Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Abstract: A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.

Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Abstract: Provided is a semiconductor device including a semiconductor substrate doped with impurities, a front surface-side electrode provided on a front surface side of the semiconductor substrate, a back surface-side electrode provided on a back surface side of the semiconductor substrate, wherein the semiconductor substrate has a peak region arranged on the back surface side of the semiconductor substrate and having one or more peaks of impurity concentration, a high concentration region arranged closer to the front surface than the peak region and having a gentler impurity concentration than the one or more peaks, and a low concentration region arranged closer to the front surface than the high concentration region and having a lower impurity concentration than the high concentration region.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.

Abstract: A secondary battery according to one aspect of the present disclosure includes a negative electrode which includes a negative electrode core and a negative electrode active material layer provided on at least one surface of the negative electrode core. In this secondary battery, the negative electrode active material layer includes a negative electrode active material which contains graphite having a crystalline size of 10 nm or more and an interlayer distance d002 of 0.3356 to 0.3360 nm and a rubber-based binding material having an average primary particle diameter of 120 to 250 nm, the negative electrode active material has a pore capacity of 0.5 ml/g or less at a pore diameter of 0.2 to 1 ?m measured by a mercury porosimeter, and the rate of the average primary particle diameter of the rubber-based binding material to the pore capacity of the negative electrode active material is 1.15 to 1.70 g/m2.

Abstract: Provided is a semiconductor device including: a semiconductor substrate including a bulk donor; and a first buffer region of a first conductivity type, the first buffer region being provided on a lower surface side of the semiconductor substrate and having one or more doping concentration peaks and one or more hydrogen concentration peaks in a depth direction of the semiconductor substrate, in which a doping concentration at a shallowest concentration peak, out of the doping concentration peaks of the first buffer region, closest to the lower surface of the semiconductor substrate is 50 times as high as a concentration of the bulk donor of the semiconductor substrate or lower. The doping concentration at the shallowest concentration peak may be lower than a reference carrier concentration obtained when current that is 1/10 of rated current flows between an upper surface and the lower surface of the semiconductor substrate.

Abstract: A fuel cell system includes a fuel cell, a fuel gas supply line, an oxidizing agent gas supply line, a fuel gas discharge line, and a reformer provided in the fuel gas supply line. A first circulating line circulates the fuel gas from the fuel gas discharge line to an upstream side of the reformer in the fuel gas supply line as a first circulating gas. The circulation device is provided in the fuel gas supply line, and suctions the first circulating gas by using the flow of the fuel gas flowing through the fuel gas supply line as a driving flow. A second circulating line circulates the fuel gas from a downstream side of the circulation device in the fuel gas supply line or the fuel gas discharge line to the upstream side of the circulation device in the fuel gas supply line as a second circulating gas.

Abstract: Provided is a semiconductor device including a semiconductor substrate having a drift region; a transistor portion having a collector region; a diode portion having a cathode region; and a boundary portion arranged between the transistor portion and the diode portion at an upper surface of the semiconductor substrate, and having the collector region, wherein the mesa portion of each of the transistor portion and the boundary portion has an emitter region and a base region, the base region has a channel portion, and a density in the upper surface of the mesa portion in the region in which the channel portion is projected onto the upper surface of the mesa portion of the boundary portion may be smaller than the density of the region in which the channel portion is projected onto the upper surface of the mesa portion of the transistor portion.

Abstract: A semiconductor device is provided. The semiconductor device includes: a first region formed on a front surface side of a semiconductor substrate; a drift region formed closer to a rear surface of the semiconductor substrate than the first region is; a buffer region that: is formed closer to the rear surface of the semiconductor substrate than the drift region is; and has one or more peaks of an impurity concentration that are higher than an impurity concentration of the drift region; and a lifetime killer that: is arranged on a rear surface side of the semiconductor substrate; and shortens a carrier lifetime, wherein a peak of a concentration of the lifetime killer is arranged between: a peak that is closest to a front surface of the semiconductor substrate among the peaks of the impurity concentration in the buffer region; and the rear surface of the semiconductor substrate.

Abstract: A semiconductor device is provided, including a semiconductor substrate, wherein the semiconductor substrate has: a diode region; a transistor region; and a boundary region that is positioned between the diode region and the transistor region, the boundary region includes a defect region that is provided: at a predetermined depth position on a front surface-side of the semiconductor substrate; and to extend from an end portion of the boundary region adjacent to the diode region toward the transistor region, at least part of the boundary region does not include a first conductivity-type emitter region exposed on a front surface of the semiconductor substrate, and the transistor region does not have the defect region below a mesa portion that is sandwiched by two adjacent trench portions, and closest to the boundary region among the mesa portions having the emitter region.

