Abstract: A semiconductor device includes an internal circuit and a power mesh configured to transmit an operating voltage to the internal circuit. The power mesh includes first power lines extending in a first direction and arranged in a second direction intersecting with the first direction, when viewed from a top; second power lines sharing lanes with the first power lines and at least partially overlapping with the first power lines in the second direction; first power straps extending in the second direction and coupled to the first power lines; and second power straps extending in the second direction and coupled to the second power lines. Each of the first and second power lines may have a width of the same size as a width of each lane in sections where they do not overlap, and may have a width of a size smaller than the width of each lane in sections where they overlap.

Abstract: A semiconductor memory device includes a memory cell array; a page buffer circuit including a plurality of page buffers which are coupled to the memory cell array through a plurality of bit lines which extend in a second direction intersecting with a first direction; and a cache latch circuit including a plurality of cache latches which are coupled to the plurality of page buffers. The plurality of cache latches have a two-dimensional arrangement in the first direction and the second direction. Among the plurality of cache latches, an even cache latch and an odd cache latch which share a data line and an inverted data line are disposed adjacent to each other in the first direction.

Abstract: A semiconductor memory device includes a stack disposed over a first substrate; an etch barrier including a plurality of dummy channels which pass through the stack and surround a coupling region; and a plurality of channels passing through the stack in a cell region outside the coupling region. The stack has a structure in which first dielectric layers and second dielectric layers are alternately stacked, inside the coupling region, and has a structure in which the first dielectric layers and electrode layers are alternately stacked, outside the coupling region.

Abstract: A semiconductor memory device includes: a plurality of page buffers disposed on a substrate; and a plurality of pads exposed to one surface of a dielectric layer covering the page buffers, and coupled to the respective page buffers. The substrate comprises a plurality of high voltage regions and a plurality of low voltage regions which are alternately disposed in a second direction crossing a first direction. Each of the plurality of page buffers comprises a sensing unit and a bit line select transistor coupled between the sensing unit and the one of the plurality of pads. The bit line select transistors of the plurality of page buffers are disposed in the plurality of high voltage regions, and the plurality of pads are distributed and disposed in a plurality of pad regions which correspond to the high voltage regions and are spaced apart from each other in the second direction.

Abstract: Disclosed is a semiconductor memory device. The semiconductor memory device may include: a memory cell array; and a cache latch circuit configured to exchange data with the memory cell array through a plurality of bit lines extended in a second direction crossing a first direction, and comprising a plurality of cache latches arranged in a plurality of column in the first direction and in a plurality of rows in the second direction. Each of the cache latches may be coupled to any one of a plurality of input/output (IO) pins. Cache latches coupled to the IO pins at the same time may constitute one IO cache latch unit. The cache latches included in the one IO cache latch unit may be arranged in 2×2 array units.

Abstract: Disclosed is a carbon dioxide absorbent and a carbon dioxide separation method using the same that greatly reduces energy consumption due to a small amount of latent heat required in regeneration of absorbents, enhances CO2 absorption rate, undergoes almost no thermal denaturation even at high temperatures while absorbing carbon dioxide, and results in a considerable reduction of the cost associated with absorption of carbon dioxide.

Abstract: A semiconductor memory device includes a stack disposed over a substrate defined with cell and connection areas; channel structures passing through the stack in the cell area; and slits defined in the stack. The stack includes first dielectric layers separately staked in the cell and connection areas; electrode layers disposed alternately with the first dielectric layers in the cell area and a periphery of the connection area adjacent to the slits; and second dielectric layers disposed alternately with the first dielectric layers in a central part of the connection area distant from the slits. A distance between the slits in the connection area is larger than a distance between the slits in the cell area, and, at a boundary between the periphery and the central part of the connection area, the electrode layers and the second dielectric layers disposed at the same layers are in contact with each other.

Abstract: A semiconductor memory device includes a stack disposed over a substrate defined with cell and connection areas; channel structures passing through the stack in the cell area; and slits defined in the stack. The stack includes first dielectric layers separately staked in the cell and connection areas; electrode layers disposed alternately with the first dielectric layers in the cell area and a periphery of the connection area adjacent to the slits; and second dielectric layers disposed alternately with the first dielectric layers in a central part of the connection area distant from the slits. A distance between the slits in the connection area is larger than a distance between the slits in the cell area, and, at a boundary between the periphery and the central part of the connection area, the electrode layers and the second dielectric layers disposed at the same layers are in contact with each other.

Abstract: A semiconductor memory device includes a memory cell array; and a page buffer circuit coupled to the memory cell array through a plurality of bit lines which extend in a second direction intersecting with a first direction. The page buffer circuit includes a plurality of bit line select transistors coupled to the plurality of bit lines; a plurality of latches coupled to the plurality of bit line select transistors, respectively; and a plurality of erase bias pass transistors coupled to the plurality of bit lines, and configured to transfer an erase voltage to the bit lines. The plurality of erase bias pass transistors and the plurality of bit line select transistors are disposed in different regions, and are not adjacent to each other.

