Patents by Inventor Tae Youn Kim

Tae Youn Kim has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10901002
    Abstract: The present invention relates to fuse diagnosis device and method using voltage distribution, and more particularly, to fuse diagnosis device and method using voltage distribution which connect a resistor unit and a diagnostic resistor to one side of the fuse so as to be connected with the battery in parallel and calculate voltage of a battery applied to the diagnostic resistor by using the voltage distribution to diagnose a state of the fuse, in order to diagnose the states of one or more fuses connected in parallel.
    Type: Grant
    Filed: September 20, 2017
    Date of Patent: January 26, 2021
    Assignee: LG CHEM, LTD.
    Inventors: Tae Youn Kim, Il Hoon Choi
  • Publication number: 20210003880
    Abstract: A display apparatus includes a frame case to support four sides of a display panel. The frame case is formed by bending a bar-shaped member made of a metal into a rectangular ring shape. Opposite ends of the bar-shaped member facing each other are covered by a cover member, which prevents quality degradation of the appearance of the display.
    Type: Application
    Filed: September 21, 2020
    Publication date: January 7, 2021
    Applicant: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Youn YOON, Myeong Gil KIM, Dong Jin LEE, Hyun Jun JUNG, Jong Hee HAN, Kwang Hyuck SO, Jae Wook YOO
  • Patent number: 10877521
    Abstract: A display device includes a flexible substrate, a display element on the flexible substrate and including a thin film transistor, a metal layer disposed at a lower portion of the flexible substrate, and an air layer formed between the flexible substrate and the metal layer.
    Type: Grant
    Filed: May 10, 2019
    Date of Patent: December 29, 2020
    Assignee: SAMSUNG DISPLAY CO., LTD.
    Inventors: Hyo Jung Kim, Tae Young Kim, Jong Woo Park, Dae Youn Cho, Ki Ju Im, Young Tae Choi
  • Patent number: 10854143
    Abstract: An organic light-emitting display device includes a display unit having a plurality of pixel units. The display device also includes a timing controller for calculating a black bias pixel ratio (BBPR) of the display unit based on image signals provided by an external source and for generating a control signal based on the BBPR. The BBPR is the ratio of a number of pixel units in a black state to a total number of pixel units. A power supply unit provides a driving voltage to the display unit based on the control signal from the timing controller, wherein the power supply unit provides a first driving voltage to the display unit when the BBPR is less than a reference value and provides a second driving voltage, which is higher than the first driving voltage, otherwise.
    Type: Grant
    Filed: January 4, 2019
    Date of Patent: December 1, 2020
    Assignee: Samsung Display Co., Ltd.
    Inventors: Dae Youn Cho, Tae Young Kim, Hee Jin Kim, Jong Woo Park, Young Tae Choi
  • Publication number: 20200369588
    Abstract: A method for producing dimethylolbutanal, the method including: (A) distilling a raw material comprising dimethylolbutanal (DMB) in a distillation column; (B) separating the distilled raw material in the distillation column into a low boiling point component, dimethylolbutanal, and a high boiling point component; and (C) refluxing a portion or all of the high boiling point component to the distillation column by heating the portion or all of the high boiling point component, in which the dimethylolbutanal is separated from a side cut of the distillation column.
    Type: Application
    Filed: January 24, 2019
    Publication date: November 26, 2020
    Inventors: Sungshik Eom, Dawon Jung, Tae Youn Kim, Dong Hyun Ko, Mi Young Kim, Min Ji Choi, Taewoo Kim
  • Patent number: 10823994
    Abstract: A display apparatus includes a frame case to support four sides of a display panel. The frame case is formed by bending a bar-shaped member made of a metal into a rectangular ring shape. Opposite ends of the bar-shaped member facing each other are covered by a cover member, which prevents quality degradation of the appearance of the display.
    Type: Grant
    Filed: September 1, 2017
    Date of Patent: November 3, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Tae Youn Yoon, Myeong Gil Kim, Dong Jin Lee, Hyun Jun Jung, Jong Hee Han, Kwang Hyuck So, Jae Wook Yoo
  • Patent number: 10818796
    Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.
