Abstract: An object of the present invention is to provide with a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed.

Abstract: An object of the present invention is to provide a method for manufacturing a semiconductor circuit by which a TFT including particles having a different threshold value is prevented from being operated even if such a TFT is locally formed. According to the present invention, after forming an amorphous silicon layer on a glass substrate, heat treatment and the like is performed to convert the amorphous silicon layer into a polycrystalline silicon layer. At this time, a particle having an abnormal grain diameter is generated in a polycrystalline silicon layer under the influence of foreign particles in a glass substrate, and a TFT having a different threshold value may be formed.

Abstract: A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.

Abstract: A display panel is to be fixed to a light collecting plate having a plurality of lenses and includes a matrix array of pixel electrodes opposed to the lenses of the light collecting plate, a plurality of electrode wiring lines formed along rows and columns of the pixel electrodes, and a driver circuit formed outside a display area corresponding to the matrix array of the pixel electrodes, for driving the pixel electrodes via the electrode wirings. Particularly, in the display panel, a plurality of alignment marks for positional adjustment of aligning the focal spots of the lenses with the pixel electrodes are arranged to be opposed to the lenses and separated from the display area by a distance corresponding to an integer number of times of a pitch of the pixel electrodes in at least one of row and column directions of the pixel electrodes.

Abstract: A semiconductor light emitting element exhibiting a characteristic of deflected luminous intensity distribution, a semiconductor light emitting device capable of making, even when the element is off the center, a luminous center close to the center, and an element scribing method having a high element separation rate without causing a crack and chipping of pellet edges. The semiconductor light emitting element involves the use of a scribed pellet 10 into which a wafer including a semiconductor layer such as a luminous layer that is stacked on a compound semiconductor substrate inclined at 5.degree. through 20.degree. to a surface (100) in a orientation [011], is subjected to an element separation process by a scribing method.

Abstract: A semiconductor light emitting device has a double heterostructure. The device is composed of an active layer and clad layers that sandwich the active layer. At least one of the clad layers has a multilayer structure having at least two element layers. The Al mole fraction of an element layer, which is proximal to the active layer, of the multilayer structure is smaller than that of the other element layer thereof distal from the active layer. This arrangement improves the crystal quality of an interface between the active layer and the clad layer of multilayer structure and effectively confines carriers in the active layer.

Abstract: A liquid crystal display apparatus for controlling light transmittance corresponding to various defective pixel modes such as luminance point defects and a fabrication method thereof are disclosed. The orientation film corresponding to a defective display pixel has protrusion portions that are larger than the orientation film corresponding to each of the normal display pixels. The height and pitches of the protrusion portions are preferably 0.1 .mu.m or more and 10 .mu.m or less, respectively.

Abstract: A transition state detecting device of the invention is a device which is applied to the output stage of a detecting circuit such as a spectrum analyzer so as to display the waveform of an input signal in the form of a parameter and evaluate its characteristics. In order to perform real-time, quantitative measurement, the device includes a differentiating means (1) for differentiating an input signal and outputting a differential signal representing a transition state of the input signal, and a detecting means (2) for detecting the peak value of the differential signal output from the differentiating means and outputting a parameter corresponding to the transition state of the input signal.