Abstract: A semiconductor module includes a cooling device that includes: a ceiling plate; a side wall; a bottom plate; a plurality of pin fins having a polygonal shape and arranged in a matrix form in which one end of the respective pin fins is connected to a fin region having a rectangular shape; an inlet for a coolant at a first position adjacent to a part of one of long sides of the fin region, and an outlet for the coolant at a second position adjacent to a part of the other long side of the fin region. The matrix directions of the respective pin fins make an angle with a straight line connecting the first position and the second position, and a length of a segment of the straight line passing across the fin region is longer than a length of short sides of the fin region.

Abstract: A cooler includes a top plate, one surface of which serves as a heat dissipation surface, a bottom plate disposed so as to face the top plate and having a larger thickness than that of the top plate, a plurality of fins provided between the top plate and the bottom plate, and a circumferential wall part provided so as to surround the plurality of fins along outer circumferential edges of the bottom plate. The plurality of fins and the outer circumferential wall part are provided between the top plate and the bottom plate and bonded to the heat dissipation surface of the top plate. A flow path for a coolant is formed by a space enclosed by the top plate, the bottom plate, the plurality of fins, and the circumferential wall part. The top plate has an electric potential higher than that of the bottom plate.

Abstract: A light-emitting device according to one embodiment of the present disclosure includes: a reflective structure having a first surface and a second surface and having, on the first surface, an opening whose side surface is provided with a first reflective film; a semiconductor light-emitting element including a first conductivity-type layer, an active layer, and a second conductivity-type layer that are stacked, the opening of the reflective structure and the active layer being disposed to be opposed to each other; and a support member having a light-transmitting property and having a first surface and a second surface, the semiconductor light-emitting element being disposed on the first surface side, the reflective structure being disposed on the second surface side, the second surface being at least partially in contact with the first surface of the reflective structure.

Abstract: A pressure loss of a coolant is reduced. A cooler (3) includes a top plate (9), one surface of which serves as a heat dissipation surface, a plurality of fins (10) provided on the heat dissipation surface, a circumferential wall part (12) provided so as to surround outer circumferences of the plurality of fins along outer circumferential edges of the top plate, and a bottom plate (11) bonded to distal ends of the circumferential wall part and the plurality of fins. A flow path for a coolant is formed by a space enclosed by the top plate, the circumferential wall part and the bottom plate. The bottom plate has an inlet portion (23) and a discharge portion (24) for the coolant. The inlet portion and the discharge portion are disposed so as to face each other diagonally with the plurality fins interposed therebetween.

Abstract: A semiconductor device includes an insulating substrate, semiconductor elements mounted on the insulating substrate, and a cooler for cooling the semiconductor elements. The cooler includes a heat dissipating substrate having bonding and heat dissipating surfaces opposite to each other, the bonding surface being bonded to the second surface of the insulating substrate, a plurality of fins on the heat dissipating surface, a reinforcing plate having first and second surfaces opposite to each other and covering the fins, the first surface being bonded to tips of the fins, and a cooling case including a recessed part to house the fins and reinforcing plate. A first gap between two adjacent fins, measured in a direction parallel to the heat dissipating substrate, is larger than a second gap between the reinforcing plate and a bottom of the first recessed part, measured in a thickness direction.

Abstract: Provided is a distance measurement apparatus including a light projector that projects reference pulsed light to an object region, a light receiver that receives reflected pulsed light from the object region, and a scanning unit including a plurality of movable mirrors provided between the light projector and the object region and synchronously operated. The distance measurement apparatus further includes a calculation unit that calculates a distance to the object region on the basis of a difference between light projection timing of projecting the reference pulsed light and light receiving timing of receiving the reflected pulsed light.

Abstract: An information processing apparatus includes circuitry. The circuitry is configured to acquire read image data of an image formed on a recording medium. The circuitry is configured to acquire output target image data according to which the image is formed. The circuitry is configured to generate, based on the output target image data, inspection image data for inspection of the read image data. The circuitry is configured to compare the read image data corrected based on an amount of deviation caused by conveyance of the recording medium with the inspection image data generated, to detect an image abnormality. The circuitry is configured to highlight and output a position of a portion of the image abnormality in the read image data before correction, based on the amount of deviation caused by conveyance of the recording medium, in response to the image abnormality being detected.

Abstract: There are provided: a surface-treated aluminum material including an aluminum base material and an alkali alternating current electrolytic oxide coating film formed on at least a part of a surface of the aluminum base material, wherein the alkali alternating current electrolytic oxide coating film includes a porous-type aluminum oxide coating film layer formed on a surface side and a barrier-type aluminum oxide coating film layer formed on a base material side, and plural working grooves perpendicular to the direction of plastic working are formed; a method of producing the surface-treated aluminum material; a bonded body of the surface-treated aluminum material and a member to be bonded, including the surface-treated aluminum material and the member to be bonded, such as resin; and a method of producing the bonded body.

