Abstract: A lens includes a lens unit; an intermediate layer configured to cover a surface portion of the lens unit; and a water-repellent layer, configured to cover a surface portion of the intermediate layer, including a base layer and an ultraviolet (UV) absorber disposed in the base layer.

Abstract: A sphere-type shift control apparatus of an electronic shift system includes a spherical mechanism that includes a shift control portion on a first hemispherical portion of the spherical mechanism and a design portion on a second hemispherical portion of the spherical mechanism. The design portion is configured to provide indirect illumination and transmit images. Power is transmitted from a motor to the rotation shaft of the spherical mechanism using a timing belt or a wire.

Abstract: An input sensing device includes first driving electrodes, second driving electrodes, and sensing electrodes, and a sensing driver that transmits a first driving signal to the first driving electrodes at a first frequency, transmits a second driving signal to the second driving electrodes at a second frequency, and determines a touch or approach of an external object based on sensing signals received from the sensing electrodes. The sensing driver includes analog front-end circuits that separate a sensing signal of the first frequency and a sensing signal of the second frequency that are received from the respective sensing electrodes, and generate digital sensing data based on a result of a recombination of the separated sensing signals.

Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

Abstract: An input sensing device includes first driving electrodes, second driving electrodes, and sensing electrodes, and a sensing driver that transmits a first driving signal to the first driving electrodes at a first frequency, transmits a second driving signal to the second driving electrodes at a second frequency, and determines a touch or approach of an external object based on sensing signals received from the sensing electrodes. The sensing driver includes analog front-end circuits that separate a sensing signal of the first frequency and a sensing signal of the second frequency that are received from the respective sensing electrodes, and generate digital sensing data based on a result of a recombination of the separated sensing signals.

Abstract: A high-concentration wastewater treatment device includes a discharge pin module including a support plate, discharge pins coupled to the support plate, and pin connectors connected to the discharge pins and extended upwards, a discharge plate module spaced apart from the discharge pins, and a circuit module including a main board, distributed processing boards connected to the main board, coupling unit connecting the distributed processing boards, and discharge pin connection portions electrically connected to the distributed processing boards in a direction of a lower end of the main board. The discharge plate module includes a connection pin connected to a lower end of the support plate and a discharge plate accommodation portion coupled to a lower end of the bent portion. The discharge pin connection portions have, at lower ends, coupling grooves into which the pin connectors are inserted, to allow one-touch coupling between the circuit module and the discharge pin module.

Abstract: An image sensor is provided. The image sensor includes a substrate including a first side on which light is incident and a second side opposite the first side; a first separation pattern extending from the second side, the first separation pattern being interposed between unit pixels in the substrate of a light-receiving region and a light-shielding region provided around the light-receiving region; a second separation pattern extending from the first side and overlapping the first separation pattern, the second separation pattern being provided in the substrate of the light-receiving region; and a contact film electrically connected to the first separation pattern, the contact film being provided in the substrate of the light-shielding region. A contact trench which extends from the first side is formed in the light-shielding region of the substrate and exposes the first separation pattern, and the contact film fills at least a part of the contact trench.

Abstract: An image sensor includes a substrate, a photoelectric conversion region in the substrate with the substrate defining a substrate trench on the photoelectric conversion region, a floating diffusion region adjacent to a side surface of the substrate trench, in the substrate, a gate dielectric film that extends along the side surface and a lower surface of the substrate trench and a transfer gate electrode which includes a lower gate that fills a portion of the substrate trench on the gate dielectric film and has a first width, and an upper gate that has a second width smaller than the first width on the lower gate. The gate dielectric film includes a lower dielectric film interposed between the substrate and the lower gate and has a first thickness, and an upper dielectric film adjacent to the floating diffusion region and has a second thickness greater than the first thickness.

Abstract: Strain sensors are attached to a workpiece, and resistance values of the strain sensors are measured with time while cutting the workpiece with a milling cutting machine. A power spectrum in a frequency domain is obtained by Fourier-transforming the resistance values measured with time. A power peak is found in the power spectrum to be outputted as a magnitude of vibration occurring during machining the workpiece. By attaching a strain sensor to a stamper of a plastic working machine, a resistance value of the strain sensor is measured while pressing a workpiece on a die with the stamper. A magnitude of the strain corresponding to the measured resistance value is used to obtain a corresponding plastic working force. By attaching the strain sensor directly to the workpiece, it is possible to monitor the state of the plastic working and/or cutting process of the workpiece with high precision at low cost.

Abstract: An analog front-end includes a (1-1)-th charge amplifier configured to differentially amplify a first and second sensing signals provided to a (1-1)-th input terminal and a (1-2)-th input terminal, respectively, and output a (1-1)-th differential signal. A (1-2)-th charge amplifier is configured to differentially amplify the second sensing signal and a third sensing signal provided to a (1-3)-th input terminal and a (1-4)-th input terminal, respectively, and output a (1-2)-th differential signal. A second charge amplifier is configured to differentially amplify the (1-1)-th differential signal and the (1-2)-th differential signal provided to a (2-1)-th input terminal and a (2-2)-th input terminal, respectively, and output a (2-1)-th differential signal and a (2-2)-th differential signal. A demodulation circuit is configured to filter the (2-1)-th differential signal and the (2-2)-th differential signal and output demodulated differential signals.

