Abstract: [Problem] The aim of the invention is to provide a method of sealing an electronic element such as an organic EL element using a normal temperature bonding method that enables bonding at low temperature and in which permeation of external gases such as hydrogen or oxygen through the sealed section (dam) formed by the organic material, or the junction interface of the sealed section and a cover substrate is suppressed.

Abstract: [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.

Abstract: [Problem] The aim of the invention is to provide a method of sealing an electronic element such as an organic EL element using a normal temperature bonding method that enables bonding at low temperature and in which permeation of external gases such as hydrogen or oxygen through the sealed section (dam) formed by the organic material, or the junction interface of the sealed section and a cover substrate is suppressed.

Abstract: The present invention provides a method for firmly and inexpensively bonding at low temperature a polymer film to another polymer film or to a glass substrate without the use of an organic adhesive. A method for bonding a polymer film includes a step (S1) for forming a first inorganic material layer on part or all of a first polymer film; a step (S3) for forming a second inorganic material layer on part or all of a second polymer film; a step (S2) for surface-activating the surface of the first inorganic material layer by bombarding with particles having a predetermined kinetic energy; a step (S4) for surface-activating the surface of the second inorganic material layer by bombarding with particles having a predetermined kinetic energy; and a step (S5) for abutting the surface-activated surface of the first inorganic material layer against the surface-activated surface of the second inorganic material layer and bonding the first polymer film and second polymer film together.

Abstract: [Problem] Provided is a technique for bonding chips efficiently onto a wafer to establish an electrical connection and raise mechanical strength between the chips and the wafer or between the chips that are chips laminated onto each other in the state that resin and other undesired residues do not remain on a bond interface therebetween.

Abstract: The present invention ensures a good bonding state between the electrode terminals of electronic components and the electrodes of a substrate, and achieves an increase in productivity and a downsizing of the substrate. The present invention includes: an applying step of applying a metal fine powder paste on each of multiple electrodes that are provided on a substrate; a component placing step of placing multiple electronic components with different heights, on the multiple electrodes, respectively; an organic film placing step of placing an organic film on the multiple electronic components; an organic film compressing step of applying a first pressure to the electronic component side with a pressing member and equalizing the height of the organic film; and a bonding step of applying a second pressure to the electronic component side with a compressing member on heating for a predetermined time and sintering the metal fine powder paste.

Abstract: An element pressing apparatus includes: a base casing having first and second bases couplable to or separable from each other to form an arrangement space where a board and a plurality of electronic components having different heights are arranged while the first and second bases are coupled to each other; oil encapsulated in the arrangement space; an oil seal member deformed depending on a pressure of the oil; and a hydraulic pressure change portion that changes the pressure of the oil, wherein the pressure of the oil changes by the hydraulic pressure change portion to press the oil seal member to a plurality of electronic components and press the electrode terminals against the electrodes when the board and a plurality of electronic components are arranged in the arrangement space by positioning and placing each of the electrode terminals on each of the electrodes.

Abstract: An element pressing apparatus includes: a base casing having first and second bases couplable to or separable from each other to form an arrangement space where a board and a plurality of electronic components having different heights are arranged while the first and second bases are coupled to each other; oil encapsulated in the arrangement space; an oil seal member deformed depending on a pressure of the oil; and a hydraulic pressure change portion that changes the pressure of the oil, wherein the pressure of the oil changes by the hydraulic pressure change portion to press the oil seal member to a plurality of electronic components and press the electrode terminals against the electrodes when the board and a plurality of electronic components are arranged in the arrangement space by positioning and placing each of the electrode terminals on each of the electrodes.

Abstract: The present invention ensures a good bonding state between the electrode terminals of electronic components and the electrodes of a substrate, and achieves an increase in productivity and a downsizing of the substrate. The present invention includes: an applying step of applying a metal fine powder paste on each of multiple electrodes that are provided on a substrate; a component placing step of placing multiple electronic components with different heights, on the multiple electrodes, respectively; an organic film placing step of placing an organic film on the multiple electronic components; an organic film compressing step of applying a first pressure to the electronic component side with a pressing member and equalizing the height of the organic film; and a bonding step of applying a second pressure to the electronic component side with a compressing member on heating for a predetermined time and sintering the metal fine powder paste.

Abstract: [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: [Problem] To provide a substrate bonding technique having a wide range of application. [Solution] A silicon thin film is formed on a bonding surface, and the interface with the substrate is surface-treated using energetic particles/metal particles.

Abstract: A needle crystal in the form of a capsule comprising fullerene molecules such as C60 and a C60 platinum derivative and having a hollow portion (a fullerene shell capsule) is provided. The fullerene shell capsule which has been prepared by the liquid-liquid interface precipitation method, which comprises (1) a step in which a solution containing a first solvent dissolving fullerene therein is combined with a second solvent in which the solubility of fullerene is lower than in the above first solvent; (2) a step in which a liquid-liquid interface is formed between the above solution and the above second solvent; and (3) a step in which a carbon fine wire is precipitated on the above liquid-liquid interface, has a novel characteristic in its form and can be used as a catalyst supporting material, a raw material for a plastic composite material, a storage material for gas such as hydrogen, a catalyst for fuel cell, or the like.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding not requiring a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded requires a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: The invention presents a fullerene derivative fine wire composed of basic component unit of fullerene derivative, being made of acicular crystal of fullerene derivative, as a fine wire showing high crystallinity and semiconductor performance.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: A practical bonding technique is provided for solid-phase room-temperature bonding which does not require a profile irregularity of the order of several nanometers, in which a high-vacuum energy wave treatment and continuous high-vacuum bonding are not required. Since an adhering substance layer is thin immediately after a surface activating treatment using an energy wave, a bonding interface is spread by crushing the adhering substance layer to perform bonding, so that a new surface appears on a bonding surface, and objects to be bonded are bonded together. In order to crush the adhering substance layer more easily, a bonding metal of a bonding portion of the object to be bonded needs to have a low hardness. According to the results of various experiments conducted by the present inventors, it was found that the hardness of the bonding portion which is a Vickers hardness of 200 Hv or less is particularly effective for room-temperature bonding.

Abstract: The present invention relates to a semiconductor device in which electrodes formed on a semiconductor chip and electrodes formed on a wiring board are electrically connected via projecting elastic electrodes, and further relates to a mounting method of reducing a pressure applied to electrodes formed on a substrate or underlying wirings when a semiconductor chip and a wiring board are bonded.

Abstract: A substrate bonding method for mutually bonding substrates, has a first radiation step for irradiating the surfaces of the individual substrates with an oxygen particle beam, a second radiation step for irradiating the surfaces of the individual substrate with a nitrogen particle beam simultaneously with or subsequently to the first radiation step, and a step for stacking the individual substrates and bringing the surfaces thereof into close contact. Particularly, the substrates which have been irradiated first with an oxygen plasma and subsequently with a nitrogen plasma are stacked and bonded.