Abstract: Provided is a semiconductor apparatus in which the buried region includes an end portion buried region continuously disposed from a region below the contact opening up to a region below the interlayer dielectric film while passing below an end portion of the contact opening in a cross section perpendicular to the upper surface of the semiconductor substrate, and the end portion buried region disposed below the interlayer dielectric film is shorter than the end portion buried region disposed below the contact opening in a first direction in parallel with the upper surface of the semiconductor substrate.

Abstract: A medical control apparatus includes a circuitry configured to: generate an irradiation image represented by illuminating-light irradiation, based on a brightness distribution of a captured image captured by an imaging device; and control generation of a projection image and projection of the projection image onto a subject by an image projector provided in an optical member based on the irradiation image and a rotation angle for rotation of the optical member rotatably coupled to the imaging device about a longitudinal axis of the optical member relative to the imaging device.

Abstract: A p-type semiconductor region is formed in a front surface side of an n-type semiconductor substrate. An n-type field stop (FS) region including protons as a donor is formed in a rear surface side of the semiconductor substrate. A concentration distribution of the donors in the FS region include first, second, third and fourth peaks in order from a front surface to the rear surface. Each of the peaks has a peak maximum point, and peak end points formed at both sides of the peak maximum point. The peak maximum points of the first and second peaks are higher than the peak maximum point of the third peak. The peak maximum point of the third peak is lower than the peak maximum point of the fourth peak.

Abstract: A distillation apparatus is capable of regenerating spent NMP from an on-site process for lithium ion battery electrodes. The distillation apparatus has a raw material tank, a side-cut distillation column, and a product tank. The distillation column has a top portion where a liquid to be treated is separated into a high-concentration NMP and water containing light-boiling components, a bottom portion where refluxed liquid in the distillation column is further distilled to separate the refluxed liquid into a high-purity NMP and the high-concentration NMP containing high-boiling components, and a mid-stage portion from which the high-purity NMP is withdrawn as side-cut vapor. The distillation column has, at a rear stage, a condenser for condensing the high-purity NMP withdrawn as the side-cut vapor, and a flow controller for regulating an amount of a liquid of the high-purity NMP withdrawn from the condenser to the product tank.

Abstract: Provided is a semiconductor device including: a semiconductor substrate doped with an impurity; a front-surface-side electrode provided at a side of a front surface of the semiconductor substrate; and a back-surface-side electrode provided at a side of a back surface of the semiconductor substrate; wherein the semiconductor substrate includes: a peak region arranged at the side of the back surface of the semiconductor substrate and having one or more peaks of an impurity concentration; a high concentration region arranged closer to the front surface than the peak region and having an impurity concentration more gently sloped than the one or more peaks; and a low concentration region arranged closer to the front surface than the high concentration region and having an impurity concentration lower than the impurity concentration of the high concentration region and a substrate concentration of the semiconductor substrate.

Abstract: A magnetic resonance imaging apparatus according to the present embodiment includes sequence control circuitry. The sequence control circuitry collect first MR data in a first cardiac cycle by excitation of a first region including a first slice, and collects reference data used for phase correction of second MR data on a second slice not included in the first region before and after the collection of the first MR data in the first cardiac cycle.

Abstract: There is provided a semiconductor device including: an anode electrode that is provided on a front surface side of a semiconductor substrate; a drift region of a first conductivity type that is provided in the semiconductor substrate; a first anode region of a first conductivity type that is in Schottky contact with the anode electrode; and a second anode region of a second conductivity type that is different from the first conductivity type, in which the first anode region has a doping concentration lower than or equal to a doping concentration of the second anode region, and is spaced from the drift region by the second anode region.

Abstract: A semiconductor device comprising a semiconductor substrate is provided, wherein the semiconductor substrate has a hydrogen containing region that contains hydrogen, the hydrogen containing region contains helium in at least some region, a hydrogen chemical concentration distribution of the hydrogen containing region in a depth direction has one or more hydrogen concentration trough portions, and in each of the hydrogen concentration trough portions the hydrogen chemical concentration is equal to or higher than 1/10 of an oxygen chemical concentration. In at least one of the hydrogen concentration trough portions, the hydrogen chemical concentration may be equal to or higher than a helium chemical concentration.