Abstract: A media-agitation pulverizer is capable of creating a uniformized, stable helicoidal flow in a mixture of pulverizing media and a raw material slurry, thereby performing pulverization/dispersion uniformly with satisfactory energy efficiency. The media-agitation pulverizer includes a guide ring installed to radially divide a lower region of a pulverization chamber into an inner section and an annular outer section, whereby a flow of a mixture of a raw material slurry and pulverizing media is formed as a helicoidal flow including a secondary flow flowing through a circulation flow path with respect to the guide ring; and rotational-flow suppressing device is provided within the pulverization chamber and adapted to strengthen the secondary flow of the helicoidal flow, thereby stabilizing the helicoidal flow.

Abstract: A super junction MOSFET is disclosed. The super junction MOSFET includes a plurality of mutually parallel pn junctions extending in a vertical direction on a first principal surface of an n-type semiconductor substrate; a parallel pn layer in which n-type drift regions and p-type partition regions, each sandwiched between the adjacent pn junctions, are disposed alternately in contact with each other; and an MOS gate structure on the first principal surface side of the parallel pn layer, wherein an n-type first buffer layer and second buffer layer are in contact in that order on the opposite principal surface side, and the impurity concentration of the first buffer layer is a concentration that is equal to or less than the same level as that of the impurity concentration of the n-type drift region.

Abstract: By a method that includes coking a residue resulting from distillation of crude oil under reduced pressure and having API gravity of 1 to 5, an asphaltene content of 10 to 50%, a resin content of 5 to 30%, and a sulfur content of 1 to 12% to obtain coke, pulverizing the coke to obtain a carbon powder, and heating the carbon powder at 1000 to 3500 deg C., a graphite anode active material for use in a lithium secondary battery is obtained that has, in X-ray powder diffraction, d002 of not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of smaller than 100 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2?) of 44 degrees to 45 degrees of not smaller than 0.65 degree.

Abstract: A super-junction semiconductor device includes a drift layer including an alternating-conductivity-type layer that includes n-type region and p-type region arranged alternately in parallel to the first major surface of an n-type substrate. These alternating regions extend deep in a direction perpendicular to the first major surface. The first major surface includes a main device region with a gate electrode and a main source electrode and sensing device region with a gate electrode and a sensing source electrode. There is a common drain electrode on the second major surface of the substrate. There is a separation region between the main device region and the sensing device region. It includes an n-type region and p-type regions in the n-type region. The p-type regions are in an electrically floating state in the directions parallel and perpendicular to the first alternating-conductivity-type layer.

Abstract: Semiconductor regions are alternately arranged in a parallel pn layer in which an n-type region and a p-type region are alternately arranged parallel to the main surface of a semiconductor substrate. Pitch between n drift region and p partition region of a second parallel pn layer in an edge termination region is two thirds of pitch between n drift region and p partition region of a first parallel pn layer in an active region. At boundaries between main SJ cells and fine SJ cells at four corners of the semiconductor substrate having rectangular shape in plan view, ends of two pitches of main SJ cells face the ends of three pitches of fine SJ cells. In this way, it is possible to reduce the influence of a process variation and thus reduce mutual diffusion between n drift region and p partition region of the fine SJ cell.

Abstract: A media-agitation type pulverizer of the present invention includes: a guide ring installed to radially divide a lower region of a pulverization chamber into an inner section and an annular outer section. A flow of a mixture of a raw material slurry and pulverizing media is formed as a helicoidal flow comprising a secondary flow flowing through a circulation flow path which has an upward flow path and a downward flow path created, respectively, in the outer section and the inner section of the lower region of the pulverization chamber, with respect to the guide ring. A rotational-flow suppressing device is provided within the pulverization chamber and adapted to strengthen the secondary flow of the helicoidal flow, thereby stabilizing the helicoidal flow.

Abstract: Semiconductor regions are alternately arranged in a parallel pn layer in which an n-type region and a p-type region are alternately arranged parallel to the main surface of a semiconductor substrate. Pitch between n drift region and p partition region of a second parallel pn layer in an edge termination region is two thirds of pitch between n drift region and p partition region of a first parallel pn layer in an active region. At boundaries between main SJ cells and fine SJ cells at four corners of the semiconductor substrate having rectangular shape in plan view, ends of two pitches of main SJ cells face the ends of three pitches of fine SJ cells. In this way, it is possible to reduce the influence of a process variation and thus reduce mutual diffusion between n drift region and p partition region of the fine SJ cell.

