Abstract: A liquid crystal display device includes: first and second substrates facing and spaced apart from each other, each of the first and second substrates having an image-displaying sub pixel and a viewing angle-adjusting sub pixel; a thin film transistor corresponding to each of the image-displaying sub pixel and the viewing angle-adjusting sub pixel; a liquid crystal display layer between the first and second substrates, the liquid crystal layer having a negative dielectric constant anisotropy; a first field distortion means in the image-displaying sub pixel; and a second field distortion means in the viewing angle-adjusting sub pixel.

Abstract: A liquid crystal display device includes: first and second substrates facing and spaced apart from each other, each of the first and second substrates having an image-displaying sub pixel and a viewing angle-adjusting sub pixel; a thin film transistor corresponding to each of the image-displaying sub pixel and the viewing angle-adjusting sub pixel; a liquid crystal display layer between the first and second substrates, the liquid crystal layer having a negative dielectric constant anisotropy; a first field distortion means in the image-displaying sub pixel; and a second field distortion means in the viewing angle-adjusting sub pixel.

Abstract: There is provided an alphabetic character input apparatus including a data storage unit configured to store therein alphabetic character assignment information of each of keys in an alphabetic character input section and a program for inputting an alphabetic character; a key input unit configured to detect a key manipulation signal of a user to select an alphabetic character assigned to each of the keys; and a memory configured to store therein alphabetic character assignment information of a key corresponding to a key manipulation signal lately input by the user such that the alphabetic character assignment information of the key is assigned to a clone key.

Abstract: Provided are an LCD device that can control a viewing angle freely and a manufacturing method thereof. The LCD device includes a first substrate, a second substrate, and an LC layer interposed between the first and second substrates. The LCD device further includes red, green, blue, and viewing angle controlling subpixels. These subpixels are driven in a VA mode. The red, green, and blue subpixels have a transflective structure. The viewing angle controlling subpixel has a transmissive or transflective structure.

Abstract: An air-conditioner for a vehicle, may include a casing having an upper outlet and a lower outlet, with an air flow space defined in the casing and including an upper space and a lower space to guide air to the upper outlet and/or the lower outlet, an evaporator installed in the casing and selectively communicating with the upper outlet through the upper space, and a distributing partition wall to partition the lower space into a receiving space to receive a heating member therein and selectively communicate with the upper space and at least a partitioned space to communicate the heating member with the lower outlet, thus guiding the air to a side portion of the casing.

Abstract: A method for forming a pattern in a semiconductor device includes forming an etch target layer comprising metal over a substrate. A hard mask pattern is formed over the etch target layer. The etch target layer is etched to form a pattern such that a line width of the etch target layer is smaller than a line width of the hard mask pattern.

Abstract: A method for fabricating a semiconductor device includes forming a gate insulation layer over a substrate, sequentially forming a silicon layer and a metal layer over the gate insulation layer, performing a first gate etching process to etch the metal layer using a gate hard mask layer, formed on the metal layer, as an etch barrier, and then partially etch the silicon layer, thereby forming a first pattern, performing a second gate etching process to partially etch the silicon layer, thereby forming an undercut beneath the metal layer, forming a capping layer on both sidewalls of the first pattern including the undercut, performing a third gate etching process to etch the silicon layer to expose the gate insulation layer using the gate hard mask layer and the capping layer as an etch barrier, thereby forming a second pattern, and performing a gate re-oxidation process.

Abstract: A method for fabricating a semiconductor device includes forming a polysilicon layer, a barrier metal layer, and a conductive layer over a substrate, forming gate hard masks over the conductive layer, etching the conductive layer and the barrier metal layer using the gate hard masks to form barrier metal electrodes and metal gate electrodes having a line width smaller than that of the gate hard masks, etching the polysilicon layer to form gate patterns, each gate pattern including a stack structure of a polysilicon electrode, the barrier metal electrode, the metal gate electrode, and the gate hard mask, forming a gate spacer over the surface profile of the substrate structure, forming an insulation layer over the gate spacer, etching the insulation layer to form a contact hole between the gate patterns and burying a conductive material over the contact hole to form a landing plug contact.

Abstract: Provided are an apparatus for evaluating an indirect loss caused by a ubiquity effect by provision of a universal service, and a method thereof. The apparatus includes a first data storage unit for storing population statistics-related data, a second data storage unit for storing universal service offer-related data, a control unit for reading out and delivering required data from the first and second data storage units to a ubiquity loss calculation unit and controlling the ubiquity loss calculation unit, the ubiquity loss calculation unit for calculating a ubiquity loss of each evaluation object district by using the required data from the control unit, and a third data storage unit for storing the ubiquity loss of each evaluation object district calculated in the ubiquity loss calculation unit.

Abstract: Disclosed is an image forming apparatus and printing media cassette thereof. The loading position of a loading plate of the printing media cassette can be varied based on the printing medium size by a capacity adjustment unit. The capacity adjustment unit may operate in association with the size adjustment guide so as to define the loading position based on the size of the printing media. The image forming apparatus can include the printing media cassette detachably received in the body thereof.

