Abstract: A bulk acoustic wave filter device and method thereof includes a first layer forming an air gap together with a substrate, a lower electrode disposed over the first layer, a piezoelectric layer disposed to cover a portion of the lower electrode, an upper electrode disposed over the piezoelectric layer, a frame layer disposed below the upper electrode, and a lower electrode reinforcing layer disposed on the lower electrode, other than portions in which the piezoelectric layer is disposed. The lower electrode reinforcing layer is formed by separating the lower electrode reinforcing layer from the upper electrode or the frame layer upon one of the upper electrode and the frame layer being formed.

Abstract: An acoustic resonator including a substrate, an active vibration region including, sequentially stacked on the substrate, a lower electrode, a piezoelectric layer, and an upper electrode, and a horizontal resonance suppressing part formed from and disposed in the piezoelectric layer, the horizontal resonance suppressing part having piezoelectric physical properties that are different from piezoelectric physical properties of the piezoelectric layer.

Abstract: A pressure sensor includes a sensor, an elastic support portion, a membrane, and a pressure detector. The sensor is accommodated in a frame of a base substrate. The elastic support portion is elastically connecting the sensor to the frame. The membrane is disposed on a surface of the sensor. The pressure detector is disposed on the membrane and configured to detect a variation in pressure based on a movement of the membrane.

Abstract: An acoustic wave filter device includes a lower electrode disposed between a substrate and a piezoelectric layer, an upper electrode disposed on the piezoelectric layer, and an insulating layer disposed on the upper electrode. The insulating layer exposes portions of the upper electrode.

Abstract: An acoustic resonator includes: a substrate; a resonance part mounted on the substrate and including resonance part electrodes, the resonance part being configured to generate acoustic waves; a cavity disposed between the resonance part and the substrate; a frame part disposed on at least one electrode among the resonance part electrodes, and being configured to reflect the acoustic waves; and a connection electrode configured to connect the at least one electrode to an external electrode, and having a thickness less than a thickness of the at least one electrode.

Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.

Abstract: There is provided a semiconductor package that comprises a board; a semiconductor chip disposed on the board and having an installation recess; an adhesive layer disposed within the installation recess; and a sensor unit disposed on the adhesive layer.

Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.

Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.

Abstract: A pressure sensor element includes a die; a concave groove formed in one surface of the die; a partition wall formed in the concave groove to be spaced apart from side walls, the partition wall partitioning the concave groove into a trench and a cavity; and a membrane formed on the die and covering the concave groove.

Abstract: Provided are sensor elements and a method of manufacturing the same. The sensor element includes a die, an active part including a frame surrounded by the die, a first trench disposed between the die and the active part, and a bridge connecting the die and the frame and a second trench being formed in the bridge, whereby electrical connection from the active part to an electrode pad may be secured and transfer of external stress to the active part may be significantly reduced through the second trench.

Abstract: A pressure sensor package includes a substrate, a pressure sensor, and a semiconductor circuit. The semiconductor circuit is disposed on one surface of the substrate and having a reception space open to one surface of the substrate. A pressure sensor is connected to the substrate and disposed in the reception space.

Abstract: A pressure sensor includes a sensor, an elastic support portion, a membrane, and a pressure detector. The sensor is accommodated in a frame of a base substrate. The elastic support portion is elastically connecting the sensor to the frame. The membrane is disposed on a surface of the sensor. The pressure detector is disposed on the membrane and configured to detect a variation in pressure based on a movement of the membrane.

Abstract: A multi-functional apparatus for testing and etching a substrate capable of increasing spatial efficiency and manufacturing efficiency by performing testing and etching operations in a same chamber body and a substrate processing apparatus including the same, the multi-functional apparatus including a chamber body having an entrance into which the substrate is injected in one of its sides and an exit from which the substrate is ejected in another one of its sides; a transfer unit disposed inside of the chamber body and for transferring the injected substrate in a direction from the entrance to the exit; a laser etching unit disposed on an upper portion of the transfer unit and for etching a part of the substrate disposed on the transfer unit; and a testing unit for testing the substrate disposed on the transfer unit.

Abstract: The present invention relates to an ultrasonic inspection device for small bore pipes comprising: a first arc-shaped frame part and a second arc-shaped frame part which surround the circumference of a pipe when combined with the pipe, and which have one side thereof rotationally connected to each other by means of a rotary connecting pin; an adjustment part that connects the other side of the first arc-shaped frame part and the other side of the second arc-shaped frame part to each other and is capable of adjusting the diameter of the bore formed by the first arc-shaped frame part and the second arc-shaped frame part according to the diameter of the pipe; a probe fixing part for fixing a probe to the first arc-shaped frame part such that the probe comes into contact with the surface of the pipe; an encoder part which is provided to the second arc-shaped frame part and maintains an encoder at a predetermined distance from the pipe; and a plurality of roller parts which are provided to the first arc-shaped fram

Abstract: A complex sensor, a package including a complex sensor and a method of manufacturing the same are provided. The complex sensor includes a base, a first sensor unit disposed on a first surface of the base, and a second sensor unit disposed on a second surface of the base.

Abstract: A device for improving the use efficiency of a content delivery network (CDN) service and an operating method of a service distribution device are provided. The operating method includes receiving a service request signal from one or more electronic devices, determining an available domain for the service request signal based on the amount of idle traffic of one or more service domains in response to the reception of the service request signal, and transmitting a service response signal that includes the available domain information to the one or more electronic devices.

Abstract: An image sensor such as a complementary metal-oxide-semiconductor (CMOS) image sensor and a method of manufacturing the same are provided. The CMOS image sensor includes: a semiconductor substrate including a first surface and a third surface formed by removing a part of the semiconductor substrate from a second surface opposite to the first surface; a plurality of active regions which are formed between the first surface and the third surface and each of which includes a photoelectric conversion element generating charges in response to light input through the third surface; and an isolation region vertically formed from either of the first and third surfaces to isolate the active regions from one another. When the CMOS image sensor is viewed from the above of the third surface, each of the active regions may have round corners and concave sides.

Abstract: A pixel of a complementary metal-oxide-semiconductor (CMOS) image sensor includes a semiconductor substrate having a first surface and a third surface formed by removing part of the semiconductor substrate from a second surface, an active region which is formed between the first surface and the third surface and which contains a photoelectric conversion element generating charges in response to light incident on the substrate at the third surface, and a trench-type isolation region formed from either of the first and third surfaces to isolate the active region from an adjacent active region. The trench-type isolation region is filled with first material in a process that leaves a void in the material, the void is filled or partially filled with second material, and then a layer of third material is formed over the resulting structure composed of the first and second materials.

Abstract: A deposition apparatus is capable of checking, in real time, the thickness or uniformity of a thin layer which is formed. The deposition apparatus includes a moving unit to which a substrate is detachably fixed. A conveyer unit conveys the moving unit in a first direction or in an opposite direction to the first direction. A deposition unit includes at least one deposition assembly for depositing a deposition material on the substrate. A discharge data acquisition unit acquires data associated with the amount of the deposition material discharged per unit time from the at least one deposition assembly. A transmission unit transmits the data acquired by the discharge data acquisition unit.