Patents by Inventor Takafumi Nakamura

Takafumi Nakamura has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20080108323
    Abstract: According to an aspect of the invention, there is provide an information processing apparatus, comprising: a first control unit configured to judge whether or not the information processing apparatus is in a state where a remote lock operation is impossible; an input unit configured to accept input of authentification information in case that the first control unit judges that the information processing apparatus is in a state where the remote lock operation is impossible; an authenticate unit configured to authenticate whether or not the input-accepted authentification information is coincident with previously stored authentification information; and a second control unit configured to prohibit a transmission/reception of data between the information processing apparatus and an information read device disposed adjacent to the information processing apparatus.
    Type: Application
    Filed: January 25, 2007
    Publication date: May 8, 2008
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Yasuhiko Abe, Takafumi Nakamura, Munehisa Tomioka, Daizo Ichien
  • Patent number: 7329903
    Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.
    Type: Grant
    Filed: March 8, 2006
    Date of Patent: February 12, 2008
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Nitta, Takafumi Nakamura, Kuniaki Konno, Yasuhiko Akaike, Yoshiki Endo, Katsufumi Kondo
  • Publication number: 20080024770
    Abstract: Provided is a differential refractive index detector having a light receiving element, a zero glass, a zero glass driving unit and a storing portion, and is capable of performing purging operation thoroughly based on a unified standard. The light receiving element receives a measuring light passing through cells (S, R) to generate a slit image. The zero glass makes the slit image parallelly move on the light receiving element. The zero glass driving unit makes the zero glass rotate. The storing portion stores a rotating angle of the zero glass when the same solution fills up the two cells (S, R). When a purging operation for replacing a reference solution in the flow cell is performed, the stored rotating angle is taken as a standard value for being compared with a current rotating angle of the zero glass. If the two angles are the same, the purging operation is finished.
    Type: Application
    Filed: June 20, 2007
    Publication date: January 31, 2008
    Applicant: SHIMADZU CORPORATION
    Inventor: Takafumi NAKAMURA
  • Publication number: 20070147032
    Abstract: A visible light communication oriented illumination device includes: a transmitting section including a light emitting element which emits an excitation light, a first wavelength-converting material, and a second wavelength-converting material; and a receiving section including a receiver and a demodulator. The first wavelength-converting material absorbs the excitation light and emits a first light. The second wavelength-converting material absorbs the excitation light and emits a second light which is different in wavelength and has a shorter 1/10 persistence time than the first light. The transmission section is configured to emit an illuminating light including the first and second lights. The receiver receives the second light and transforms the second light into an electrical signal, and the demodulator receives the electrical signal outputted from the receiving section and outputs a signal corresponding to an information transmitted from the transmitting section.
    Type: Application
    Filed: December 14, 2006
    Publication date: June 28, 2007
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Chisato Furukawa, Takafumi Nakamura
  • Publication number: 20070076192
    Abstract: Adjustment of a differential refractometer includes the steps of (a) equally focusing a slit image on separate portions of a photodetector, (b) decreasing the quantity of light of measuring beam, (c) making parallel movement of the slit image on the photodetector by a predetermined displacement, and (d) increasing the quantity of light of the measuring beam.
    Type: Application
    Filed: September 19, 2006
    Publication date: April 5, 2007
    Applicant: SHIMADZU CORPORATION
    Inventor: Takafumi Nakamura
  • Publication number: 20070052181
    Abstract: It is an object of the present invention to provide a backup ring capable of preventing the backup ring from being damaged by a protrusion of a packing. A backup ring 10 comprises a first ring portion 11 of an inner peripheral side and a second ring portion 12 of an outer peripheral side, the first ring portion 11 and the second ring portion 12 are respectively provided with tapered surfaces, the tapered surfaces slide on each other, the first ring portion 11 and the second ring portion 12 can move in a radial direction, a diameter size of the backup ring 10 is set such that an inner diameter of the backup ring 10 is smaller than a diameter size of a mounting space and an outer diameter of the backup ring 10 is greater than the diameter size of the mounting space.
    Type: Application
    Filed: September 7, 2006
    Publication date: March 8, 2007
    Inventor: Takafumi Nakamura
  • Publication number: 20060269449
    Abstract: A reaction tank 15 for heating a sample solution containing glycoprotein in an alkali solution to separate sugar chains, and two cartridges 17a and 17b filled with ion exchange resin are provided, and the sample solution transported from the reaction tank 15 is subjected to neutralization treatment by passing the sample solution through the cartridges. The cartridges 17a and 17b are connected in parallel by two flow channel switching valves 16a and 16b. By switching the valves 16a and 16b, selection of a cartridge to be used for the neutralization treatment is made, and at the same time, acid and water are passed through the cartridge which is not in use, in order to allow regeneration of the ion exchange resin in the cartridge.
    Type: Application
    Filed: May 25, 2006
    Publication date: November 30, 2006
    Applicant: SHIMADZU CORPORATION
    Inventors: Takafumi Nakamura, Yusuke Osaka, Kazuaki Kakehi
  • Patent number: 7119857
    Abstract: There is disclosed a method of manufacturing a flat display in which a switching element (TFT) having caused a display pixel defect can securely be repaired. The flat display of the present invention is formed by forming a semiconductor layer and an auxiliary capacity electrode in the same layer on a glass substrate, forming a gate insulating film on a top surface, forming a gate electrode and an auxiliary capacity feeder in the same layer on the top surface, forming an interlayer insulating film on a top surface, and forming a source electrode and drain electrode on a top surface. Since a wiring portion between the auxiliary capacity electrode and the pixel electrode is irradiated with laser to increase the resistance of a wiring portion, the pixel electrode fails to be influenced by a voltage of the auxiliary capacity feeder, occurrence of the display pixel defect can be reduced, and manufacture yield can be enhanced.
