Abstract: A system and method for stirring molten material such as glass are provided. To prevent sagging of a cover of a stirring system, a portion where deformation or sagging may significantly occur is suspended by a suspension system, so that local sagging and deformation of the cover is suppressed. As a result, a crack which may occur in the cover is suppressed, and therefore, contamination of the molten material is likewise suppressed.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: A system and method for stirring molten material such as glass are provided. To prevent sagging of a cover of a stirring system, a portion where deformation or sagging may significantly occur is suspended by a suspension system, so that local sagging and deformation of the cover is suppressed. As a result, a crack which may occur in the cover is suppressed, and therefore, contamination of the molten material is likewise suppressed.

Abstract: The present invention relates to use of a composition comprising protectin DX of Formula 1 as an effective ingredient for treating, preventing or ameliorating hyperlipidemia or fatty liver disease and/or protecting the liver.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: A semiconductor device may include: a substrate having first and second surfaces; an interlayer dielectric layer having a first opening to expose the first surface; a first plug positioned in the first opening and isolated from a sidewall of the first opening by a pair of gaps; a bit line extended in any one direction while covering the first plug; a second plug including a lower part adjacent to the first plug and an upper part adjacent to the bit line, and connected to the second surface; a first air gap positioned between the first plug and the lower part of the second plug; and a second air gap positioned between the bit line and the upper part of the second plug, and having a larger width than the first air gap.

Abstract: The present invention relates to a system for providing a supplementary service by identifying an object in an image and comprises: an image service server and a user terminal. The image service server provides image information and includes a database that manages metadata for the provision of the service. The user terminal dynamically generates control command information according to the information for the object selected in the image. In addition, the user terminal receives the information for the object selected in the image that is displayed on screen and transfers the information to the image service server. Furthermore, the user terminal receives from the image service server the preset supplementary service that corresponds to the information for the object selected.

Abstract: A method for fabricating a semiconductor device includes providing a substrate having a first and a second region, forming an etch target layer over the substrate, forming a hard mask layer over the etch target layer to have different thicknesses over the first and the second regions, forming a hard mask pattern by etching the hard mask layer, and etching the etch target layer using the hard mask pattern as an etch mask to form a target pattern having different densities over the first and the second regions.

Abstract: A method includes forming a photoresist pattern over a certain portion of a material layer to expose an ion implantation region, implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier, and removing the photoresist pattern using plasma of a gas mixture including a hydrocarbon-based gas.

Abstract: The present invention relates to a system for providing a supplementary service by identifying an object in an image and comprises: an image service server and a user terminal. The image service server provides image information and includes a database that manages metadata for the provision of the service. The user terminal dynamically generates control command information according to the information for the object selected in the image. In addition, the user terminal receives the information for the object selected in the image that is displayed on screen and transfers the information to the image service server. Furthermore, the user terminal receives from the image service server the preset supplementary service that corresponds to the information for the object selected.

Abstract: A data driver includes a gamma voltage generator that generates red, green, and blue gamma voltages according to red, green, and blue adjustment signals, and a digital to analog converter that converts data signals received from a latch to positive or negative analog video signals using the red, green, and blue gamma voltages received from the gamma voltage generator.

Abstract: A method for forming a trench includes providing a substrate, and forming the trench in the substrate using a gas containing chlorine (Cl2) gas as a main etch gas and SiFX gas as an additive gas, wherein a sidewall of the trench has a substantially vertical profile by virtue of reaction of the Cl2 gas and the SiFX gas.

Abstract: A method for fabricating semiconductor device includes forming a nitride pattern and a hard mask pattern over a substrate, forming a trench by etching the substrate using the hard mask pattern as an etch barrier, forming an oxide layer filling the trench, performing a planarization process on the oxide layer until the nitride pattern is exposed, and removing the nitride pattern though a dry strip process using a plasma.

Abstract: A semiconductor device with an asymmetric transistor and a method for fabricating the same are provided. The semiconductor device includes: a substrate having a plurality of first active regions, at least one second active region, and a plurality of device isolation regions; gate patterns formed in a step structure over a border region between individual first active regions and second active region, wherein one side of the individual gate pattern is formed over a portion of the individual first active region, and the other side of the individual gate pattern is formed over a portion of the second active region; spacers formed on lateral walls of the gate patterns; first cell junction regions formed in the first active regions, for connecting to storage nodes; and a second cell junction region formed in the second active region, for connecting to a bit line.

Abstract: A method includes forming a photoresist pattern over a certain portion of a material layer to expose an ion implantation region, implanting impurities in the ion implantation region of the material layer using the photoresist pattern as an ion implantation barrier, and removing the photoresist pattern using plasma of a gas mixture including a hydrocarbon-based gas.

Abstract: A chip on glass type liquid crystal display device and a method for fabricating the same are provided in which a surface of a pad electrode for attaching a flexible printed circuit film is embossed to increase an adhesive force between a pad electrode and a flexible printed circuit film, thereby ensuring contact between the pad electrode and the flexible printed circuit film. Unit pixels in an active region contain thin film transistors formed at intersections of gate lines and data lines. A pad electrode is formed in an inactive region. An embossing pattern is formed on the pad electrode. An adhesive is provided on the pad electrode including the embossing pattern and an external drive circuit part is connected to the pad electrode by the adhesive.

Abstract: A pad oxide layer is formed on a substrate. A pad nitride layer is formed on the pad oxide layer. The pad nitride layer and the pad oxide layer are patterned. Predetermined portions of the substrate are etched using the pad nitride layer as an etch barrier to thereby form trenches used as device isolation regions. The trenches are filled with an insulation layer to thereby form device isolation regions. The pad nitride layer is removed. Recesses are formed by etching predetermined portions of the pad oxide layer and the substrate. The pad oxide layer is removed. A gate oxide layer is formed on the recesses and on the substrate. Gate structures of which bottom portions are buried in the recesses on the gate oxide layer are formed.

Abstract: A method of fabricating a recess channel in a semiconductor device includes forming a hard mask pattern over a substrate, etching the substrate using the hard mask pattern to form first recesses, forming an insulation layer over the hard mask pattern and the first recesses, etching the insulation layer to form spacers on sidewalls of the first recesses and on sidewalls of the hard mask pattern, etching the substrate below the first recesses to form second recesses using a sulfur fluoride containing gas mixture, and removing the hard mask pattern and the spacers.

Abstract: A method for fabricating a semiconductor device with a gate is provided. The method includes: forming a gate insulation layer over a substrate; sequentially forming a polysilicon layer, a silicide layer and a hard mask layer over the gate insulation layer; selectively patterning the hard mask layer; etching the silicide layer using the patterned hard mask layer as a mask such that the silicide layer has a cross-sectional etch profile that is negatively sloped; etching the polysilicon layer using the patterned hard mask layer as a mask to form a gate; and performing a light oxidation process to oxidize exposed sidewalls of the polysilicon layer and the silicide layer.