Abstract: The present invention relates to non-activated Wnt inhibition polypeptides (WIPs) containing: (a) a protein transduction domain (PTD) which enables said WIPs to permeate a cell membrane without the aid of a cell membrane receptor; and (b) a Wnt antagonist domain which is inactive by itself, but is activated in mammalian cells and then secreted out of the cells to function to inhibit Wnt signal transduction. Also, the invention relates to a method for preparing said non-activated WIPs, and a pharmaceutical composition containing said WIPs as active ingredients. Said non-activated WIPs can be produced in large quantities through the culture of bacteria such as E coli., and are biochemically inactive before being administered into the human body, and thus the production cost thereof is only one several tenths of that of previously known active proteins (sFRPs, DKKs, etc.

Abstract: A liquid crystal display device includes: first and second substrates facing and spaced apart from each other, each of the first and second substrates having an image-displaying sub pixel and a viewing angle-adjusting sub pixel; a thin film transistor corresponding to each of the image-displaying sub pixel and the viewing angle-adjusting sub pixel; a liquid crystal display layer between the first and second substrates, the liquid crystal layer having a negative dielectric constant anisotropy; a first field distortion means in the image-displaying sub pixel; and a second field distortion means in the viewing angle-adjusting sub pixel.

Abstract: Example embodiments relate to a method of manufacturing a capacitor and a method of manufacturing a semiconductor device using the same. Other example embodiments relate to a method of manufacturing a capacitor having improved characteristics and a method of manufacturing a semiconductor device using the same. In a method of manufacturing a capacitor having improved characteristics, an insulation layer, including a pad therein, may be formed on a substrate. An etch stop layer may be formed on the insulation layer. A mold layer may be formed on the etch stop layer. The mold layer may be partially etched by a first etching process to form a first contact hole exposing the etch stop layer. The mold layer may be partially etched by a second etching process to form a second contact hole. The exposed etch stop layer may be etched by a third etching process to form a third contact hole exposing the pad.

Abstract: Provided are a backlight unit and a display device having the same. The backlight unit includes a case having an opening, at least one lamp assembly disposed on a side surface of the case and including a light source, an optical transreflective unit on the case, the optical transreflective unit transmitting a portion of first light passing through the opening and reflecting a portion of second light generated from the light source, and an optical sheet including a first diffusion unit on the optical transreflective unit.

Abstract: Provided are an LCD device that can control a viewing angle freely and a manufacturing method thereof. The LCD device includes a first substrate, a second substrate, and an LC layer interposed between the first and second substrates. The LCD device further includes red, green, blue, and viewing angle controlling subpixels. These subpixels are driven in a VA mode. The red, green, and blue subpixels have a transflective structure. The viewing angle controlling subpixel has a transmissive or transflective structure.

Abstract: A method for forming a pattern in a semiconductor device includes forming an etch target layer comprising metal over a substrate. A hard mask pattern is formed over the etch target layer. The etch target layer is etched to form a pattern such that a line width of the etch target layer is smaller than a line width of the hard mask pattern.

Abstract: Provided are an apparatus for evaluating an indirect loss caused by a ubiquity effect by provision of a universal service, and a method thereof. The apparatus includes a first data storage unit for storing population statistics-related data, a second data storage unit for storing universal service offer-related data, a control unit for reading out and delivering required data from the first and second data storage units to a ubiquity loss calculation unit and controlling the ubiquity loss calculation unit, the ubiquity loss calculation unit for calculating a ubiquity loss of each evaluation object district by using the required data from the control unit, and a third data storage unit for storing the ubiquity loss of each evaluation object district calculated in the ubiquity loss calculation unit.

Abstract: Example embodiments relate to a method of manufacturing a capacitor and a method of manufacturing a semiconductor device using the same. Other example embodiments relate to a method of manufacturing a capacitor having improved characteristics and a method of manufacturing a semiconductor device using the same. In a method of manufacturing a capacitor having improved characteristics, an insulation layer, including a pad therein, may be formed on a substrate. An etch stop layer may be formed on the insulation layer. A mold layer may be formed on the etch stop layer. The mold layer may be partially etched by a first etching process to form a first contact hole exposing the etch stop layer. The mold layer may be partially etched by a second etching process to form a second contact hole. The exposed etch stop layer may be etched by a third etching process to form a third contact hole exposing the pad.

Abstract: The present invention provides a biochip which includes: a substrate having a center hole at a central portion, an biomaterial region aranged at a circumferential portion of the top surface of the substrate; and an information region formed on the substrate between the biomaterial region and the center hole and having the information on the biomaterials. In the method for detecting biomaterials using the biochip, a disk-type upper substrate is placed on the top surface of the biochip, a sample is put between the disk-type upper substrate and the biochip, the reaction between the sample solution and the biomaterial of the biochip is accelerated by rotating the biochip, and the detection unit analyzes the biomaterial by receiving the light emitted from the biomaterials, thereby making it possible to analyze the biomaterial of the sample solution.

Abstract: Disclosed are biochips having a high detecting sensitivity with readiness in fabrication of microarray, and a method for fabricating the same, in which a solid support wound with fibers is immersed in a solution containing biomolecules to immobilize the biomolecules onto the fiber, and the individual fibers with the biomolecules immobilized thereon are straightened and arranged. The arranged fibers are embedded with a defined material and cut in a direction perpendicular to the lengthwise arrangement direction of the fibers to obtain thin chips. The chips are placed on a substrate to remove the material used for embedding and thereby remain fibers with the immobilized biomolecules on the substrate. This biochip fabrication method immobilizes a great number of biomolecules onto the fibers having a large surface area to enhance the detection sensitivity and allows production of a great number of substrates with an array of biomolecules immobilized simultaneously.