Abstract: A reflecting device that enables to prevent infiltration of particles into a processing chamber. The reflecting device is disposed in a communicating pipe. The communicating pipe allows the processing chamber of a substrate processing apparatus and an exhaust pump to communicate with each other. The exhaust pump has at least one rotary blade. The reflecting device comprises at least one reflecting surface. The at least one reflecting surface is oriented to the exhausting pump.

Abstract: In order to improve sealing properties between a downcomer and a high-speed layer and in order to efficiently take out produced gas obtained through gasification of, for example, a solid reactant, a syphon for sealing between a downcomer and a high-speed layer through temporary storage of particles moving from the downcomer to the high-speed layer comprises a reactor portion for causing the solid reactant to conduct chemical reaction through action of the particles, a downcomer seal portion in communication, at upper and lower ends thereof, with the downcomer and a lower portion the reactor portion, respectively, a particle outlet seal portion provided in a spaced apart relationship from the downcomer seal portion and in communication, at upper and lower ends thereof, with the high-speed layer and the lower portion of the reactor portion, respectively, and a freeboard portion formed above the reactor portion.

Abstract: An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.

Abstract: In a particle attachment preventing method in a substrate processing apparatus, an electron density control power supplied from the second power supply is adjusted such that an electron density above the substrate gets lower than during a plasma processing, for a preset short period of time after the plasma processing is ended, and a bias power supplied from the first power is maintained for the preset short period of time. The second power supply is a high frequency power supply for supplying a high frequency power having a frequency that is higher than that of the bias power, and in said adjusting of the electron density control power, the high frequency power supplied from the second power supply is lowered as compared with that during the plasma processing.

Abstract: A constituent part is included in a plasma processing apparatus for performing a plasma process on a substrate mounted on a susceptor by using a plasma generated in a processing chamber. The constituent part has at least one recessed corner formed by intersection of two surfaces. The recessed corner is exposed to the plasma when the plasma is generated in the processing chamber. An intersection angle of the two surfaces seen from a plasma side is 115 degrees to 180 degrees.

Abstract: A fuel gasification system including a gasification furnace including a fluidized bed formed by fluidizing reactant gas for gasifying fuel charged into gasification gas and flammable solid content, a combustion furnace for combustion of the flammable solid content into which the flammable solid content produced in the furnace is introduced together with bed material and that includes a fluidized bed formed by fluidizing reactant gas, a material separator such as hot cyclone that separates bed material from exhaust gas introduced from the combustion furnace, the separated bed material being fed through a downcorner to the gasification furnace, and a tar decomposing mechanism that heats the gasification gas produced in the furnace to decompose tar contained in the gasification gas.

Abstract: An object of the invention is to enhance gasification efficiency of flammable solid content when high fuel ratio fuel having fixed carbon content in large quantity is to be gasified. A material downcomer 11 for introduction of bed material 10 separated in a material separator 9 and a fuel supply port 21 for introduction of gasification fuel 12 are arranged at one side of a gasification furnace 2; a solid content supply port 19 for supply of flammable solid content 18 and the bed material 10 in the gasification furnace 2 to the combustion furnace 1 is arranged at the other side of the gasification furnace 2. In the gasification furnace 2 and between the one and the other sides of the furnace 2, vertical partition plates 22 are arranged to provide a zigzag curved flow passage 23 with upper and lower turns.

Abstract: Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIb of the Periodic Table coated directed or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.

Abstract: At the time of plasma igniting or during plasma processing, only optimizing the distance between electrodes in each case caused a limitation to the prevention of charging damage. To resolve this, a novel plasma processing method employs a plasma processing apparatus which includes an upper electrode to which first high-frequency power is applied, a lower electrode to which second high-frequency power is applied, and a lift mechanism for controlling the spacing between the upper and lower electrodes. The first high-frequency power is applied to the upper electrode to cause plasma igniting. The method is adapted to make the spacing between the upper and lower electrodes larger at least at the time of plasma extinction than during plasma processing of a wafer on the lower electrode.

Abstract: In order to improve sealing properties between a downcomer 10 and a high-speed layer 20 and in order to efficiently take out produced gas obtained through gasification of, for example, a solid reactant, a syphon 30 for sealing between a downcomer 10 and a high-speed layer 20 through temporary storage of particles moving from the downcomer 10 to the high-speed layer 20 comprises a reactor portion 70 for causing the solid reactant to conduct chemical reaction through action of the particles, a downcomer seal portion 40 in communication, at upper and lower ends thereof, with the downcomer 10 and a lower portion the reactor portion 70, respectively, a particle outlet seal portion 50 provided in a spaced apart relationship from the downcomer seal portion 40 and in communication, at upper and lower ends thereof, with the high-speed layer 20 and the lower portion of the reactor portion 70, respectively, and a freeboard portion 76 formed above the reactor portion 70.

