a bonding step for pressing the substrate and the transport substrate against each other and bonding the substrate and the transport substrate by the inorganic material layer; and a separation step for separating the substrate and the transport substrate.

Abstract: [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Abstract: A substrate bonding apparatus (100) includes a vacuum chamber (200), a surface activation part (610) for activating respective bonding surfaces of a first substrate (301) and a second substrate (302), and stage moving mechanisms (403, 404) for bringing the two bonding surfaces into contact with each other, to thereby bond the substrates (301, 302). In order to activate the bonding surfaces in the vacuum chamber (200), the bonding surfaces are irradiated with a particle beam for activating the bonding surfaces, and concurrently the bonding surfaces are also irradiated with silicon particles. It is thereby possible to increase the bonding strength of the substrates (301, 302).