Abstract: A current sensor capable of efficiently cooling a busbar by using a cooling device includes a busbar, a shield disposed to face the busbar, a magnetic sensor disposed between the shield and the busbar, and an enclosure that integrally encases part of the busbar, the shield, and the magnetic sensor. When a side on which the busbar is disposed in the X-axis direction in which the busbar, the magnetic sensor, and the shield are arranged is defined as an X1 side, the busbar is disposed on the X1 side from the center line of the enclosure, and at least the X1 side of the enclosure is disposed to face the cooling device.

Abstract: A housing of an example of an electronic apparatus has a top surface and a bottom surface and has a flat shape. A power supply section having a flat shape is a power supply section, which is a housing case capable of accommodating a battery or is a battery, and the power supply section is provided at a position inside the housing that intersects with a reference plane perpendicular to the up-down direction. A first substrate is provided parallel to the reference plane on the top surface side relative to the power supply section. A second substrate is provided parallel to the reference plane on the bottom surface side relative to the power supply section. The electronic apparatus includes at least one of a vibrator and a speaker at a position that intersects with the reference plane.

Abstract: It is intended to provide a kit or a device for the detection of breast cancer and a method for detecting breast cancer. The present invention provides a kit or a device for the detection of breast cancer, comprising nucleic acid(s) capable of specifically binding to a miRNA in a sample of a subject, and a method for detecting breast cancer, comprising measuring the miRNA in vitro.

Abstract: A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.

Abstract: A recording medium and server provide a game that improves the interest in and taste of a battle event and increases the interest in and real enjoyment of the entire game. The recording medium provides a game including a predetermined battle event comprising at least one battle. In a battle event of this game, game contents are displayed in a first field, and a player selects therefrom a game content to be used for a battle with an enemy character. The first field is replenished with another game content alternative to the selected game content as needed so that the player can further select an additional game content therefrom.

Abstract: Provided is a semiconductor device including: a semiconductor substrate including a bulk donor; and a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, in which a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a concentration of the bulk donor of the semiconductor substrate or lower. The doping concentration at the shallowest concentration peak may be lower than a reference carrier concentration obtained when current that is 1/10 of rated current flows between an upper surface and the lower surface of the semiconductor substrate.

Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Abstract: A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.

Abstract: A MRI apparatus according to an embodiment includes processing circuitry. The processing circuitry obtains MR data acquired by implementing an IR method under a condition where a phase difference in a complex signal related to observed elements is equal to ?, due to a difference in longitudinal magnetization relaxation time between the observed elements; generates phase data on the basis of the MR data; multiplies a phase angle in the phase data by 2n; unfolds the phase of phase data having the phase angle multiplied by 2n; multiplies the phase angle in the unfolded phase data by 1/(2n); generates a phase correction map used for correcting a phase with respect to the complex signal, by applying a complex conjugate to phase data having the phase angle multiplied by 1/(2n); and performs a phase correction on the MR data by using the phase correction map.

Abstract: An object is to provide a battery module with higher energy density. A battery module includes a plurality of battery cells each including a layered body and an exterior body, in which a first periphery of each of any general battery cells arranged in a layered direction of the layered bodies includes a first bend that is coupled to a first bottom surface formed on a circumference of the exterior body and that bends toward one side in the layered direction, and a first extension extending from the first bend toward the one side in the layered direction, and the first extension includes a first region extending from the first bend to another end in the layered direction of the next battery cell, and a second region extending from the other end in the layered direction of the next battery cell toward the one side in the layered direction.

Abstract: To provide a secondary battery comprising an electrode laminate and an exterior packaging member, the electrode laminate being wrapped with the exterior packaging member, wherein the exterior packaging member comprises an exterior packaging area that wraps the electrode laminate, a heat-sealing area, and an intermediate area existing between the exterior packaging area and the heat-sealing area; in the exterior packaging area, a layer containing a first resin, a layer containing a second resin, a layer containing metal, and a layer containing a third resin are sequentially laminated from an electrode laminate side; in the heat-sealing area the layer containing metal and the layer containing the third resin are sequentially laminated on both sides of the layer containing the second resin; and in the intermediate area, a resin pool comprising the first resin is formed.

Abstract: There is provided with a battery module capable of improving cooling and heating efficiency of a battery. The battery module comprises: a plurality of secondary batteries; a cooling and heating unit configured to cool or heat the secondary batteries; and a heat transfer member disposed between the secondary batteries and the cooling and heating unit, a highly viscous fluid in contact with the secondary batteries and an intermediate member in contact with and holding the highly viscous fluid are arranged between the secondary batteries and the heat transfer member.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.

Abstract: Provided are a treatment apparatus and a treatment method treating a waste cleaning liquid discharged from a process of producing an electrode of a lithium-ion secondary battery, in which a liquid component and a solid component are efficiently separated from each other, and the liquid component can be sufficiently collected and subjected to volume reduction treatment. The treatment apparatus includes: a stirring tank stirring the waste cleaning liquid; a liquid feed line that takes out the waste cleaning liquid from the stirring tank; and a thin film evaporator evaporating a cleaning liquid in the waste cleaning liquid to separate the solid component. Then, in the treatment method, the waste cleaning liquid is stirred in the stirring tank, the waste cleaning liquid is supplied to the thin film evaporator in a state in which the solid component is diffused, and the cleaning liquid in the waste cleaning liquid is evaporated.

Abstract: A semiconductor device comprising a semiconductor substrate having upper and lower surfaces and a hydrogen containing region containing hydrogen and helium is provided. The carrier concentration distribution of the hydrogen containing region has: a first local maximum point; a second local maximum point closest to the first local maximum point among local maximum points positioned between the first local maximum point and the upper surface; a first intermediate point of the local minimum between the first and second local maximum points; and a second intermediate point closest to the second local maximum point among local minimum points or flat points where the carrier concentration remains constant positioned between the second local maximum point and the upper surface. A highest point of a helium concentration peak is positioned between the first and second local maximum points. The carrier concentration is lower at the first intermediate point than the second intermediate point.

Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Abstract: A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.

Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.