Abstract: The present embodiment relates to a semiconductor light-emitting element or the like including a structure for suppressing deterioration in the quality of an optical image caused by an electrode blocking a part of light outputted from a phase modulation layer. The semiconductor light-emitting element includes a phase modulation layer having a basic layer and a plurality of modified refractive index regions, and the phase modulation layer includes a first region at least partially overlapping the electrode along a lamination direction and a second region other than the first region. Among the plurality of modified refractive index regions, only one or more modified refractive index regions in the second region are disposed so as to contribute to formation of an optical image.

Abstract: A semiconductor light emitting element that can form a useful beam pattern is provided. A semiconductor laser element LD includes an active layer 4, a pair of cladding layers 2 and 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4. The phase modulation layer 6 includes a base layer 6A and different refractive index regions 6B that are different in refractive index from the base layer 6A. The different refractive index regions 6B desirably arranged in the phase modulation layer 6 enable emission of laser light including a dark line with no zero-order light.

Abstract: A clip may include an attachment base, and an anchor including a pillar formed on the attachment base and a pair of engagement legs formed on the pillar. When the anchor is inserted into an attaching hole formed on an object member, the anchor is held in the attaching hole, so that the clip is attached to the panel. The clip further includes a rotation preventive mechanism that is configured to prevent the pillar from rotating relative to the attaching hole in a condition in which the anchor is held in the attaching hole. The rotation preventive mechanism includes a pair of projections formed on one end portion of the pillar, and at least one projection formed on another end portion of the pillar. The pair of projections formed on one end portion of the pillar respectively have through bores formed thereon.

Abstract: The present embodiment relates to a light-emitting device or the like having a structure capable of reducing one power of ±1st-order light with respect to the other power. The light-emitting device includes a substrate, a light-emitting portion, and a phase modulation layer including a base layer and a plurality of modified refractive index regions. Each of the plurality of modified refractive index regions has a three-dimensional shape defined by a first surface facing the substrate, a second surface positioned on a side opposite to the substrate with respect to the first surface, and a side surface. In the three-dimensional shape, at least one of the first surface, the second surface, and the side surface has a portion inclined with respect to a main surface.

Abstract: A multi-core cable includes a heat detection line including a twisted pair wire composed of a pair of heat detecting wires being twisted together, each of which includes a first conductor and a first insulator covering a periphery of the first conductor, a plurality of electric wires spirally twisted around the heat detection line, each of which includes a second conductor and a second insulator covering a periphery of the second conductor, and a sheath covering the heat detection line and the plurality of electric wires together. A melting point of the first insulator is lower than a melting point of the second insulator. The second conductor has a shape in a cross-section perpendicular to a cable longitudinal direction in which a width along a circumferential direction is gradually increased from a radially inward portion to a radially outward portion.

Abstract: One aspect relates to a light-emitting element having a layer forming a resonance mode. The light-emitting element includes a structure body constituted by a substrate and a semiconductor laminate body including a first cladding layer, a second cladding layer, an active layer, and a resonance-mode forming layer including a basic layer and modified refractive index regions. A laser light output region and a metal electrode film are on opposing surfaces of the structure body. The metal electrode film includes a first layer forming ohmic contact with the structure body, a second layer reflecting light from the resonance-mode forming layer, a third layer, and a fourth layer for solder bonding. The third layer has a different composition from the second layer and the fourth layer, and has a lower diffusion degree than the second layer and the fourth layer to that of a solder material.

Abstract: A linear shape member is composed of a linear shape electrical insulating body made of a fluoropolymer resin and including a plurality of crack shape grooves on a surface thereof, and a plating layer coating the surface of the electrical insulating body. The surface of the electrical insulating body meets at least either one of two conditions: that the surface of the electrical insulating body is not lower than 40 nm in arithmetic mean roughness Ra; and that the surface of the electrical insulating body is not lower than 80 nm in root mean square roughness Rms.

Abstract: A three-dimensional measurement device includes one or a plurality of light source units configured to irradiate the object to be measured SA with measurement light having a predetermined pattern, one or a plurality of image capture units configured to capture an image of the object to be measured which is irradiated with the measurement light, and a measurement unit configured to measure a three-dimensional shape of the object to be measured on the basis of results of image capture performed by the image capture units. The light source units are constituted by an S-iPMSEL of M-point oscillation.

Abstract: A light emission device of one embodiment reduces zero-order light included in output of an S-iPM laser. The light emission device includes a light emission unit and a phase modulation layer. The phase modulation layer has a base layer and modified refractive index regions each including modified refractive index elements. In each unit constituent region centered on a lattice point of an imaginary square lattice set on the phase modulation layer, the distance from the corresponding lattice point to each of the centers of gravity of the modified refractive index elements is greater than 0.30 times and is not greater than 0.50 times of the lattice spacing. In addition, the distance from the corresponding lattice point to the center of gravity of the modified refractive index elements as a whole is greater than 0 and is not greater than 0.30 times of the lattice spacing.

