Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Abstract: According to an aspect of the invention, there is provided a semiconductor light-emitting element including a substrate, a first stripe, the first stripe including a first n-type clad layer, a first active layer and a first p-type clad layer on the substrate and a second stripe, the second stripe being formed on the substrate and having a different direction for the first stripe direction, the second stripe including a second n-type clad layer, a second active layer and a second p-type clad layer, the second n-type clad layer, the second active layer and the second p-type clad layer substantially being identical with the first n-type clad layer, the first active-layer and the first p-type clad layer, respectively.

Abstract: A semiconductor light emitting element comprising: a plurality of light-emitting-layer forming portions each of which includes a pn junction capable of emitting light of a certain wavelength, and which are separated from one another with a translucent resin formed on the side portions of the light-emitting-layer forming portions; a metal film disposed on first surfaces of the light-emitting-layer forming portions; a conductive substrate bonded to the metal film; a lower electrode formed on a surface of the conductive substrate, the surface being opposite to the surface to which the metal film is bonded; a transparent electrode which is connected to second surfaces, opposite to the first surfaces, of the light-emitting-layer forming portions, and which is substantially transparent to the certain wavelength; and an upper electrode formed above the second surfaces of the light-emitting-layer forming portions with the transparent electrode sandwiched in between.

Abstract: According to an aspect of the invention, there is provide an information processing apparatus, comprising: a first control unit configured to judge whether or not the information processing apparatus is in a state where a remote lock operation is impossible; an input unit configured to accept input of authentification information in case that the first control unit judges that the information processing apparatus is in a state where the remote lock operation is impossible; an authenticate unit configured to authenticate whether or not the input-accepted authentification information is coincident with previously stored authentification information; and a second control unit configured to prohibit a transmission/reception of data between the information processing apparatus and an information read device disposed adjacent to the information processing apparatus.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: Provided is a differential refractive index detector having a light receiving element, a zero glass, a zero glass driving unit and a storing portion, and is capable of performing purging operation thoroughly based on a unified standard. The light receiving element receives a measuring light passing through cells (S, R) to generate a slit image. The zero glass makes the slit image parallelly move on the light receiving element. The zero glass driving unit makes the zero glass rotate. The storing portion stores a rotating angle of the zero glass when the same solution fills up the two cells (S, R). When a purging operation for replacing a reference solution in the flow cell is performed, the stored rotating angle is taken as a standard value for being compared with a current rotating angle of the zero glass. If the two angles are the same, the purging operation is finished.

Abstract: A visible light communication oriented illumination device includes: a transmitting section including a light emitting element which emits an excitation light, a first wavelength-converting material, and a second wavelength-converting material; and a receiving section including a receiver and a demodulator. The first wavelength-converting material absorbs the excitation light and emits a first light. The second wavelength-converting material absorbs the excitation light and emits a second light which is different in wavelength and has a shorter 1/10 persistence time than the first light. The transmission section is configured to emit an illuminating light including the first and second lights. The receiver receives the second light and transforms the second light into an electrical signal, and the demodulator receives the electrical signal outputted from the receiving section and outputs a signal corresponding to an information transmitted from the transmitting section.

Abstract: Adjustment of a differential refractometer includes the steps of (a) equally focusing a slit image on separate portions of a photodetector, (b) decreasing the quantity of light of measuring beam, (c) making parallel movement of the slit image on the photodetector by a predetermined displacement, and (d) increasing the quantity of light of the measuring beam.

Abstract: It is an object of the present invention to provide a backup ring capable of preventing the backup ring from being damaged by a protrusion of a packing. A backup ring 10 comprises a first ring portion 11 of an inner peripheral side and a second ring portion 12 of an outer peripheral side, the first ring portion 11 and the second ring portion 12 are respectively provided with tapered surfaces, the tapered surfaces slide on each other, the first ring portion 11 and the second ring portion 12 can move in a radial direction, a diameter size of the backup ring 10 is set such that an inner diameter of the backup ring 10 is smaller than a diameter size of a mounting space and an outer diameter of the backup ring 10 is greater than the diameter size of the mounting space.