Abstract: A light-emitting device of the present disclosure includes: a solid-state light source emitting excitation light; a phosphor layer having a first refractive index, provided on a light-emitting surface side of the solid-state light source, and having a first reflection film on its side surface; a low refractive layer provided on the phosphor layer and having a second refractive index less than the first refractive index; and a sealing member encapsulating the phosphor layer and the low refractive layer and having a third refractive index greater than or equal to the second refractive index.

Abstract: Provided is a semiconductor module including semiconductor devices and a cooling apparatus, wherein the semiconductor device has semiconductor chips and a circuit board with the semiconductor chips implemented thereon; the cooling apparatus has a top plate, a side wall, a bottom plate, a coolant flow portion, an inlet, an outlet and a plurality of fins; the top plate and the bottom plate have three through holes that are through holes for inserting fastening members that fasten the semiconductor module to an external apparatus, penetrating the top plate and the bottom plate in one direction respectively; and a geometric center of gravity of a aperture of at least one of the inlet and the outlet may also be positioned inside a virtual triangle with the three through holes being vertexes in planar view.

Abstract: A correction device including a photon number counting unit that counts a photon number on the basis of an output signal output from a light receiving unit, a correction value acquiring unit that acquires a correction value corresponding to the photon number, and a correction unit that performs correction based on the correction value.

Abstract: A ranging device provided with a light projecting unit for projecting a reference pulse set row including a main pulse and at least one sub pulse, a light receiving unit for receiving a reflected pulse set row obtained by reflection of the reference pulse set row by an object to be measured, and an identifying unit for identifying the reflected pulse set row corresponding to the reference pulse set row. The ranging device is further provided with a calculating unit for calculating a distance to the object to be measured on the basis of a delay time difference between the reference pulse set row and the reflected pulse set row corresponding to the reference pulse set row. The light projecting unit projects a plurality of reference pulse set rows having different pulse intervals.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: A semiconductor laser drive circuit includes: an anode electrode divided into at least one gain region and at least one light absorption region; a cathode electrode shared between the gain region and the light absorption region; and a resistance connected to the anode electrode of the light absorption region.

Abstract: An information processing apparatus includes circuitry configured to: acquire, as a first image, a read image of an image formed on a medium; generate a second image based on document data; detect reference points from the second image; compare the first image with the second image to calculate an amount of positional deviation of the medium for each of the reference points; detect, based on the amount of positional deviation, a malfunction of a conveying device that conveys the medium; cause an image forming apparatus to print a correction chart for correction of conveyance of the medium, in response to detection of the malfunction of the conveying device; calculate, from a read image of the correction chart, an amount of fluctuation in conveyance of the medium performed by the conveying device; and calculate a correction value for the calculated amount of fluctuation in conveyance of the medium.

Abstract: A distance measurement apparatus includes at least one measurement unit. The measurement unit includes a first light reception section including a plurality of photon counting type light reception devices connected to each other and a first conversion section that converts a current outputted from the first light reception section into a voltage. The measurement unit further includes a first amplification section that outputs an amplification value obtained by amplifying the voltage outputted from the first conversion section and outputs, when the amplification value exceeds a given limit value, the limit value as the amplification value. The measurement unit further includes a first measurement section that measures a timing at which the output value from the first amplification section reaches a given threshold value.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.

Abstract: In a semiconductor laser according to an embodiment of the present disclosure, a ridge part has a structure in which a plurality of gain regions and a plurality of Q-switch regions are each disposed alternately with each of separation regions being interposed therebetween in an extending direction of the ridge part. The separation regions each have a separation groove that separates from each other, by a space, the gain region and the Q-switch region adjacent to each other. The separation groove has a bottom surface at a position, in a second semiconductor layer, higher than a part corresponding to a foot of each of both sides of the ridge part.

Abstract: A light-emitting element wafer including a supporting substrate, a luminescent layer that is formed of a semiconductor and has a first surface and a second surface, the first surface including a first electrode, the second surface including a second electrode, the second surface being arranged between the supporting substrate and the first surface, a junction layer that joins luminescent layer to the supporting substrate and is arranged between the supporting substrate and the second surface, a first inorganic film formed on the first surface, a second inorganic film formed between the junction layer and the second surface, an isolation trench portion that isolates elements and is formed to have a depth such that the isolation trench portion extends from the first inorganic film to the supporting substrate, and a third inorganic film that connects the first inorganic film and the second inorganic film.