Abstract: A thin film transistor and method of fabricating the same are provided. In the thin film transistor, a seed or a grain boundary exists in a semiconductor layer pattern but not in a junction region. The method includes forming a semiconductor layer pattern. Forming the semiconductor layer pattern includes: forming and patterning a first capping layer on an amorphous silicon layer; forming a second capping layer on the first capping layer pattern; forming a metal catalyst layer on the second capping layer; diffusing the metal catalyst; and crystallizing the amorphous silicon layer to form a polysilicon layer. Therefore, it is possible to prevent that a trap is generated in the junction region, thereby obtaining improved and uniform characteristics of the device.

Abstract: A substrate processing apparatus that forms thin films on a plurality of substrates and thermally processes the substrates, by uniformly heating the substrates. The substrate processing apparatus includes a processing chamber, a boat in which substrates are stacked, an external heater located outside of the processing chamber, a feeder to move the boat into and out of the processing chamber, a lower heater located below the feeder, and a central heater located in the center of the boat.

Abstract: Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode (OLED) display device including the same. The thin film transistor includes a substrate; a semiconductor layer disposed on the substrate and including a channel region; source/drain regions including ions and an offset region; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; a first insulating layer disposed on the gate electrode; a second insulating layer disposed on the first insulating layer; and source/drain electrodes disposed on the second insulating layer, and electrically connected to the source/drain regions of the semiconductor layer, respectively. The sum of thicknesses of the gate insulating layer and the first insulating layer that are on the source/drain regions is less than the vertical dispersion depth of the ions included in the source/drain regions.

Abstract: A method of fabricating a CMOS thin film transistor includes: providing a substrate; forming an amorphous silicon layer on the substrate; performing a first annealing process on the substrate and crystallizing the amorphous silicon layer into a polysilicon layer; patterning the polysilicon layer to form first and second semiconductor layers; implanting first impurities into the first and second semiconductor layers; implanting second impurities into the first or second semiconductor layer; and performing a second annealing process on the semiconductor layers to remove the metal catalyst remaining in the first or second semiconductor layer, on which the second impurities are implanted, wherein the first impurities are implanted at a dose of 6×1013/cm2 to 5×1015/cm2, and the second impurities are implanted at a dose of 1×1011/cm2 to 3×1015/cm2.

Abstract: A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device having the same, the thin film transistor including: a substrate; a silicon layer formed on the substrate; a diffusion layer formed on the silicon layer; a semiconductor layer that is crystallized using a metal catalyst, formed on the diffusion layer; a gate electrode disposed on the diffusion layer, facing a channel region of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and source and drain electrodes electrically connected to source and drain regions of the semiconductor layer.

Abstract: An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

Abstract: A method of forming a polycrystalline silicon layer includes forming an amorphous silicon layer on a substrate by chemical vapor deposition using a gas including a silicon atom and hydrogen gas, and crystallizing the amorphous silicon layer into a polycrystalline silicon layer using a crystallization-inducing metal. The resultant polycrystalline silicon layer has an improved charge mobility.

Abstract: A method of forming a polycrystalline silicon layer and an atomic layer deposition apparatus used for the same. The method includes forming an amorphous silicon layer on a substrate, exposing the substrate having the amorphous silicon layer to a hydrophilic or hydrophobic gas atmosphere, placing a mask having at least one open and at least one closed portion over the amorphous silicon layer, irradiating UV light toward the amorphous silicon layer and the mask using a UV lamp, depositing a crystallization-inducing metal on the amorphous silicon layer, and annealing the substrate to crystallize the amorphous silicon layer into a polycrystalline silicon layer. This method and apparatus provide for controlling the seed position and grain size in the formation of a polycrystalline silicon layer.

Abstract: An atomic layer deposition apparatus includes a chamber, a vacuum pump to control a pressure in the chamber, a gas supply unit to supply a reaction gas into the chamber, a substrate holder disposed between the vacuum pump and the gas supply unit and having a heater, a mask assembly disposed between the substrate holder and the gas supply unit and having a cooling path to move coolant, and a coolant source to supply the coolant into the cooling path. The mask assembly is positioned a first distance from a substrate, and coolant is supplied into the cooling path of the mask assembly. The substrate is heated using the heater of the substrate holder, a pressure of the chamber is controlled using the vacuum pump, and reaction gasses are sequentially supplied through the gas supply unit.

Abstract: A semiconductor device in which a semiconductor layer of a thin film transistor and a first electrode of a capacitor are formed of amorphous silicon and the whole or a part of source/drain regions of the semiconductor layer and the first electrode of the capacitor are crystallized by a metal induced crystallization method, and a channel region of the semiconductor layer is crystallized by a metal induced lateral crystallization method.

