Abstract: A method for dehydrating an evaporator of an air conditioner of a vehicle is provided to drive a blower motor depending on the humidity of the evaporator while monitoring a dry state of the evaporator, thus allowing the evaporator to be appropriately dried and preventing a problem from being caused by the discharge of a battery, therefore minimizing an odor generated by the air conditioner of the vehicle owing to effective drying of the evaporator of the air conditioner, and consequently considerably improving the marketability of the vehicle.

Abstract: Provided are a transportation device for transporting heavy plate-shaped cargoes such as thick plate products, and a transportation system using the transportation device. The transportation device may include: a device body unit; a device moving unit provided on the device body unit to move the transportation device; and a cargo loading unit provided on the device body unit for self-loading cargo. The transportation device is capable of rapidly loading and transporting plate-shaped heavy objects such as thick plate products of an iron mill without using additional lifting/unloading apparatuses and heavy pallets (cassettes) for markedly decreasing the total transportation (distribution) time necessary for lifting, transportation, and unloading of cargo, providing efficient transportation environments, improving productivity, and decreasing costs.

Abstract: An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Abstract: Discussed are a transparent display device and a manufacturing method thereof, which may reduce diffraction grating. The transparent display device includes gate lines and data lines formed on a substrate and crossing each other with a gate insulator film interposed therebetween to define pixel areas, common lines formed on the substrate and being parallel to the gate lines, thin film transistors formed in the respective pixel areas, pixel electrodes connected to the thin film transistors, and common electrodes connected to the common lines and alternating with the pixel electrodes. In the transparent display device, blocks between the pixel electrodes and the common electrodes are reduced or increased in width by an equal difference with increasing distance from both edges of each pixel area proximate to the data lines or by an equal difference with decreasing distance to the center of the pixel area.

Abstract: Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.

Abstract: A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Abstract: A pixel array includes an array of pixels to receive light, a first pixel to be blocked from receiving the light, and a circuit to adjust signals output from pixels in the array based on a signal from the first pixel. The signals output from the pixels in the array include a first error value. The circuit reduces the first error value in the signals from the pixels in the array based on the signal from the first pixel. The circuit may also reduce a second error value in the signals output from the pixels in the array based on a signal from a second pixel. The first and second pixels may be outside of the pixel array. The first and second error values may be storage diode leakage value and a dark current value.

Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Abstract: The present invention relates to Corynebacterium sp. that is transformed with an Escherichia sp.-derived fructokinase gene to express fructokinase showing a sufficient activity of converting fructose into fructose-6-phosphate, thereby preventing unnecessary energy consumption, and a method for producing L-amino acids using the strain. The transformed Corynebacterium sp. of the present invention is able to express fructokinase from the Escherichia-derived fructokinase gene to prevent unnecessary energy consumption during fructose metabolism, leading to more cost-effective production of L-amino acids. Therefore, it can be widely used for the effective production of L-amino acids.

Abstract: Pixel arrays of an image sensor that include a first pixel and a second pixel adjacent the first pixel are provided. The first pixel may include a first photoelectric conversion device, a first charge storage device, a first floating diffusion node and a first transfer gate. The second pixel may include a second photoelectric conversion device, a second charge storage device, a second floating diffusion node and a second transfer gate. The pixel arrays may also include a storage gate on both the first charge storage device and the second charge storage device. The storage gate may have a unitary structure.

Abstract: A method for fabricating a semiconductor device includes forming a silicon-containing layer; forming a metal-containing layer over the silicon-containing layer; forming an undercut prevention layer between the silicon containing layer and the metal containing layer; etching the metal-containing layer; and forming a conductive structure by etching the undercut prevention layer and the silicon-containing layer.

Abstract: An image sensor capable of boosting a voltage of a floating diffusion node is provided. The image sensor includes a floating diffusion node and a storage element which are in a semiconductor substrate. The image sensor includes a first light-shielding material formed over the floating diffusion node, and a second light-shielding material formed over the storage diode. The second light-shielding material is separated from the first light-shielding material. The image sensor also includes a first voltage supply line configured to apply a first voltage to the first light-shielding material and a second voltage supply line configured to apply a second voltage lower than the first voltage to the second light-shielding material.

Abstract: Provided are an image sensor and a method of manufacturing the same. The method may include forming a photo-electric conversion region and a charge storage region in a semiconductor layer; forming a transistor on a front surface of the semiconductor layer; forming a recess by etching a portion of the semiconductor layer between the charge storage region and a rear surface of the semiconductor layer; and forming on a bottom surface of the recess a shield film that blocks light incident on the charge storage region.

Abstract: A method of processing signals from an image sensor outputting signals from rows of pixels in the image sensor having optical signals, outputting signals from rows of pixels in the image sensor not having optical signals, and correcting the signals from the rows of pixels having optical signals based on the signals corresponding to the rows of pixels not having optical signals.

Abstract: A pixel array includes an array of pixels to receive light, a first pixel to be blocked from receiving the light, and a circuit to adjust signals output from pixels in the array based on a signal from the first pixel. The signals output from the pixels in the array include a first error value. The circuit reduces the first error value in the signals from the pixels in the array based on the signal from the first pixel. The circuit may also reduce a second error value in the signals output from the pixels in the array based on a signal from a second pixel. The first and second pixels may be outside of the pixel array. The first and second error values may be storage diode leakage value and a dark current value.