Abstract: A vehicular shock absorber to be mounted on a vehicular exterior side with respect to a vehicular interior component includes a low rigidity portion, a high rigidity portion having higher rigidity than the low rigidity portion, and a first connection portion. The low rigidity portion includes a first plate portion that has a first vehicular interior side surface, and a first mount portion that extends from the first vehicular interior side surface and is to be fixed to the vehicular interior component. The high rigidity portion includes a second plate portion that has a second vehicular interior side surface, and a second mount portion that extends from the second vehicular interior side surface and is to be fixed to the vehicular interior component. The first connection portion extends between and connects the first plate portion of the low rigidity portion and the second plate portion of the high rigidity portion.

Abstract: According to an aspect, a detection device includes: a substrate; a photodiode in which a lower electrode, a semiconductor layer, and an upper electrode are stacked on the substrate in the order as listed; a transistor provided in the photodiode; an insulating layer provided between layers of the substrate and the photodiode; and a planarizing layer covering the insulating layer. The insulating layer comprises a projecting portion that projects toward the photodiode in a direction orthogonal to the substrate. The planarizing layer has a contact hole provided in a position that is below the photodiode and overlaps the projecting portion of the insulating layer. The photodiode is provided on an upper side of the planarizing layer and is also provided so as to cover the contact hole. The lower electrode of the photodiode is electrically coupled to the transistor at a bottom of the contact hole.

Abstract: A signal transmission cable is provided with a conductor, an insulator covering around the conductor, a shield layer covering around the insulator, a sheath covering around the shield layer, and a plating base layer is provided between the insulator and the shield layer to cover around the insulator. The shield layer has a plating layer provided to cover the plating base layer to be in contact with an outer peripheral surface of the plating base layer. A surface roughness of an outer peripheral surface of the plating layer is less than a surface roughness of an inner peripheral surface of the plating layer.

Abstract: A leaky cable is provided with a linear insulator and a metal layer formed on an outer peripheral surface of the insulator. A slot for leaking electromagnetic waves is formed through the metal layer between an inner peripheral surface and an outer peripheral surface of the metal layer, and the outer peripheral surface of the insulator is formed with unevenness that inhibits misalignment of the slot with respect to the insulator. The method of manufacturing the leaky cable includes forming an insulator composed of thermoplastic resin in a cylindrical shape, roughening an outer peripheral surface of the insulator, forming a metal layer on the outer peripheral surface of the insulator, and forming a slot through the metal layer between an inner peripheral surface and an outer peripheral surface of the metal layer. The slot is configured to leak electromagnetic waves to outside of the metal layer.

Abstract: Provided is a shopping cart capable of simplifying equipment of a storage area of the shopping cart. A shopping cart allowed to be nested in a front-rear direction, including: a cart body; a battery configured to supply power to an electronic device attached to the cart body and displayed commodity information read by a reading device; a power receiving portion provided on a front side of the cart body and configured to be electrically connectable to an external power supply; and a power transmitting portion provided on a rear surface side of the power receiving portion and configured to supply power to a power receiving portion of another shopping cart nested in the shopping cart. Each of the power receiving portion and the power transmitting portion is provided with a magnet configured for holding a relative position.

Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer.

Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

Abstract: A high frequency signal transmission cable includes a conductor, an insulator provided over a periphery of the conductor, a plating layer provided over a periphery of the insulator, and a sheath provided over a periphery of the plating layer. A crack suppressing layer includes a non-cross-linked polyethylene is provided between the insulator and the plating layer, in such a manner as to remain in contact with the insulator while being provided with the plating layer over an entire periphery of a roughened outer surface of the crack suppressing layer. The crack suppressing layer is unadhered to the insulator. The plating layer is adhered to the crack suppressing layer. The crack suppressing layer suppresses an occurrence of a cracking in the plating layer by bending together with the plating layer while being integral and moving with the plating layer in a longitudinal direction of the cable.

Abstract: The dielectric waveguide 1 transmits an electromagnetic wave with a frequency of 20 GHz or more and 200 GHz or less and includes a core 2 including a plurality of dielectric waveguide lines 21 that are bundled together and are composed of a dielectric made of a resin or quartz.

Abstract: A semiconductor laser element of the present disclosure reducing one-dimensional local oscillation includes a substrate, an active layer, and a phase modulation layer. The phase modulation layer includes a base layer and modified refractive index regions two-dimensionally placed on a reference surface. In a virtual square lattice on the reference surface, the gravity center of each modified refractive index region is placed away from the corresponding lattice point, and an angle of a vector connecting the corresponding lattice point to the gravity center is set individually. A lattice spacing and a light emission wavelength of the active layer satisfy a ?-point oscillation condition. The gravity center of each modified refractive index region is placed such that the absolute value of the Fourier coefficient of an annular or a circular shape obtained by rotating each modified refractive index region with the corresponding lattice point is 0.01 or less.

