Abstract: A display device includes an organic EL element layer, a liquid crystal element layer disposed on top of the organic EL element layer, and a polarizing plate disposed at a side of the liquid crystal element layer that faces an observer. The liquid crystal element layer includes two transparent substrates and a liquid crystal layer disposed between the two transparent substrates. The liquid crystal element layer is configured to be able to, by applying a voltage to the liquid crystal layer, cause a substantially quarter-wavelength retardation in light passing through the liquid crystal layer.

Abstract: Provided with a weight release device capable of being operated in deep sea same as the conventional weight release device without accompanying a mechanical operation at all to avoid troubles of mechanical operation occurred in the conventional weight release device. The weight release device includes a housing fixed to the underwater observation device; a thread made of thermoplastic resin; electric heater portions; a weight support plate; a locking member of the thread made of the thermoplastic resin; and a ring for hanging the weight. The thread made of the thermoplastic resin is arranged from a start point housed in the housing, arranged to pass through the first electric heater portion, locked to the locking member of the thread made of the thermoplastic resin, arranged to pass through the second electric heater portion housed in the housing, and returned to an end point housed in the housing. The ring for hanging the weight is fixed to a lower surface of the weight support plate.

Abstract: A liquid ejecting head includes: head chips including a first-head-chip and a second-head-chip; a holder holding the head chips; and a heater along a direction parallel to a nozzle surface. The first-head-chip and the second-head-chip are disposed to be offset from each other in both a first-direction and a second-direction parallel to the nozzle surface and intersecting with each other. When a first-side is one of the four sides of a virtual rectangle circumscribing the aggregate of the head chips and a second-side and a third-side are coupled to both ends of the first-side, the first-head-chip is in contact with the first-side and the third-side and the second-head chip is in contact with the second-side. The heater overlaps the head chips. A first-region surrounded by the first-side, the second-side, the first-head-chip, and the second-head-chip includes a first-outside-part positioned outside the outer edge of the heater.

Abstract: A liquid ejecting head supported by a support body includes: a first head chip; a holder having a holding portion holding the first head chip and a flange portion; and a heater heating the holding portion, in which the holding portion has a heat receiving portion receiving heat from the heater, and a shortest path of heat transferred through the holder from the heat receiving portion to the flange portion is bent or curved at two or more points.

Abstract: A chemical fluid for underground injection includes an inorganic substance, an antioxidant (e.g. ascorbic acid, gluconic acid, or a salt thereof, or ?-acetyl-?-butyrolactone, or bisulfite, or disulfite), and water. The inorganic substance may be a colloidal particle or a powder. The inorganic substance may be present in the chemical fluid in amounts of 0.001% by mass to 50% by mass based on the total mass of the chemical fluid for underground injection. The antioxidant may be present in the chemical fluid at a ratio of 0.0001 to 2 of the mass of the antioxidant to the mass of the inorganic substance. A surface of the inorganic substance may be coated with a silane compound. The chemical fluid may further include an anionic surfactant, a cationic surfactant, an amphoteric surfactant, a nonionic surfactant, or a mixture thereof.

Abstract: A power conversion device according to the present disclosure has one end connected to a DC voltage source and another end connected to a load, and includes: an inverter circuit which converts DC voltage from the DC voltage source to AC voltage to be outputted to the load, and includes a leg in which an upper arm and a lower arm each having a switching element, and a resistor, are connected in series, and a smoothing capacitor connected in parallel to the leg; a current detection circuit which detects voltage across the resistor, to detect current of the resistor; and a control circuit which controls the inverter circuit. The control circuit corrects the current value detected by the current detection circuit, using an operation condition of the inverter circuit, and controls the inverter circuit using the corrected current value. Thus, error occurring in the current detection circuit can be corrected.

Abstract: Provided is a distribution circuit which has good pass characteristic and isolation characteristic over a wide band. A distribution circuit, in which Wilkinson-type distribution circuits configured with a coil, a capacitor, and a resistor are cascaded in two stages between an input terminal and at least three terminals, and a capacitor is connected in parallel with the resistor inserted between the output terminals in the latter-stage Wilkinson-type distribution circuits.

