Abstract: A semiconductor package includes an electromagnetic shielding member for shielding electromagnetic waves. An antenna is disposed on an upper face of the electromagnetic shielding member and includes an antenna part with a plurality of conductive particles electrically connected with each other and an insulation part disposed on the upper face of the electromagnetic shielding member and insulating the antenna part. Ball lands are disposed on the electromagnetic shielding member and are electrically connected with the antenna part. A Radio Frequency Identification (RFID) chip is electrically connected to the ball lands.

Abstract: An organic light-emitting display device and a method of manufacturing the same. The organic light-emitting display device has a structure including an organic layer between a pixel electrode and an opposite electrode, the organic layer including a emissive layer and an insulating layer defining a light emission area. Accordingly, the insulating layer included in the organic layer functions as a pixel-defining layer, and thus, “edge open”, which is generated when forming an emissive layer on a thick pixel-defining layer according to the comparable art, may be reduced or prevented.

Abstract: A stack package includes a first package having a first semiconductor chip and a first encapsulation member which seals the first semiconductor chip. A second package is stacked on the first package, and includes a second semiconductor chip and a second encapsulation member which seals the second semiconductor chip. Flexible conductors are disposed within the first encapsulation member of the first package in such a way as to electrically connect the first package and the second package.

Abstract: An organic layer of an organic light emitting diode (OLED) display device is formed by transferring a transfer layer of a donor film to aligned pixel openings in a pixel defining region of the OLED display device such that the organic layer is formed in the pixel openings. Each aligned pixel opening has a pair of long sides and a pair of short sides, and the transferring of the transfer layer is performed by applying tensile force to the donor film in a direction perpendicular to the short sides of the pixel openings.

Abstract: A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.

Abstract: A stacked wafer level package includes a first semiconductor chip having a first bonding pad and a second semiconductor chip having a second bonding pad. Both bonding pads of the semiconductor chips face the same direction. The second semiconductor chip is disposed in parallel to the first semiconductor chip. A third semiconductor chip is disposed over the first and second semiconductor chips acting as a supporting substrate. The third semiconductor chip has a third bonding pad that is exposed between the first and the second semiconductor chips upon attachment. Finally, a redistribution structure is electrically connected to the first, second, and third bonding pads.

Abstract: A stack package includes a first package having a first semiconductor chip and a first encapsulation member which seals the first semiconductor chip. A second package is stacked on the first package, and includes a second semiconductor chip and a second encapsulation member which seals the second semiconductor chip. Flexible conductors are disposed within the first encapsulation member of the first package in such a way as to electrically connect the first package and the second package.

Abstract: A laser induced thermal imaging (LITI) apparatus and a method of making an electronic device using the same are disclosed. The LITI apparatus includes a chamber, a substrate support, a contact frame, and a laser source or oscillator. The LITI apparatus transfers a transferable layer from a film donor device onto a surface of an intermediate electronic device. The LITI apparatus uses a magnetic force to provide a close contact between the transferable layer and the surface of the intermediate device. The magnetic force is generated by magnetic materials formed in two components of the LITI apparatus that are spaced apart interposing transferable layer and the surface of the intermediate device. Magnets or magnetic materials are formed in the two following components of the LITI apparatus: 1) the intermediate device and the film donor device; 2) the intermediate device and the contact frame; 3) the substrate support and the film donor device; or 4) the substrate support and the contact frame.

Abstract: A stack package having stacked chips includes first voltage dropping units respectively formed in the chips; second voltage dropping units respectively formed in the chips; first signal generation units connected in parallel to a first line formed by connecting the first voltage dropping units in series, respectively formed in the chips, and configured to apply high level signals according to a voltage of the first line; second signal generation units connected in parallel to a second line formed by connecting in series the second voltage dropping units, respectively formed in the chips, and configured to apply high level signals according to a voltage of the second line; and chip selection signal generation units respectively formed in the chips, and configured to combine signals outputted from the first signal generation units and the second signal generation units and generate chip selection signals.

Abstract: A semiconductor package includes a first semiconductor chip formed with a first through-silicon via; a second semiconductor chip stacked over the first semiconductor chip and formed with a second through-silicon via; and a cantilever formed over the first semiconductor chip and electrically connected to the first through-silicon via or the second through-silicon via according to an electrical signal.

