Abstract: Proposed is a precursor composition for forming a metal film including a zirconium compound represented by any one of Chemical Formulas 1 to 3 and a hafnium compound represented by any one of Chemical Formulas 4 to 6.

Abstract: A unit page buffer block includes first to fourth page buffer pairs. Each of the page buffer pairs includes a common column decoder block; and an upper page buffer stage and a lower page buffer stage electrically and commonly connected to the common column decoder block. Each of the upper page buffer stages includes an upper selection block; an upper latch block; and an upper cache block. Each of the lower page buffer stage includes a lower selection block; a lower latch block; and a lower cache block. Each of the upper selection blocks includes first to fourth sub-selection blocks. Each of the upper and lower latch blocks includes first to twelfth upper sub-latch blocks. Each of the upper and lower cache blocks includes first to twelfth upper sub-cache blocks. Each of the common column decoder block includes first to third sub-common column decoder blocks arranged in a row direction.

Abstract: The method for converting a near-infrared image into an RGB image includes: (a) receiving near-infrared image data to be converted into an RGB image and inputting the received data to the first network; (b) extracting, by the first network, feature data of a near-infrared image from the input near-infrared image data; and (c) outputting, by the first network, an estimated RGB image, which enables to convert the received near-infrared image data into an RGB image, using the extracted feature data of the near-infrared image, wherein the first network performs knowledge distillation learning by receiving knowledge, which enables to mimic the behavior of extracting the feature data of the near-infrared image and the feature data of the RGB image, from the second network which has received as input data not only near-infrared image data as learning data but also RGB image data taken at the same time as the near-infrared image.

Abstract: The present disclosure relates to a thermoplastic resin composition and an exterior material including the same. The thermoplastic resin composition included 90 to 99.5% by weight of styrene-based resins each including 5 to 30% by weight of acrylate rubber having a DLS average particle diameter of 0.25 to 0.32 ?m or a TEM average particle diameter of 0.2 to 0.27 ?m based on a total weight of the styrene-based resins; and 0.5 to 10% by weight of a polyamide resin, and an exterior material including the thermoplastic resin composition. According to the present disclosure, a low-gloss thermoplastic resin composition having excellent aesthetics, such as softness, luxuriousness, and naturalness, due to uniformity, low gloss, and improvement in surface texture while having mechanical properties and processability equal or superior to those of conventional ASA resins; and an exterior material including the low-gloss thermoplastic resin composition may be provided.

Abstract: A protective case configured to cover a portable electronic device is provided. The protective case may include a first card storage configured to receive a first card, and a second card storage configured to store a second card where the second card storage is spaced apart from the first card storage.

Abstract: An apparatus for estimating a camera pose according to an embodiment of the present disclosure includes a similar image searcher, a clusterer, and an estimator. The similar image searcher searches for a plurality of images similar to an input image, from among a plurality of previously-stored images, based on the input image. The clusterer creates a cluster including at least some similar images meeting predetermined conditions, from among the plurality of similar images, based on viewpoint data tagged to each of the plurality of similar images. The estimator estimates a pose of a camera that has generated the input image, based on the cluster.

Abstract: A system for predicting a negative pressure of a brake booster of a vehicle includes: a driving information detector detecting driving information related to driving of the vehicle; and a controller determining a negative pressure of an intake manifold based on a pressure of the intake manifold and an atmospheric pressure which is the driving information and including a booster negative pressure predictor predicting the negative pressure of the brake booster by integrating over time a change rate according to a charging rate and a discharging rate of the negative pressure determined using a negative pressure of the brake booster determined in a previous cycle according to a logic for predicting the negative pressure of the brake booster and the negative pressure of the intake manifold of a current cycle and an imitated brake pedal force signal of the current cycle imitating an acceleration of the vehicle.

Abstract: A tiling display apparatus includes a set board configured to generate a control command signal and a plurality of display modules connected to one another through a first interface circuit based on a serial communication scheme, for executing a target operation corresponding to the control command signal, and the first interface circuit is implemented with a bidirectional serial interface having a feedback loop type between adjacent display modules of the plurality of display modules.

Abstract: An infusion flow regulator includes: a main body having an inlet through which fluid is introduced and an outlet through which the fluid is discharged; and a rotary dial rotatably coupled to the main body, with a sealing member interposed therebetween, so as to regulate a flow rate of the fluid, in which the rotary dial includes a regulating flow path having a shape of a recessed groove in cross section with a first width and a first height, and the regulating flow path includes a first region in which the first width is constant and the first height is decreased, and a second region in which both the first width and the first height are decreased. By the aforementioned configuration, the infusion flow regulator for the fluid can accurately regulate the flow rate even in a region where the flow rate of the fluid is very small.