Abstract: A polycrystalline silicon layer, a flat panel display using the polycrystalline silicon layer, and methods of fabricating the same are provided. An amorphous silicon layer is formed on a substrate. A first pattern layer, a second pattern layer, and a metal catalyst layer are formed on the amorphous silicon layer. The first pattern layer and the second pattern layer are formed to define a region of at least 400 ?m2 within which a metal catalyst of the metal catalyst layer is diffused into the amorphous silicon layer. A seed region is crystallized by the diffused metal catalyst. After a crystallization region is grown from the seed region, a semiconductor layer is formed on the crystallization region, so as to fabricate a thin film transistor with excellent characteristics. Using this, a flat panel display is fabricated.

Abstract: A thin film transistor (TFT) includes a substrate, a semiconductor layer disposed on the substrate and including source and drain regions, each having a first metal catalyst crystallization region and a second metal catalyst crystallization region, and a channel region having the second metal catalyst crystallization region, a gate electrode disposed in a position corresponding to the channel region of the semiconductor layer, a gate insulating layer interposed between the semiconductor layer and the gate electrode to electrically insulate the semiconductor layer from the gate electrode, and source and drain electrodes electrically insulated from the gate electrode and electrically connected to the source and drain regions, respectively. An OLED display device includes the thin film transistor and a first electrode, an organic layer, and a second electrode electrically connected to the source and drain electrodes.

Abstract: A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor of which the thin film transistor includes a substrate, a buffer layer disposed on the substrate, a first semiconductor layer and a second semiconductor layer disposed on the buffer layer, a gate electrode insulated from the first semiconductor layer and the second semiconductor layer, a gate insulating layer insulating the gate electrode from the first semiconductor layer and the second semiconductor layer, and source and drain electrodes insulated from the gate electrode and partially connected to the second semiconductor layer, wherein the second semiconductor layer is disposed on the first semiconductor layer.

Abstract: A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.

Abstract: An organic light emission diode (OLED) display device and a method of fabricating the same, wherein the OLED display device includes a substrate including a pixel region and a non-pixel region, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, and including a channel region and source/drain regions, a gate electrode disposed to correspond to the channel region of the semiconductor layer, a gate insulating layer insulating the semiconductor layer from the gate electrode, source/drain electrodes electrically connected to the source/drain regions of the semiconductor layer, and an interlayer insulating layer insulating the gate electrode from the source/drain electrodes, wherein areas of the buffer layer, the gate insulating layer and the interlayer insulating layer that are on the non-pixel region, respectively, are removed, and the partially removed area is 8% to 40% of a panel area.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device including the TFT. The TFT includes a substrate having a pixel region and a non-pixel region, a semiconductor layer, a gate insulating layer, a gate electrode, and source and drain electrodes disposed on the pixel region, at least one gettering site disposed on the non-pixel region, and at least one connection portion to connect the at least one gettering site and the semiconductor layer The method of fabricating the TFT includes patterning a polycrystalline silicon (poly-Si) layer to form a plurality of semiconductor layers, connection portions, and at least one gettering site, the semiconductor layers being connected to the at least one gettering site via the connection portions, and annealing the substrate to getter the plurality of semiconductor layers.

Abstract: Provided are a thin film transistor and method of fabricating the same, in which an amorphous silicon layer is formed on a substrate, a capping layer containing a metal catalyst having a different concentration according to its thickness is formed on the amorphous silicon layer, the capping layer is patterned to form a capping layer pattern, and the amorphous silicon layer is crystallized, such that the density and position of seeds formed at an interface between the amorphous silicon layer and the capping layer pattern is controlled, thereby improving the size and uniformity of grains, and in which polycrystalline silicon of desired size and uniformity is selectively formed at a desired position by one crystallization process, resulting in a thin film transistor having excellent and desired properties.

Abstract: A thin film transistor (TFT), a method of fabricating the same, and an organic light emitting diode (OLED) display device having the TFT. The TFT includes: a substrate; a polycrystalline silicon (poly-Si) semiconductor layer disposed on the substrate, including source, drain, and channel regions, a crystallization-inducing metal, first gettering sites disposed on opposing edges of the semiconductor layer, and a second gettering site spaced apart from the first gettering sites; a gate insulating layer disposed on the semiconductor layer; a gate electrode disposed on the gate insulating layer; an interlayer insulating layer disposed on the gate electrode; and source and drain electrodes disposed on the interlayer insulating layer and electrically connected to the source and drain regions of the semiconductor layer.

Abstract: The present invention relates to a method for fabricating thin film transistor, more particularly, to a method for fabricating thin film transistor which not only manufactures a polycrystalline silicon layer having large grain size and containing a trace of residual metal catalyst by heat treating thereby crystallizing the metal catalyst layer after forming an amorphous silicon layer on a substrate, forming a capping layer formed of nitride film having 1.78 to 1.90 of the refraction index when crystallizing the amorphous silicon layer and forming a metal catalyst layer on the capping layer, but also controls characteristics of the polycrystalline silicon layer by controlling the refraction index of the capping layer.