Abstract: The present invention provides an optical filter for its use. In the present invention, it is possible to provide an optical filter that effectively blocks ultraviolet ray and infrared ray and exhibits high transmittance in visible light. Furthermore, it is possible to provide an optical filter where the transmission characteristics are stably maintained even when an incident angle is changed. Moreover, it is possible to provide an optical filter that does not exhibit problems such as ripple or petal flare.

Abstract: A nonvolatile memory device according to the embodiment includes: a first inverter; and a second inverter cross-coupled to the first inverter, wherein the second inverter includes a pull-up transistor, a pull-down transistor, and a ferroelectric field effect transistor having gate nodes connected to each other, and a restore transistor having one electrode connected to the ferroelectric field effect transistor, and the second inverter stores data in a nonvolatile manner.

Abstract: A PUF apparatus comprises: a PUF cell array in which a plurality of PUF cells are arranged each including a FeFET pair whose gates are commonly connected to a corresponding word line among a plurality of word lines, and whose drains and sources are connected to a corresponding bit line pair and a corresponding source line pair among a plurality of bit line pairs and a plurality of source line pairs running in a direction crossing the plurality of word lines; and a read-write-back block which is activated according to a read enable signal, and senses and amplifies a voltage difference occurring in a corresponding bit line pair among the plurality of bit line pairs according to the difference in driving strength due to a deviation in a manufacturing process of the FeFET pair in the PUF cell selected by a selected word line among the plurality of word lines.

Abstract: A display apparatus according to a concept of the disclosure includes: a display panel configured to display an image in a front direction; a top chassis positioned in a front direction of the display panel; a bottom chassis positioned in a rear direction of the display panel; a rear cover covering a rear side of the bottom chassis; and a stand member being accommodatable in the rear cover and selectively coupled with a rear surface of the rear cover, wherein the rear cover includes an accommodating portion in which the stand member is accommodated and a coupling portion coupled with the stand member, and the stand member includes an inserting protrusion which is inserted into the accommodating portion and the coupling portion.

Abstract: An electrode includes an electrode active material, wherein the electrode active material layer includes an electrode active material, polyvinylidene fluoride, and a conductive agent, wherein the conductive agent includes a carbon nanotube structure in which 2 to 5,000 single-walled carbon nanotube units are bonded to each other, and the carbon nanotube structure is included in an amount of 0.01 wt % to 0.5 wt % in the electrode active material layer. A secondary battery including the same, and a method of preparing the electrode are also provided.

Abstract: A system and method for stirring molten material such as glass are provided. To prevent sagging of a cover of a stirring system, a portion where deformation or sagging may significantly occur is suspended by a suspension system, so that local sagging and deformation of the cover is suppressed. As a result, a crack which may occur in the cover is suppressed, and therefore, contamination of the molten material is likewise suppressed.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: A system and method for stirring molten material such as glass are provided. To prevent sagging of a cover of a stirring system, a portion where deformation or sagging may significantly occur is suspended by a suspension system, so that local sagging and deformation of the cover is suppressed. As a result, a crack which may occur in the cover is suppressed, and therefore, contamination of the molten material is likewise suppressed.

Abstract: The present invention relates to use of a composition comprising protectin DX of Formula 1 as an effective ingredient for treating, preventing or ameliorating hyperlipidemia or fatty liver disease and/or protecting the liver.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: The present invention relates to a system for providing a supplementary service by identifying an object in an image and comprises: an image service server and a user terminal. The image service server provides image information and includes a database that manages metadata for the provision of the service. The user terminal dynamically generates control command information according to the information for the object selected in the image. In addition, the user terminal receives the information for the object selected in the image that is displayed on screen and transfers the information to the image service server. Furthermore, the user terminal receives from the image service server the preset supplementary service that corresponds to the information for the object selected.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a first and a second region, forming an etch target layer over the substrate, forming a hard mask layer over the etch target layer to have different thicknesses over the first and the second regions, forming a hard mask pattern by etching the hard mask layer, and etching the etch target layer using the hard mask pattern as an etch mask to form a target pattern having different densities over the first and the second regions.

Abstract: A method includes forming a photoresist pattern over a certain portion of a material layer to expose an ion implantation region, implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier, and removing the photoresist pattern using plasma of a gas mixture including a hydrocarbon-based gas.

Abstract: The present invention relates to a system for providing a supplementary service by identifying an object in an image and comprises: an image service server and a user terminal. The image service server provides image information and includes a database that manages metadata for the provision of the service. The user terminal dynamically generates control command information according to the information for the object selected in the image. In addition, the user terminal receives the information for the object selected in the image that is displayed on screen and transfers the information to the image service server. Furthermore, the user terminal receives from the image service server the preset supplementary service that corresponds to the information for the object selected.

Abstract: A data driver includes a gamma voltage generator that generates red, green, and blue gamma voltages according to red, green, and blue adjustment signals, and a digital to analog converter that converts data signals received from a latch to positive or negative analog video signals using the red, green, and blue gamma voltages received from the gamma voltage generator.

Abstract: A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFX gas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2 gas and the SiFX gas.

Abstract: A method for fabricating semiconductor device includes forming a nitride pattern and a hard mask pattern over a substrate, forming a trench by etching the substrate using the hard mask pattern as an etch barrier, forming an oxide layer filling the trench, performing a planarization process on the oxide layer until the nitride pattern is exposed, and removing the nitride pattern though a dry strip process using a plasma.

Abstract: A semiconductor device with an asymmetric transistor and a method for fabricating the same are provided. The semiconductor device includes: a substrate having a plurality of first active regions, at least one second active region, and a plurality of device isolation regions; gate patterns formed in a step structure over a border region between individual first active regions and second active region, wherein one side of the individual gate pattern is formed over a portion of the individual first active region, and the other side of the individual gate pattern is formed over a portion of the second active region; spacers formed on lateral walls of the gate patterns; first cell junction regions formed in the first active regions, for connecting to storage nodes; and a second cell junction region formed in the second active region, for connecting to a bit line.