Abstract: In a semiconductor light emitting element provided with an active layer 4, a pair of cladding layers 2, 7 between which the active layer 4 is interposed, and a phase modulation layer 6 optically coupled to the active layer 4, the phase modulation layer 6 includes a base layer 6A and a plurality of different refractive index regions 6B having different refractive indices from the base layer 6A. When an XYZ orthogonal coordinate system having a thickness direction of the phase modulation layer 6 as a Z-axis direction is set and a square lattice of a virtual lattice constant a is set in an XY plane, each of the different refractive index regions 6B is disposed so that a centroid position G thereof is shifted from a lattice point position in a virtual square lattice by a distance r, and the distance r is 0<r?0.3a.

Abstract: The present embodiment relates to a light emission device capable of removing zero-order light from output light of an S-iPM laser. The light emission device comprises an active layer and a phase modulation layer. The phase modulation layer includes a base layer and a plurality of modified refractive index regions. In a state in which a virtual square lattice is set on the phase modulation layer, a center of gravity of each modified refractive index region is separated from a corresponding lattice point, and a rotation angle around each lattice point that decides a position of the center of gravity of each modified refractive index region is set according to a phase distribution for forming an optical image. A lattice spacing and an emission wavelength satisfy a condition of M-point oscillation in a reciprocal lattice space of the phase modulation layer.

Abstract: A clip may include an attachment base, and an anchor including a pillar formed on the attachment base and a pair of engagement legs formed on the pillar. When the anchor is inserted into an attaching hole formed on an object member, the anchor is held in the attaching hole, so that the clip is attached to the panel. The clip further comprises a rotation preventive mechanism that is configured to prevent the pillar from rotating relative to the attaching hole in a condition in which the anchor is held in the attaching hole. The rotation preventive mechanism includes a pair of projections formed on one end portion of the pillar, and at least one projection formed on another end portion of the pillar. The pair of projections formed on one end portion of the pillar respectively have through bores formed thereon.

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

Abstract: The present embodiment relates to a light emitting device having a structure capable of removing zero order light from output light of an S-iPM laser. The light emitting device includes a semiconductor light emitting element and a light shielding member. The semiconductor light emitting element includes an active layer, a pair of cladding layers, and a phase modulation layer. The phase modulation layer has a basic layer and a plurality of modified refractive index regions, each of which is individually disposed at a specific position. The light shielding member has a function of passing through a specific optical image output along an inclined direction and shielding zero order light output along a normal direction of a light emitting surface.

Abstract: A cable is composed of a linear shape conductor, a first electrical insulating member coating a periphery of the conductor, a shield made of a plating layer coating a surface of the first electrical insulating member, a second electrical insulating member coating a surface of the shield, and an exposed shield portion provided in at least one end portion of the cable with the second electrical insulating member being removed therefrom and the shield being exposed therein during termination. An adhesion strength between the shield and the second electrical insulating member in the exposed shield portion is lower than an adhesion strength between the shield and the second electrical insulating member in an other part of the surface of the shield.

Abstract: A signal transmission cable includes a signal line, an insulation layer configured to cover the signal line, and a plating layer configured to cover the insulation layer. An arithmetic average roughness Ra of an outer peripheral surface of the insulation layer is between 0.6 ?m and 10 ?m inclusive. A method of manufacturing the signal transmission cable includes covering the signal line with the insulation layer, followed by conducting a dry-ice-blasting on the outer peripheral surface of the insulation layer, followed by conducting a corona discharge exposure process on the outer peripheral surface, and forming the plating layer on the outer peripheral surface.

Abstract: A high frequency signal transmission cable includes a conductor, an insulator provided over a periphery of the conductor, a plating layer provided over a periphery of the insulator, and a sheath provided over a periphery of the plating layer. A crack suppressing layer includes a non-cross-linked polyethylene is provided between the insulator and the plating layer, in such a manner as to remain in contact with the insulator while being provided with the plating layer over an entire periphery of a roughened outer surface of the crack suppressing layer. The crack suppressing layer is unadhered to the insulator. The plating layer is adhered to the crack suppressing layer. The crack suppressing layer suppresses an occurrence of a cracking in the plating layer by bending together with the plating layer while being integral and moving with the plating layer in a longitudinal direction of the cable.

Abstract: A linear shape member is composed of a linear shape electrical insulating body comprising irregularities on a surface, and a plating layer coating the surface of the electrical insulating body. An average irregularities spacing Sm of the irregularities is not more than 20.0 ?m.

Abstract: A high frequency signal transmission cable includes a conductor, an insulator provided over a periphery of the conductor, a plating layer provided over a periphery of the insulator, and a sheath provided over a periphery of the plating layer. A crack suppressing layer is provided between the insulator and the plating layer, in such a manner as to remain in contact with the insulator while being provided with the plating layer over an outer surface of the crack suppressing layer. The crack suppressing layer suppresses the occurrence of a cracking in the plating layer by bending while moving in a longitudinal direction of the cable relative to a bending of the insulator.

Abstract: A high frequency signal transmission cable includes a conductor, an insulator provided over a periphery of the conductor, a plating layer provided over a periphery of the insulator, and a sheath provided over a periphery of the plating layer. A crack suppressing layer is provided between the insulator and the plating layer, in such a manner as to remain in contact with the insulator while being provided with the plating layer over an outer surface of the crack suppressing layer. The crack suppressing layer suppresses the occurrence of a cracking in the plating layer by bending while moving in a longitudinal direction of the cable relative to a bending of the insulator.