Abstract: A substrate processing apparatus is disclosed. Exemplary substrate processing apparatus includes a plurality of reaction chambers; a plurality of susceptors disposed within the reaction chambers and configured to support a substrate; a substrate transfer robot disposed within the substrate processing apparatus, comprising: a rotation arm comprising a plurality of arms, the arms configured to transfer the substrate between the reaction chambers; and a rotation shaft connected to the plurality of arms; a motor configured to rotate the rotation shaft; a motor controller configured to drive the motor; and a first sensor with a portion disposed on at least one of the plurality of arms.

Abstract: A battery pack comprises a battery and a flexible printed circuit board (FPC) utilized to detect a voltage and a temperature of the battery. The FPC comprises a substrate having a front surface and a back surface, a thermistor which detects a temperature of the battery, temperature detection lines and voltage detection lines. The temperature detection lines are electrically connected to a thermistor and arranged between the back surface and the battery. The voltage detection lines are arranged on the front surface so as to overlap the temperature detection lines in a case that the FPC is observed in a plane view in a transmissive manner from a back surface to a front surface.

Abstract: A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A shower head for plasma processing includes a body part having a first surface, a second surface opposite to the first surface, and a plurality of inner side surfaces. The plurality of inner side surfaces is configured to define a plurality of gas holes penetrating through the body part from the first surface to the second surface. The second surface is made of a first corrosion-resistant material.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: A substrate processing method includes preparing a substrate including an etching target film and a mask; etching the etching target film through the mask by plasma; and heat-treating the substrate at a preset temperature after the etching of the etching target film.

Abstract: A plasma processing method includes: plasma-processing a substrate placed on a surface of a placement table while causing a coolant of 0° C. or lower to flow through a coolant flow path formed inside the table; placing a dummy substrate on the surface of the placement table in place of the substrate; and removing a reaction product generated due to the plasma processing of the substrate by the plasma of the processing gas from a peripheral edge portion of the surface of the placement table while heating the surface of placement table by the plasma of the processing gas via the dummy substrate in a state where the dummy substrate is placed on the surface of the placement table.

Abstract: Provided is a member for a plasma processing apparatus consisting of a tungsten carbide phase. The member includes at least one type of atom selected from the group consisting of a Fe atom, a Co atom, and a Ni atom, in which the total content of the atoms is in a range of 30 to 3300 atomic ppm.

Abstract: A member for a plasma processing apparatus has a tungsten carbide phase, and a sub-phase including at least one selected from the group consisting of phase I to IV, and phase V, in which the phase I is a carbide phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase II is a nitride phase containing, as a constituent element, at least one of the elements of Group IV, V, and VI of the periodic table excluding W, the phase III is a carbonitride phase containing, as a constituent element, at least one of the elements of Group IV, Group V, and Group VI of the periodic table excluding W, the phase IV is a carbon phase, the phase V is a composite carbide phase which is represented by a formula WxMyCz.

Abstract: A plasma processing method capable of reducing an amount of deposit adhering to an upper electrode or removing the deposit from the upper electrode is provided. In the plasma processing method, the upper electrode of a capacitively coupled plasma processing apparatus is cooled. A supporting table including a lower electrode is provided within a chamber of the plasma processing apparatus. The upper electrode is provided above the supporting table. During the cooling of the upper electrode, a film of a substrate is etched by plasma generated within the chamber. The substrate is placed on the supporting table during the etching of the film. A negative bias voltage is applied to the upper electrode while the etching is being performed.

Abstract: A plasma processing method capable of reducing an amount of deposit adhering to an upper electrode or removing the deposit from the upper electrode is provided. In the plasma processing method, the upper electrode of a capacitively coupled plasma processing apparatus is cooled. A supporting table including a lower electrode is provided within a chamber of the plasma processing apparatus. The upper electrode is provided above the supporting table. During the cooling of the upper electrode, a film of a substrate is etched by plasma generated within the chamber. The substrate is placed on the supporting table during the etching of the film. A negative bias voltage is applied to the upper electrode while the etching is being performed.