Abstract: The present disclosure discloses a substrate heat-treating apparatus including a process chamber in which a flat substrate to be heat treated is placed, the process chamber comprising a beam transmitting plate placed below the flat substrate and an infrared transmitting plate placed above the flat substrate; a beam irradiating module for irradiating a VCSEL beam having a single wavelength to a lower surface of the flat substrate through the beam transmitting plate; and an emissivity measuring configured to measure the laser beam reflected from the lower surface or an upper surface the flat substrate, thereby measuring the emissivity of the flat substrate.

Abstract: The present invention relates to a semi-automatic scanner for ultrasonic inspection of a branch pipe weld that has a small size and is able to perform an inspection while moving in a state of being attached to a test object by a magnetic force, thereby being applied to fittings having various shapes, such as a branch pipe and an elbow.

Abstract: Disclosed is a carbon dioxide absorbent and a carbon dioxide separation method using the same that greatly reduces energy consumption due to a small amount of latent heat required in regeneration of absorbents, enhances CO2 absorption rate, undergoes almost no thermal denaturation even at high temperatures while absorbing carbon dioxide, and results in a considerable reduction of the cost associated with absorption of carbon dioxide.

Abstract: A unit page buffer block includes first to fourth page buffer pairs. Each of the page buffer pairs includes a common column decoder block; and an upper page buffer stage and a lower page buffer stage electrically and commonly connected to the common column decoder block. Each of the upper page buffer stages includes an upper selection block; an upper latch block; and an upper cache block. Each of the lower page buffer stage includes a lower selection block; a lower latch block; and a lower cache block. Each of the upper selection blocks includes first to fourth sub-selection blocks. Each of the upper and lower latch blocks includes first to twelfth upper sub-latch blocks. Each of the upper and lower cache blocks includes first to twelfth upper sub-cache blocks. Each of the common column decoder block includes first to third sub-common column decoder blocks arranged in a row direction.

Abstract: A semiconductor memory device includes a memory cell array disposed over a substrate extending in a first direction and a second direction intersecting with the first direction in a first semiconductor layer, and including a plurality of cell units and at least two via regions that are arranged in the second direction, wherein a width of each of the at least two via regions in the second direction is a multiple of a width of each of the plurality of cell units in the second direction.

Abstract: A memory device includes an active region with a drain; a plurality of memory blocks arranged in a first direction; and a plurality of pass transistors formed in the active region and sharing the drain, each one of the plurality of pass transistors configured to transfer an operating voltage from the drain to a corresponding one of the plurality of memory blocks in response to a block select signal. The plurality of pass transistors is divided into first pass transistors and second pass transistors. A channel length direction of the first pass transistors and a channel length direction of the second pass transistors are different from each other.

Abstract: A semiconductor device includes a first connection pattern; a bit line disposed over the first connection pattern in a vertical direction; and a bit-line contact pad, disposed in a first layer between the bit line and the first connection pattern to electrically couple the bit line to the first connection pattern, and formed as an island when viewed along the vertical direction. A predetermined number of the bit-line contact pads are spaced apart from each other by a predetermined distance in a first direction, when viewed along the vertical direction.

Abstract: A semiconductor device is disclosed, which relates to a three-dimensional (3D) semiconductor memory device. The semiconductor device includes a first connection pattern, a bit line disposed over the first connection pattern in a vertical direction, and a bit-line contact pad, disposed in a first layer between the bit line and the first connection pattern to electrically couple the bit line to the first connection pattern so that the bit-line contact pad, and formed as an island when viewed along the vertical direction.

Abstract: An apparatus for visualizing a health status information of each individual by using a health space model includes a memory storing a health status information visualization program, and a processor configured to execute the visualization program. The visualization program inputs multidimensional data on the health status of each individual to the health space model to visually display a position of each individual in a two-dimensional health space, the health space model includes a first ordinal regression deep neural network model for outputting a first health status value based on multidimensional data of a first group and a second ordinal regression deep neural network model for outputting a second health status value based on multidimensional data of a second group, and the visualization program displays the health status information in a two-dimensional health space.

Abstract: A semiconductor memory device includes a stacked structure including a plurality of conductive layers and a plurality of interlayer insulating layers, which are alternately stacked on a substrate; stepped grooves provided in the stacked structure, the stepped grooves having different depths from each other; and an opening portion penetrating the stacked structure to contact the substrate and having steps on sidewalls, the steps having heights corresponding to depth differences between stepped grooves.

Abstract: A method for manufacturing a semiconductor memory device may include: forming a pre-stack by alternately stacking a plurality of first dielectric layers and a plurality of second dielectric layers over a substrate which has a cell area and a connection area; forming a plurality of slits which pass through the pre-stack, such that a distance between the slits in the connection area is larger than a distance between the slits in the cell area; removing the second dielectric layers in the cell area and in a periphery of the connection area adjacent to the slits while leaving the second dielectric layer in a center of the connection area by injecting an etching solution for removing the second dielectric layers, through the slits; and forming electrode layers in spaces from which the second dielectric layers are removed.