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Abstract: A three-dimensional measurement device includes a plurality of light source units configured to irradiate the object to be measured with measurement light having predetermined patterns, an image capture unit configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured based on results of image capture performed by the image capture unit. The predetermined patterns of the measurement light include stripe patterns, respectively. The stripe patterns radiated from the plurality of light source units have respective patterns different from each other. The plurality of light source units are arrayed in a direction parallel to stripes in the stripe patterns. The measurement unit measures the three-dimensional shape of the object to be measured based on a three-dimensional shape measurement method using the stripe pattern.

Abstract: The present embodiment relates to a light-emitting device that enables reduction in attenuation or diffraction effect caused by a semiconductor light-emitting device with respect to modulated light outputted from a spatial light modulator, and the light-emitting device includes the semiconductor light-emitting device that outputs light from a light output surface and the reflection type spatial light modulator that modulates the light. The spatial light modulator includes a light input/output surface having the area larger than the area of a light input surface of the semiconductor light-emitting device, modulates light taken through a region facing the light output surface of the semiconductor light-emitting device in the light input/output surface, and outputs the modulated light from another region of the light input/output surface to a space other than the light input surface of the semiconductor light-emitting device.

Abstract: A signal transmission cable includes a signal line, an insulation layer covering the signal line, and a shield layer covering the insulation layer. A first oxygen amount A1 on an outer peripheral surface of the insulation layer is 1.2 times or greater than a second oxygen amount A2 inside the insulation layer, or a contact angle on the outer peripheral surface the insulation layer is 130° or less, or an adhesion-wetting surface energy on the outer peripheral surface the insulation layer is 27 mJ/m2 or greater, or a first amount of a hydroxy group on the outer peripheral surface of the insulation layer is greater than a second amount of a hydroxy group inside the insulation layer.

Abstract: The present embodiment relates to a single semiconductor light-emitting element including a plurality of light-emitting portions each of which is capable of generating light of a desired beam projection pattern and a method for manufacturing the semiconductor light-emitting element. In the semiconductor light-emitting element, an active layer and a phase modulation layer are formed on a common substrate layer, and the phase modulation layer includes at least a plurality of phase modulation regions arranged along the common substrate layer. The plurality of phase modulation regions are obtained by separating the phase modulation layer into a plurality of places after manufacturing the phase modulation layer, and as a result, the semiconductor light-emitting element provided with a plurality of light-emitting portions that have been accurately aligned can be obtained through a simple manufacturing process as compared with the related art.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.

Abstract: The embodiment relates to a light-emitting device in which a positional relationship between a modified refractive index region's gravity-center position and the associated lattice point differs from a conventional device, and a production method. In this device, a stacked body including a light-emitting portion and a phase modulation layer optically coupled to the light-emitting portion is on a substrate. The phase modulation layer includes a base layer and plural modified refractive index regions in the base layer. Each modified refractive index region's gravity-center position locates on a virtual straight line passing through a corresponding reference lattice point among lattice points of a virtual square lattice on the base layer's design plane. A distance between the reference lattice point and the modified refractive index region's gravity center along the virtual straight line is individually set such that this device outputs light forming an optical image.

Abstract: A cable status management system for managing a wire-break progress of a cable used in a managed device is provided with a cable status management device having a cable status storage unit that stores a wire-break progress data indicating the wire-break progress in the cable, a device user-side data management device that belongs to a device user that uses the managed device, a device manufacturer terminal that belongs to a device manufacturer that manufactures the managed device, and a cable manufacturer terminal that belongs to a cable manufacturer that manufactures the cable. At least the device manufacturer terminal and the cable manufacturer terminal are configured to be accessible with the wire-break progress data stored in the cable status storage unit via a network.

Abstract: A signal transmission cable is provided with a conductor, an insulator covering around the conductor, a shield layer covering around the insulator, a sheath covering around the shield layer, and a plating base layer is provided between the insulator and the shield layer to cover around the insulator. The shield layer has a plating layer provided to cover the plating base layer to be in contact with an outer peripheral surface of the plating base layer. A surface roughness of an outer peripheral surface of the plating layer is less than a surface roughness of an inner peripheral surface of the plating layer.

Abstract: A semiconductor light-emitting module according to the present embodiment includes a plurality of semiconductor light-emitting elements each outputting light of a desired beam projection pattern; and a support substrate holding the plurality of semiconductor light-emitting elements. Each of the plurality of semiconductor light-emitting elements includes a phase modulation layer configured to form a target beam projection pattern in a target beam projection region. The plurality of semiconductor light-emitting elements include first and second semiconductor light-emitting elements that are different in terms of at least any of a beam projection direction, the target beam projection pattern, and a light emission wavelength.