Abstract: A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles (25), (26) with different frequencies. The RF power in the first subcycles (25) is higher in frequency than that in the second subcycles (26). A charge accumulated during the first subcycles (25) in which the RF power of high frequency is applied can be relieved during the second subcycles (26) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles (25).

Abstract: A method of etching a semiconductor device preventing tapering of a gate electrode edge includes a main etching of an electrode or wiring material supported by a dielectric film at a semiconductor substrate surface to expose the dielectric film. After the main etching step, residues of the electrode or the wiring material by sequentially etching utilizing a first gas mixture including a halogen-containing gas and an additive gas suppressing etching of the dielectric film by the halogen-containing gas, and in a second gas mixture gas including the halogen-containing gas and the additive gas and having the additive gas amount in a larger concentration than the first gas mixture.

Abstract: Disclosed is a manufacturing method of a semiconductor device which is intended to prevent occurrence of tapering of the shape of a gate electrode edge portion as has been deemed to be a problem at high-selectivity overetching process steps using a gas of HBr/O2 based gas.

Abstract: An oligonucleotide capable of binding to the intramolecular structure-free region of Verotoxin type 1 RNA or Verotoxin type 2 RNA at relatively low and constant temperature, and which can be used in a constant temperature nucleic acid amplification method, is provided. Also, a simple, speedy and highly sensitive method for detecting Verotoxin type 1 RNA or Verotoxin type 2 RNA is provided.

Abstract: A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles (25), (26) with different frequencies. The RF power in the first subcycles (25) is higher in frequency than that in the second subcycles (26). A charge accumulated during the first subcycles (25) in which the RF power of high frequency is applied can be relieved during the second subcycles (26) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles (25).

Abstract: A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles (25), (26) with different frequencies. The RF power in the first subcycles (25) is higher in frequency than that in the second subcycles (26). A charge accumulated during the first subcycles (25) in which the RF power of high frequency is applied can be relieved during the second subcycles (26) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles (25).

Abstract: A plasma reactor is provided for achieving extension of etching parameters to reduce charge-up shape anomaly and to improve selectivity, uniformity and workability in a dry etching process. An RF power fluctuates in cycles, each one of the cycles including first and second subcycles (25), (26) with different frequencies. The RF power in the first subcycles (25) is higher in frequency than that in the second subcycles (26). A charge accumulated during the first subcycles (25) in which the RF power of high frequency is applied can be relieved during the second subcycles (26) in which the RF power of low frequency is applied. At the same time, deterioration in an etching rate occurring with the application of only the RF power of low frequency can be relieved by applying the RF power of high frequency during the first subcycles (25).

Abstract: In a heating roller for fixing which is constituted such that a heating resistor 3 is provided onto an inner circumferential surface 1a of a cylinder 1 with an insulating layer 2 lying therebetween and a cleavage layer 6 is provided onto an outer circumferential surface, electrical insulating properties of the insulating layer 2 are maintained satisfactorily for a long time. A maximum height (Rmax) of surface roughness of the inner circumferential surface 1a of the cylinder 1 is in the range of 0.8 of 50 &mgr;m. A resistance value in the heating roller for fixing is partially adjusted easily. In a heating roller for fixing having a heating resistor 103 on a surface of a cylinder 101 with an insulating layer 102 lying therebetween, the heating resistor 103 is divided into a plurality of zones in an axial direction of the cylinder 101, and slots for adjusting resistance are formed in each zone.

Abstract: A gate electrode includes a polycrystalline silicon layer, a barrier layer and a metal layer. The metal layer and barrier layer includes for example W and RuO2 layers, respectively. In forming the gate electrode, the metal layer and barrier layer are etched using at least one of the barrier layer and polycrystalline silicon layer as an etching stopper.

