Abstract: A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.

Abstract: An optical waveguide contains a core layer in which light is transferred, and a cladding layer that clads the core layer. The core layer has an inclined end surface across a direction where the core layer extends. The inclined end surface reflects light from the core layer to outside or light from the outside to the core layer. The cladding layer has an end portion that extends to the inclined surface of the core layer. The cladding layer includes a system that prevents an adhesive agent from being flown out.

Abstract: The present invention provides a laser diode realizing improved light detection precision. The laser diode includes a stack structure in which a first semiconductor layer of a first conduction type, an active layer, and a second semiconductor layer of a second conduction type are included in this order; a photodetection layer; and a plurality of light absorption layers provided on the corresponding position of antinodes or nodes of standing waves of light output from the active layer.

Abstract: An optical waveguide module has a planar type optical waveguide having at least one core, an optical fiber for connecting with the core of the optical waveguide optically, and an optical element for connecting the core of the optical waveguide optically. The optical waveguide includes a groove for allowing an optical fiber to be inserted thereinto and aligning the optical fiber with the core to connect the optical fiber and the core optically. A first edge of the optical waveguide, which traverses the core, is tapered and an edge of the core, which is exposed in the first edge of the optical waveguide, is formed as a reflection surface. A planar type optical element is mounted as the optical element at a position that is opposite to the reflection surface to connect the planar type optical element with the core optically through the reflection surface.

Abstract: A core layer has a light entrance region and a light exit region, said light entrance region having a width greater than said light exit region. The light entrance region has at least a side surface shaped as a reflecting surface. The light entrance region has an end having a parabolic shape. An LED is disposed in contact with a lower surface of the light entrance region. Signal light is introduced from the LED into the light entrance region with increased light entrance efficiency, and is highly efficiently reflected by the side surface of the light entrance region for higher light collecting efficiency.

Abstract: A semiconductor light-emitting device includes: a semiconductor light-emitting element including a first conductive type semiconductor layer, an active layer including a light-emitting region, and a second conductive type semiconductor layer in this order; a filter having a transmission characteristic in which the transmittance in a direction parallel to the optical axis of induced emission light of light outputted from the semiconductor light-emitting element is higher than the transmittance in a direction different from the optical axis; and a semiconductor photodetector including a light-absorbing layer, the light-absorbing layer absorbing a part of light passing through the filter, wherein the filter and the semiconductor photodetector are laminated in this order on the second conductive type semiconductor layer of the semiconductor light-emitting element, and are formed with the semiconductor light-emitting element as one unit.

Abstract: An optical transmitting and receiving module for an optical waveguide performs both a transmitting operation and a receiving operation simultaneously. The linear first waveguide is provided such that one side is coupled to an optical fiber and the other side is coupled to a light receiving element. A second waveguide is coupled so as to meet and make an acute angle with the first waveguide. The second waveguide is shaped with a tapered portion adjacent to the first waveguide.

Abstract: An edge-emitting semiconductor laser includes a resonator structure having an active layer. A low reflection three-layer film is provided on in emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed in an exemplary embodiment by sequentially stacking a first Al2O3 layer having a thickness of 10 nm, an Si3N4 film having a thickness of 190 nm, and a second Al2O3 layer having a thickness of 10 nm.

Abstract: Disclosed herein is a semiconductor light emitting apparatus that includes: a semiconductor light emitting device having a first semiconductor laminate structure including a light emitting region, and a light outgoing window permitting the light emitted from the light emitting region to go out therethrough in the lamination direction; a light transmitting part provided in a region corresponding to the light emitting region; a metal part provided in a region, corresponding to an outer peripheral region of the light emitting region, of the first semiconductor laminate structure; and a semiconductor light detector having a second semiconductor laminate structure including a light absorbing layer for absorbing a part of the light incident from the lamination direction. In the apparatus, the semiconductor light emitting device, a layer including the light transmitting part and the metal part, and the semiconductor light detector are integrally formed in the state of being laminated in this order.

Abstract: An optical module has at least two optical elements mounted in parallel with each other. The module also has a first electrode pad which is formed between the paralleled optical elements and grounded to a ground potential and a second electrode pad which is arranged along a line that is intersected with a direction in which the optical elements are arranged, which faces the first electrode pad and is grounded to the ground potential. The module further has a conductive shield member which is connected to the first electrode pad and the second electrode pad and placed between electrical signal transmission paths each connected to the optical elements.

Abstract: The present invention is to provide an optical waveguide capable of allowing a desired incident light to efficiently propagate towards the light emission side and to emit therefrom, and capable of preventing unnecessary incident light from propagating, and in providing a light source module and an optical information processing apparatus using the optical waveguide. The optical waveguide comprises a bonded member of a substrate, a core layer and cladding layers, configured to introduce an incident line coming into the core layer toward a light emission side thereof. A metal layer for preventing the incident light coming into the cladding layer from propagating to the light emission side is formed in a pattern intercepting a sectional plane of light transmission of said cladding layer.