Abstract: A method of fabricating an image sensor includes providing a semiconductor substrate having a first surface and a second surface that are opposite to each other. A mask pattern is formed on the first surface. The mask pattern has an opening. A first fluid is supplied in the opening. The first fluid is vaporized to remove the first fluid on the semiconductor substrate. An etching process is performed using the mask pattern to form a pixel isolation trench extending from the first surface towards the second surface. A second fluid is supplied in the pixel isolation trench. The second fluid is replaced in the pixel isolation trench with a third fluid. The third fluid is vaporized. The third fluid has a surface tension that is lower than a surface tension of the first fluid.

Abstract: An analog front-end includes a (1-1)-th charge amplifier configured to differentially amplify a first and second sensing signals provided to a (1-1)-th input terminal and a (1-2)-th input terminal, respectively, and output a (1-1)-th differential signal. A (1-2)-th charge amplifier is configured to differentially amplify the second sensing signal and a third sensing signal provided to a (1-3)-th input terminal and a (1-4)-th input terminal, respectively, and output a (1-2)-th differential signal. A second charge amplifier is configured to differentially amplify the (1-1)-th differential signal and the (1-2)-th differential signal provided to a (2-1)-th input terminal and a (2-2)-th input terminal, respectively, and output a (2-1)-th differential signal and a (2-2)-th differential signal. A demodulation circuit is configured to filter the (2-1)-th differential signal and the (2-2)-th differential signal and output demodulated differential signals.

Abstract: An acoustic resonator includes a substrate and a resonant portion. The resonant portion has a central portion in which a first electrode, a first piezoelectric layer, a second piezoelectric layer, and a second electrode are stacked in order on the substrate, and an extension portion extending outwardly from the central portion and including an insertion layer. A ratio of an average thickness of the first piezoelectric layer to an average thickness of the second piezoelectric layer is 18.4% to 40%.

Abstract: An acoustic resonator includes a substrate, an insulation layer disposed on the substrate, a resonating portion disposed on the insulation layer and having a first electrode, a piezoelectric layer, and a second electrode, stacked thereon, a cavity disposed between the insulation layer and the resonating portion, a protruded portion having a plurality of protrusions disposed on a lower surface of the cavity, and a hydrophobic layer disposed on an upper surface of the cavity and a surface of the protruded portion.

Abstract: A bulk acoustic resonator includes: a substrate; a first electrode disposed on the substrate; a piezoelectric layer disposed to cover at least a portion of the first electrode; a second electrode disposed to cover at least a portion of the piezoelectric layer; and an insertion layer disposed below a partial region of the piezoelectric layer. A thickness of the first electrode in an active region in which the first electrode, the piezoelectric layer, and the second electrode overlap one another is less than a thickness of a region outside the active region. An angle of inclination of an internal side surface of the insertion layer is different from an angle of inclination of an external side surface of the insertion layer.

Abstract: A bulk-acoustic wave resonator includes a substrate, a first layer, a second layer, a membrane layer, and a resonance portion. The substrate includes a substrate protection layer. The first layer is disposed on the substrate protection layer. The second layer is disposed outside of the first layer. The membrane layer forms a cavity with the substrate protection layer and the first layer. The resonance portion is disposed on the membrane layer. Either one or both of the substrate protection layer and the membrane layer includes a protrusion disposed in the cavity.

Abstract: A bulk-acoustic wave resonator includes: a resonator comprising a central portion in which a first electrode, a piezoelectric layer, and a second electrode are sequentially stacked on a substrate, and an extension portion disposed along a periphery of the central portion; and an insertion layer disposed below the piezoelectric layer in the extension portion to raise the piezoelectric layer. The insertion layer may have a first inclined surface formed along a side surface facing the central portion, and the first electrode may have a second inclined surface extending from a lower end of the first inclined surface of the insertion layer.

Abstract: An image sensor includes a substrate, and a pixel separation pattern disposed in the substrate and interposed between a plurality of unit pixels. The plurality of unit pixels include a first unit pixel region and a second unit pixel region adjacent to the first unit pixel region in a first direction. The first unit pixel region and the second unit pixel region respectively include a first transfer gate and a second transfer gate. The pixel separation pattern includes a first pixel separation part interposed between the first unit pixel region and the second unit pixel region, and a second pixel separation part spaced apart from the first pixel separation part in the first direction. A top surface of the first pixel separation part is lower than a top surface of the second pixel separation part.

Abstract: An image sensor includes a substrate including a plurality of pixel regions, and a deep isolation pattern in the substrate between the pixel regions. The deep isolation pattern includes a semiconductor pattern penetrating at least a portion of the substrate, and a dielectric pattern disposed between the substrate and the semiconductor pattern. The dielectric pattern includes a first part disposed adjacent to the semiconductor pattern, and a second part disposed between the substrate and the first part. The semiconductor pattern includes a first semiconductor pattern and a second semiconductor pattern. The first semiconductor pattern is disposed between the dielectric pattern and the second semiconductor pattern. The first part of the dielectric pattern includes a material different from a material of the second part of the dielectric pattern. A thickness of the first part of the dielectric pattern is less than a thickness of the second part of the dielectric pattern.

Abstract: An image sensor is provided. The image sensor includes a substrate including a first side on which light is incident and a second side opposite the first side; a first separation pattern extending from the second side, the first separation pattern being interposed between unit pixels in the substrate of a light-receiving region and a light-shielding region provided around the light-receiving region; a second separation pattern extending from the first side and overlapping the first separation pattern, the second separation pattern being provided in the substrate of the light-receiving region; and a contact film electrically connected to the first separation pattern, the contact film being provided in the substrate of the light-shielding region. A contact trench which extends from the first side is formed in the light-shielding region of the substrate and exposes the first separation pattern, and the contact film fills at least a part of the contact trench.