Abstract: Provided are a laser induced thermal imaging (LITI) mask, a laser irradiation apparatus including the LITI mask, and a method of manufacturing an organic light emitting device by using the LITI mask. The LITI mask including an opening corresponding to a pixel region and an opening corresponding to an edge of a pixel is used to form an organic layer in an upper portion of a substrate of an organic light emitting device, thereby transferring the organic layer to an edge of the pixel region.

Abstract: A stack semiconductor package includes a first insulation member having engagement projections and a second insulation member formed having engagement grooves into which the engagement projections are to be engaged. First conductive members are disposed in the first insulation member and have portions which are exposed on the engagement projections. Second conductive members are disposed in the second insulation member in such a way as to face the first conductive members and have portions which are exposed in the engagement grooves. A first semiconductor chip is disposed within the first insulation member and is electrically connected to the first conductive members. A second semiconductor chip is disposed in the second insulation member and is electrically connected to the second conductive members.

Abstract: A semiconductor package having an improved connection structure and a method for manufacturing the same is described. The semiconductor package includes a substrate having a substrate body, connection pads that are located on one surface of the substrate body, and ball lands that are located on the other surface of the substrate body opposite the one surface. The ball lands are electrically connected to the connection pads. A semiconductor chip having bumps that are formed to correspond to the connection pads is connected to the substrate. An anisotropic conductive member having an insulation element is interposed between the substrate and the semiconductor chip to connect the substrate and the semiconductor chip. Electrically flowable conductive particles within the insulation element flow in the insulation element according to applied electric fields so as to arrange the electrically flowable conductive particles between the connection pads and the bumps.

Abstract: A method for fabricating a display device includes providing a substrate, forming an underlying layer over the substrate, forming an insulating layer over the substrate exposing the underlying layer, and forming an organic EL layer on the exposed portion of the underlying layer by a Laser Induced Thermal Imaging (LITI) method, wherein a thickness of the insulating layer is less than 500 nm.

Abstract: A display device includes an underlying layer formed over a substrate; an insulating layer formed over the substrate to expose the underlying layer; and an organic EL layer formed on the exposed portion of the underlying layer, wherein a thickness of the insulating layer is formed to a predetermined thickness to prevent defects in the organic EL layer that can occur in an edge portion of the exposed portion.

Abstract: A semiconductor chip includes a silicon wafer formed with a via hole, a metal wire disposed in the via hole, and a filler that exposes a part of an upper portion of the metal wire while filing the via hole.

Abstract: An organic light emitting diode (OLED) display is disclosed. In one embodiment, the OLED display includes i) a plurality of pixels comprising a blue light emitting region, a green light emitting region, and a red light emitting region on a substrate and formed by stacking a lower electrode, an organic layer, and an upper electrode. In one embodiment, the blue and green light emitting regions are formed in a microcavity structure, and the red light emitting region is formed in a non-microcavity structure.

Abstract: A manufacturing method of an active matrix organic light emitting diode (AMOLED) display and an apparatus for manufacturing the AMOLED display, where the display has improved surface flatness and thickness uniformity as well as an improved image quality at edge regions of a pattern. According to the exemplary embodiment of the present invention, an anode electrode is formed on a lower structure of a substrate, an organic layer is formed on the anode electrode by imaging a complex laser beam on a donor film disposed on the substrate having light emitting materials, the complex laser beam having energy distribution inclination over 2%/?m at a threshold energy. The donor film is removed, and a cathode electrode is formed on the organic layer.

Abstract: A crucible heating apparatus and a deposition apparatus including the same. The crucible heating apparatus includes: a crucible including a main body to house a deposition material, and a cover disposed on the main body, having a nozzle; a band coupled to the crucible, through contact parts; a thermocouple coupled to the band; a housing to house the crucible and the band; and a heater disposed inside the housing, to heat the deposition material.

Abstract: A semiconductor package includes an electromagnetic shielding member for shielding electromagnetic waves. An antenna is disposed on an upper face of the electromagnetic shielding member and includes an antenna part with a plurality of conductive particles electrically connected with each other and an insulation part disposed on the upper face of the electromagnetic shielding member and insulating the antenna part. Ball lands are disposed on the electromagnetic shielding member and are electrically connected with the antenna part. A Radio Frequency Identification (RFID) chip is electrically connected to the ball lands.