Abstract: An anode active material for use in a lithium secondary battery including a mixture of graphite I that has, according to X-ray powder diffraction, d002 of not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of smaller than 100 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2?) of 44 degrees to 45 degrees of not smaller than 0.65 degree and another graphite so as to have, according to X-ray powder diffraction, d002 of not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of not smaller than 80 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2?) of 44 degrees to 45 degrees of not smaller than 0.5 degree.

Abstract: By a method that includes coking a residue resulting from distillation of crude oil under reduced pressure and having API gravity of 1 to 5, an asphaltene content of 10 to 50%, a resin content of 5 to 30%, and a sulfur content of 1 to 12% to obtain coke, pulverizing the coke to obtain a carbon powder, and heating the carbon powder at 1000 to 3500 deg C., a graphite anode active material for use in a lithium secondary battery is obtained that has, in X-ray powder diffraction, d002 of not smaller than 0.3354 nm and not greater than 0.337 nm, Lc(004) of smaller than 100 nm, La(110) of not smaller than 100 nm, and a half width of the peak of a plane (101) at a diffraction angle (2?) of 44 degrees to 45 degrees of not smaller than 0.65 degree.

Abstract: A super-junction semiconductor device includes a drift layer including an alternating-conductivity-type layer that includes n-type region and p-type region arranged alternately in parallel to the first major surface of an n-type substrate. These alternating regions extend deep in a direction perpendicular to the first major surface. The first major surface includes a main device region with a gate electrode and a main source electrode and sensing device region with a gate electrode and a sensing source electrode. There is a common drain electrode on the second major surface of the substrate. There is a separation region between the main device region and the sensing device region. It includes an n-type region and p-type regions in the n-type region. The p-type regions are in an electrically floating state in the directions parallel and perpendicular to the first alternating-conductivity-type layer.

Abstract: A low-pressure casting apparatus that prevents molten metal that is a residue in a conduit from being oxidized. The low-pressure casting apparatus includes a compartment for holding a molten metal 1, a pressure chamber 2 that can communicate with the compartment, wherein the molten meal is pressurized in the chamber, an on-off valve 5 that opens and closes hole 4 through which the compartment can communicate with the pressure chamber, a conduit 7 that conducts the molten metal to the mold 6, wherein the base of the conduit is connected to a lower part of the chamber so as to communicate with the chamber, the end of the conduit being made so that it can communicate with a sprue for a mold 6, a float 9 that goes up and down in the pressure chamber, and a tank that stores an inert gas and that has a pipe 13 that is connected to the upper part of the pressure chamber 2.

Abstract: A playback device of present invention includes a power switching portion that, when the necessity of switching of the reproducing condition is detected, switches the reproducing power to a minimum power which does not damage the data recorded on the multi-layer recording medium and with which the address of the reproducing target data can be read out, and when it is confirmed after the switching of the reproducing condition that the address read out with the minimum power matches the address of the reproducing target data, switches the reproducing power to the optimum power that corresponds to the reproducing condition after the switching, based on the power setting information.

Abstract: The present invention is aimed to provide a low-pressure casting apparatus which can prevent the molten metal that is a residue in a conduit from being oxidized. A conduit in the apparatus is connected to a lower part of a pressure chamber in which the molten metal is pressurized. Also, the end of the conduit is made so that it can communicate with a sprue for a mold.

Abstract: A device for moving a metal cope towards and apart from a stationary metal drag, used in a metal mold casting device that uses the metal cope and drag, comprising: an upper die plate (9) for carrying the metal cope; a frame (5; 25); a metal mold opening and closing device (6) mounted on the frame for carrying and vertically moving the upper die plate relative to the frame so as to move the metal cope attached to the upper die plate between a position that is above and relatively near the metal drag and a position that is at the metal drag; and an actuator (3; 23, 23) connected to the frame for moving the frame so as to move the metal cope attached to the upper die plate between the position that is above and relatively near the metal drag and a position that is relatively far from the metal drag.