Abstract: A reaction tank 15 for heating a sample solution containing glycoprotein in an alkali solution to separate sugar chains, and two cartridges 17a and 17b filled with ion exchange resin are provided, and the sample solution transported from the reaction tank 15 is subjected to neutralization treatment by passing the sample solution through the cartridges. The cartridges 17a and 17b are connected in parallel by two flow channel switching valves 16a and 16b. By switching the valves 16a and 16b, selection of a cartridge to be used for the neutralization treatment is made, and at the same time, acid and water are passed through the cartridge which is not in use, in order to allow regeneration of the ion exchange resin in the cartridge.

Abstract: There is disclosed a method of manufacturing a flat display in which a switching element (TFT) having caused a display pixel defect can securely be repaired. The flat display of the present invention is formed by forming a semiconductor layer and an auxiliary capacity electrode in the same layer on a glass substrate, forming a gate insulating film on a top surface, forming a gate electrode and an auxiliary capacity feeder in the same layer on the top surface, forming an interlayer insulating film on a top surface, and forming a source electrode and drain electrode on a top surface. Since a wiring portion between the auxiliary capacity electrode and the pixel electrode is irradiated with laser to increase the resistance of a wiring portion, the pixel electrode fails to be influenced by a voltage of the auxiliary capacity feeder, occurrence of the display pixel defect can be reduced, and manufacture yield can be enhanced.

Abstract: A semiconductor light emitting device may include a first lead; a second lead; a first semiconductor light emitting element mounted on the first lead, being configured to emit a light having an optical emission spectrum no more than 400 nm from a light extraction surface of the first semiconductor light emitting element; a second semiconductor light emitting element mounted on the second lead, being configured to emit a light having a peak wavelength in no less than 550 nm; an ultraviolet absorbing layer configured to cover the light extraction surface of the first semiconductor light emitting element; and a sealing resin configured to cover the ultraviolet absorbing layer, first semiconductor light emitting element and the second semiconductor light emitting element.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: Control apparatus forcefully stops inverter and inverter when DC/DC converter is anomalously stopped. Additionally, when one of inverters is anomalously stopped while DC/DC converter is normal, control apparatus forcefully stops the other inverter. Then, when a recovery condition is satisfied after the other inverter is forcefully stopped, control apparatus recovers the other inverter.

Abstract: A light emitting element comprises a GaP substrate and a mesa portion. The GaP substrate includes a major surface inclined to the <011> direction from the {100} plane and a side surface covered with inequalities substantially. The mesa portion has a light emitting multi-layer of InGaAlP based material provided on the major surface. A part of a light emitted from the light emitting multi-layer is extracted through the side surface of the GaP substrate.

Abstract: For the purpose of enhancing the light extracting efficiency, improving the production yield and elongating the lifetime of a semiconductor light emitting element or a semiconductor light emitting device using the element, a semiconductor light emitting element comprises: a light emitting layer that emits light; and a substrate transparent to the light emitted from the light emitting layer. The substrate defines a top surface supporting the light emitting layer thereon; a bottom surface opposed to the top surface and side surfaces connecting the top surface and the bottom surface. Each of the side surfaces is composed of first side surface extending from the top surface toward the bottom surface, second side surface extending from the first side surface toward the bottom surface, and third side surface extending from the second side surface toward the bottom surface.

Abstract: An object of the present invention is to provide with a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed. According to the present invention, after forming an amorphous silicon layer on a glass substrate, heat treatment and the like is performed to convert the amorphous silicon layer into a polycrystalline silicon layer. At this time, a particle having an abnormal grain diameter is generated in a polycrystalline silicon layer under the influence of foreign particles in a glass substrate, and a TFT having a different threshold value may be possibly formed.

Abstract: A coupling line connecting a pixel electrode to a source electrode and a storage capacitance electrode includes a wiring portion which does not overlap a storage capacitance line or a storage capacitance electrode. Thus, the wiring portion is exposed when viewed from the rear side of the array substrate. Therefore, even if a short circuit occurs between the storage capacitance line and the coupling line or the storage capacitance electrode, a pixel including the short-circuit defect can be improved to a half-lighted state by radiating the laser beam to the wiring portion to electrically cut it.