Abstract: A semiconductor device includes an internal circuit and a power mesh configured to transmit an operating voltage to the internal circuit. The power mesh includes first power lines extending in a first direction and arranged in a second direction intersecting with the first direction, when viewed from a top; second power lines sharing lanes with the first power lines and at least partially overlapping with the first power lines in the second direction; first power straps extending in the second direction and coupled to the first power lines; and second power straps extending in the second direction and coupled to the second power lines. Each of the first and second power lines may have a width of the same size as a width of each lane in sections where they do not overlap, and may have a width of a size smaller than the width of each lane in sections where they overlap.

Abstract: Disclosed are a method for measuring the adhesive strength of a thin film using surface waves, and a computer-readable recording medium having a program for performing same recorded thereon. The method for measuring the adhesive strength of a thin film measures the adhesive strength between a substrate and a thin film by means of an electronic calculator, using sound waves measured from a thin film structure having a thin film formed on a substrate.

Abstract: A semiconductor memory device includes a stacked structure including a plurality of conductive layers and a plurality of interlayer insulating layers, which are alternately stacked on a substrate; stepped grooves provided in the stacked structure, the stepped grooves having different depths from each other; and an opening portion penetrating the stacked structure to contact the substrate and having steps on sidewalls, the steps having heights corresponding to depth differences between stepped grooves.

Abstract: A contents sharing method includes a step for receiving playback capability information from a client apparatus; a determination step for determining, on the basis of the received playback capability information, whether to carry out partial processing of contents to be supplied to the client apparatus; and a transmission step for processing some frames in the contents to be played in the client apparatus and transmitting the processed frames to the client apparatus if it is determined that the partial processing is to be performed. Accordingly, contents may be efficiently provided.

Abstract: A multiple beam path laser optical system using a multiple beam reflector. The multiple beam path laser optical system includes a light source part to generate a laser beam to be irradiated to a specimen, the multiple beam reflector to split a laser beam incident thereto from the light source part and to provide a plurality of optical paths, a main beam splitter to irradiate the laser beam split by the multiple beam reflector to the specimen, a transducer to excite the specimen for signal detection of the laser beam irradiated to the specimen, and a control part to analyze an interference pattern of a laser beam reflected from the specimen and recombined in the main beam splitter.

Abstract: Provided are method and apparatus for transmitting and receiving a multimedia streaming service via a network. The method of providing a multimedia streaming service includes: dividing encoded data of a video including at least one of a two-dimensional (2D) video and a three-dimensional (3D) video into fragments; determining at least one of 3D signaling information for each fragment and relationship information to be used when the video refers to other videos; and continuously transmitting the fragments including the property information regarding the fragments and encoded video data.

Abstract: A contents sharing method includes a step for receiving playback capability information from a client apparatus; a determination step for determining, on the basis of the received playback capability information, whether to carry out partial processing of contents to be supplied to the client apparatus; and a transmission step for processing some frames in the contents to be played in the client apparatus and transmitting the processed frames to the client apparatus if it is determined that the partial processing is to be performed. Accordingly, contents may be efficiently provided.

Abstract: The present invention relates to a copolymer resin composition formed by polymerizing an alkyl methacrylate-based monomer, a styrene-based monomer, a phenylmaleimide-based monomer and an alkyl acrylate-based monomer and to an optical film formed using the copolymer resin composition. The resin composition of the present invention may reduce odors which may be generated during the film extrusion and have a good thermal resistance and thermal stability.

Abstract: A multiple beam path laser optical system using a multiple beam reflector. The multiple beam path laser optical system includes a light source part to generate a laser beam to be irradiated to a specimen, the multiple beam reflector to split a laser beam incident thereto from the light source part and to provide a plurality of optical paths, a main beam splitter to irradiate the laser beam split by the multiple beam reflector to the specimen, a transducer to excite the specimen for signal detection of the laser beam irradiated to the specimen, and a control part to analyze an interference pattern of a laser beam reflected from the specimen and recombined in the main beam splitter.

Abstract: According to example embodiments of inventive concepts, a semiconductor package apparatus includes a first semiconductor package including a first substrate, a first solder resist layer on the first substrate, and a first sealing member that covers and protects the first solder resist layer, and a plurality of solder balls on the first substrate. The plurality of solder balls includes a first solder ball having a first height and a second solder ball having a second height that is different from the first height. The first sealing member includes holes that expose the solder balls.

Abstract: A semiconductor package includes a circuit board comprising a first surface and a second surface opposite the first surface. A first semiconductor chip is stacked on the first surface and a second semiconductor chip stacked on the first semiconductor chip. A region of the second chip protrudes beyond a side of the first semiconductor chip. A support underpins the protruding region of the second chip. The support may be, for example, dry film solder resist dam.