Abstract: In a heating roller for fixing which is constituted such that a heating resistor 3 is provided onto an inner circumferential surface 1a of a cylinder 1 with an insulating layer 2 lying therebetween and a cleavage layer 6 is provided onto an outer circumferential surface, electrical insulating properties of the insulating layer 2 are maintained satisfactorily for a long time.A maximum height (Rmax) of surface roughness of the inner circumferential surface 1a of the cylinder 1 is in the range of 0.8 to 50 .mu.m.A resistance value in the heating roller for fixing is partially adjusted easily.In a heating roller for fixing having a heater resistor 103 on a surface of a cylinder 101 with an insulating layer 102 lying therebetween, the heating resistor 103 is divided into a plurality of zones in an axial direction of the cylinder 101, and slots for adjusting resistance are formed in each zone.

Abstract: A method of cleaning semiconductor devices which removes or transmutes the contaminants sticking on sidewalls of a pattern or a trench is formed is disclosed. A substrate to be treated on which a pattern or a trench is formed is located in a processing container. A reactive gas which reacts with the contaminants sticking on the sidewall of the pattern or the trench to produce reactive ions which remove or transmute the contaminants is introduced into the processing container. Plasma of the reactive gas is produced by electronic cyclotron resonance in order to produce reactive ions from the reactive gas introduced into the processing container. According to the method, the temperature of the reactive ions in the plasma becomes high, with the result that the motion of the reactive ions in the plasma becomes more active.

Abstract: A method of electron cyclotron resonance plasma etching including generating a constant plasma in a gas in a chamber containing a semiconductor wafer by supplying microwave energy to the chamber continuously and applying a pulsed direct current bias to the semiconductor wafer, wherein the pulsed bias has a period substantially equal to a time constant determined by the capacitance of the semiconductor wafer and the resistance of an ion sheath at the surface of the semiconductor wafer.

Abstract: An electromagnetic coil and the microwave generating source are provided so that the ECR discharge occurs to the reactive gas within the reaction chamber by generating a magnetic field in the reaction chamber and by introducing the microwave into it, for generating plasma. The sample table for placing the wafer is installed within the reaction chamber, on which wafer treatment like etching is effected by the plasma generated within the reaction chamber. The reaction chamber includes a first portion and a second portion which is insulated from the first portion by an insulating portion. The first portion and the second portion are structured so that the potential difference is applied by way of the power supply.

Abstract: An apparatus for cleaning a surface includes first and second reaction containers, a holding apparatus for holding, in the second reaction container, a substance to be processed on the surface of which foreign matter is present, an apparatus for supplying helium gas into the first reaction container, an apparatus for generating helium ions, electrons, and metastable helium by exciting helium gas in the first reaction container, and an apparatus for separating the metastable helium generated in the first reaction container and for introducing the metastable helium into the second reaction container.

Abstract: A method for anisotropically etching a substrate to be treated using plasma of a reactive gas produced by electron cyclotron resonance is disclosed. A substrate to be treated is located in a processing container, and a chlorine gas and a hydrogen chloride gas are introduced into the processing container. From the mixture of the chlorine and hydrogen chloride gases introduced into the processing container, plasma of the mixed gas is produced by electron cyclotron resonance. According to this method, the energy of the plasma of chlorine is taken by the plasma of H.sup.+, which results in a decrease in kinetic energy of the chlorine. As a result, the plasma of chlorine impinges vertically to the substrate to be treated along the sheath electric field. Consequently, etching with strong anisotropic property is enabled.

Abstract: A method of cleaning a surface including generating helium ions, electrons, and metastable helium by exciting helium gas, separating said metastable helium from the helium ions and electrons, and exposing a substance to be processed on the surface of which foreign matter is present to the metastable helium separated from the helium ions and electrons to remove the foreign matter from the substance.

Abstract: A plasma etching apparatus comprises a chamber, a holding table for holding samples, such as a semiconductor substrate to be etched, in the chamber, a plasma-generating device for generating a plasma within the chamber, and a magnetic-field-forming device which forms a magnetic field perpendicular to the surface of the sample placed on the holding table and parallel the inner wall of the chamber.