Abstract: In order to quantitatively evaluate actual circulation quantity of bed material extremely simply and to enhance accuracy of comparison of results of thermal balance examined through simulation or the like with actual operation results, time is measured which is required for bed material in a downcomer 5 to reach an upper predetermined height H1 from a lower reference height H0 during stopped feeding of fluidizing air to an external heat exchanger 7; a flow rate of the bed material as circulation quantity is determined from the time and an accumulated amount of the bed material based on an inner diameter D of the downcomer 5.

Abstract: An exhausting system and an exhausting pump connected to a processing chamber of a substrate processing apparatus are provided. The exhausting pump is provided with at least one rotary blade and a cylindrical intake part disposed at the processing chamber side from the rotary blade. The exhausting pump includes a reflecting device disposed inside the intake part and having at least one reflecting surface oriented to the rotary blade.

Abstract: A function of absorbing CO2 in gas by chemical to accelerate gasifying reaction is made compatible with a catalytic function of reforming tar in gasified gas generated by the gasifying reaction to thereby make it possible to produce clean product gas with high gasification efficiency. Gasification process is divided into three processes: a gasification furnace 10 for carrying out gasification process by pyrolysis and gasification (pyrolysis gasification phase, first process), a combustion furnace 20 for burning char to obtain calcined active chemical (char combustion phase, second process) and a gas purification furnace 30 for purifying gasified gas (gasified gas purification phase, third process).

Abstract: In a fluid damper that autonomously changes a damping force in accordance with movement of a piston, the fluid damper having: a fluid 8 having magnetic properties; a piston 2 formed of a magnetic material; a cylinder 3 that encapsulates the fluid 8 having magnetic properties and accommodates the piston 2; a piston rod 4 that pierces the cylinder 3 to support the piston 2; a magnetic field generation device 6 provided outside the cylinder 3; a first yoke 5 arranged around the cylinder 3; and a second yoke 7 arranged around the piston rod 4 outside the cylinder 3, a magnetic circuit is partially formed.

Abstract: A gas supply member is disposed in a chamber of a plasma processing apparatus and has a planar surface facing an inner space of the chamber and a plurality of gas holes bored in the planar surface to supply a gas through the gas holes to the inner space. An outer periphery portion of each gas hole at the planar surface has a slant surface formed to correspond to a flow of the gas injected through each gas hole. Further, the slant surface includes at least any one of a flat surface and a curved surface. An angle formed between the slant surface and the planar surface is equal to or greater than that formed between the planar surface and a distribution of the gas injected through each gas hole.

Abstract: In order to quantitatively evaluate actual circulation quantity of bed material extremely simply and to enhance accuracy of comparison of results of thermal balance examined through simulation or the like with actual operation results, time is measured which is required for bed material in a downcomer 5 to reach an upper predetermined height H1 from a lower reference height H0 during stopped feeding of fluidizing air to an external heat exchanger 7; a flow rate of the bed material as circulation quantity is determined from the time and an accumulated amount of the bed material based on an inner diameter D of the downcomer 5.

Abstract: A light guide member and a sensor that constitute a front light mechanism are bonded with a bonded sheet. A double-sided adhesive tape is provided on each surface of the bonded sheet. A repairing material is printed on a surface of the sensor so as to fill concave portions provided between the adjacent X-electrodes. This substantially increases the contact area with the double-sided adhesive tape, and increases the bonding strength between the light guide member and the sensor.

Abstract: A shield casing of an image display apparatus including a casing which covers other than a front surface of an image display device having an electromagnetic wave emitter and shielding the electromagnetic waves, a protection panel on which a conductive film is laminated, and a mounting device which is in contact with the conductive film and attaches the protection panel to the casing, wherein the mounting device has an arm stretching toward a front side of the protection panel, a tip portion of the arm curves toward the protection panel and has a contact surface with the protection panel on an outer side surface of the tip portion, and the mounting device mounts the protection panel to the casing with the force more than supporting the protection panel.

Abstract: Improving the resistance of members and parts disposed inside of vessels such as semiconductor processing devices for conducting plasma etching treatment in a strong corrosive environment. A ceramic coating member for a semiconductor processing apparatus comprises a porous layer made of an oxide of an element in Group IIIa of the Periodic Table coated directly or through an undercoat on the surface of the substrate of a metal or non-metal and a secondary recrystallized layer of the oxide formed on the porous layer through an irradiation treatment of a high energy such as electron beam and laser beam.

Abstract: A ring-shaped component for use in a plasma processing includes an inner ring-shaped member provided to surround an outer periphery of a substrate to be subjected to the plasma processing and an outer ring-shaped member provided to surround an outer periphery of the inner ring-shaped member. The outer ring-shaped member has a first surface facing a processing space side and a second surface facing an opposite side of the plasma generation side. The second surface has thereon one or more ring-shaped grooves.