Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: The present invention relates to a deep-learning based system and method of automatically determining a degree of damage to each area of a vehicle, which is capable of quickly calculating a consistent and reliable quote for vehicle repair by analyzing an image of a vehicle in an accident by using a deep learning-based Mark R-CNN framework and then extracting a component image corresponding to a damaged part, and automatically determining the degree of damage in the extracted component image based on a pre-trained model.

Abstract: The present invention relates to a method and a system for training a model for automatically determining the degree of damage for each vehicle area based on deep learning, which generate a model capable of quickly calculating a consistent and reliable vehicle repair quote by learning so as to automatically extract a picture in which it is possible to determine the degree of damage among accident vehicle pictures by using the Mask R-CNN framework and the Inception V4 network structure based on deep learning, and learning the degree of damage for each type of damage.

Abstract: The present invention relates to a pharmaceutical composition for prevention or treatment of neurodegenerative disease, a composition employing amlexanox, which has been verified for safety through clinical trials. In addition, the present invention relates to a pharmaceutical composition for prevention or treatment of amyloid beta-caused cell damage, the composition employing a phosphodiesterase (PDE) inhibitor inclusive of amlexanox. The composition of the present invention can be advantageously and safely used for ameliorating or treating amyloid beta-caused neurodegenerative disease and cell damage, without worry about side effects.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: A method for producing dimethylolbutanal, the method including: (A) distilling a raw material comprising dimethylolbutanal (DMB) in a distillation column; (B) separating the distilled raw material in the distillation column into a low boiling point component, dimethylolbutanal, and a high boiling point component; and (C) refluxing a portion or all of the high boiling point component to the distillation column by heating the portion or all of the high boiling point component, in which the dimethylolbutanal is separated from a side cut of the distillation column.

Abstract: The present invention relates to fuse diagnosis device and method using voltage distribution, and more particularly, to fuse diagnosis device and method using voltage distribution which connect a resistor unit and a diagnostic resistor to one side of the fuse so as to be connected with the battery in parallel and calculate voltage of a battery applied to the diagnostic resistor by using the voltage distribution to diagnose a state of the fuse, in order to diagnose the states of one or more fuses connected in parallel.

Abstract: A method for producing dimethylolbutanal, the method including: (A) distilling a raw material comprising dimethylolbutanal (DMB) in a distillation column; (B) separating the distilled raw material in the distillation column into a low boiling point component, dimethylolbutanal, and a high boiling point component; and (C) refluxing a portion or all of the high boiling point component to the distillation column by heating the portion or all of the high boiling point component, in which the dimethylolbutanal is separated from a side cut of the distillation column.

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOI) metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: A method and apparatus are disclosed for use in improving the gate oxide reliability of semiconductor-on-insulator (SOD metal-oxide-silicon field effect transistor (MOSFET) devices using accumulated charge control (ACC) techniques. The method and apparatus are adapted to remove, reduce, or otherwise control accumulated charge in SOI MOSFETs, thereby yielding improvements in FET performance characteristics. In one embodiment, a circuit comprises a MOSFET, operating in an accumulated charge regime, and means for controlling the accumulated charge, operatively coupled to the SOI MOSFET. A first determination is made of the effects of an uncontrolled accumulated charge on time dependent dielectric breakdown (TDDB) of the gate oxide of the SOI MOSFET. A second determination is made of the effects of a controlled accumulated charge on TDDB of the gate oxide of the SOI MOSFET.

Abstract: A circuit and method for controlling charge injection in a circuit are disclosed. In one embodiment, the circuit and method are employed in a semiconductor-on-insulator (SOI) Radio Frequency (RF) switch. In one embodiment, an SOI RF switch comprises a plurality of switching transistors coupled in series, referred to as “stacked” transistors, and implemented as a monolithic integrated circuit on an SOI substrate. Charge injection control elements are coupled to receive injected charge from resistively-isolated nodes located between the switching transistors, and to convey the injected charge to at least one node that is not resistively-isolated. In one embodiment, the charge injection control elements comprise resistors. In another embodiment, the charge injection control elements comprise transistors.

Abstract: Systems and methods for cable transmission are provided. The system includes an up-tilt circuit, a digital-to-analog converter, and a power amplifier. The up-tilt circuit is configured to receive an input digital signal that has a flat spectrum and generate an up-tilted digital signal that has an up-tilted spectrum. The digital-to-analog converter is configured to receive the up-tilted digital signal and to provide an analog signal. The power amplifier is configured to receive the analog signal and amplify the analog signal for cable transmission.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: A system and a method of diagnosing abnormality of a main control unit, in which an auxiliary control unit for diagnosing an abnormal operation of a main control unit is additionally included in a battery management system including one or more battery management modules and the main control unit controlling the battery management module, thereby more stably driving the battery management system.

Abstract: The present invention relates to a device and a method for diagnosing a switch using voltage distribution, and more particularly, to a device and a method for diagnosing a switch using voltage distribution, which connect one or more resistors connected in series with the switch in parallel and calculate voltage applied to one resistor among one or more resistors by using the voltage distribution to diagnose a state of the switch based on the calculated voltage, in order to diagnose the state of the switch positioned on a cathode power supply line connecting a battery and a load.

Abstract: An apparatus for generating a steady state positive voltage (PVS) signal and a steady state negative voltage (NVS) signal is presented. The apparatus includes a bias signal generation module for generating a steady state reference voltage signal (RVS) based on a varying supply voltage signal (VDD), the RVS having a voltage level less than the PVS. The apparatus further includes a positive signal generation module (PSGM) generating the PVS, the PSGM including a first capacitor, the PSGM employing the first capacitor to generate a portion of the PVS based on the RVS. The apparatus further includes a negative signal generation module (NSGM) generating the NVS, the NSGM including a second capacitor, the NSGM employing the second capacitor to generate a portion of the NVS based on the RVS.

Abstract: Systems and methods for cable transmission are provided. The system includes an up-tilt circuit, a digital-to-analog converter, and a power amplifier. The up-tilt circuit is configured to receive an input digital signal that has a flat spectrum and generate an up-tilted digital signal that has an up-tilted spectrum. The digital-to-analog converter is configured to receive the up-tilted digital signal and to provide an analog signal. The power amplifier is configured to receive the analog signal and amplify the analog signal for cable transmission.

Abstract: A method for treating stroke in a subject includes administering to the subject a composition that includes a compound having a structure represented by Formula 1 as an active ingredient. The composition may treat a stroke by inhibiting 5? adenosine monophosphate-activated protein kinase (AMPK) activity of zinc neurotoxicity which is a main cause of strokes. The stroke may include hemorrhagic stroke, ischemic stroke or metal toxicity stroke.