    Type: Grant
    Filed: January 30, 2017
    Date of Patent: October 27, 2020
    Assignee: pSemi Corporation
    Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae Youn Kim
  • Publication number: 20200335633
    Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.
    Type: Application
    Filed: January 9, 2020
    Publication date: October 22, 2020
    Inventors: Michael A. Stuber, Christopher N. Brindle, Dylan J. Kelly, Clint L. Kemerling, George P. Imthurn, Robert B. Welstand, Mark L. Burgener, Alexander Dribinsky, Tae-Youn Kim
  • Publication number: 20200325120
    Abstract: The present invention provides a quinazoline derivative or its pharmaceutically acceptable salt, a process for the preparation thereof, a pharmaceutical composition comprising the same and a use thereof. The quinazoline derivative or its pharmaceutically acceptable salt has a selective inhibitory activity against the phosphatidylinositol 3-kinase delta subunit, and therefore can be usefully applied for preventing or treating cancer, along with avoiding side effects such as lymphopenia-associated inflammatory responses.
    Type: Application
    Filed: April 26, 2017
    Publication date: October 15, 2020
    Applicant: YUHAN CORPORATION
    Inventors: Young-Hwan KIM, Tae-Dong HAN, Dong-Hoon KIM, Eun-Hye JUNG, Su-Bin CHOI, Eui-Chul LEE, Won-Ee CHONG, Jin-Hwi PARK, Jun-Chul PARK, Ho-Woong KANG, Ji-Yeong GAL, Chan-Sun PARK, Jong-Gyun KIM, Su-Youn NAM
  • Patent number: 10804892
    Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.
    Type: Grant
    Filed: November 29, 2017
    Date of Patent: October 13, 2020
    Assignee: pSemi Corporation
    Inventors: Alexander Dribinsky, Tae Youn Kim, Dylan J. Kelly, Christopher N. Brindle
  • Publication number: 20200303547
    Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
    Type: Application
    Filed: June 8, 2020
    Publication date: September 24, 2020
    Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
  • Publication number: 20200303180
    Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.
    Type: Application
    Filed: June 9, 2020
    Publication date: September 24, 2020
    Inventors: Young Hoon Kim, Yong Gyu Han, Dae Youn Kim, Tae Hee Yoo, Wan Gyu Lim, Jin Geun Yu
  • Patent number: 10773199
    Abstract: Disclosed are an air conditioner and a control method therefor. The air conditioner includes: a main body; a filter configured to filter impurities externally introduced into the main body; a fan configured to introduce the impurities into the main body through the filter; a sensor configured to detect a filter state value for determining a state of the filter; and a processor configured to determine that a replacement time of the filter arrives when an impurity purification capacity calculated on the basis of the filter state value detected in real time by the sensor is lower than a reference value.
    Type: Grant
    Filed: September 6, 2016
    Date of Patent: September 15, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Jun Hyoun Kwon, Jung Ho Kim, Seong Ryeol Myeong, Baek Youn, Gwan Taek Kim, Dae Yeon Kim, Mu Jung Kim, Tae Wi Kim
  • Patent number: 10749715
    Abstract: Systems and methods for cable transmission are provided. The system includes an up-tilt circuit, a digital-to-analog converter, and a power amplifier. The up-tilt circuit is configured to receive an input digital signal that has a flat spectrum and generate an up-tilted digital signal that has an up-tilted spectrum. The digital-to-analog converter is configured to receive the up-tilted digital signal and to provide an analog signal. The power amplifier is configured to receive the analog signal and amplify the analog signal for cable transmission.