    Type: Grant
    Filed: September 22, 2000
    Date of Patent: October 10, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Takafumi Nakamura, Yasuyuki Hanazawa
  • Publication number: 20060220053
    Abstract: A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.
    Type: Application
    Filed: March 30, 2006
    Publication date: October 5, 2006
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Chisato Furukawa, Takafumi Nakamura
  • Publication number: 20060151798
    Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.
    Type: Application
    Filed: March 9, 2006
    Publication date: July 13, 2006
    Inventors: Koichi Nitta, Takafumi Nakamura, Kuniaki Konno, Yasuhiko Akaike, Yoshiki Endo, Katsufumi Kondo
  • Publication number: 20060145171
    Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.
    Type: Application
    Filed: March 8, 2006
    Publication date: July 6, 2006
    Inventors: Koichi Nitta, Takafumi Nakamura, Kuniaki Konno, Yasuhiko Akaike, Yoshiki Endo, Katsufumi Kondo
  • Patent number: 7038245
    Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.
    Type: Grant
    Filed: March 13, 2003
    Date of Patent: May 2, 2006
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Koichi Nitta, Takafumi Nakamura, Kuniaki Konno, Yasuhiko Akaike, Yoshiki Endo, Katsufumi Kondo
  • Publication number: 20050271621
    Abstract: Control apparatus forcefully stops inverter and inverter when DC/DC converter is anomalously stopped. Additionally, when one of inverters is anomalously stopped while DC/DC converter is normal, control apparatus forcefully stops the other inverter. Then, when a recovery condition is satisfied after the other inverter is forcefully stopped, control apparatus recovers the other inverter.
    Type: Application
    Filed: May 2, 2003
    Publication date: December 8, 2005
    Inventors: Roberto Cattaneo, Sompong Vongpunsawad, Stephen Russell, Takafumi Nakamura
  • Publication number: 20050017250
    Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.
    Type: Application
    Filed: June 9, 2004
    Publication date: January 27, 2005
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Koichi Nitta, Takafumi Nakamura, Akihiro Fujiwara, Kuniaki Konno, Yasuharu Sugawara
  • Publication number: 20030197191
    Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.
    Type: Application
    Filed: March 13, 2003
    Publication date: October 23, 2003
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Koichi Nitta, Takafumi Nakamura, Kuniaki Konno, Yasuhiko Akaike, Yoshiki Endo, Katsufumi Kondo
  • Patent number: 6596612
    Abstract: An object of the present invention is to provide with a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed. According to the present invention, after forming an amorphous silicon layer on a glass substrate, heat treatment and the like is performed to convert the amorphous silicon layer into a polycrystalline silicon layer. At this time, a particle having an abnormal grain diameter is generated in a polycrystalline silicon layer under the influence of foreign particles in a glass substrate, and a TFT having a different threshold value may be possibly formed.
    Type: Grant
    Filed: March 1, 2002
    Date of Patent: July 22, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Minoru Ito, Takafumi Nakamura, Masanori Harada
  • Patent number: 6515720
    Abstract: A coupling line connecting a pixel electrode to a source electrode and a storage capacitance electrode includes a wiring portion which does not overlap a storage capacitance line or a storage capacitance electrode. Thus, the wiring portion is exposed when viewed from the rear side of the array substrate. Therefore, even if a short circuit occurs between the storage capacitance line and the coupling line or the storage capacitance electrode, a pixel including the short-circuit defect can be improved to a half-lighted state by radiating the laser beam to the wiring portion to electrically cut it.
    Type: Grant
    Filed: July 14, 1999
    Date of Patent: February 4, 2003
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Tetsuya Iizuka, Takafumi Nakamura, Yasuyuki Hanazawa, Akihiro Kaga
  • Publication number: 20020098665
    Abstract: An object of the present invention is to provide with a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed.
    Type: Application
    Filed: March 1, 2002
    Publication date: July 25, 2002
    Applicant: Kabushiki Kaisha Toshiba
    Inventors: Minoru Ito, Takafumi Nakamura, Masanori Harada
  • Patent number: 6372612
    Abstract: An object of the present invention is to provide a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed. According to the present invention, after forming an amorphous silicon layer on a glass substrate, heat treatment and the like is performed to convert the amorphous silicon layer into a polycrystalline silicon layer. At this time, a particle having an abnormal grain diameter is generated in a polycrystalline silicon layer under the influence of foreign particles in a glass substrate, and a TFT having a different threshold value may be formed.
    Type: Grant
    Filed: September 25, 2000
    Date of Patent: April 16, 2002
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Minoru Ito, Takafumi Nakamura, Masanori Harada
  • Patent number: 6229834
    Abstract: A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.
    Type: Grant
    Filed: December 18, 1997
    Date of Patent: May 8, 2001
    Assignee: Kabushiki Kaisha Toshiba
    Inventors: Katsuhiko Nisitani, Kazumi Unno, Masayuki Ishikawa, Ryo Saeki, Takafumi Nakamura, Masanobu Iwamoto