Abstract: An optical waveguide module has a planar type optical waveguide having at least one core, an optical fiber for connecting with the core of the optical waveguide optically, and an optical element for connecting the core of the optical waveguide optically. The optical waveguide includes a groove for allowing an optical fiber to be inserted thereinto and aligning the optical fiber with the core to connect the optical fiber and the core optically. A first edge of the optical waveguide, which traverses the core, is tapered and an edge of the core, which is exposed in the first edge of the optical waveguide, is formed as a reflection surface. A planar type optical element is mounted as the optical element at a position that is opposite to the reflection surface to connect the planar type optical element with the core optically through the reflection surface.

Abstract: An edge-emitting type 650 nm band red semiconductor laser device is provided, which includes a resonator structure having an active layer on a semiconductor substrate. A low reflection three-layer film is provided on an emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed by sequentially stacking a first Al2O3 film having a thickness of 10 nm, an Si3N4 film having a thickness of 190 nm, and a second Al2O3 film having a thickness of 10 nm on the emitting edge face by a sputtering process. The edge reflectance at the emitting edge face is set to 10%. The high reflection multi-layer film is formed by alternatively stacking Al2O3 films and a-Si films on the rear edge face.

Abstract: An optical waveguide module provides light intensity detection is comprised of a light emitting portion, a substrate and a clad formed over the substrate wherein a first core and a second core are covered with the clad, the first and second cores being formed of a material having a higher refractive index than that of the clad. A first reflection surface is formed at an incident side end portion of the first core for reflecting light emitted from a light emitting portion in the guiding direction of the first core and a second reflection surface is formed as an incident side end portion of the second core for reflecting light emitted from the light emitting portion in the guiding direction of the second core. A light receiving portion receives and detects an amount of light in order to control the intensity of the emitted light.

Abstract: To provide an optical waveguide and an optical transmitting and receiving module able to perform a transmitting operation and a receiving operation simultaneously, wherein a linearly first waveguide 21 that one side is coupled to an optical fiber 3 and the other side is coupled to a light receiving element 4, and a second waveguide 22 that one side is coupled so as to make an acute angle ? with the side of the first waveguide 21 to be coupled to the light receiving element 4 and the other is coupled to a light emitting element 5 are provided. By controlling a shape of the second waveguide 22, the receiving signal light from the optical fiber 3 is received to the light receiving element 4, and is not guided to the second waveguide 22. Therefore, the receiving operation and the transmitting operation can be preformed at the same time.

Abstract: An edge-emitting type 650 nm band red semiconductor laser device is provided, which includes a resonator structure having an active layer on a semiconductor substrate. A low reflection three-layer film is provided on an emitting edge face of the resonator structure and a high reflection multi-layer film is provided on a rear edge face of the resonator structure. The low reflection three-layer film is formed by sequentially stacking a first Al203 film having a thickness of 10 nm, a SiN4 film having a thickness of 190 nm, and a second Al203 film having a thickness of 10 nm on the emitting edge face by a sputtering process.

Abstract: The present invention is to provide an optical waveguide capable of allowing a desired incident light to efficiently propagate towards the light emission side and to emit therefrom, and capable of preventing unnecessary incident light from propagating, and in providing a light source module and an optical information processing apparatus using the optical waveguide. The optical waveguide comprises a bonded member of a substrate, a core layer and cladding layers, configured to introduce an incident line coming into the core layer toward a light emission side thereof. A metal layer for preventing the incident light coming into the cladding layer from propagating to the light emission side is formed in a pattern intercepting a sectional plane of light transmission of said cladding layer.

Abstract: A core layer has a light entrance region and a light exit region, said light entrance region having a width greater than said light exit region. The light entrance region has at least a side surface shaped as a reflecting surface. The light entrance region has an end having a parabolic shape. An LED is disposed in contact with a lower surface of the light entrance region. Signal light is introduced from the LED into the light entrance region with increased light entrance efficiency, and is highly efficiently reflected by the side surface of the light entrance region for higher light collecting efficiency.

Abstract: An optical waveguide module for easily detecting incident light intensity excelling in high integration, comprising a light emitting portion, a substrate, clad formed on the substrate, and a first core and a second core covered with the clad and formed by a material having a higher refractive index than that of the clad; wherein a first reflection surface is formed as an incident side end portion of the first core for reflecting a light emitted from the light emitting portion to the guiding direction of the first core for optically connecting; a second reflection surface is formed as an incident side end portion of the second core for reflecting a light emitted from the light emitting portion to the guiding direction of the second core for optically connecting; and the light irradiated from the light emitting portion to the incident side end portion of the first core is guided to the guiding direction of the first core and the light irradiated from the light emitting portion to the incident side end portion o

Abstract: A multiple wavelength semiconductor laser is disclosed. The multiple wavelength semiconductor laser has a first edge emitting type resonator structure and a second edge emitting type resonator structure disposed on a common substrate through a separation region. The first edge emitting type resonator structure has an oscillation wavelength of 650 nm. The second edge emitting type resonator structure has an oscillation wavelength of 780 nm. A low reflection film that is a three-layer dielectric film composed of a first Al2O3 film of 60 nm, a TiO2 film of 55 nm, and a second Al2O3 film of 140 nm, where the refractive index of the TiO2 film is smaller than the refractive index of the first Al2O3 film and the refractive index of the second Al2O3 film.