    Type: Grant
    Filed: September 14, 2018
    Date of Patent: August 18, 2020
    Assignee: Avago Technologies International Sales Pte. Limited
    Inventors: Tae Youn Kim, Loke K. Tan, Lin He
  • Publication number: 20200243006
    Abstract: A display device includes a plurality of pixels. Each pixel includes a first transistor that controls an amount of current received from a first power supply voltage line connected via a second node to an organic light emitting diode in response to a voltage of a first node, a second transistor connected between a data line and the second node and that includes a first gate electrode connected to a first scan line, a light emitting line connected to a gate electrode of at least one light emitting transistor located in a current path between the first power supply voltage line and the organic light emitting diode, and a seventh transistor connected between one of at least one second gate electrode of the second transistor and the light emitting line. Accordingly, a threshold voltage of a switching transistor included in each of the plurality of pixels may be negatively shifted.
    Type: Application
    Filed: September 11, 2019
    Publication date: July 30, 2020
    Inventors: Hyo Jung KIM, Tae Young KIM, Yong Sung Park, Jong Woo Park, Mi Seon SEO, Keun Soo LEE, Ki Ju IM, Dae Youn CHO, Young Tae CHOI, Hyun Cheol HWANG
  • Publication number: 20200225688
    Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.
    Type: Application
    Filed: January 15, 2020
    Publication date: July 16, 2020
    Inventors: Tae Youn Kim, Robert Mark Englekirk
  • Patent number: 10714335
    Abstract: Provided is a method of depositing a thin film on a pattern structure of a semiconductor substrate, the method including (a) supplying a source gas; (b) supplying a reactive gas; and (c) supplying plasma, wherein the steps (a), (b), and (c) are sequentially repeated on the semiconductor substrate within a reaction space until a desired thickness is obtained, and a frequency of the plasma is a high frequency of 60 MHz or greater.
    Type: Grant
    Filed: April 10, 2018
    Date of Patent: July 14, 2020
    Assignee: ASM IP Holding B.V.
    Inventors: Young Hoon Kim, Yong Gyu Han, Dae Youn Kim, Tae Hee Yoo, Wan Gyu Lim, Jin Geun Yu
  • Patent number: 10714614
    Abstract: A semiconductor device includes a substrate including a first active region, a second active region and a field region between the first and second active regions, and a gate structure formed on the substrate to cross the first active region, the second active region and the field region. The gate structure includes a p type metal gate electrode and an n-type metal gate electrode directly contacting each other, the p-type metal gate electrode extends from the first active region less than half way toward the second active region.
    Type: Grant
    Filed: August 22, 2018
    Date of Patent: July 14, 2020
    Assignee: Samsung Electronics Co., Ltd.
    Inventors: Ju-Youn Kim, Hyung-Soon Jang, Jong-Mil Youn, Tae-Won Ha
  • Patent number: 10692781
    Abstract: A semiconductor device including a first fin pattern and a second fin pattern, which are in parallel in a lengthwise direction; a first trench between the first fin pattern and the second fin pattern; a field insulating film partially filling the first trench, an upper surface of the field insulating film being lower than an upper surface of the first fin pattern and an upper surface of the second fin pattern; a spacer spaced apart from the first fin pattern and the second fin pattern, the spacer being on the field insulating film and defining a second trench, the second trench including an upper portion and an lower portion; an insulating line pattern on a sidewall of the lower portion of the second trench; and a conductive pattern filling an upper portion of the second trench and being on the insulating line pattern.
    Type: Grant
    Filed: March 22, 2018
    Date of Patent: June 23, 2020
    Assignee: SAMSUNG ELECTRONICS CO., LTD.
    Inventors: Ju Youn Kim, Ji Hwan An, Tae Won Ha, Se Ki Hong
  • Publication number: 20200174046
    Abstract: A system and a method of diagnosing abnormality of a main control unit, in which an auxiliary control unit for diagnosing an abnormal operation of a main control unit is additionally included in a battery management system including one or more battery management modules and the main control unit controlling the battery management module, thereby more stably driving the battery management system.
    Type: Application
    Filed: January 16, 2020
    Publication date: June 4, 2020
    Applicant: LG Chem, Ltd.
    Inventors: Donghyeon Yu, Tae Youn Kim, Lyang Wook Jo, Seunghyun Lee