Abstract: A device for moving a metal cope towards and apart from a stationary metal drag, used in a metal mold casting device that uses the metal cope and drag, comprising: an upper die plate (9) for carrying the metal cope; a frame (5; 25); a metal mold opening and closing device (6) mounted on the frame for carrying and vertically moving the upper die plate relative to the frame so as to move the metal cope attached to the upper die plate between a position that is above and relatively near the metal drag and a position that is at the metal drag; and an actuator (3; 23, 23) connected to the frame for moving the frame so as to move the metal cope attached to the upper die plate between the position that is above and relatively near the metal drag and a position that is relatively far from the metal drag.

Abstract: In a vacuum processing system used in a semiconductor device manufacturing process, a plate-shaped placement area protector made of a dielectric material having a surface of dimensions and shape matching those of a surface of a substrate or an area for substrate placement in a surface of a substrate stage in place of the substrate. An etching gas is introduced into a vacuum vessel by a gas introduction mechanism and predetermined high-frequency electromagnetic wave power is applied to the substrate stage from a stage high-frequency electromagnetic wave power source. Plasma is formed in the proximity of the surface of the substrate stage by the applied high-frequency electromagnetic wave power, and a deposited film on the surface of the substrate stage is removed with the plasma. The placement area protector has the same electrical properties as the deposited film.

Abstract: A support shaft is non-rotationally inserted into bearing plates of support member. Accelerator rotor is attached to support shaft and can rotate, and a driver rotates it by means of the actuation of the accelerator pedal. Sensor rotor of accelerator opening sensor is attached to support shaft and can rotate. Protruding portion of sensor rotor is engaged with recess portion formed in accelerator rotor. Because plate spring inserted into recess portion sandwiches protruding portion in a direction opposite of the direction of rotation, with respect to sensor rotor, shift or deviation in the direction of rotation of accelerator rotor is prevented. Further, with respect to sensor rotor, accelerator rotor can slide in contact with plate spring while sliding in the direction of support shaft and the radial direction of accelerator rotor.

Abstract: In an accelerator, an acceleration rotor made of resin is rotatably supported in a support shaft, one end portion of a pedal arm is connected to an acceleration pedal, and the other end portion of the pedal arm is attached to attachment portions of the acceleration rotor. The attachment portions are provided in the acceleration rotor to be separated in a rotation direction of the acceleration rotor. For example, the attachment portions are a press-fitting portion, into which a top end part of the other end portion of the pedal arm is press-fitted, and an insertion portion, into which a bending part of the other end portion of the pedal arm is inserted. Thus, the pedal arm can be accurately readily attached to the resinous acceleration rotor to be only rotated around the support shaft of the acceleration rotor.

Abstract: In a vacuum processing system used in a semiconductor device manufacturing process, a plate-shaped placement area protector made of a dielectric material having a surface of dimensions and shape matching those of a surface of a substrate or an area for substrate placement in a surface of a substrate stage in place of the substrate. An etching gas is introduced into a vacuum vessel by a gas introduction mechanism and predetermined high-frequency electromagnetic wave power is applied to the substrate stage from a stage high-frequency electromagnetic wave power source. Plasma is formed in the proximity of the surface of the substrate stage by the applied high-frequency electromagnetic wave power, and a deposited film on the surface of the substrate stage is removed with the plasma. The placement area protector has the same electrical properties as the deposited film.

Abstract: In a vacuum processing system used in a semiconductor device manufacturing process, a plate-shaped placement area protector made of a dielectric material having a surface of dimensions and shape matching those of a surface of a substrate or an area for substrate placement in a surface of a substrate stage in place of the substrate. An etching gas is introduced into a vacuum vessel by a gas introduction mechanism and predetermined high-frequency electromagnetic wave power is applied to the substrate stage from a stage high-frequency electromagnetic wave power source. Plasma is formed in the proximity of the surface of the substrate stage by the applied high-frequency electromagnetic wave power, and a deposited film on the surface of the substrate stage is removed with the plasma. The placement area protector has the same electrical properties as the deposited film.